Infineon Technologies 製品 - RFスイッチ | Heisener Electronics
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Infineon Technologies 製品 - RFスイッチ

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数量
Frequency - Upper
Isolation @ Frequency
Insertion Loss @ Frequency
IIP3
Topology
Circuit
P1dB
Features
Impedance
Operating Temperature
Voltage - Supply
RF Type
Package / Case
Supplier Device Package
BGS17GA14E6327XTSA1
Infineon Technologies

CMOS SWITCH

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3.8GHz
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: SP7T
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.4 V
  • RF Type: LTE, W-CDMA
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,942
3.8GHz
-
-
-
-
SP7T
-
-
-
-30°C ~ 85°C
2.4 V ~ 3.4 V
LTE, W-CDMA
-
-
BGS16GA14E6327XTSA1
Infineon Technologies

CMOS SWITCH

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3.8GHz
  • Isolation @ Frequency: 33dB @ 3GHz (typ)
  • Insertion Loss @ Frequency: 0.5dB @ 3GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP6T
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 3V
  • RF Type: LTE, W-CDMA
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,688
3.8GHz
33dB @ 3GHz (typ)
0.5dB @ 3GHz
-
-
SP6T
-
-
-
-30°C ~ 85°C
3V
LTE, W-CDMA
-
-
BGS13PN10E6327XTSA1
Infineon Technologies

CMOS SWITCH

  • Frequency - Lower: 500MHz
  • Frequency - Upper: 6GHz
  • Isolation @ Frequency: 17dB @ 6GHz (typ)
  • Insertion Loss @ Frequency: 1.5dB @ 6GHz
  • IIP3: 76dBm (typ)
  • Topology: -
  • Circuit: SP3T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -40°C ~ 85°C
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • RF Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫8,910
6GHz
17dB @ 6GHz (typ)
1.5dB @ 6GHz
76dBm (typ)
-
SP3T
-
-
50 Ohm
-40°C ~ 85°C
1.8 V ~ 3.6 V
-
-
-
BGS12PN10E6327XTSA1
Infineon Technologies

CMOS SWITCH

  • Frequency - Lower: 500MHz
  • Frequency - Upper: 6GHz
  • Isolation @ Frequency: 20dB @ 6GHz (typ)
  • Insertion Loss @ Frequency: 0.6dB @ 6GHz
  • IIP3: -
  • Topology: -
  • Circuit: SPDT
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • RF Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,232
6GHz
20dB @ 6GHz (typ)
0.6dB @ 6GHz
-
-
SPDT
-
-
50 Ohm
-30°C ~ 85°C
1.8 V ~ 3.6 V
-
-
-
BGSA11GN10E6327XTSA1
Infineon Technologies

IC SWITCH RF 10TSNP

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,124
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BGS12S3N6E6327XTSA1
Infineon Technologies

IC RF SWITCH CMOS 6TSNP

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,246
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BGS14AN16E6327XTSA1
Infineon Technologies

IC SWITCH RF SP4T TSNP16-6

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 27dB @ 2.69Hz (typ)
  • Insertion Loss @ Frequency: 0.69dB @ 2.69GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SP4T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.85 V ~ 4.7 V
  • RF Type: W-CDMA
  • Package / Case: 16-WFQFN Exposed Pad
  • Supplier Device Package: PG-TSNP-16-6
パッケージ: 16-WFQFN Exposed Pad
在庫27,642
3GHz
27dB @ 2.69Hz (typ)
0.69dB @ 2.69GHz
-
Reflective
SP4T
-
-
50 Ohm
-30°C ~ 85°C
2.85 V ~ 4.7 V
W-CDMA
16-WFQFN Exposed Pad
PG-TSNP-16-6
BGS22W2L10E6327XTSA1
Infineon Technologies

IC SWITCH RF DPDT TSLP10-1

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 2GHz
  • Isolation @ Frequency: 27dB @ 1.91Hz (typ)
  • Insertion Loss @ Frequency: 0.39dB @ 1.91GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: DPDT
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: General Purpose
  • Package / Case: 10-XFQFN
  • Supplier Device Package: TSLP-10-1
パッケージ: 10-XFQFN
在庫60,456
2GHz
27dB @ 1.91Hz (typ)
0.39dB @ 1.91GHz
-
Reflective
DPDT
-
-
50 Ohm
-30°C ~ 85°C
2.4 V ~ 3.6 V
General Purpose
10-XFQFN
TSLP-10-1
BGSF110GN26E6327XTSA1
Infineon Technologies

