画像 |
部品番号 |
メーカ |
説明 |
パッケージ |
在庫 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Microsemi Corporation |
MOSFET N-CH 1200V 41A D3PAK
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パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
在庫18,444 |
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SiCFET (Silicon Carbide) | 1200V | 41A (Tc) | 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | +25V, -10V | - | 273W (Tc) | 100 mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Microsemi Corporation |
MOSFET N-CH 1000V 37A TO-264
|
パッケージ: TO-264-3, TO-264AA |
在庫6,288 |
|
MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | ±30V | - | 1135W (Tc) | 330 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi Corporation |
MOSFET N-CH 1200V 8A TO247
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パッケージ: TO-247-3 |
在庫104,256 |
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MOSFET (Metal Oxide) | 1200V | 8A (Tc) | 10V | 5V @ 1mA | 80nC @ 10V | 2565pF @ 25V | ±30V | - | 335W (Tc) | 2.5 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi Corporation |
MOSFET N-CH 500V 26A D3PAK
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 4V @ 1mA | 225 nC @ 10 V | 4440 pF @ 25 V | - | - | - | 200mOhm @ 500mA, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microsemi Corporation |
P CHANNEL MOSFET TO-257
|
パッケージ: - |
Request a Quote |
|
- | - | 6.5A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
SICFET N-CH 1700V 5A TO247-3
|
パッケージ: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | 20V | 3.2V @ 500µA | 21 nC @ 20 V | 249 pF @ 1000 V | +25V, -10V | - | 65W (Tc) | 1.25Ohm @ 2.5A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi Corporation |
SICFET N-CH 1700V 4.6A D3PAK
|
パッケージ: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1700 V | 4.6A (Tc) | 20V | 3.2V @ 500µA | 29 nC @ 20 V | 325 pF @ 1000 V | +25V, -10V | - | 52W (Tc) | 1.2Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microsemi Corporation |
MOSFET P-CH 100V 6.5A 18ULCC
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 6.5A (Tc) | 12V | 4V @ 1mA | 45 nC @ 12 V | - | ±20V | - | 25W (Tc) | 350mOhm @ 6.5A, 12V | -55°C ~ 150°C | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi Corporation |
MOSFET N-CH 1200V TO247
|
パッケージ: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi Corporation |
MOSFET N-CH 200V 26A U1
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 12V | 4V @ 1mA | 170 nC @ 12 V | - | ±20V | - | 150W (Tc) | 110mOhm @ 26A, 12V | -55°C ~ 150°C | Surface Mount | U1 (SMD-1) | 3-SMD, No Lead |
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Microsemi Corporation |
MOSFET N-CH 100V 8A 18ULCC
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | - | ±20V | - | 25W (Tc) | 185mOhm @ 8A, 12V | -55°C ~ 150°C | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi Corporation |
MOSFET N-CH 200V 5.5A 18ULCC
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | - | ±20V | - | 25W (Tc) | 364mOhm @ 5.5A, 12V | -55°C ~ 150°C | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi Corporation |
MOSFET N-CH 100V 34A U1
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 34A (Tc) | 12V | 4V @ 1mA | 160 nC @ 12 V | - | ±20V | - | 150W (Tc) | 70mOhm @ 34A, 12V | -55°C ~ 150°C | Surface Mount | U1 (SMD-1) | 3-SMD, No Lead |
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Microsemi Corporation |
SICFET N-CH 700V 78A SOT227
|
パッケージ: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 700 V | 78A (Tc) | 20V | 2.4V @ 1mA | 270 nC @ 20 V | 3950 pF @ 700 V | +25V, -10V | - | 273W (Tc) | 45mOhm @ 60A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microsemi Corporation |
SICFET N-CH 700V 110A TO247-3
|
パッケージ: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 700 V | 110A (Tc) | 20V | 2.4V @ 1mA | 220 nC @ 20 V | 3950 pF @ 700 V | +25V, -10V | - | 556W (Tc) | 45mOhm @ 60A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi Corporation |
MOSFET N-CH 700V D3PAK
|
パッケージ: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
SICFET N-CH 700V 35A TO247-3
|
パッケージ: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 700 V | 35A (Tc) | 20V | 2.5V @ 1mA | 67 nC @ 20 V | 1035 pF @ 700 V | +25V, -10V | - | 176W (Tc) | 145mOhm @ 10A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi Corporation |
SICFET 700V 35A TO247-3
|
パッケージ: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 700 V | 35A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 100V 14.4A TO257
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 14.4A (Tc) | 12V | 4V @ 1mA | 40 nC @ 12 V | - | ±20V | - | 2W (Ta), 75W (Tc) | 200mOhm @ 14.4A, 12V | -55°C ~ 150°C (TJ) | Through Hole | TO-257 | TO-257-3 |
||
Microsemi Corporation |
MOSFET N-CH 200V 9.4A TO257
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 9.4A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | - | ±20V | - | 2W (Ta), 75W (Tc) | 490mOhm @ 9.4A, 12V | -55°C ~ 150°C (TJ) | Through Hole | TO-257 | TO-257-3 |
||
Microsemi Corporation |
MOSFET P-CH 100V 6.5A TO205AF
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 6.5A (Tc) | 12V | 4V @ 1mA | 45 nC @ 12 V | - | ±20V | - | 25W (Tc) | 350mOhm @ 6.5A, 12V | -55°C ~ 150°C | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
||
Microsemi Corporation |
MOSFET N-CH 200V 26A TO254AA
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 12V | 4V @ 1mA | 170 nC @ 12 V | - | ±20V | - | 150W (Tc) | 110mOhm @ 26A, 12V | -55°C ~ 150°C | Through Hole | TO-254AA | TO-254-3, TO-254AA |
||
Microsemi Corporation |
MOSFET N-CH 500V 58A T-MAX
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 4V @ 2.5mA | 423 nC @ 10 V | 8797 pF @ 25 V | - | - | - | 80mOhm @ 29A, 10V | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 600V 35A T-MAX
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 5V @ 2.5mA | 100 nC @ 10 V | 4500 pF @ 25 V | ±30V | - | 500W (Tc) | 170mOhm @ 17.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 800V 33A TO264
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 4V @ 2.5mA | 425 nC @ 10 V | 7740 pF @ 25 V | - | - | - | 240mOhm @ 16.5A, 10V | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi Corporation |
SICFET N-CH 1.2KV D3PAK
|
パッケージ: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microsemi Corporation |
MOSFET N-CH 1000V 22A ISOTOP
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 22A (Tj) | - | 4V @ 1mA | 480 nC @ 10 V | 9000 pF @ 25 V | - | - | - | 430mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 1200V TO247
|
パッケージ: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |