ページ 42 - トランジスタ - FET、MOSFET - RF | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - RF

レコード 3,855
ページ  42/138
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部品番号
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説明
パッケージ
在庫
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
MRF7S18125AHR3
NXP

FET RF 65V 1.88GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 125W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
パッケージ: NI-780
在庫5,200
1.88GHz
17dB
28V
-
-
1.1A
125W
65V
NI-780
NI-780
MRF5S4125NR1
NXP

FET RF 65V 465MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 465MHz
  • Gain: 23dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
パッケージ: TO-270AB
在庫3,440
465MHz
23dB
28V
-
-
1.1A
25W
65V
TO-270AB
TO-270 WB-4
hot MRF21030LR3
NXP

FET RF 65V 2.14GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: NI-400
  • Supplier Device Package: NI-400
パッケージ: NI-400
在庫9,180
2.14GHz
13dB
28V
-
-
250mA
30W
65V
NI-400
NI-400
MRF5S4140HR5
NXP

FET RF 65V 465MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 465MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.25A
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
パッケージ: NI-780
在庫5,712
465MHz
21dB
28V
-
-
1.25A
28W
65V
NI-780
NI-780
BF245B_D74Z
Fairchild/ON Semiconductor

JFET N-CH 30V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫6,768
-
-
-
15mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLF6G10-160RN,112
Ampleon USA Inc.

RF FET LDMOS 65V 22.5DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 922.5MHz ~ 957.5MHz
  • Gain: 22.5dB
  • Voltage - Test: 32V
  • Current Rating: 39A
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
パッケージ: SOT-502A
在庫3,568
922.5MHz ~ 957.5MHz
22.5dB
32V
39A
-
1.2A
32W
65V
SOT-502A
LDMOST
MMRF1007HSR5
NXP

FET RF 2CH 110V 1.03GHZ NI-1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
パッケージ: NI-1230-4S
在庫3,888
1.03GHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230-4S
NI-1230-4S
BLF898U
Ampleon USA Inc.

BLF898/SOT539/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,008
-
-
-
-
-
-
-
-
-
-
BLF888AS,112
Ampleon USA Inc.

RF FET LDMOS 110V 21DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 110V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
パッケージ: SOT539B
在庫3,488
860MHz
21dB
50V
-
-
1.3A
250W
110V
SOT539B
SOT539B
MRF8P20140WHR3
NXP

FET RF 2CH 65V 1.91GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz ~ 1.91GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
パッケージ: NI-780-4
在庫4,528
1.88GHz ~ 1.91GHz
16dB
28V
-
-
500mA
24W
65V
NI-780-4
NI-780-4
BLF6H10LS-160,112
Ampleon USA Inc.

RF FET LDMOS 104V 20DB SOT467B

  • Transistor Type: LDMOS
  • Frequency: 952.5MHz ~ 957.5MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 38W
  • Voltage - Rated: 104V
  • Package / Case: SOT467B
  • Supplier Device Package: LDMOST
パッケージ: SOT467B
在庫6,096
952.5MHz ~ 957.5MHz
20dB
50V
-
-
600mA
38W
104V
SOT467B
LDMOST
SD2941-10RW
STMicroelectronics

IC TRANS RF HF/VHF/UHF M174

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 15.8dB
  • Voltage - Test: 50V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 175W
  • Voltage - Rated: 130V
  • Package / Case: M174
  • Supplier Device Package: M174
パッケージ: M174
在庫3,472
175MHz
15.8dB
50V
20A
-
250mA
175W
130V
M174
M174
PD84010TR-E
STMicroelectronics

FET RF 40V 870MHZ 10PWRSOIC

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16.3dB
  • Voltage - Test: 7.5V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 2W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
パッケージ: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
在庫6,352
870MHz
16.3dB
7.5V
8A
-
300mA
2W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
hot ATF-511P8-TR1
Broadcom Limited

FET RF 7V 2GHZ 8-LPCC

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 14.8dB
  • Voltage - Test: 4.5V
  • Current Rating: 1A
  • Noise Figure: 1.4dB
  • Current - Test: 200mA
  • Power - Output: 30dBm
  • Voltage - Rated: 7V
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-LPCC (2x2)
パッケージ: 8-WFDFN Exposed Pad
在庫542,952
2GHz
14.8dB
4.5V
1A
1.4dB
200mA
30dBm
7V
8-WFDFN Exposed Pad
8-LPCC (2x2)
BLC8G27LS-60AVZ
Ampleon USA Inc.

