Infineon Technologies 製品

SKW15N120FKSA1

Infineon Technologies

IGBT 1200V 30A 198W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
• Power - Max: 198W
• Switching Energy: 1.9mJ
• Input Type: Standard
• Gate Charge: 130nC
• Td (on/off) @ 25°C: 18ns/580ns
• Test Condition: 800V, 15A, 33 Ohm, 15V
• Reverse Recovery Time (trr): 65ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

IRG4BC30KD-STRR

Infineon Technologies

IGBT 600V 28A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 58A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
• Power - Max: 100W
• Switching Energy: 600µJ (on), 580µJ (off)
• Input Type: Standard
• Gate Charge: 67nC
• Td (on/off) @ 25°C: 60ns/160ns
• Test Condition: 480V, 16A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRLR3105

Infineon Technologies

MOSFET N-CH 55V 25A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 37 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-PAK (TO-252AA)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF3711ZCLPBF

Infineon Technologies

MOSFET N-CH 20V 92A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

IRLR7833TR

Infineon Technologies

MOSFET N-CH 30V 140A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IPW50R399CPFKSA1

Infineon Technologies

MOSFET N-CH 560V 9A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 330µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

パッケージ: TO-247-3

BC857CWH6327XTSA1

Infineon Technologies

TRANS PNP 45V 0.1A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

パッケージ: SC-70, SOT-323

BCR573E6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 0.33W SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

BFP 196R E6501

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7.5GHz
• Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16.5dB
• Power - Max: 700mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: PG-SOT143-4

パッケージ: TO-253-4, TO-253AA

BAT2402LSE6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSSLP-2

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (Max): 4V
• Current - Max: 110mA
• Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): 100mW
• Operating Temperature: 150°C (TJ)
• Package / Case: 2-XFDFN
• Supplier Device Package: PG-TSSLP-2

パッケージ: 2-XFDFN

IRU1175CMTR

Infineon Technologies

IC REG LIN POS ADJ 7.5A TO263-5

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 5.5V
• Voltage Dropout (Max): 1.3V @ 7.5A
• Current - Output: 7.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263-5

パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

IR11688STRPBF

Infineon Technologies

DUAL SYNCHRONOUS RECTIFICATION C

• Applications: Secondary-Side Controller, Synchronous Rectifier
• Voltage - Input: -
• Voltage - Supply: 4.75 V ~ 18 V
• Current - Supply: 13mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

TLE8116SA

Infineon Technologies

IC SWITCH LOSIDE 16CH DSO-36

• Switch Type: General Purpose
• Number of Outputs: 16
• Ratio - Input:Output: 1:16
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 45V (Max)
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Current - Output (Max): 500mA, 1A
• Rds On (Typ): -
• Input Type: -
• Features: Status Flag
• Fault Protection: Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

パッケージ: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

IR21844S

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 1.9A, 2.3A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 40ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

パッケージ: 14-SOIC (0.154", 3.90mm Width)

PEF 24624 E V1.2

Infineon Technologies

IC SHDSL TRANSCEIVER LBGA-324

• Function: Symmetrical DSL Front End (SDFE)
• Interface: ISDN, SHDSL
• Number of Circuits: 4
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 324-LBGA
• Supplier Device Package: P-LBGA-324

パッケージ: 324-LBGA

XMC1302Q040X0032ABXUMA1

Infineon Technologies

IC MCU 32BIT 32KB FLASH 40VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 27
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-40-13

パッケージ: 40-VFQFN Exposed Pad

TLE4998P3CHAMA1

Infineon Technologies

SENSOR LINEAR PWM SSO3

• Type: Linear
• Technology: Hall Effect
• Axis: Single
• Output Type: PWM
• Sensing Range: ±50mT, ±100mT, ±200mT
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply (Max): 8mA
• Current - Output (Max): 5mA
• Resolution: 12 b
• Bandwidth: Programmable
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Selectable Scale, Temperature Compensated
• Package / Case: 3-SIP, SSO-3-10
• Supplier Device Package: SSO-3

パッケージ: 3-SIP, SSO-3-10

PVG613

Infineon Technologies

IC RELAY PHOTOVO 60V 1A 6-DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 500 mOhm
• Load Current: 1A
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 6-DIP (0.300", 7.62mm)
• Supplier Device Package: 6-DIP
• Relay Type: Relay

パッケージ: 6-DIP (0.300", 7.62mm)

FF450R12KE7PEHPSA1

Infineon Technologies

MEDIUM POWER 62MM

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 450 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 450A
• Current - Collector Cutoff (Max): 100 µA
• Input Capacitance (Cies) @ Vce: 70800 pF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MMHB

パッケージ: -

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IRFR3910

Infineon Technologies

MOSFET N-CH 100V 16A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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CYAT837AZA77-42002

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

パッケージ: -

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IS26KS256S-DPBLA300-TR

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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CYT2BL8CAAQ1AZSGSHQLA1

Infineon Technologies

TRAVEO-2 BODY ENTRYLEVEL

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 152
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 82x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP
• Supplier Device Package: 176-LQFP (24x24)

パッケージ: -

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CY8C4046FNI-T452T

Infineon Technologies

CONSUMER / IOT MCUS

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, Microwire, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
• Number of I/O: 21
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 25-XFBGA, WLCSP
• Supplier Device Package: 25-WLCSP (1.96x2.05)

パッケージ: -

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IKW40N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 82A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 82 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
• Power - Max: 330 W
• Switching Energy: 1.69mJ (on), 920µJ (off)
• Input Type: Standard
• Gate Charge: 290 nC
• Td (on/off) @ 25°C: 36ns/336ns
• Test Condition: -
• Reverse Recovery Time (trr): 120 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-U06

パッケージ: -

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FS600R07A2E3BOSA1

Infineon Technologies

MODULE IGBT 600V HYBRID PACK 2

• IGBT Type: Trench Field Stop
• Configuration: Three Phase
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 530 A
• Power - Max: 1250 W
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

パッケージ: -

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DZ600N16KHPSA1

Infineon Technologies

DIODE GEN PURP 1.6KV 735A MODULE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 735A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: -

IRFP3006PBFXKMA1

Infineon Technologies

TRENCH 40<-<100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

パッケージ: -

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