Toshiba Semiconductor and Storage 製品 - トランジスタ - バイポーラ(BJT) - アレイ | Heisener Electronics
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Toshiba Semiconductor and Storage 製品 - トランジスタ - バイポーラ(BJT) - アレイ

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在庫
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
HN4B01JE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ESV PLN

  • Transistor Type: NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
パッケージ: SOT-553
在庫5,712
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 10MA, 100MA
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-553
ESV
HN1B04FU-Y(T5L,F,T
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫7,728
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
150MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
HN1C01FU-Y(T5L,F,T
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫6,128
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
hot HN1B01FU-Y(L,F,T)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫533,208
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
120MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
2SC4207-BL(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SMV

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
パッケージ: SC-74A, SOT-753
在庫25,308
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
350 @ 2mA, 6V
300mW
80MHz
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
HN1A01F-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A SM6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
パッケージ: SC-74, SOT-457
在庫28,278
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
300mW
80MHz
125°C (TJ)
Surface Mount
SC-74, SOT-457
SM6
HN4C51J(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN 120V 0.1A SMV

  • Transistor Type: 2 NPN (Dual) Common Base
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
パッケージ: SC-74A, SOT-753
在庫7,856
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
300mW
100MHz
150°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
HN1C03F-B(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN 20V 0.3A SM6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
パッケージ: SC-74, SOT-457
在庫6,144
300mA
20V
100mV @ 3mA, 30mA
100nA (ICBO)
350 @ 4mA, 2V
300mW
30MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
SM6
2SC4207-GR(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SMV

  • Transistor Type: 2 NPN (Dual) Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
パッケージ: SC-74A, SOT-753
在庫6,384
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
300mW
80MHz
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
HN2C01FEYTE85LF
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
パッケージ: SOT-563, SOT-666
在庫7,040
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
60MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN1B04FE-GR,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
パッケージ: SOT-563, SOT-666
在庫7,088
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN1A01FU-Y,LF
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A US6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫6,352
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
HN4A51JTE85LF
Toshiba Semiconductor and Storage

TRANS 2PNP 120V 0.1A SMV

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
パッケージ: SC-74A, SOT-753
在庫50,916
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
300mW
100MHz
150°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
HN1C03FU-A(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2NPN 20V 0.3A US6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫28,836
300mA
20V
100mV @ 3mA, 30mA
100nA (ICBO)
200 @ 4mA, 2V
200mW
30MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
HN2C01FU-Y(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫26,742
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
HN4B04J(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 30V 0.5A SMV

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
パッケージ: SC-74A, SOT-753
在庫24,708
500mA
30V
250mV @ 10mA, 100mA
100µA (ICBO)
70 @ 100mA, 1V
300mW
200MHz
150°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
2SC4944-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A USV

  • Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
パッケージ: 5-TSSOP, SC-70-5, SOT-353
在庫25,026
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
2SA1873-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A USV

  • Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
パッケージ: 5-TSSOP, SC-70-5, SOT-353
在庫23,976
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
2SA1618-GR(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A SMV

  • Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
パッケージ: SC-74A, SOT-753
在庫29,706
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
300mW
80MHz
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
2SC4207-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SMV

  • Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
パッケージ: SC-74A, SOT-753
在庫43,188
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
300mW
80MHz
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
HN1C01FYTE85LF
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SM6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
パッケージ: SC-74, SOT-457
在庫25,956
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
300mW
80MHz
125°C (TJ)
Surface Mount
SC-74, SOT-457
SM6
2SA1873-GR(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A USV

  • Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
パッケージ: 5-TSSOP, SC-70-5, SOT-353
在庫46,734
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
HN2C01FU-GR(T5L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫28,278
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
HN2A01FU-Y(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A US6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫28,752
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
HN4C06J-BL(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2 NPN 120V 100MA SC74A

  • Transistor Type: 2 NPN (Dual) Common Emitter
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
パッケージ: SC-74A, SOT-753
在庫23,004
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
300mW
100MHz
150°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
HN4A56JU(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2 PNP 50V 150MA 5TSSOP

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
パッケージ: 5-TSSOP, SC-70-5, SOT-353
在庫43,644
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
60MHz
150°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
HN1C01FE-GR,LF
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
パッケージ: SOT-563, SOT-666
在庫28,986
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN1C01FE-Y,LF
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
パッケージ: SOT-563, SOT-666
在庫35,664
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN1A01FE-Y,LF
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
パッケージ: SOT-563, SOT-666
在庫70,218
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN1B04FE-Y,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
パッケージ: SOT-563, SOT-666
在庫34,614
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6