ページ 94 - トランジスタ - FET、MOSFET - RF | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - RF

レコード 3,855
ページ  94/138
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パッケージ
在庫
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA210701EV4T500XWSA1
Infineon Technologies

IC FET RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 16.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
パッケージ: 2-Flatpack, Fin Leads
在庫3,312
2.11GHz ~ 2.17GHz
16.5dB
30V
-
-
550mA
18W
65V
2-Flatpack, Fin Leads
H-36265-2
PTFA210601EV4R250FTMA1
Infineon Technologies

IC FET RF LDMOS 60W H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
パッケージ: 2-Flatpack, Fin Leads
在庫3,344
2.14GHz
16dB
28V
10µA
-
550mA
12W
65V
2-Flatpack, Fin Leads
H-36265-2
PTFA142401ELV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 240W H-33288-2

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 16.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 240W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-33288-2
パッケージ: 2-Flatpack, Fin Leads
在庫5,024
1.5GHz
16.5dB
30V
10µA
-
2A
240W
65V
2-Flatpack, Fin Leads
H-33288-2
PD55008TR
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
パッケージ: PowerSO-10 Exposed Bottom Pad
在庫5,328
500MHz
17dB
12.5V
4A
-
150mA
8W
40V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
MRFG35005NT1
NXP

FET RF 15V 3.55GHZ 1.5PLD

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 11dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 80mA
  • Power - Output: 4.5W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
パッケージ: PLD-1.5
在庫4,848
3.55GHz
11dB
12V
-
-
80mA
4.5W
15V
PLD-1.5
PLD-1.5
hot ATF-55143-TR1
Broadcom Limited

FET RF 5V 2GHZ SOT-343

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 17.7dB
  • Voltage - Test: 2.7V
  • Current Rating: 100mA
  • Noise Figure: 0.6dB
  • Current - Test: 10mA
  • Power - Output: 14.4dBm
  • Voltage - Rated: 5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
パッケージ: SC-82A, SOT-343
在庫287,520
2GHz
17.7dB
2.7V
100mA
0.6dB
10mA
14.4dBm
5V
SC-82A, SOT-343
SOT-343
BLL1214-250,112
Ampleon USA Inc.

RF FET LDMOS 75V 12DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 12dB
  • Voltage - Test: 36V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 250W
  • Voltage - Rated: 75V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
パッケージ: SOT-502A
在庫3,456
1.2GHz ~ 1.4GHz
12dB
36V
-
-
150mA
250W
75V
SOT-502A
LDMOST
BLF177CR,112
Ampleon USA Inc.

RF FET NCHA 125V SOT121B

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: 50V
  • Current Rating: 16A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 150W
  • Voltage - Rated: 125V
  • Package / Case: SOT-121B
  • Supplier Device Package: CRFM4
パッケージ: SOT-121B
在庫4,624
-
-
50V
16A
-
100mA
150W
125V
SOT-121B
CRFM4
PXAC182908FVV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,800
-
-
-
-
-
-
-
-
-
-
PTFA072401FLV5R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 30V H-34288-2

  • Transistor Type: LDMOS
  • Frequency: 725MHz ~ 770MHz
  • Gain: 19dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 240W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-34288-2
パッケージ: 2-Flatpack, Fin Leads
在庫7,152
725MHz ~ 770MHz
19dB
30V
10µA
-
1.9A
240W
65V
2-Flatpack, Fin Leads
H-34288-2
AFT21S232SR3
NXP

FET RF 65V 2.11GHZ NI780S-2

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 16.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
パッケージ: NI-780S
在庫6,288
2.11GHz
16.7dB
28V
-
-
1.5A
50W
65V
NI-780S
NI-780S
BLP10H660PY
Ampleon USA Inc.

BLP10H660P/SOT1223/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,744
-
-
-
-
-
-
-
-
-
-
PD85015S-E
STMicroelectronics

IC RF PWR TRANSISTOR PWRSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16dB
  • Voltage - Test: 13.6V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
パッケージ: PowerSO-10 Exposed Bottom Pad
在庫5,376
870MHz
16dB
13.6V
5A
-
150mA
15W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
MRF140
M/A-Com Technology Solutions

FET RF 65V 150MHZ 211-11

  • Transistor Type: N-Channel
  • Frequency: 30MHz ~ 150MHz
  • Gain: 6dB ~ 15dB
  • Voltage - Test: 28V
  • Current Rating: 16A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
パッケージ: 211-11, Style 2
在庫6,048
30MHz ~ 150MHz
6dB ~ 15dB
28V
16A
-
250mA
150W
65V
211-11, Style 2
211-11, Style 2
ARF448AG
Microsemi Corporation

RF FETS N CH 450V 15A TO247

  • Transistor Type: N-Channel
  • Frequency: 40.68MHz
  • Gain: 15dB
  • Voltage - Test: 150V
  • Current Rating: 15A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 230W
  • Voltage - Rated: 450V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫5,600
40.68MHz
15dB
150V
15A
-
-
230W
450V
TO-247-3
TO-247
BLP8G10S-45PGY
Ampleon USA Inc.