TRANS RF 60W LDMOS DFM6F

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT1275-3
  • Supplier Device Package: SOT1275-3
パッケージ: SOT1275-3
在庫5,552
-
-
-
-
-
-
-
-
SOT1275-3
SOT1275-3
CGHV22100F
Cree/Wolfspeed

FET RF 125V 2.2GHZ 440162

  • Transistor Type: HEMT
  • Frequency: 1.8GHz ~ 2.2GHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 100W
  • Voltage - Rated: 125V
  • Package / Case: 440162
  • Supplier Device Package: 440162
パッケージ: 440162
在庫4,848
1.8GHz ~ 2.2GHz
20dB
50V
6A
-
500mA
100W
125V
440162
440162
275X2-501N16A-00
IXYS

RF MOSFET 2N-CHANNEL DE275

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 65MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1180W
  • Voltage - Rated: 500V
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE275
パッケージ: 8-SMD, Flat Lead Exposed Pad
在庫7,184
65MHz
-
-
1mA
-
-
1180W
500V
8-SMD, Flat Lead Exposed Pad
DE275
BLF7G24LS-100
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: 5µA
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 100W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
パッケージ: -
Request a Quote
2.3GHz ~ 2.4GHz
18dB
28 V
5µA
-
900 mA
100W
65 V
SOT-502B
SOT502B
SAV-331
Mini-Circuits

RF MOSFET D-PHEMT 4V MMM1362

  • Transistor Type: D-pHEMT
  • Frequency: 10MHz ~ 4GHz
  • Gain: 24.6dB
  • Voltage - Test: 4 V
  • Current Rating: -
  • Noise Figure: 0.9dB
  • Current - Test: 60 mA
  • Power - Output: 21.1dBm
  • Voltage - Rated: 5 V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: MMM1362
パッケージ: -
在庫3,804
10MHz ~ 4GHz
24.6dB
4 V
-
0.9dB
60 mA
21.1dBm
5 V
SC-82A, SOT-343
MMM1362
IGN1011L70
Integra Technologies Inc.

RF MOSFET GAN HEMT 50V PL32A2

  • Transistor Type: GaN HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 22dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 22 mA
  • Power - Output: 80W
  • Voltage - Rated: 120 V
  • Package / Case: PL32A2
  • Supplier Device Package: PL32A2
パッケージ: -
在庫33
1.03GHz ~ 1.09GHz
22dB
50 V
-
-
22 mA
80W
120 V
PL32A2
PL32A2
BLA1011-300
Rochester Electronics, LLC

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
DE375-501N21A
IXYS-RF

RF MOSFET DE375

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 50MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 940W
  • Voltage - Rated: 500 V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE375
パッケージ: -
Request a Quote
50MHz
-
-
25A
-
-
940W
500 V
6-SMD, Flat Lead Exposed Pad
DE375
BLF8G20LS-200V
Ampleon USA Inc.

RF MOSFET LDMOS 28V LDMOST

  • Transistor Type: LDMOS
  • Frequency: 1.8GHz ~ 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 28 V
  • Current Rating: 4.2µA
  • Noise Figure: -
  • Current - Test: 1.6 A
  • Power - Output: 200W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1120B
  • Supplier Device Package: LDMOST
パッケージ: -
Request a Quote
1.8GHz ~ 2GHz
17.5dB
28 V
4.2µA
-
1.6 A
200W
65 V
SOT-1120B
LDMOST
A3G22H400-04SR3
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PXAC192908FV-V1-R0
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PXAC243502FV-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275-4

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850 mA
  • Power - Output: 68W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275-4
  • Supplier Device Package: H-37275-4
パッケージ: -
Request a Quote
2.4GHz
15dB
28 V
-
-
850 mA
68W
65 V
H-37275-4
H-37275-4
A2V07H525-04NR6
NXP

RF MOSFET LDMOS 48V OM1230-4

  • Transistor Type: LDMOS
  • Frequency: 595MHz ~ 851MHz
  • Gain: 17.5dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 700 mA
  • Power - Output: 120W
  • Voltage - Rated: 105 V
  • Package / Case: OM-1230-4L
  • Supplier Device Package: OM-1230-4L
パッケージ: -
Request a Quote
595MHz ~ 851MHz
17.5dB
48 V
10µA
-
700 mA
120W
105 V
OM-1230-4L
OM-1230-4L
B11G2327N71DX
Ampleon USA Inc.

RF MOSFET LDMOS 28V 36QFN

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 30dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
パッケージ: -
Request a Quote
2.3GHz ~ 2.7GHz
30dB
28 V
1.4µA
-
-
-
65 V
36-QFN Exposed Pad
36-PQFN (12x7)