|
|
Vishay Siliconix |
MOSFET N-CH 30V 85A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 166W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
パッケージ: TO-220-3 |
在庫60,516 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 8.6A 8TSSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.08W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
|
パッケージ: 8-TSSOP (0.173", 4.40mm Width) |
在庫4,592 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 12V 4.5A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
パッケージ: SOT-23-6 Thin, TSOT-23-6 |
在庫2,186,064 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V 85A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA |
在庫2,912 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫7,888 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 36A SUPER247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5579pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-247 (TO-274AA)
- Package / Case: TO-274AA
|
パッケージ: TO-274AA |
在庫107,844 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 1.7A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫6,688 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 1.7A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫6,368 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 50A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6715pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫7,136 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 50A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6060pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫4,784 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 6.3A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
パッケージ: SOT-23-6 Thin, TSOT-23-6 |
在庫461,832 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
パッケージ: TO-220-3 |
在庫17,076 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 38A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫12,192 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 40V 2.3A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 82 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫686,676 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 1.8A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
パッケージ: PowerPAK? SO-8 |
在庫52,650 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 1.7A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
|
パッケージ: PowerPAK? 1212-8 |
在庫52,440 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 20A 1212-8 PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
|
パッケージ: PowerPAK? 1212-8 |
在庫25,776 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 12V 16A MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-Micro Foot?
- Package / Case: 6-UFBGA
|
パッケージ: 6-UFBGA |
在庫75,816 |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 60V 3.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.7A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫1,401,312 |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 20V 4.3A 1212-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
|
パッケージ: PowerPAK? 1212-8 Dual |
在庫110,400 |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 12V 4A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
パッケージ: 8-TSSOP (0.173", 4.40mm Width) |
在庫10,980 |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 3.1A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.1A
- Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
パッケージ: 8-TSSOP (0.173", 4.40mm Width) |
在庫136,824 |
|
|
|
Vishay Siliconix |
MOSFET
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 20pC
- Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: FlatPack
- Supplier Device Package: 16-Flatpack
|
パッケージ: FlatPack |
在庫4,160 |
|
|
|
Vishay Siliconix |
IC SWITCH QUAD SPST 16-SOIC
- Switch Circuit: SPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 35 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 105ns, 80ns
- -3db Bandwidth: -
- Charge Injection: 22pC
- Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -88dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
パッケージ: 16-SOIC (0.154", 3.90mm Width) |
在庫5,904 |
|
|
|
Vishay Siliconix |
IC SWITCH CMOS 14DIP
- Switch Circuit: DPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 50 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 300ns, 250ns
- -3db Bandwidth: -
- Charge Injection: 8pC
- Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -74dB @ 500kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-PDIP
|
パッケージ: 14-DIP (0.300", 7.62mm) |
在庫4,064 |
|
|
|
Vishay Siliconix |
IC SWITCH QUAD SPST 16CDIP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 175 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 600ns, 450ns
- -3db Bandwidth: -
- Charge Injection: 20pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -90dB @ 100kHz
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CERDIP
|
パッケージ: 16-CDIP (0.300", 7.62mm) |
在庫29,508 |
|
|
|
Vishay Siliconix |
IC SWITCH QUAD SPST 16-TSSOP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 1.8 Ohm
- Channel-to-Channel Matching (ΔRon): 80 mOhm
- Voltage - Supply, Single (V+): 4.5 V ~ 24 V
- Voltage - Supply, Dual (V±): ±4.5 V ~ 15 V
- Switch Time (Ton, Toff) (Max): 150ns, 120ns
- -3db Bandwidth: 210MHz
- Charge Injection: -20pC
- Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
- Current - Leakage (IS(off)) (Max): 550pA
- Crosstalk: -100dB @ 1MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
|
パッケージ: 16-TSSOP (0.173", 4.40mm Width) |
在庫2,112 |
|
|
|
Vishay Siliconix |
IC SWITCH QUAD SPST 16SOIC
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 85 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm
- Voltage - Supply, Single (V+): 4.5 V ~ 25 V
- Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 300ns, 200ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
パッケージ: 16-SOIC (0.154", 3.90mm Width) |
在庫5,072 |
|
|
|
Vishay Siliconix |
IC MULTIPLEXER 16MINIQFN
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 101 Ohm
- Channel-to-Channel Matching (ΔRon): 5 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 16 V
- Voltage - Supply, Dual (V±): ±3 V ~ 8 V
- Switch Time (Ton, Toff) (Max): 54ns, 52ns
- -3db Bandwidth: 414MHz
- Charge Injection: -0.3pC
- Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -65dB @ 10MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-UFQFN
- Supplier Device Package: 16-miniQFN (1.8x2.6)
|
パッケージ: 16-UFQFN |
在庫7,120 |
|
|
|
Vishay Siliconix |
60A VRPOWERSMART POWER STAGE(SPS
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters, Voltage Regulators
- Interface: PWM
- Load Type: Inductive
- Technology: NMOS
- Rds On (Typ): 0.76 mOhm LS, 3.6 mOhm HS
- Current - Output / Channel: -
- Current - Peak Output: -
- Voltage - Supply: 4.75 ~ 5.25 V
- Voltage - Load: 4.5 V ~ 18 V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Features: Bootstrap Circuit, Status Flag
- Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 32-PowerWFQFN, Module
- Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
|
パッケージ: 32-PowerWFQFN, Module |
在庫3,936 |
|