IC SWITCH RF 26TSNP

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3.8GHz
  • Isolation @ Frequency: 40dB @ 3GHz (typ)
  • Insertion Loss @ Frequency: 1.3dB @ 3GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP10T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.3 V
  • RF Type: GSM, LTE, W-CDMA
  • Package / Case: 26-WFQFN Exposed Pad
  • Supplier Device Package: PG-TSNP-26-2
パッケージ: 26-WFQFN Exposed Pad
在庫6,894
3.8GHz
40dB @ 3GHz (typ)
1.3dB @ 3GHz
-
-
SP10T
-
-
50 Ohm
-30°C ~ 85°C
2.4 V ~ 3.3 V
GSM, LTE, W-CDMA
26-WFQFN Exposed Pad
PG-TSNP-26-2
BGSF1717MN26E6327XTSA1
Infineon Technologies

IC SWITCH RF 26TSNP

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: 26-VFQFN Exposed Pad
  • Supplier Device Package: PG-TSNP-26-3
パッケージ: 26-VFQFN Exposed Pad
在庫4,230
-
-
-
-
-
-
-
-
-
-
-
-
26-VFQFN Exposed Pad
PG-TSNP-26-3
BGS16MN14E6327XTSA1
Infineon Technologies

IC SWITCH RF 14TSNP

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 2.7GHz
  • Isolation @ Frequency: 33dB @ 2GHz
  • Insertion Loss @ Frequency: 0.45dB @ 2GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP6T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • RF Type: WCDMA
  • Package / Case: 14-WFQFN Exposed Pad
  • Supplier Device Package: PG-TSNP-14-3
パッケージ: 14-WFQFN Exposed Pad
在庫4,230
2.7GHz
33dB @ 2GHz
0.45dB @ 2GHz
-
-
SP6T
-
-
50 Ohm
-30°C ~ 85°C
2.5 V ~ 5.5 V
WCDMA
14-WFQFN Exposed Pad
PG-TSNP-14-3
BGS18MN14E6327XTSA1
Infineon Technologies

IC SWITCH RF 14TSNP

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 2.7GHz
  • Isolation @ Frequency: 29dB @ 2GHz (typ)
  • Insertion Loss @ Frequency: 0.8dB @ 2GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP8T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • RF Type: LTE, W-CDMA
  • Package / Case: 14-WFQFN Exposed Pad
  • Supplier Device Package: PG-TSNP-14-3
パッケージ: 14-WFQFN Exposed Pad
在庫7,542
2.7GHz
29dB @ 2GHz (typ)
0.8dB @ 2GHz
-
-
SP8T
-
-
50 Ohm
-30°C ~ 85°C
2.5 V ~ 5.5 V
LTE, W-CDMA
14-WFQFN Exposed Pad
PG-TSNP-14-3
BGSX22GN10E6327XTSA1
Infineon Technologies

IC SWITCH RF 10TSNP

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: 10-XFQFN
  • Supplier Device Package: PG-TSNP-10-1
パッケージ: 10-XFQFN
在庫3,330
-
-
-
-
-
-
-
-
-
-
-
-
10-XFQFN
PG-TSNP-10-1
BGSA14GN10E6327XTSA1
Infineon Technologies

IC SWITCH RF 10TSNP

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: 10-XFQFN
  • Supplier Device Package: PG-TSNP-10-1
パッケージ: 10-XFQFN
在庫6,894
-
-
-
-
-
-
-
-
-
-
-
-
10-XFQFN
PG-TSNP-10-1
BGSA13GN10E6327XTSA1
Infineon Technologies

IC SWITCH RF 10TSNP

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: 10-XFQFN
  • Supplier Device Package: PG-TSNP-10-1
パッケージ: 10-XFQFN
在庫4,428
-
-
-
-
-
-
-
-
-
-
-
-
10-XFQFN
PG-TSNP-10-1
BGSA12GN10E6327XTSA1
Infineon Technologies

IC SWITCH RF 10TSNP

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: 10-XFQFN
  • Supplier Device Package: PG-TSNP-10-1
パッケージ: 10-XFQFN
在庫2,286
-
-
-
-
-
-
-
-
-
-
-
-
10-XFQFN
PG-TSNP-10-1
BGS22WL10E6327XTSA1
Infineon Technologies

IC SWITCH RF DPDT TSLP10-1

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 24dB @ 2.69GHz (typ)
  • Insertion Loss @ Frequency: 0.45dB @ 2.69GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: DPDT
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: General Purpose
  • Package / Case: 10-XFQFN
  • Supplier Device Package: TSLP-10-1
パッケージ: 10-XFQFN
在庫7,452
3GHz
24dB @ 2.69GHz (typ)
0.45dB @ 2.69GHz
-
Reflective
DPDT
-
-
50 Ohm
-30°C ~ 85°C
2.4 V ~ 3.6 V
General Purpose
10-XFQFN
TSLP-10-1
BGS 12AL7-4 E6327
Infineon Technologies

