Microchip Technology 製品 - トランジスタ - IGBT - シングル | Heisener Electronics
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Microchip Technology 製品 - トランジスタ - IGBT - シングル

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説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
GN2470K4-G
Microchip Technology

IC IGBT 700V 3.5A 3DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Current - Collector (Ic) (Max): 1A
  • Current - Collector Pulsed (Icm): 3.5A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 13V, 3A
  • Power - Max: 2.5W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 8ns/20ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫3,200
700V
1A
3.5A
5V @ 13V, 3A
2.5W
-
Standard
-
8ns/20ns
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
APT75GN60SDQ2G
Microchip Technology

IGBT TRENCH FS 600V 155A D3PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 155 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: 536 W
  • Switching Energy: 2.5mJ (on), 2.14mJ (off)
  • Input Type: Standard
  • Gate Charge: 485 nC
  • Td (on/off) @ 25°C: 47ns/385ns
  • Test Condition: 400V, 75A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
パッケージ: -
在庫99
600 V
155 A
225 A
1.85V @ 15V, 75A
536 W
2.5mJ (on), 2.14mJ (off)
Standard
485 nC
47ns/385ns
400V, 75A, 1Ohm, 15V
25 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
APT35GN120SG-TR
Microchip Technology

IGBT NPT FS 1200V 84A D3PAK

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 84 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
  • Power - Max: 379 W
  • Switching Energy: -, 2.315mJ (off)
  • Input Type: Standard
  • Gate Charge: 220 nC
  • Td (on/off) @ 25°C: 24ns/300ns
  • Test Condition: 800V, 35A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
パッケージ: -
Request a Quote
1200 V
84 A
105 A
2.1V @ 15V, 35A
379 W
-, 2.315mJ (off)
Standard
220 nC
24ns/300ns
800V, 35A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
APT35GN120SG
Microchip Technology

IGBT NPT FS 1200V 94A D3PAK

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 94 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
  • Power - Max: 379 W
  • Switching Energy: -, 2.315mJ (off)
  • Input Type: Standard
  • Gate Charge: 220 nC
  • Td (on/off) @ 25°C: 24ns/300ns
  • Test Condition: 800V, 35A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
パッケージ: -
在庫99
1200 V
94 A
105 A
2.1V @ 15V, 35A
379 W
-, 2.315mJ (off)
Standard
220 nC
24ns/300ns
800V, 35A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
APT80GP60B2G
Microchip Technology

IGBT PT 600V 100A TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
  • Power - Max: 1041 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: T-MAX™ [B2]
パッケージ: -
Request a Quote
600 V
100 A
-
2.7V @ 15V, 80A
1041 W
-
Standard
-
-
-
-
-
Through Hole
TO-247-3 Variant
T-MAX™ [B2]
APT20GN60BDQ2G
Microchip Technology

IGBT TRENCH FS 600V 40A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 136 W
  • Switching Energy: 230µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 9ns/140ns
  • Test Condition: 400V, 20A, 4.3Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
在庫33
600 V
40 A
60 A
1.9V @ 15V, 20A
136 W
230µJ (on), 580µJ (off)
Standard
120 nC
9ns/140ns
400V, 20A, 4.3Ohm, 15V
30 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT50GT120LRG
Microchip Technology

IGBT NPT 1200V 50A TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 625 W
  • Switching Energy: -, 2.33mJ (off)
  • Input Type: Standard
  • Gate Charge: 340 nC
  • Td (on/off) @ 25°C: 24ns/230ns
  • Test Condition: 800V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (L)
パッケージ: -
在庫87
1200 V
50 A
150 A
3.7V @ 15V, 50A
625 W
-, 2.33mJ (off)
Standard
340 nC
24ns/230ns
800V, 50A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (L)
APT20GF120BRDG
Microchip Technology

IGBT NPT COMBI 1200V 20A TO-247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): 64 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 140 nC
  • Td (on/off) @ 25°C: 17ns/93ns
  • Test Condition: 792V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 85 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
在庫54
1200 V
32 A
64 A
3.2V @ 15V, 15A
200 W
-
Standard
140 nC
17ns/93ns
792V, 20A, 10Ohm, 15V
85 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT25GN120SG-TR
Microchip Technology

