ON Semiconductor 製品 - トランジスタ - プログラム可能ユニジャンクション

部品番号	メーカ	説明	パッケージ	在庫	Power Dissipation (Max)	Voltage - Output	Voltage - Offset (Vt)	Current - Gate to Anode Leakage (Igao)	Current - Valley (Iv)	Current - Peak	Package / Case
2N6028RLRPG	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫5,072	300mW	11V	600mV	10nA	25µA	150nA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRMG	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫4,544	300mW	11V	600mV	10nA	25µA	150nA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6027RL1G	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫26,400	300mW	11V	1.6V	10nA	50µA	2µA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRP	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫7,568	300mW	11V	600mV	10nA	25µA	150nA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028G	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA)	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫6,972	300mW	11V	600mV	10nA	25µA	150nA	TO-226-3, TO-92-3 (TO-226AA)
2N6027RL1	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫5,120	300mW	11V	1.6V	10nA	50µA	2µA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6027G	ON Semiconductor	TRANS PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA)	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫229,920	300mW	11V	1.6V	10nA	50µA	2µA	TO-226-3, TO-92-3 (TO-226AA)
2N6028RLRAG	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫5,840	300mW	11V	600mV	10nA	25µA	150nA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6027RLRAG	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫20,856	300mW	11V	1.6V	10nA	50µA	2µA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRA	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫3,440	300mW	11V	600mV	10nA	25µA	150nA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6027RLRA	ON Semiconductor	THYRISTOR PROG UNIJUNCT 40V TO92 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫60,000	300mW	11V	1.6V	10nA	50µA	2µA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)