IC SW SPDT 30MHZ - 3GHZ TSLP7-4

  • Frequency - Lower: 30MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 25dB @ 2GHz (typ)
  • Insertion Loss @ Frequency: 0.5dB @ 2GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SPDT
  • P1dB: -
  • Features: DC Blocked, Single Line Control
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: General Purpose
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: TSLP-7-4
パッケージ: 6-XFDFN Exposed Pad
在庫4,788
3GHz
25dB @ 2GHz (typ)
0.5dB @ 2GHz
-
Reflective
SPDT
-
DC Blocked, Single Line Control
50 Ohm
-30°C ~ 85°C
2.4 V ~ 3.6 V
General Purpose
6-XFDFN Exposed Pad
TSLP-7-4
BGS14GA14E6327XTSA1
Infineon Technologies

RF SWITCH

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 6GHz
  • Isolation @ Frequency: 27dB @ 6GHz (typ)
  • Insertion Loss @ Frequency: 0.65dB @ 6GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP4T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 3V
  • RF Type: -
  • Package / Case: 14-UFQFN Exposed Pad
  • Supplier Device Package: ATSLP-14-5
パッケージ: 14-UFQFN Exposed Pad
在庫6,048
6GHz
27dB @ 6GHz (typ)
0.65dB @ 6GHz
-
-
SP4T
-
-
50 Ohm
-30°C ~ 85°C
3V
-
14-UFQFN Exposed Pad
ATSLP-14-5
BGS13GA14E6327XTSA1
Infineon Technologies

RF SWITCH

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 6GHz
  • Isolation @ Frequency: 27dB @ 6GHz (typ)
  • Insertion Loss @ Frequency: 0.65dB @ 6GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP3T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 3V
  • RF Type: -
  • Package / Case: 14-UFQFN Exposed Pad
  • Supplier Device Package: ATSLP-14-4
パッケージ: 14-UFQFN Exposed Pad
在庫3,258
6GHz
27dB @ 6GHz (typ)
0.65dB @ 6GHz
-
-
SP3T
-
-
50 Ohm
-30°C ~ 85°C
3V
-
14-UFQFN Exposed Pad
ATSLP-14-4
BGS13S2N9E6327XTSA1
Infineon Technologies

RF SWITCH

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 23dB @ 3GHz (typ)
  • Insertion Loss @ Frequency: 0.55dB @ 3GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP3T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -40°C ~ 85°C
  • Voltage - Supply: 1.8 V ~ 3.3 V
  • RF Type: -
  • Package / Case: 9-XFLGA
  • Supplier Device Package: TSNP-9-3
パッケージ: 9-XFLGA
在庫4,464
3GHz
23dB @ 3GHz (typ)
0.55dB @ 3GHz
-
-
SP3T
-
-
50 Ohm
-40°C ~ 85°C
1.8 V ~ 3.3 V
-
9-XFLGA
TSNP-9-3
BGS18GA14E6327XTSA1
Infineon Technologies

RF SWITCH

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3.8GHz
  • Isolation @ Frequency: 33dB @ 3.5GHz (typ)
  • Insertion Loss @ Frequency: 0.7dB @ 3.5GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP8T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 3V
  • RF Type: -
  • Package / Case: 14-UFQFN Exposed Pad
  • Supplier Device Package: ATSLP-14-4
パッケージ: 14-UFQFN Exposed Pad
在庫35,958
3.8GHz
33dB @ 3.5GHz (typ)
0.7dB @ 3.5GHz
-
-
SP8T
-
-
50 Ohm
-30°C ~ 85°C
3V
-
14-UFQFN Exposed Pad
ATSLP-14-4
BGS15MA12E6327XTSA1
Infineon Technologies

IC SWITCH RF 12ATSLP

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 2.9GHz
  • Isolation @ Frequency: 25dB @ 2.5GHz (typ)
  • Insertion Loss @ Frequency: 0.45dB @ 2.5GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP5T
  • P1dB: 30dBm
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.2 V ~ 5.5 V
  • RF Type: WCDMA
  • Package / Case: 12-UFQFN Exposed Pad
  • Supplier Device Package: ATSLP-12-4
パッケージ: 12-UFQFN Exposed Pad
在庫38,724
2.9GHz
25dB @ 2.5GHz (typ)
0.45dB @ 2.5GHz
-
-
SP5T
30dBm
-
50 Ohm
-30°C ~ 85°C
2.2 V ~ 5.5 V
WCDMA
12-UFQFN Exposed Pad
ATSLP-12-4
BGS13SN8E6327XTSA1
Infineon Technologies

