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IRF7467PBF

Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,176

MOSFET (Metal Oxide)

30V

11A (Ta)

2.8V, 10V

2V @ 250µA

32nC @ 4.5V

2530pF @ 15V

±12V

-

2.5W (Ta)

12 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

AO3400

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 5.8A SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫20,683,500

-

RJK0601DPN-E0#T2

Renesas Electronics America

MOSFET N-CH 60V 110A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 55A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫2,656

MOSFET (Metal Oxide)

60V

110A (Ta)

10V

-

141nC @ 10V

10000pF @ 10V

±20V

-

200W (Tc)

3.1 mOhm @ 55A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

SIB419DK-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 9A SC75-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2.45W (Ta), 13.1W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-75-6L Single
Package / Case: PowerPAK? SC-75-6L

パッケージ: PowerPAK? SC-75-6L

在庫4,816

MOSFET (Metal Oxide)

12V

9A (Tc)

1.8V, 4.5V

1V @ 250µA

11.82nC @ 5V

562pF @ 6V

±8V

-

2.45W (Ta), 13.1W (Tc)

60 mOhm @ 5.2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Single

PowerPAK? SC-75-6L

SI7718DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

パッケージ: PowerPAK? 1212-8

在庫6,192

MOSFET (Metal Oxide)

30V

35A (Tc)

4.5V, 10V

2.5V @ 250µA

45nC @ 10V

1600pF @ 15V

±20V

-

3.7W (Ta), 52W (Tc)

6 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

NTMFS4847NT1G

ON Semiconductor

MOSFET N-CH 30V 11.5A SO-8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

在庫152,832

MOSFET (Metal Oxide)

30V

11.5A (Ta), 85A (Tc)

4.5V, 11.5V

2.5V @ 250µA

28nC @ 4.5V

2614pF @ 12V

±16V

-

880mW (Ta), 48.4W (Tc)

4.1 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

NTB22N06LT4

ON Semiconductor

MOSFET N-CH 60V 22A D2PAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 60W (Tj)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 11A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫3,792

MOSFET (Metal Oxide)

60V

22A (Ta)

5V

2V @ 250µA

20nC @ 5V

690pF @ 25V

±10V

-

60W (Tj)

65 mOhm @ 11A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLZ24STRL

Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫19,200

MOSFET (Metal Oxide)

60V

17A (Tc)

4V, 5V

2V @ 250µA

18nC @ 5V

870pF @ 25V

±10V

-

3.7W (Ta), 60W (Tc)

100 mOhm @ 10A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STD30PF03L-1

STMicroelectronics

MOSFET P-CH 30V 24A IPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫100,824

MOSFET (Metal Oxide)

30V

24A (Tc)

5V, 10V

1V @ 250µA

28nC @ 5V

1670pF @ 25V

±16V

-

70W (Tc)

28 mOhm @ 12A, 10V

175°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

IRF7468PBF

Infineon Technologies

MOSFET N-CH 40V 9.4A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 20V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫10,908

MOSFET (Metal Oxide)

40V

9.4A (Ta)

4.5V, 10V

2V @ 250µA

34nC @ 4.5V

2460pF @ 20V

±12V

-

2.5W (Ta)

15.5 mOhm @ 9.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IXFN80N48

IXYS

MOSFET N-CH 480V 80A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 480V
Current - Continuous Drain (Id) @ 25°C: 80A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫7,728

MOSFET (Metal Oxide)

480V

80A

10V

4V @ 8mA

380nC @ 10V

9890pF @ 25V

±20V

-

700W (Tc)

45 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

APT10M11JVRU2

Microsemi Corporation

MOSFET N-CH 100V 142A SOT227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 71A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫2,784

MOSFET (Metal Oxide)

100V

142A

10V

4V @ 2.5mA

300nC @ 10V

8600pF @ 25V

±30V

-

450W (Tc)

11 mOhm @ 71A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227

SOT-227-4, miniBLOC

IXTH360N055T2

IXYS

MOSFET N-CH 55V 360A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 935W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫4,384

MOSFET (Metal Oxide)

55V

360A (Tc)

10V

4V @ 250µA

330nC @ 10V

20000pF @ 25V

±20V

-

935W (Tc)

2.4 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

CSD23285F5

Texas Instruments

MOSFET P-CH 12V

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 6V
Vgs (Max): -6V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PICOSTAR
Package / Case: 3-XFDFN

パッケージ: 3-XFDFN

在庫5,680

MOSFET (Metal Oxide)

