Infineon Technologies 製品 - トランジスタ - バイポーラ（BJT） - RF

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFS17PE6327HTSA1	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫211,728	15V	1.4GHz	3.5dB ~ 5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFR181WH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 20MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	パッケージ: SC-70, SOT-323	在庫46,464	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	19dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BFP650FH6327XTSA1	Infineon Technologies	TRANS RF NPN 42GHZ 4.5V 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 11dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	パッケージ: 4-SMD, Flat Leads	在庫53,592	4.5V	42GHz	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	11dB ~ 21.5dB	500mW	110 @ 80mA, 3V	150mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFR 92P E6327	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫561,240	15V	5GHz	1.4dB ~ 2dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16dB	280mW	70 @ 15mA, 8V	45mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFP740E6327	Infineon Technologies	RF TRANSISTOR, X BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Gain: 27dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: -	Request a Quote	4.7V	42GHz	0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz	27dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFR360L3E6765XTMA1	Infineon Technologies	RF TRANS NPN 9V 14GHZ TSLP-3-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Gain: 11.5dB ~ 16dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-1	パッケージ: -	Request a Quote	9V	14GHz	1dB ~ 1.3dB @ 1.8GHz ~ 3GHz	11.5dB ~ 16dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3-1
BFR740L3RHE6327XTSA1	Infineon Technologies	RF TRANS NPN 4.7V 42GHZ TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz Gain: 24.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	パッケージ: -	在庫4,377	4.7V	42GHz	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz	24.5dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BFR181E6327HTSA1	Infineon Technologies	RF TRANS NPN 12V 8GHZ SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	パッケージ: -	在庫15,813	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	18.5dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BF771E6765N	Infineon Technologies	RF TRANSISTOR, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3-4	パッケージ: -	Request a Quote	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	15dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3-4
BFR750L3RHE6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz Gain: 21dB Power - Max: 360mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	パッケージ: -	Request a Quote	4.7V	37GHz	0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz	21dB	360mW	160 @ 60mA, 3V	90mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BFR949L3E6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-1	パッケージ: -	Request a Quote	10V	9GHz	1dB ~ 2.5dB @ 1GHz	21.5dB	250mW	100 @ 5mA, 6V	50mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3-1
BFR380TE6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 12.5dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	パッケージ: -	Request a Quote	9V	14GHz	1.1dB @ 1.8GHz	12.5dB	380mW	60 @ 40mA, 3V	80mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
BFP181E7764HTSA1	Infineon Technologies	RF TRANS NPN 12V 8GHZ SOT143-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 17.5dB ~ 21dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT-143-3D	パッケージ: -	在庫1,587	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	17.5dB ~ 21dB	175mW	70 @ 70mA, 8V	20mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT-143-3D
BFR740EL3E6829XTSA1	Infineon Technologies	RF BIP TRANSISTORS Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 1.5dB @ 12GHz Gain: 11dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: TSLP-3-10	パッケージ: -	Request a Quote	-	42GHz	1.5dB @ 12GHz	11dB	160mW	160 @ 25mA, 3V	40mA	150°C (TJ)	Surface Mount	-	TSLP-3-10
RTN7735PL	Infineon Technologies	RTN7735PL - RF TRANSMITTER Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BFS17PE6752HTSA1	Infineon Technologies	RF TRANS NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	パッケージ: -	Request a Quote	15V	1.4GHz	3.5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BFP196WE6327	Infineon Technologies	RF TRANSISTOR, L BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: -	Request a Quote	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	12.5dB ~ 19dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP420E6327	Infineon Technologies	RF TRANSISTOR, X BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: -	Request a Quote	5V	25GHz	1.1dB @ 1.8GHz	21dB	160mW	60 @ 20mA, 4V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP520FE6327	Infineon Technologies	LOW-NOISE SI TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 22.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	パッケージ: -	Request a Quote	3.5V	45GHz	0.95dB @ 1.8GHz	22.5dB	100mW	70 @ 20mA, 2V	40mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFP182WE6327	Infineon Technologies	RF TRANSISTOR, L BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: -	Request a Quote	12V	8GHz	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 10mA, 8V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFS17WH6393XTSA1	Infineon Technologies	RF TRANS NPN SOT323-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323	パッケージ: -	Request a Quote	15V	1.4GHz	3.5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323
BFR193L3E6327XTMA1	Infineon Technologies	RF TRANS NPN 12V 8GHZ TSLP-3-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-1	パッケージ: -	Request a Quote	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	12.5dB ~ 19dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3-1
BFR92PE6530HTSA1	Infineon Technologies	RF LOW-NOISE SI TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BFP196WH6740	Infineon Technologies	RF TRANSISTOR, L BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4-1	パッケージ: -	Request a Quote	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	19dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4-1
BFP490E6327	Infineon Technologies	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 17.5GHz Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz Gain: 8.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 3V Current - Collector (Ic) (Max): 600mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	パッケージ: -	Request a Quote	4.5V	17.5GHz	3.3dB @ 1.8GHz	8.5dB	1W	50 @ 200mA, 3V	600mA	150°C (TJ)	Surface Mount	SC-80	PG-SCD80-2
BFS-17P-E8211	Infineon Technologies	RF TRANS NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	パッケージ: -	Request a Quote	15V	1.4GHz	3.5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BFP450	Infineon Technologies	RF SMALL SIGNAL BIPOLAR TRANSIST Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BFP640E6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	パッケージ: -	Request a Quote	4.5V	40GHz	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	24dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4