RF FET LDMOS 65V 20.8DB 4BESOP

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 952.5MHz ~ 957.5MHz
  • Gain: 20.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 224mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: 4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package: 4-HSOP
パッケージ: 4-BESOP (0.173", 4.40mm Width)
在庫5,568
952.5MHz ~ 957.5MHz
20.8dB
28V
-
-
224mA
2.5W
65V
4-BESOP (0.173", 4.40mm Width)
4-HSOP
AFT20S015GNR1
NXP

FET RF 65V 2.17GHZ TO270-2G

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 132mA
  • Power - Output: 1.5W
  • Voltage - Rated: 65V
  • Package / Case: TO-270-2 Gull Wing
  • Supplier Device Package: TO-270-2 GULL
パッケージ: TO-270-2 Gull Wing
在庫4,992
2.17GHz
17.6dB
28V
-
-
132mA
1.5W
65V
TO-270-2 Gull Wing
TO-270-2 GULL
PD54008S-E
STMicroelectronics

FET RF 25V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 11.5dB
  • Voltage - Test: 7.5V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 25V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
パッケージ: PowerSO-10 Exposed Bottom Pad
在庫7,872
500MHz
11.5dB
7.5V
5A
-
150mA
8W
25V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
CE3520K3-C1
CEL

RF FET 4V 20GHZ 4MICROX

  • Transistor Type: pHEMT FET
  • Frequency: 20GHz
  • Gain: 13.8dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 0.8dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: 4-Micro-X
  • Supplier Device Package: 4-Micro-X
パッケージ: 4-Micro-X
在庫5,536
20GHz
13.8dB
2V
15mA
0.8dB
10mA
125mW
4V
4-Micro-X
4-Micro-X
BLS7G3135L-350P,11
Ampleon USA Inc.

RF FET LDMOS 65V 10DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 3.5GHz
  • Gain: 10dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
パッケージ: SOT539A
在庫6,288
3.5GHz
10dB
32V
-
-
200mA
320W
65V
SOT539A
SOT539A
STAC4933
STMicroelectronics

MOSF RF N CH 200V 40A STAC177B

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 200V
  • Package / Case: STAC177B
  • Supplier Device Package: STAC177B
パッケージ: STAC177B
在庫7,344
30MHz
24dB
50V
40A
-
250mA
300W
200V
STAC177B
STAC177B
BLC10G27XS-551AVTZ
Ampleon USA Inc.

RF MOSFET SOT1258

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFC262157FH-V1-R0
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
MRF24G300HS-2UP
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: 15.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 336W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
パッケージ: -
在庫6
2.4GHz ~ 2.5GHz
15.3dB
48 V
-
-
-
336W
125 V
NI-780S-4L
NI-780S-4L
IRFU1920
Harris Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
CGHV38375F
MACOM Technology Solutions

RF MOSFET GAN 50V 440226

  • Transistor Type: GaN
  • Frequency: 2.75GHz ~ 3.75GHz
  • Gain: 12.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 400W
  • Voltage - Rated: 150 V
  • Package / Case: 440226
  • Supplier Device Package: 440226
パッケージ: -
在庫210
2.75GHz ~ 3.75GHz
12.5dB
50 V
-
-
500 mA
400W
150 V
440226
440226
BLU9H0408L-800PU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539A

  • Transistor Type: LDMOS
  • Frequency: 800MHz
  • Gain: 20.5dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.3 A
  • Power - Output: 800W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-539A
  • Supplier Device Package: SOT539A
パッケージ: -
在庫180
800MHz
20.5dB
50 V
2.8µA
-
1.3 A
800W
65 V
SOT-539A
SOT539A
STAC1011-500
STMicroelectronics

RF MOSFET LDMOS 50V STAC780

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 1.2GHz
  • Gain: 16dB
  • Voltage - Test: 50 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 500W
  • Voltage - Rated: 110 V
  • Package / Case: STAC780-4F
  • Supplier Device Package: STAC780-4F
パッケージ: -
Request a Quote
700MHz ~ 1.2GHz
16dB
50 V
1µA
-
200 mA
500W
110 V
STAC780-4F
STAC780-4F