12V

5.4A (Ta)

1.5V, 4.5V

950mV @ 250µA

4.2nC @ 4.5V

628pF @ 6V

-6V

-

500mW (Ta)

35 mOhm @ 1A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

3-PICOSTAR

3-XFDFN

SIHW61N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 64A TO247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 47 mOhm @ 30.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫3,120

MOSFET (Metal Oxide)

650V

64A (Tc)

10V

4V @ 250µA

371nC @ 10V

7407pF @ 100V

±30V

-

520W (Tc)

47 mOhm @ 30.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247AD

TO-247-3

STP150NF55

STMicroelectronics

MOSFET N-CH 55V 120A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫470,376

MOSFET (Metal Oxide)

55V

120A (Tc)

10V

4V @ 250µA

190nC @ 10V

4400pF @ 25V

±20V

-

300W (Tc)

6 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRF7831TRPBF

Infineon Technologies

MOSFET N-CH 30V 21A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6240pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫50,400

MOSFET (Metal Oxide)

30V

21A (Ta)

4.5V, 10V

2.35V @ 250µA

60nC @ 4.5V

6240pF @ 15V

±12V

-

2.5W (Ta)

3.6 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

FDPF18N50

Fairchild/ON Semiconductor

MOSFET N-CH 500V 18A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫12,300

MOSFET (Metal Oxide)

500V

18A (Tc)

10V

5V @ 250µA

60nC @ 10V

2860pF @ 25V

±30V

-

38.5W (Tc)

265 mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

SI7423DN-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 7.4A 1212-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 11.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

パッケージ: PowerPAK? 1212-8

在庫612,324

MOSFET (Metal Oxide)

30V

7.4A (Ta)

4.5V, 10V

3V @ 250µA

56nC @ 10V

-

±20V

-

1.5W (Ta)

18 mOhm @ 11.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

BSC097N06NSATMA1

Infineon Technologies

MOSFET N-CH 60V 46A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

在庫50,652

MOSFET (Metal Oxide)

60V

46A (Tc)

6V, 10V

3.3V @ 14µA

15nC @ 10V

1075pF @ 30V

±20V

-

2.5W (Ta), 36W (Tc)

9.7 mOhm @ 40A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

ZVN4306GTA

Diodes Incorporated

MOSFET N-CH 60V 2.1A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫181,752

MOSFET (Metal Oxide)

60V

2.1A (Ta)

5V, 10V

3V @ 1mA

-

350pF @ 25V

±20V

-

3W (Ta)

330 mOhm @ 3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

IPB012N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 189µA
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫2,400

MOSFET (Metal Oxide)

40 V

41A (Ta), 197A (Tc)

6V, 10V

3.4V @ 189µA

239 nC @ 10 V

11300 pF @ 20 V

±20V

-

3.8W (Ta), 250W (Tc)

1.25mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

2SK3980-TD-E

onsemi

N-CHANNEL MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

IXTH1N250

IXYS

MOSFET N-CH 2500V 1.5A TO-247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3

パッケージ: -

在庫612

MOSFET (Metal Oxide)

2500 V

1.5A (Tc)

-

4V @ 250µA

41 nC @ 10 V

1660 pF @ 25 V

-

40Ohm @ 750mA, 10V

-

Through Hole

TO-247AD

TO-247-3

G3R450MT17J-TR

GeneSiC Semiconductor

1700V 450M TO-263-7 G3R SIC MOSF

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
Vgs (Max): +15V, -5V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

パッケージ: -

在庫1,530

SiCFET (Silicon Carbide)

1700 V

8A (Tc)

15V

2.7V @ 2mA

18 nC @ 15 V

454 pF @ 1000 V

+15V, -5V

-

71W (Tc)

585mOhm @ 4A, 15V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-7

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

PJD60N04S-AU_L2_002A1

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2862 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

40 V

22.5A (Ta), 140A (Tc)

4.5V, 10V

2.3V @ 50µA

41 nC @ 10 V

2862 pF @ 25 V

±20V

-

3W (Ta), 115W (Tc)

3.3mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

SIHA125N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 11A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack

パッケージ: -

在庫2,976

MOSFET (Metal Oxide)

600 V

11A (Tc)

10V

5V @ 250µA

47 nC @ 10 V

1533 pF @ 100 V

±30V

-

179W (Tc)

125mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Full Pack

TO-220-3 Full Pack

TMS70C02FNLR

Texas Instruments

MMP 8-BIT CMOS PLCC 44 PIN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-