ページ 4 - Diodes Incorporated 製品 - トランジスタ - バイポーラ（BJT） - シングル | Heisener Electronics
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Diodes Incorporated 製品 - トランジスタ - バイポーラ（BJT） - シングル

レコード 1,679
ページ  4/56
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在庫
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FZT953QTA
Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT223 T&

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 420mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 1.6 W
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
パッケージ: -
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5 A
100 V
420mV @ 400mA, 4A
50nA
100 @ 1A, 1V
1.6 W
125MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
MMBT2222AQ-7-F
Diodes Incorporated

SS MID-PERF TRANSISTOR SOT23 T&R

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 310 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: -
在庫9,000
600 mA
40 V
1V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
310 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC856BWQ-7
Diodes Incorporated

General Purpose Transistor SOT32

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: -
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100 mA
65 V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
200 mW
200MHz
-65°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
DXTP3C60PS-13
Diodes Incorporated

TRANS PNP 60V 3A POWERDI5060-8

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
  • Power - Max: 5 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
パッケージ: -
在庫26,532
3 A
60 V
360mV @ 300mA, 3A
100nA
150 @ 500mA, 2V
5 W
-
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
FZT957QTC
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 1A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
  • Power - Max: 1.6 W
  • Frequency - Transition: 85MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
パッケージ: -
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1 A
300 V
240mV @ 300mA, 1A
50nA
100 @ 500mA, 10V
1.6 W
85MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
ZTX452STZ
Diodes Incorporated

IC TRANSISTOR ARRAY SMD

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
FZT653QTA
Diodes Incorporated

PWR MID PERF TRANSISTOR SOT223 T

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1.2 W
  • Frequency - Transition: 175MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
パッケージ: -
在庫5,970
2 A
100 V
500mV @ 200mA, 2A
100nA (ICBO)
100 @ 500mA, 2V
1.2 W
175MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
MJD2873-13
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 1.45 W
  • Frequency - Transition: 65MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
パッケージ: -
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2 A
50 V
300mV @ 50mA, 1A
100nA
120 @ 500mA, 2V
1.45 W
65MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
BST15TA
Diodes Incorporated

TRANS PNP -200V 500MA SOT-89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 15MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: -
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500 mA
200 V
2V @ 5mA, 50mA
50µA
30 @ 50mA, 10V
1 W
15MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
DXTN22040CFGQ-7
Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1.1 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
パッケージ: -
在庫5,940
2 A
40 V
600mV @ 300mA, 3A
50nA
200 @ 500mA, 2V
1.1 W
200MHz
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PowerDI3333-8 (SWP) Type UX
FZT956QTA
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 1.6 W
  • Frequency - Transition: 110MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
パッケージ: -
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2 A
200 V
275mV @ 400mA, 2A
50nA
100 @ 1A, 5V
1.6 W
110MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
ZTX450STZ
Diodes Incorporated

TRANS NPN 45V 1000MA E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
パッケージ: -
在庫2,295
1 A
45 V
250mV @ 15mA, 150mA
-
100 @ 150mA, 10V
1 W
150MHz
-
Through Hole
E-Line-3
E-Line (TO-92 compatible)
APT13003DU-E1
Diodes Incorporated

TRANS NPN DARL 450V 1.5A TO126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
  • Power - Max: 1.1 W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
パッケージ: -
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1.5 A
450 V
400mV @ 250mA, 1A
10µA
16 @ 500mA, 2V
1.1 W
4MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
BSR43QTA
Diodes Incorporated

PWR MID PERF TRANSISTOR SOT89 T&

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 5V
1 W
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
ZX5T851GQTC
Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT223 T&

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 1.2 W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
パッケージ: -
在庫11,853
6 A
60 V
260mV @ 300mA, 6A
20nA
100 @ 2A, 1V
1.2 W
130MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
FCX591QTA
Diodes Incorporated

PWR MID PERF TRANSISTOR SOT89 T&

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
  • Power - Max: 1 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: -
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1 A
60 V
600mV @ 100mA, 1A
100nA
100 @ 500mA, 5V
1 W
150MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
DXTN07100BFG-7
Diodes Incorporated

