Cree/Wolfspeed 製品 | Heisener Electronics
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Cree/Wolfspeed 製品

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C2M0040120D
Cree/Wolfspeed

MOSFET N-CH 1200V 60A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫4,448
C2M1000170D
Cree/Wolfspeed

MOSFET N-CH 1700V 4.9A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 191pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫2,608
C3M0120100K
Cree/Wolfspeed

1000V, 120 MOHM, G3 SIC MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
パッケージ: TO-247-4
在庫11,004
C3M0075120K
Cree/Wolfspeed

MOSFET N-CH SICFET 1.2KV TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 30.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
パッケージ: TO-247-4
在庫22,176
C3M0065100K
Cree/Wolfspeed

1000V, 65 MOHM, G3 SIC MOSFET

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 113.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
パッケージ: TO-247-4
在庫19,500
C2M1000170J
Cree/Wolfspeed

MOSFET N-CH 1700V 5.3A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7 (Straight Leads)
パッケージ: TO-263-7 (Straight Leads)
在庫22,206
CRF24060FE
Cree/Wolfspeed

FET RF 120V 1.1GHZ 440193

  • Transistor Type: Silicon Carbide MESFET
  • Frequency: 1.1GHz
  • Gain: 13dB
  • Voltage - Test: 48V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 60W
  • Voltage - Rated: 120V
  • Package / Case: 440193
  • Supplier Device Package: 440193
パッケージ: 440193
在庫3,360
CGHV27015S
Cree/Wolfspeed

RF MOSFET HEMT 50V 12VFDFN

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60mA
  • Power - Output: 15W
  • Voltage - Rated: 125V
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x3)
パッケージ: 12-VFDFN Exposed Pad
在庫6,288
CGHV22100F
Cree/Wolfspeed

FET RF 125V 2.2GHZ 440162

  • Transistor Type: HEMT
  • Frequency: 1.8GHz ~ 2.2GHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 100W
  • Voltage - Rated: 125V
  • Package / Case: 440162
  • Supplier Device Package: 440162
パッケージ: 440162
在庫4,848
CGHV22200F
Cree/Wolfspeed

FET RF 125V 2.2GHZ 440162

  • Transistor Type: HEMT
  • Frequency: 1.8GHz ~ 2.2GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 200W
  • Voltage - Rated: 125V
  • Package / Case: 440162
  • Supplier Device Package: 440162
パッケージ: 440162
在庫4,480
CGH60030D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫7,088
CGHV40100F
Cree/Wolfspeed

FET RF 125V 3GHZ 440193

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 3GHz
  • Gain: 11dB
  • Voltage - Test: 50V
  • Current Rating: 8.7A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 116W
  • Voltage - Rated: 125V
  • Package / Case: 440193
  • Supplier Device Package: 440193
パッケージ: 440193
在庫14,844
CGHV40030F
Cree/Wolfspeed

FET RF 125V 6GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 16dB
  • Voltage - Test: 50V
  • Current Rating: 4.2A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 30W
  • Voltage - Rated: 125V
  • Package / Case: 440166
  • Supplier Device Package: 440166
パッケージ: 440166
在庫6,928
CGH55030F2
Cree/Wolfspeed

FET RF 84V 6GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 4.5GHz ~ 6GHz
  • Gain: 11dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
パッケージ: 440166
在庫6,204
CSD08060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 12.5A TO220

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 470pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-220-2
在庫5,232
hot CSD10060G
Cree/Wolfspeed

DIODE SCHOTTKY 600V 16.5A TO263

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 16.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫16,272
hot CSD06060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 340pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-220-2
在庫272,172
CSD02060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 3.5A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-220-2
在庫2,112
C3D08060G-TR
Cree/Wolfspeed

DIODE SCHOTTKY 600V 20A TO263-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 26pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫4,144
C3D06065E
Cree/Wolfspeed

DIODE SCHOTTKY 650V 2A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 295pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫8,220
C3D10065I
Cree/Wolfspeed

DIODE SCHOTTKY 650V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Isolated Tab
  • Supplier Device Package: TO-220-2 Isolated Tab
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-220-2 Isolated Tab
在庫17,352
C3D10065E
Cree/Wolfspeed

DIODE SCHOTTKY 650V 32A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 32A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫17,982
CSD20030D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 300V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 300V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫2,304
C4D10120D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 9A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 150µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫3,584
C3D20065D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 60µA @ 650V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫7,216
C2D20120D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 22A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫14,304
CRF24010-TB
Cree/Wolfspeed

EVAL BOARD FOR CRF24010

  • Type: MESFET
  • Frequency: 0Hz ~ 2.7GHz
  • For Use With/Related Products: CRF24010
  • Supplied Contents: Partially Populated Board - Main IC Not Included
パッケージ: -
在庫2,790
CGH55015F-TB
Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH55015F

  • Type: Amplifier
  • Frequency: 5.5GHz ~ 5.8GHz
  • For Use With/Related Products: CGH55015F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
パッケージ: -
在庫4,608
CMPA5585030F-TB
Cree/Wolfspeed

TEST BOARD

  • Type: -
  • Frequency: -
  • For Use With/Related Products: -
  • Supplied Contents: -
パッケージ: -
在庫3,222
CGH40006S-KIT
Cree/Wolfspeed

FET RF HEMT 28V 100MA 440203

  • Type: Amplifier
  • Frequency: 0Hz ~ 6GHz
  • For Use With/Related Products: CGH40006S
  • Supplied Contents: Partially Populated Board - Main IC Not Included
パッケージ: -
在庫8,496