RF SWITCH

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: 8-XFQFN
  • Supplier Device Package: PG-TSNP-8-1
パッケージ: 8-XFQFN
在庫156,864
-
-
-
-
-
-
-
-
-
-
-
-
8-XFQFN
PG-TSNP-8-1
BGSF 18DM20 E6327
Infineon Technologies

IC SWITCH SP8T HP SPI 20PIN

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: SP8T
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: Cellular, 3G, GSM
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫35,550
-
-
-
-
-
SP8T
-
-
-
-
-
Cellular, 3G, GSM
-
-
BGS 15AN16 E6327
Infineon Technologies

IC SWITCH WCDMA RF SP5T TSNP-16

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 27dB @ 2.69Hz
  • Insertion Loss @ Frequency: 0.65dB @ 2.69GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SP5T
  • P1dB: -
  • Features: DC Blocked
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: -
  • RF Type: W-CDMA
  • Package / Case: 16-XFQFN Exposed Pad
  • Supplier Device Package: PG-TSNP-16-3
パッケージ: 16-XFQFN Exposed Pad
在庫24,492
3GHz
27dB @ 2.69Hz
0.65dB @ 2.69GHz
-
Reflective
SP5T
-
DC Blocked
50 Ohm
-30°C ~ 85°C
-
W-CDMA
16-XFQFN Exposed Pad
PG-TSNP-16-3
BGS15GA14E6327XTSA1
Infineon Technologies

RF SWITCH

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 6GHz
  • Isolation @ Frequency: 27dB @ 6GHz (typ)
  • Insertion Loss @ Frequency: 0.65dB @ 6GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP5T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 3V
  • RF Type: -
  • Package / Case: 14-UFQFN Exposed Pad
  • Supplier Device Package: ATSLP-14-4
パッケージ: 14-UFQFN Exposed Pad
在庫34,536
6GHz
27dB @ 6GHz (typ)
0.65dB @ 6GHz
-
-
SP5T
-
-
50 Ohm
-30°C ~ 85°C
3V
-
14-UFQFN Exposed Pad
ATSLP-14-4
BGS12PL6E6327XTSA1
Infineon Technologies

IC SWITCH RF SPDT TSLP6-4

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 4GHz
  • Isolation @ Frequency: 22dB @ 3.8GHz (typ)
  • Insertion Loss @ Frequency: 0.77dB @ 3.8GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SPDT
  • P1dB: -
  • Features: Single Line Control
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: GSM, LTE, W-CDMA
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSLP-6-4
パッケージ: 6-XFDFN
在庫335,886
4GHz
22dB @ 3.8GHz (typ)
0.77dB @ 3.8GHz
-
Reflective
SPDT
-
Single Line Control
50 Ohm
-30°C ~ 85°C
2.4 V ~ 3.6 V
GSM, LTE, W-CDMA
6-XFDFN
TSLP-6-4
BGS 12AL7-6 E6327
Infineon Technologies

IC SWITCH RF SPDT TSLP7-6

  • Frequency - Lower: 30MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 25dB @ 2GHz (typ)
  • Insertion Loss @ Frequency: 0.5dB @ 2GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SPDT
  • P1dB: -
  • Features: DC Blocked, Single Line Control
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: General Purpose
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: TSLP-7-6
パッケージ: 6-XFDFN Exposed Pad
在庫60,534
3GHz
25dB @ 2GHz (typ)
0.5dB @ 2GHz
-
Reflective
SPDT
-
DC Blocked, Single Line Control
50 Ohm
-30°C ~ 85°C
2.4 V ~ 3.6 V
General Purpose
6-XFDFN Exposed Pad
TSLP-7-6
BGS12SN6E6327XTSA1
Infineon Technologies

IC SWITCH RF TSNP6

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 6GHz
  • Isolation @ Frequency: 21dB @ 6GHz (typ)
  • Insertion Loss @ Frequency: 0.65dB @ 6GHz
  • IIP3: -
  • Topology: -
  • Circuit: SPDT
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -40°C ~ 85°C
  • Voltage - Supply: 1.8 V ~ 3.5 V
  • RF Type: Bluetooth, WLAN
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSNP-6-2
パッケージ: 6-XFDFN
在庫145,866
6GHz
21dB @ 6GHz (typ)
0.65dB @ 6GHz
-
-
SPDT
-
-
50 Ohm
-40°C ~ 85°C
1.8 V ~ 3.5 V
Bluetooth, WLAN
6-XFDFN
TSNP-6-2