画像 |
部品番号 |
メーカ |
説明 |
パッケージ |
在庫 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
|
パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫4,448 |
|
MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 2.3V @ 50µA | 2.5nC @ 10V | 78pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Microsemi Corporation |
MOSFET N-CH TO-254AA
|
パッケージ: TO-254-3, TO-254AA (Straight Leads) |
在庫6,176 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 500 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
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ON Semiconductor |
MOSFET N-CH 40V 53.6A 8DFN
|
パッケージ: 8-PowerWDFN |
在庫3,248 |
|
MOSFET (Metal Oxide) | 40V | 17A (Ta), 53A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 31nC @ 10V | 1570pF @ 25V | ±20V | - | 2.7W (Ta), 33W (Tc) | 6.4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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NXP |
MOSFET N-CH 60V 300MA SOT-23
|
パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫5,472 |
|
MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | 2.5V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A I-PAK
|
パッケージ: TO-251-3 Short Leads, IPak, TO-251AA |
在庫6,516 |
|
MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | ±20V | - | 25W (Tc) | 540 mOhm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH TO220-3
|
パッケージ: TO-220-3 |
在庫4,784 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.5V @ 180µA | 140nC @ 10V | 10120pF @ 25V | ±20V | - | 250W (Tc) | 3.9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO263-3
|
パッケージ: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
在庫5,968 |
|
MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 4V @ 390µA | 34nC @ 10V | 1500pF @ 400V | ±20V | - | 92W (Tc) | 120 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
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IXYS |
500V POLAR2 HIPERFETS
|
パッケージ: TO-3P-3, SC-65-3 |
在庫5,040 |
|
MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 4.5V @ 1mA | 48nC @ 10V | 2890pF @ 25V | ±30V | - | 480W (Tc) | 270 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Diodes Incorporated |
MOSFET P-CH 450V 0.075A SOT223
|
パッケージ: TO-261-4, TO-261AA |
在庫93,888 |
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MOSFET (Metal Oxide) | 450V | 75mA (Ta) | 10V | 4.5V @ 1mA | - | 120pF @ 25V | ±20V | - | 2W (Ta) | 150 Ohm @ 50mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A IPAK
|
パッケージ: TO-251-3 Short Leads, IPak, TO-251AA |
在庫7,920 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | ±20V | - | 94W (Tc) | 3.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Microsemi Corporation |
MOSFET N-CH 1200V 24A TO-264
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パッケージ: TO-264-3, TO-264AA |
在庫5,392 |
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MOSFET (Metal Oxide) | 1200V | 24A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8370pF @ 25V | ±30V | - | 1040W (Tc) | 680 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3
|
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫24,414 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 85µA | 68nC @ 10V | 2530pF @ 25V | ±20V | - | 136W (Tc) | 6.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 40V 6.2A 8-SOIC
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫1,463,952 |
|
MOSFET (Metal Oxide) | 40V | 6.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 80nC @ 10V | 3220pF @ 25V | ±20V | - | 2.5W (Ta) | 41 mOhm @ 6.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 650V 76A TO247-3
|
パッケージ: TO-247-3 |
在庫9,336 |
|
MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 4V @ 1.48mA | 121nC @ 10V | 5243pF @ 400V | ±20V | - | 255W (Tc) | 37 mOhm @ 29.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Diodes Incorporated |
MOSFET N-CHA 60V 10.6A POWERDI
|
パッケージ: 8-PowerTDFN |
在庫6,368 |
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MOSFET (Metal Oxide) | 60V | 9.8A (Ta), 37A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 864pF @ 30V | ±20V | - | 2.6W (Ta), 37.5W (Tc) | 16 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Nexperia USA Inc. |
MOSFET N-CH 80V 100A D2PAK
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫32,286 |
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MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 4V @ 1mA | 71nC @ 10V | 4461pF @ 40V | ±20V | - | 210W (Tc) | 6.9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫19,512 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | ±20V | - | 230W (Tc) | 4.2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 100V 170A SOT227
|
パッケージ: SOT-227-4, miniBLOC |
在庫6,180 |
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MOSFET (Metal Oxide) | 100V | 170A | 10V | 4V @ 1mA | 240nC @ 10V | 12600pF @ 25V | ±20V | - | 890W (Tc) | 12 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 44A TO-220F
|
パッケージ: TO-220-3 Full Pack |
在庫486,540 |
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MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 5V @ 250µA | 61nC @ 10V | 2870pF @ 25V | ±30V | - | 38W (Tc) | 69 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 100V 18A LFPAK33
|
パッケージ: SOT-1210, 8-LFPAK33 (5-Lead) |
在庫694,974 |
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MOSFET (Metal Oxide) | 100V | 18A (Tj) | 10V | 4V @ 1mA | 16.4nC @ 10V | 773pF @ 50V | ±20V | - | 65W (Tc) | 71 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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Infineon Technologies |
MOSFET N-CH 60V 18A/40A TSDSON
|
パッケージ: - |
在庫29,535 |
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MOSFET (Metal Oxide) | 60 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 36µA | 47 nC @ 10 V | 3100 pF @ 30 V | ±20V | - | 2.1W (Ta), 69W (Tc) | 3.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
SIC_DISCRETE
|
パッケージ: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 70A (Tc) | 18V, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | 1738 pF @ 800 V | +23V, -5V | - | 333W (Tc) | 38mOhm @ 27A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
onsemi |
MOSFET N-CH 30V TRENCH
|
パッケージ: - |
在庫4,500 |
|
- | - | 17A (Ta), 51A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 80V 200A HSOG-8
|
パッケージ: - |
在庫1,536 |
|
MOSFET (Metal Oxide) | 80 V | 200A (Tc) | 6V, 10V | 3.8V @ 130µA | 110 nC @ 10 V | 7670 pF @ 40 V | ±20V | - | 200W (Tc) | 2.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
||
onsemi |
MOSFET N-CH 100V 39A D2PAK
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 39A (Tc) | 4.5V, 10V | 3V @ 250µA | 63 nC @ 10 V | 1810 pF @ 25 V | ±16V | - | 183W (Tj) | 35mOhm @ 39A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
N-CHANNEL 60-V (D-S) MOSFET POWE
|
パッケージ: - |
在庫23,343 |
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MOSFET (Metal Oxide) | 60 V | 31.7A (Ta), 130A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 84 nC @ 10 V | 3700 pF @ 30 V | ±20V | - | 5W (Ta), 83W (Tc) | 2.75mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Goford Semiconductor |
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
|
パッケージ: - |
在庫10,683 |
|
MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | 1255 pF @ 15 V | ±20V | - | 48W (Tc) | 7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPAK |
||
Renesas Electronics Corporation |
POWER FIELD-EFFECT TRANSISTOR
|
パッケージ: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 1000V 3.1A TO220AB
|
パッケージ: - |
在庫4,149 |
|
MOSFET (Metal Oxide) | 1000 V | 3.1A (Tc) | 10V | 4V @ 250µA | 80 nC @ 10 V | 980 pF @ 25 V | ±20V | - | 125W (Tc) | 5Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
650 V 29 A GAN FET
|
パッケージ: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 650 V | 29A (Tc) | 10V | 4.8V @ 700µA | 9 nC @ 10 V | 638 pF @ 400 V | ±20V | - | 96W (Tc) | 85mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLT | 16-PowerSOP Module |