IGBT TRENCH FS 1200V 67A D3PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 67 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 272 W
  • Switching Energy: -, 2.15J (off)
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: 22ns/280ns
  • Test Condition: 800V, 25A, 1Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
パッケージ: -
Request a Quote
1200 V
67 A
75 A
2.1V @ 15V, 25A
272 W
-, 2.15J (off)
Standard
155 nC
22ns/280ns
800V, 25A, 1Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
APT35GP120B2D2G
Microchip Technology

IGBT PT 1200V 96A TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 140 A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
  • Power - Max: 540 W
  • Switching Energy: 1mJ (on), 1.185mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 14ns/99ns
  • Test Condition: 800V, 35A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 85 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: T-MAX™ [B2]
パッケージ: -
在庫120
1200 V
96 A
140 A
3.9V @ 15V, 35A
540 W
1mJ (on), 1.185mJ (off)
Standard
150 nC
14ns/99ns
800V, 35A, 5Ohm, 15V
85 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
T-MAX™ [B2]
APT75GN60BDQ2G
Microchip Technology

IGBT TRENCH FS 600V 155A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 155 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: 536 W
  • Switching Energy: 2.5mJ (on), 2.14mJ (off)
  • Input Type: Standard
  • Gate Charge: 485 nC
  • Td (on/off) @ 25°C: 47ns/385ns
  • Test Condition: 400V, 75A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
在庫207
600 V
155 A
225 A
1.85V @ 15V, 75A
536 W
2.5mJ (on), 2.14mJ (off)
Standard
485 nC
47ns/385ns
400V, 75A, 1Ohm, 15V
25 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT80GA90S
Microchip Technology

IGBT PT 900V 145A D3PAK

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900 V
  • Current - Collector (Ic) (Max): 145 A
  • Current - Collector Pulsed (Icm): 239 A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
  • Power - Max: 625 W
  • Switching Energy: 1.625mJ (on), 1.389mJ (off)
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 18ns/149ns
  • Test Condition: 600V, 47A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
パッケージ: -
在庫471
900 V
145 A
239 A
3.1V @ 15V, 47A
625 W
1.625mJ (on), 1.389mJ (off)
Standard
200 nC
18ns/149ns
600V, 47A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
APT50GN60BDQ3G
Microchip Technology

IGBT TRENCH FS 600V 107A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 107 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: 366 W
  • Switching Energy: 1.185mJ (on), 1.565mJ (off)
  • Input Type: Standard
  • Gate Charge: 325 nC
  • Td (on/off) @ 25°C: 20ns/230ns
  • Test Condition: 400V, 50A, 4.3Ohm, 15V
  • Reverse Recovery Time (trr): 35 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
Request a Quote
600 V
107 A
150 A
1.85V @ 15V, 50A
366 W
1.185mJ (on), 1.565mJ (off)
Standard
325 nC
20ns/230ns
400V, 50A, 4.3Ohm, 15V
35 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
CMFCLGF100X120BTAM-AS
Microchip Technology

CMFCLGF100X120BTAM-AS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT36GA60SD15
Microchip Technology

IGBT PT 600V 65A D3PAK

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 109 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 290 W
  • Switching Energy: 307µJ (on), 254µJ (off)
  • Input Type: Standard
  • Gate Charge: 102 nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 19 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
パッケージ: -
Request a Quote
600 V
65 A
109 A
2.5V @ 15V, 20A
290 W
307µJ (on), 254µJ (off)
Standard
102 nC
16ns/122ns
400V, 20A, 10Ohm, 15V
19 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
APT20GN60SDQ2G
Microchip Technology

IGBT TRENCH FS 600V 40A D3PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 136 W
  • Switching Energy: 230µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 9ns/140ns
  • Test Condition: 400V, 20A, 4.3Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
パッケージ: -
在庫60
600 V
40 A
60 A
1.9V @ 15V, 20A
136 W
230µJ (on), 580µJ (off)
Standard
120 nC
9ns/140ns
400V, 20A, 4.3Ohm, 15V
30 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK