Vishay Semiconductor Diodes Division 製品 - トランジスタ - バイポーラ（BJT） - シングル

画像	部品番号	メーカ	説明	パッケージ	在庫	数量	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	MPSA42PH	Vishay Semiconductor Diodes Division	TRANS NPN 300V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫5,680		500mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	625mW	50MHz	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
	2N3904PH	Vishay Semiconductor Diodes Division	TRANS NPN 40V 0.2A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫5,936		200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	625mW	300MHz	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92