BFS17PE6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫211,728

15V

1.4GHz

3.5dB ~ 5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFR181WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 20MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

パッケージ: SC-70, SOT-323

在庫46,464

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

19dB

175mW

70 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BFP650FH6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.5V 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

パッケージ: 4-SMD, Flat Leads

在庫53,592

4.5V

42GHz

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

11dB ~ 21.5dB

500mW

110 @ 80mA, 3V

150mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFR 92P E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫561,240

15V

5GHz

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16dB

280mW

70 @ 15mA, 8V

45mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFP740E6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain: 27dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: -

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4.7V

42GHz

0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz

27dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFR360L3E6765XTMA1

Infineon Technologies

RF TRANS NPN 9V 14GHZ TSLP-3-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1

パッケージ: -

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9V

14GHz

1dB ~ 1.3dB @ 1.8GHz ~ 3GHz

11.5dB ~ 16dB

210mW

90 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3-1

BFR740L3RHE6327XTSA1

Infineon Technologies

RF TRANS NPN 4.7V 42GHZ TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 24.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

パッケージ: -

在庫4,377

4.7V

42GHz

0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz

24.5dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BFR181E6327HTSA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 18.5dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

パッケージ: -

在庫15,813

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

18.5dB

175mW

70 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BF771E6765N

Infineon Technologies

RF TRANSISTOR, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3-4

パッケージ: -

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12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

15dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3-4

BFR750L3RHE6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain: 21dB
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

パッケージ: -

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4.7V

37GHz

0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz

21dB

360mW

160 @ 60mA, 3V

90mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BFR949L3E6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1

パッケージ: -

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10V

9GHz

1dB ~ 2.5dB @ 1GHz

21.5dB

250mW

100 @ 5mA, 6V

50mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3-1

BFR380TE6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 12.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

パッケージ: -

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9V

14GHz

1.1dB @ 1.8GHz

12.5dB

380mW

60 @ 40mA, 3V

80mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

BFP181E7764HTSA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT143-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 17.5dB ~ 21dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT-143-3D

パッケージ: -

在庫1,587

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

17.5dB ~ 21dB

175mW

70 @ 70mA, 8V

20mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT-143-3D

BFR740EL3E6829XTSA1

Infineon Technologies

RF BIP TRANSISTORS

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 1.5dB @ 12GHz
Gain: 11dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: TSLP-3-10

パッケージ: -

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-

42GHz

1.5dB @ 12GHz

11dB

160mW

160 @ 25mA, 3V

40mA

150°C (TJ)

Surface Mount

-

TSLP-3-10

RTN7735PL

Infineon Technologies

RTN7735PL - RF TRANSMITTER

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

BFS17PE6752HTSA1

Infineon Technologies

RF TRANS NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

パッケージ: -

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15V

1.4GHz

3.5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BFP196WE6327

Infineon Technologies

RF TRANSISTOR, L BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: -

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12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

12.5dB ~ 19dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP420E6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 21dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: -

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5V

25GHz

1.1dB @ 1.8GHz

21dB

160mW

60 @ 20mA, 4V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP520FE6327

Infineon Technologies

LOW-NOISE SI TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Gain: 22.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

パッケージ: -

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3.5V

45GHz

0.95dB @ 1.8GHz

22.5dB

100mW

70 @ 20mA, 2V

40mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFP182WE6327

Infineon Technologies

RF TRANSISTOR, L BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: -

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12V

8GHz

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

22dB

250mW

70 @ 10mA, 8V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFS17WH6393XTSA1

Infineon Technologies

RF TRANS NPN SOT323-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323

パッケージ: -

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15V

1.4GHz

3.5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323

BFR193L3E6327XTMA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ TSLP-3-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB ~ 19dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1

パッケージ: -

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12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

12.5dB ~ 19dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3-1

BFR92PE6530HTSA1

Infineon Technologies

RF LOW-NOISE SI TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

BFP196WH6740

Infineon Technologies

RF TRANSISTOR, L BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4-1

パッケージ: -

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12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

19dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4-1

BFP490E6327

Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 17.5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz
Gain: 8.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 3V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

パッケージ: -

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4.5V

17.5GHz

3.3dB @ 1.8GHz

8.5dB

1W

50 @ 200mA, 3V

600mA

150°C (TJ)

Surface Mount

SC-80

PG-SCD80-2

BFS-17P-E8211

Infineon Technologies

RF TRANS NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

パッケージ: -

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15V

1.4GHz

3.5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BFP450

Infineon Technologies

RF SMALL SIGNAL BIPOLAR TRANSIST

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

BFP640E6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 24dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

パッケージ: -

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4.5V

40GHz

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

24dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4