TRANS NPN 100V 2A POWERDI3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 900 mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
パッケージ: -
在庫8,811
2 A
100 V
400mV @ 200mA, 2A
50nA (ICBO)
100 @ 500mA, 2V
900 mW
175MHz
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PowerDI3333-8 (SWP) Type UX
DSS3540MQ-7B
Diodes Incorporated

SS Low Sat Transistor X1-DFN1006

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
  • Power - Max: 400 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UFDFN
  • Supplier Device Package: X1-DFN1006-3
パッケージ: -
在庫30,000
500 mA
40 V
350mV @ 50mA, 500mA
100nA
200 @ 10mA, 2V
400 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-UFDFN
X1-DFN1006-3
BST40TA
Diodes Incorporated

TRANSISTOR NPN 250V 0.5A SC-62

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 70MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: -
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500 mA
250 V
500mV @ 4mA, 50mA
-
40 @ 20mA, 10V
1 W
70MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
DXT2011P5Q-13
Diodes Incorporated

TRANS NPN 100V 6A POWERDI5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 3.2 W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 5
  • Supplier Device Package: PowerDI™ 5
パッケージ: -
在庫41,319
6 A
100 V
220mV @ 500mA, 5A
20nA (ICBO)
100 @ 2A, 2V
3.2 W
130MHz
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI™ 5
PowerDI™ 5
FMMTA92QTA
Diodes Incorporated

SS HI VOLTAGE TRANSISTOR SOT23 T

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Power - Max: 310 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: -
在庫6,000
200 mA
300 V
500mV @ 2mA, 20mA
250nA (ICBO)
40 @ 10mA, 10V
310 mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FMMT411QTD
Diodes Incorporated

Avalanche Transistor SOT23 T&R 0

  • Transistor Type: NPN - Avalanche Mode
  • Current - Collector (Ic) (Max): 900 mA
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (Type DN)
パッケージ: -
在庫1,485
900 mA
15 V
100mV @ 1mA, 10mA
100nA (ICBO)
100 @ 10mA, 10V
800 mW
40MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (Type DN)
FMMT411QTA
Diodes Incorporated

Avalanche Transistor SOT23 T&R 3

  • Transistor Type: NPN - Avalanche Mode
  • Current - Collector (Ic) (Max): 900 mA
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (Type DN)
パッケージ: -
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900 mA
15 V
100mV @ 1mA, 10mA
100nA (ICBO)
100 @ 10mA, 10V
800 mW
40MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (Type DN)
MMBT3904T-7-F-79
Diodes Incorporated

IC TRANSISTOR ARRAY SMD

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BST51TA
Diodes Incorporated

TRANS DARL NPN 60V 500MA SOT-89

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: -
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500 mA
60 V
1.3V @ 500µA, 500mA
10µA
1000 @ 150mA, 10V
1 W
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
BCP53QTA
Diodes Incorporated

PWR MID PERF TRANSISTOR SOT223 T

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
パッケージ: -
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1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
2 W
150MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
DXTN03060CFG-7
Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
  • Power - Max: 1.2 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
パッケージ: -
在庫5,940
6 A
60 V
260mV @ 300mA, 6A
50nA
200 @ 2A, 2V
1.2 W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PowerDI3333-8 (SWP) Type UX
DXTP03200BP5Q-13
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR PDI5 T

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 740 mW
  • Frequency - Transition: 105MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 5
  • Supplier Device Package: PowerDI™ 5
パッケージ: -
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2 A
200 V
275mV @ 400mA, 2A
50nA (ICBO)
100 @ 1A, 5V
740 mW
105MHz
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI™ 5
PowerDI™ 5
DCX54-16-13
Diodes Incorporated

TRANS NPN 45V 1A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: -
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1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1 W
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
ZXTN2010ZQTA
Diodes Incorporated

TRANS NPN 60V 5A SOT89-3 T&R

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 230mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 2.1 W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: -
在庫6,171
5 A
60 V
230mV @ 300mA, 6A
50nA (ICBO)
100 @ 2A, 1V
2.1 W
130MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3