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レコード 62,144
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パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MTFC64GJDDN-4M IT
Micron Technology Inc.

IC FLASH 512GBIT 169LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 169-LFBGA
  • Supplier Device Package: 169-LFBGA (14x18)
パッケージ: 169-LFBGA
在庫7,520
FLASH
FLASH - NAND
512Kb (64K x 8)
MMC
-
-
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
169-LFBGA
169-LFBGA (14x18)
IS42S16100E-6BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (6.4x10.1)
パッケージ: 60-TFBGA
在庫2,320
DRAM
SDRAM
16Mb (1M x 16)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (6.4x10.1)
IS41C16105C-50TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫5,120
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
CY7C1315TV18-167BZC
Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
パッケージ: 165-LBGA
在庫7,456
SRAM
SRAM - Synchronous, QDR II
18Mb (512K x 36)
Parallel
167MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
STK14D88-RF25TR
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 25NS 48SSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
パッケージ: 48-BSSOP (0.295", 7.50mm Width)
在庫6,512
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-BSSOP (0.295", 7.50mm Width)
48-SSOP
JS28F320J3D75D TR
Micron Technology Inc.

IC FLASH 32MBIT 75NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 75ns
  • Access Time: 75ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
パッケージ: 56-TFSOP (0.724", 18.40mm Width)
在庫4,752
FLASH
FLASH - NOR
32Mb (4M x 8, 2M x 16)
Parallel
-
75ns
75ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
CY7C1006D-10VXIT
Cypress Semiconductor Corp

IC SRAM 1MBIT 10NS 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (256K x 4)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
パッケージ: 28-BSOJ (0.300", 7.62mm Width)
在庫2,480
SRAM
SRAM - Asynchronous
1Mb (256K x 4)
Parallel
-
10ns
10ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
7024S55FB
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 55NS 84FLATPAK

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-FlatPack
  • Supplier Device Package: 84-FLATPAK
パッケージ: 84-FlatPack
在庫7,472
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Surface Mount
84-FlatPack
84-FLATPAK
70V07S55J
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
パッケージ: 68-LCC (J-Lead)
在庫2,048
SRAM
SRAM - Dual Port, Asynchronous
256Kb (32K x 8)
Parallel
-
55ns
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
EDBA164B2PF-1D-F-D
Micron Technology Inc.

IC SDRAM 16GBIT 533MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 16Gb (256M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,304
DRAM
SDRAM - Mobile LPDDR2
16Gb (256M x 64)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
Surface Mount
-
-
IS45S32200L-6TLA2-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
パッケージ: 86-TFSOP (0.400", 10.16mm Width)
在庫2,000
DRAM
SDRAM
64Mb (2M x 32)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
AS4C128M8D3LA-12BCN
Alliance Memory, Inc.

IC SDRAM 1GBIT 800MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-FBGA (10.5x8)
パッケージ: 78-VFBGA
在庫6,656
DRAM
SDRAM - DDR3L
1Gb (128M x 8)
Parallel
800MHz
15ns
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-FBGA (10.5x8)
AS7C34096A-10JCNTR
Alliance Memory, Inc.

IC SRAM 4MBIT 10NS 36SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ
パッケージ: 36-BSOJ (0.400", 10.16mm Width)
在庫2,432
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
RM24C128DS-LMAI-T
Adesto Technologies

IC EEPROM 8-DFN 1.65V I2C 128B O

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128kb (64B Page Size)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 100µs, 5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
パッケージ: 8-UFDFN Exposed Pad
在庫7,808
EEPROM
EEPROM
128kb (64B Page Size)
I2C
1MHz
100µs, 5ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
25AA160-I/SN
Microchip Technology

IC EEPROM 16KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫5,088
EEPROM
EEPROM
16Kb (2K x 8)
SPI
1MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot JS28F256P30TFE
Micron Technology Inc.

IC FLASH 256MBIT 110NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
パッケージ: 56-TFSOP (0.724", 18.40mm Width)
在庫98,148
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
40MHz
110ns
110ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
IS43LD16640C-25BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-TFBGA
  • Supplier Device Package: 134-TFBGA (10x11.5)
パッケージ: 134-TFBGA
在庫19,086
DRAM
SDRAM - Mobile LPDDR2-S4
1Gb (64M x 16)
Parallel
400MHz
15ns
-
1.14 V ~ 1.95 V
-40°C ~ 85°C (TC)
Surface Mount
134-TFBGA
134-TFBGA (10x11.5)
hot W948D6FBHX6E
Winbond Electronics

IC SDRAM 256MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-VFBGA (8x9)
パッケージ: 60-TFBGA
在庫13,128
DRAM
SDRAM - Mobile LPDDR
256Mb (16M x 16)
Parallel
166MHz
15ns
5ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-VFBGA (8x9)
MT29F128G08CBCBBH6-6R:B
Micron Technology Inc.

IC FLASH 128G PARALLEL 166MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,696
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MTFC8GACAENS-AAT TR
Micron Technology Inc.

IC FLASH 64G MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-TFBGA (11.5x13)
パッケージ: 153-TFBGA
在庫14,826
FLASH
FLASH - NAND
64Gb (8G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
FM24C03UEM8X
Fairchild Semiconductor

IC EEPROM 2KBIT I2C 100KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kbit
  • Memory Interface: I2C
  • Clock Frequency: 100 kHz
  • Write Cycle Time - Word, Page: 15ms
  • Access Time: 3.5 µs
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: -
Request a Quote
EEPROM
EEPROM
2Kbit
I2C
100 kHz
15ms
3.5 µs
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
70V07L15JI
Renesas Electronics Corporation

IC RAM DUAL PORT

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
パッケージ: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
256Kbit
Parallel
-
15ns
15 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
GD25LE128ESIGR
GigaDevice Semiconductor (HK) Limited

128MBIT, 1.8V, SOP8 208MIL, INDU

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 60µs, 2.4ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: -
在庫4,545
FLASH
FLASH - NOR (SLC)
128Mbit
SPI - Quad I/O, QPI
133 MHz
60µs, 2.4ms
6 ns
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP
MR4A16BUYS45R
Everspin Technologies Inc.

IC RAM 16MBIT PARALLEL 54TSOP2

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP2
パッケージ: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
16Mbit
Parallel
-
45ns
45 ns
3V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP2
GD25Q20CEIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 2MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 120 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
パッケージ: -
在庫24,525
FLASH
FLASH - NOR
2Mbit
SPI - Quad I/O
120 MHz
50µs, 2.4ms
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-XFDFN Exposed Pad
8-USON (2x3)
IS25LP080D-JVLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT SPI/QUAD 8VVSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-VVSOP
パッケージ: -
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FLASH
FLASH - NOR
8Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
800µs
-
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-VVSOP
24FC512T-I-OT
Microchip Technology

IC EEPROM 512KBIT I2C SOT23-5

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
パッケージ: -
在庫48,957
EEPROM
EEPROM
512Kbit
I2C
1 MHz
5ms
900 ns
1.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
SC-74A, SOT-753
SOT-23-5
BR24G32F-5E2
Rohm Semiconductor

32KBIT, IC BUS, HIGH ENDURANCE,

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: -
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EEPROM
EEPROM
32Kbit
I2C
1 MHz
5ms
-
1.6V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP