ページ 2032 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CY7C1447AV25-133BGI	Cypress Semiconductor Corp	IC SRAM 36MBIT 133MHZ 209FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (512K x 72) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 209-BGA Supplier Device Package: 209-FBGA (14x22)	パッケージ: 209-BGA	在庫3,040	SRAM	SRAM - Synchronous	36Mb (512K x 72)	Parallel	133MHz	-	6.5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	209-BGA	209-FBGA (14x22)
MT41J128M8JP-107:G	Micron Technology Inc.	IC SDRAM 1GBIT 933MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x11.5)	パッケージ: 78-TFBGA	在庫7,376	DRAM	SDRAM - DDR3	1Gb (128M x 8)	Parallel	933MHz	-	-	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x11.5)
STK11C88-NF45I	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 45NS 28SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	パッケージ: 28-SOIC (0.295", 7.50mm Width)	在庫4,752	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
IDT71V416S12YI	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 12NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	パッケージ: 44-BSOJ (0.400", 10.16mm Width)	在庫4,864	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
AT49BV6416T-70TI	Microchip Technology	IC FLASH 64MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫4,240	FLASH	FLASH	64Mb (4M x 16)	Parallel	-	15µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AT93C46Y1-10YI-2.7	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8MAP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8 , 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-MAP (3x4.9)	パッケージ: 8-UDFN Exposed Pad	在庫3,024	EEPROM	EEPROM	1Kb (128 x 8 , 64 x 16)	SPI	2MHz	10ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-MAP (3x4.9)
AT49F040-12JI	Microchip Technology	IC FLASH 4MBIT 120NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	パッケージ: 32-LCC (J-Lead)	在庫5,840	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	50µs	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT27LV520-90SI	Microchip Technology	IC OTP 512KBIT 90NS 20SOIC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	パッケージ: 20-SOIC (0.295", 7.50mm Width)	在庫6,976	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	90ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SOIC
AT27C1024-12PI	Microchip Technology	IC OTP 1MBIT 120NS 40DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 40-DIP (0.600", 15.24mm) Supplier Device Package: 40-PDIP	パッケージ: 40-DIP (0.600", 15.24mm)	在庫4,896	EPROM	EPROM - OTP	1Mb (64K x 16)	Parallel	-	-	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	40-DIP (0.600", 15.24mm)	40-PDIP
AT25256-10PC-2.7	Microchip Technology	IC EEPROM 256KBIT 3MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫4,944	EEPROM	EEPROM	256Kb (32K x 8)	SPI	3MHz	5ms	-	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
70V7519S133DRI	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	パッケージ: 208-BFQFP	在庫3,936	SRAM	SRAM - Dual Port, Synchronous	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V631S10BC8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 10NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	パッケージ: 256-LBGA	在庫6,496	SRAM	SRAM - Dual Port, Asynchronous	4.5Mb (256K x 18)	Parallel	-	10ns	10ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
70V24S25J	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 25NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	パッケージ: 84-LCC (J-Lead)	在庫7,472	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
71V30L25TF8	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 25NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	パッケージ: 64-LQFP	在庫4,352	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
71V3576S150PFG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: 100-LQFP	在庫2,912	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
BR24G64F-3AGTE2	Rohm Semiconductor	IC EEPROM 64KBIT 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.173", 4.40mm Width)	在庫3,504	EEPROM	EEPROM	64Kb (8K x 8)	I2C	1MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
BR24T32FVM-WTR	Rohm Semiconductor	IC EEPROM 32KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-MSOP	パッケージ: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)	在庫239,928	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VSSOP, 8-MSOP (0.110", 2.80mm Width)	8-MSOP
M24512-RDW6TP	STMicroelectronics	IC EEPROM 512KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 500ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫121,728	EEPROM	EEPROM	512Kb (64K x 8)	I2C	1MHz	5ms	500ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT25QU128ABB1EW7-CSIT TR	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 8WPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPDFN (6x5)(MLP8)	パッケージ: 8-WDFN Exposed Pad	在庫4,272	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
MT53B128M32D1Z00NWC2 AT	Micron Technology Inc.	IC DRAM LPDDR4 8GB FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,456	-	-	-	-	-	-	-	-	-	-	-	-
NDB16PFC-4DET-TR	Insignis Technology Corporation	NDB16PFC-4DET: DDR2 1GB X16 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gbit Memory Interface: SSTL_18 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR2	1Gbit	SSTL_18	400 MHz	-	-	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
CY15B104QI-20LPXCT	Infineon Technologies	IC FRAM 4MBIT SPI 20MHZ 8GQFN Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Mbit Memory Interface: SPI Clock Frequency: 20 MHz Write Cycle Time - Word, Page: - Access Time: 20 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-UQFN Supplier Device Package: 8-GQFN (3.23x3.28)	パッケージ: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	4Mbit	SPI	20 MHz	-	20 ns	1.8V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	8-UQFN	8-GQFN (3.23x3.28)
CY7C1370BV25-167BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT PAR 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 167 MHz Write Cycle Time - Word, Page: - Access Time: 3.4 ns Voltage - Supply: 2.375V ~ 2.625V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	18Mbit	Parallel	167 MHz	-	3.4 ns	2.375V ~ 2.625V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IS25LP020E-JNLA3	ISSI, Integrated Silicon Solution Inc	2MB QSPI, 8-PIN SOP 150MIL, ROHS Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 2Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 40µs, 1.2ms Access Time: 8 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	2Mbit	SPI - Quad I/O, QPI	104 MHz	40µs, 1.2ms	8 ns	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
KM68V1002CJ-15	Samsung	SRAM ASYNC FAST 1M 128Kx8 3.3V 3 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 3.3V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 32-SOJ	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	1Mbit	Parallel	-	15ns	-	3.3V	0°C ~ 70°C (TA)	Surface Mount	-	32-SOJ
IS43TR81024BL-125KBL-TR	ISSI, Integrated Silicon Solution Inc	8G, 1.35V, DDR3L, 1Gx8, 1600MT/s Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (10x14)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	8Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (10x14)
PC28F640P30BF65B	Alliance Memory, Inc.	IC FLASH 64MBIT PAR 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: Parallel Clock Frequency: 52 MHz Write Cycle Time - Word, Page: 65ns Access Time: 65 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	パッケージ: -	在庫4,755	FLASH	FLASH - NOR	64Mbit	Parallel	52 MHz	65ns	65 ns	1.7V ~ 2V	-40°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
W632GU6QB-12	Winbond Electronics	2GB DDR3L 1.35V SDRAM, X16, 800M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)

CY7C1447AV25-133BGI

Cypress Semiconductor Corp

IC SRAM 36MBIT 133MHZ 209FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (512K x 72)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 209-BGA
Supplier Device Package: 209-FBGA (14x22)

パッケージ: 209-BGA

在庫3,040

SRAM

SRAM - Synchronous

36Mb (512K x 72)

Parallel

133MHz

-

6.5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

209-BGA

209-FBGA (14x22)

MT41J128M8JP-107:G

Micron Technology Inc.

IC SDRAM 1GBIT 933MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x11.5)

パッケージ: 78-TFBGA

在庫7,376

DRAM

SDRAM - DDR3

1Gb (128M x 8)

Parallel

933MHz

-

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x11.5)

STK11C88-NF45I

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 28SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

パッケージ: 28-SOIC (0.295", 7.50mm Width)

在庫4,752

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

IDT71V416S12YI

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

パッケージ: 44-BSOJ (0.400", 10.16mm Width)

在庫4,864

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

AT49BV6416T-70TI

Microchip Technology

IC FLASH 64MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫4,240

FLASH

64Mb (4M x 16)

Parallel

-

15µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AT93C46Y1-10YI-2.7

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8MAP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8 , 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-MAP (3x4.9)

パッケージ: 8-UDFN Exposed Pad

在庫3,024

EEPROM

1Kb (128 x 8 , 64 x 16)

SPI

2MHz

10ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-MAP (3x4.9)

AT49F040-12JI

Microchip Technology

IC FLASH 4MBIT 120NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

パッケージ: 32-LCC (J-Lead)

在庫5,840

FLASH

4Mb (512K x 8)

Parallel

-

50µs

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT27LV520-90SI

Microchip Technology

IC OTP 512KBIT 90NS 20SOIC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

パッケージ: 20-SOIC (0.295", 7.50mm Width)

在庫6,976

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

90ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SOIC

AT27C1024-12PI

Microchip Technology

IC OTP 1MBIT 120NS 40DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Supplier Device Package: 40-PDIP

パッケージ: 40-DIP (0.600", 15.24mm)

在庫4,896

EPROM

EPROM - OTP

1Mb (64K x 16)

Parallel

-

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

40-DIP (0.600", 15.24mm)

40-PDIP

AT25256-10PC-2.7

Microchip Technology

IC EEPROM 256KBIT 3MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫4,944

EEPROM

256Kb (32K x 8)

SPI

3MHz

5ms

-

2.7 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

70V7519S133DRI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

パッケージ: 208-BFQFP

在庫3,936

SRAM

SRAM - Dual Port, Synchronous

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V631S10BC8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 10NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

パッケージ: 256-LBGA

在庫6,496

SRAM

SRAM - Dual Port, Asynchronous

4.5Mb (256K x 18)

Parallel

-

10ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

70V24S25J

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 25NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

パッケージ: 84-LCC (J-Lead)

在庫7,472

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

71V30L25TF8

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 25NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

パッケージ: 64-LQFP

在庫4,352

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

71V3576S150PFG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: 100-LQFP

在庫2,912

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

BR24G64F-3AGTE2

Rohm Semiconductor

IC EEPROM 64KBIT 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.173", 4.40mm Width)

在庫3,504

EEPROM

64Kb (8K x 8)

I2C

1MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

BR24T32FVM-WTR

Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-MSOP

パッケージ: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

在庫239,928

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

8-MSOP

M24512-RDW6TP

STMicroelectronics

IC EEPROM 512KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 500ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫121,728

EEPROM

512Kb (64K x 8)

I2C

1MHz

5ms

500ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT25QU128ABB1EW7-CSIT TR

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPDFN (6x5)(MLP8)

パッケージ: 8-WDFN Exposed Pad

在庫4,272

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WPDFN (6x5)(MLP8)

MT53B128M32D1Z00NWC2 AT

Micron Technology Inc.

IC DRAM LPDDR4 8GB FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,456

-

NDB16PFC-4DET-TR

Insignis Technology Corporation

NDB16PFC-4DET: DDR2 1GB X16 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gbit
Memory Interface: SSTL_18
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR2

1Gbit

SSTL_18

400 MHz

-

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

CY15B104QI-20LPXCT

Infineon Technologies

IC FRAM 4MBIT SPI 20MHZ 8GQFN

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Mbit
Memory Interface: SPI
Clock Frequency: 20 MHz
Write Cycle Time - Word, Page: -
Access Time: 20 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Supplier Device Package: 8-GQFN (3.23x3.28)

パッケージ: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

4Mbit

SPI

20 MHz

-

20 ns

1.8V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

8-UQFN

8-GQFN (3.23x3.28)

CY7C1370BV25-167BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT PAR 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 167 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4 ns
Voltage - Supply: 2.375V ~ 2.625V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

18Mbit

Parallel

167 MHz

-

3.4 ns

2.375V ~ 2.625V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IS25LP020E-JNLA3

ISSI, Integrated Silicon Solution Inc

2MB QSPI, 8-PIN SOP 150MIL, ROHS

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 40µs, 1.2ms
Access Time: 8 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

2Mbit

SPI - Quad I/O, QPI

104 MHz

40µs, 1.2ms

8 ns

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

KM68V1002CJ-15

Samsung

SRAM ASYNC FAST 1M 128Kx8 3.3V 3

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 32-SOJ

パッケージ: -

Request a Quote

SRAM

SRAM - Asynchronous

1Mbit

Parallel

-

15ns

-

3.3V

0°C ~ 70°C (TA)

Surface Mount

-

32-SOJ

IS43TR81024BL-125KBL-TR

ISSI, Integrated Silicon Solution Inc

8G, 1.35V, DDR3L, 1Gx8, 1600MT/s

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (10x14)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR3L

8Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (10x14)

PC28F640P30BF65B

Alliance Memory, Inc.

IC FLASH 64MBIT PAR 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: Parallel
Clock Frequency: 52 MHz
Write Cycle Time - Word, Page: 65ns
Access Time: 65 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

パッケージ: -

在庫4,755

FLASH

FLASH - NOR

64Mbit

Parallel

52 MHz

65ns

65 ns

1.7V ~ 2V

-40°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (10x13)

W632GU6QB-12

Winbond Electronics

2GB DDR3L 1.35V SDRAM, X16, 800M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR3L

2Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)