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Diodes Incorporated 製品

レコード 22,098
ページ  295/790
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FK7770001
Diodes Incorporated

OSCILLATOR XO 77.76MHZ CMOS SMD

  • Type: XO (Standard)
  • Frequency: 77.76MHz
  • Function: Enable/Disable
  • Output: CMOS
  • Voltage - Supply: 3.3V
  • Frequency Stability: ±50ppm
  • Operating Temperature: -20°C ~ 70°C
  • Current - Supply (Max): 18mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
  • Height - Seated (Max): 0.045" (1.15mm)
パッケージ: 4-SMD, No Lead
在庫2,430
hot LMN200B02-7
Diodes Incorporated

MCU LOAD SWITCH 200MA SOT-363

  • Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased
  • Applications: Load Switch
  • Voltage - Rated: 50V PNP, 60V N-Channel
  • Current Rating: 200mA PNP, 115mA N-Channel
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫48,348
ZVP2106ASTOA
Diodes Incorporated

MOSFET P-CH 60V 0.28A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: E-Line (TO-92 compatible)
  • Package / Case: E-Line-3
パッケージ: E-Line-3
在庫5,440
DMNH6042SSDQ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫5,472
ZTX712STOA
Diodes Incorporated

TRANS PNP DARL 60V 0.8A E-LINE

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
パッケージ: E-Line-3, Formed Leads
在庫5,392
ZUMT2369ATA
Diodes Incorporated

TRANSISTOR NPN 15V 200MA SC70-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: SC-70, SOT-323
在庫3,376
DSS60600MZ4-13
Diodes Incorporated

TRANS PNP 60V 6A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
  • Power - Max: 1.2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: TO-261-4, TO-261AA
在庫170,256
DDTA115GKA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫4,544
DDTC123TUA-7
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: SC-70, SOT-323
在庫29,064
MMSZ5236BS-7
Diodes Incorporated

DIODE ZENER 7.5V 200MW SOD323

  • Voltage - Zener (Nom) (Vz): 7.5V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 6 Ohms
  • Current - Reverse Leakage @ Vr: 3µA @ 6V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
パッケージ: SC-76, SOD-323
在庫2,672
hot DDZ9709-7
Diodes Incorporated

DIODE ZENER 24V 500MW SOD123

  • Voltage - Zener (Nom) (Vz): 24V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): -
  • Current - Reverse Leakage @ Vr: 50nA @ 18.2V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
パッケージ: SOD-123
在庫432,000
AZ23C47-7
Diodes Incorporated

DIODE ZENER ARRAY 47V SOT23-3

  • Configuration: 1 Pair Common Anode
  • Voltage - Zener (Nom) (Vz): 47V
  • Tolerance: ±5%
  • Power - Max: 300mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫5,472
LLSD101C-13
Diodes Incorporated

DIODE SCHOTTKY 40V 15MA MINIMELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 15mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 30V
  • Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: Mini MELF
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: DO-213AA
在庫7,872
SBRT20U60SP5-7D
Diodes Incorporated

DIODE SBR 60V 20A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 180µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: PowerDI? 5
在庫7,952
DFLS2100Q-7
Diodes Incorporated

DIODE SCHOTTKY 100V POWERDI123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 36pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: POWERDI?123
在庫54,618
SBRT40V100CTE
Diodes Incorporated

DIODE SBR TO262

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 730mV @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 100V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Full Pack, I2Pak
  • Supplier Device Package: TO-262
パッケージ: TO-262-3 Full Pack, I2Pak
在庫5,296
hot AP7335-SNG-7
Diodes Incorporated

IC REG LIN POS ADJ 300MA 6DFN

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 5V
  • Voltage Dropout (Max): 0.2V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 80µA
  • PSRR: 65dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-DFN2020 (2x2)
パッケージ: 6-UDFN Exposed Pad
在庫72,000
hot AP431QG-7
Diodes Incorporated

IC VREF SHUNT ADJ SOT25

  • Reference Type: Shunt
  • Output Type: Adjustable
  • Voltage - Output (Min/Fixed): 2.495V
  • Voltage - Output (Max): 36V
  • Current - Output: 200mA
  • Tolerance: ±1%
  • Temperature Coefficient: 30ppm/°C
  • Noise - 0.1Hz to 10Hz: -
  • Noise - 10Hz to 10kHz: -
  • Voltage - Input: -
  • Current - Supply: -
  • Current - Cathode: 500µA
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-25
パッケージ: SC-74A, SOT-753
在庫113,160
AP9214LA-AK-HSB-7
Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

  • Function: Battery Protection
  • Battery Chemistry: Lithium-Ion/Polymer
  • Number of Cells: 1
  • Fault Protection: Over Current, Over Voltage, Short Circuit
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2535-6
パッケージ: 6-UDFN Exposed Pad
在庫7,632
PI74FCT162245CTAE
Diodes Incorporated

IC TRANSCVR DUAL N-INV 48TSSOP

  • Logic Type: Transceiver, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width)
  • Supplier Device Package: 48-TSSOP
パッケージ: 48-TFSOP (0.240", 6.10mm Width)
在庫5,408
PI4ULS5V106ZHDEX
Diodes Incorporated

INTERFACE ULS U-QFN3030-16

  • Translator Type: Voltage Level
  • Channel Type: Bidirectional
  • Number of Circuits: 1
  • Channels per Circuit: 6
  • Voltage - VCCA: 0.95V ~ 3.3V
  • Voltage - VCCB: 1.8V ~ 5V
  • Input Signal: -
  • Output Signal: -
  • Output Type: Tri-State, Non-Inverted
  • Data Rate: 100MHz
  • Operating Temperature: -40°C ~ 85°C
  • Features: -
  • Mounting Type: Surface Mount
  • Package / Case: 16-UFQFN Exposed Pad
  • Supplier Device Package: 16-UQFN (3x3)
パッケージ: 16-UFQFN Exposed Pad
在庫2,784
74AHC1G126QSE-7
Diodes Incorporated

IC BUFFER NON-INVERT 5.5V SOT353

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SOT-353
パッケージ: -
在庫16,710
AP7361E-28FGE-7
Diodes Incorporated

LDO CMOS HICURR U-DFN3030-8 T&R

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): 91 µA
  • Current - Supply (Max): -
  • PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
  • Control Features: Enable, Power Good
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: U-DFN3030-8 (Type E)
パッケージ: -
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DMN21D1UDA-7B
Diodes Incorporated

MOSFET 2N-CH 20V 0.455A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
  • Power - Max: 310mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
パッケージ: -
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DMT15H053SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta), 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
パッケージ: -
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DMN3060LW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
パッケージ: -
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DMC2991UDA-7B
Diodes Incorporated

MOSFET N/P-CH 20V 0.48A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
パッケージ: -
在庫29,592
DMT12H065LFDF-13
Diodes Incorporated

MOSFET N-CH 115V 4.3A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 115 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
パッケージ: -
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