Vishay Semiconductor Diodes Division 製品 - トランジスタ - FET、MOSFET - アレイ | Heisener Electronics
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Vishay Semiconductor Diodes Division 製品 - トランジスタ - FET、MOSFET - アレイ

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部品番号
メーカ
説明
パッケージ
在庫
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
19MT050XF
Vishay Semiconductor Diodes Division

MOSFET 4N-CH 500V 31A MTP

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 31A
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 25V
  • Power - Max: 1140W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 16-MTP Module
  • Supplier Device Package: 16-MTP
パッケージ: 16-MTP Module
在庫3,296
Standard
500V
31A
220 mOhm @ 19A, 10V
6V @ 250µA
160nC @ 10V
7210pF @ 25V
1140W
-40°C ~ 150°C (TJ)
Chassis Mount
16-MTP Module
16-MTP