Toshiba Semiconductor and Storage 製品 - トランジスタ - バイポーラ（BJT） - RF

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC5095-R(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	パッケージ: SC-70, SOT-323	在庫7,776	10V	10GHz	1.8dB @ 2GHz	13dB ~ 7.5dB	100mW	50 @ 7mA, 6V	15mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
2SC4915-Y,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: SC-75, SOT-416	在庫4,400	30V	550MHz	2.3dB ~ 5dB @ 100MHz	17dB ~ 23dB	100mW	100 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA SMINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫95,628	12V	7GHz	1.1dB @ 1GHz	11dB	150mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1GHZ PW-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 16.5dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	パッケージ: TO-243AA	在庫23,856	12V	7GHz	1.45dB @ 1GHz	16.5dB	1.8W	100 @ 50mA, 5V	80mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
2SC5086-Y,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: SC-75, SOT-416	在庫5,008	12V	7GHz	1dB @ 500MHz	-	100mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
MT3S20TU(TE85L)	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA UFM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V Gain: 12dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: UFM	パッケージ: 3-SMD, Flat Leads	在庫7,936	12V	7GHz	1.45dB @ 20mA, 5V	12dB	900mW	100 @ 50mA, 5V	80mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	UFM
2SC5087YTE85LF	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	パッケージ: SC-61AA	在庫6,112	12V	7GHz	1.1dB @ 1GHz	13dB	150mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-61AA	SMQ
2SC4915-O,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: SC-75, SOT-416	在庫72,000	30V	550MHz	2.3dB ~ 5dB @ 100MHz	17dB ~ 23dB	100mW	70 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫5,664	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC5087-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	パッケージ: SC-61AA	在庫28,542	12V	7GHz	1dB ~ 1.1dB @ 500MHz ~ 1GHz	-	150mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-61AA	SMQ
2SC5087R(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	パッケージ: SC-61AA	在庫28,182	12V	8GHz	1.1dB ~ 2dB @ 1GHz	-	150mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-61AA	SMQ
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB ~ 16.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫72,000	12V	7GHz	1.1dB @ 1GHz	11dB ~ 16.5dB	100mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	パッケージ: SC-70, SOT-323	在庫54,900	10V	10GHz	1.8dB @ 2GHz	13dB ~ 7dB	100mW	80 @ 7mA, 6V	15mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 12dB ~ 17dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫53,310	12V	7GHz	1.1dB @ 1GHz	12dB ~ 17dB	100mW	120 @ 10mA, 5V	30mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫13,080	30V	550MHz	2dB ~ 5dB @ 100MHz	17dB ~ 23dB	100mW	100 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 5V 1GHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 2.4dB @ 1GHz Gain: 4.5dBi Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V Current - Collector (Ic) (Max): 60mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫144,000	5V	4GHz	2.4dB @ 1GHz	4.5dBi	100mW	80 @ 5mA, 1V	60mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫180,000	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 10mA, 5V	30mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN S-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫100,962	30V	550MHz	2.5dB @ 100MHz	23dB	100mW	100 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ S-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫21,624	30V	550MHz	2.5dB @ 100MHz	23dB	100mW	70 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SC4215-O(TE85L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 30V 20MA SC70 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫21,750	30V	550MHz	5dB @ 100MHz	23dB	100mW	40 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC5066-O,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: SC-75, SOT-416	在庫22,500	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 10mA, 5V	30mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
MT3S113TU-LF	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 11.2GHZ UFM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 11.2GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 12.5dB Power - Max: 900mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Lead Supplier Device Package: UFM	パッケージ: -	在庫7,506	5.3V	11.2GHz	1.45dB @ 1GHz	12.5dB	900mW	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	3-SMD, Flat Lead	UFM
MT3S111P-TE12L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 6V 8GHZ PW-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.25dB @ 1GHz Gain: 10.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	パッケージ: -	Request a Quote	6V	8GHz	1.25dB @ 1GHz	10.5dB	1W	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
MT3S113P-TE12L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 7.7GHZ PW-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 7.7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 10.5dB Power - Max: 1.6W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	パッケージ: -	在庫18	5.3V	7.7GHz	1.45dB @ 1GHz	10.5dB	1.6W	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
MT3S113-TE85L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 12.5GHZ SMINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 12.5GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 11.8dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: -	在庫8,601	5.3V	12.5GHz	1.45dB @ 1GHz	11.8dB	800mW	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
MT4S300U-TE85L-O-F	Toshiba Semiconductor and Storage	X34 PB-F RADIO-FREQUENCY SIGE HE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 26.5GHz Noise Figure (dB Typ @ f): 0.55dB @ 2GHz Gain: 16.9dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	パッケージ: -	Request a Quote	4V	26.5GHz	0.55dB @ 2GHz	16.9dB	250mW	200 @ 10mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	USQ
2SC5108-Y-LF	Toshiba Semiconductor and Storage	RF TRANS NPN 10V 6GHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: -	Request a Quote	10V	6GHz	-	11dB	100mW	120 @ 5mA, 5V	30mA	-	Surface Mount	SC-75, SOT-416	SSM
2SA1483-Y-TE12L-F	Toshiba Semiconductor and Storage	2SA1483-Y(TE12L,F) Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 200MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	パッケージ: -	Request a Quote	45V	200MHz	-	-	-	120 @ 10mA, 1V	200mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI

2SC5095-R(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

パッケージ: SC-70, SOT-323

在庫7,776

10V

10GHz

1.8dB @ 2GHz

13dB ~ 7.5dB

100mW

50 @ 7mA, 6V

15mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

2SC4915-Y,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
Gain: 17dB ~ 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: SC-75, SOT-416

在庫4,400

30V

550MHz

2.3dB ~ 5dB @ 100MHz

17dB ~ 23dB

100mW

100 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

2SC5084-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫95,628

12V

7GHz

1.1dB @ 1GHz

11dB

150mW

80 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

MT3S20P(TE12L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1GHZ PW-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 16.5dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

パッケージ: TO-243AA

在庫23,856

12V

7GHz

1.45dB @ 1GHz

16.5dB

1.8W

100 @ 50mA, 5V

80mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

2SC5086-Y,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: SC-75, SOT-416

在庫5,008

12V

7GHz

1dB @ 500MHz

-

100mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

MT3S20TU(TE85L)

Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA UFM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V
Gain: 12dB
Power - Max: 900mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: UFM

パッケージ: 3-SMD, Flat Leads

在庫7,936

12V

7GHz

1.45dB @ 20mA, 5V

12dB

900mW

100 @ 50mA, 5V

80mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

UFM

2SC5087YTE85LF

Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

パッケージ: SC-61AA

在庫6,112

12V

7GHz

1.1dB @ 1GHz

13dB

150mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-61AA

SMQ

2SC4915-O,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
Gain: 17dB ~ 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: SC-75, SOT-416

在庫72,000

30V

550MHz

2.3dB ~ 5dB @ 100MHz

17dB ~ 23dB

100mW

70 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

2SC5085-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫5,664

12V

7GHz

1dB @ 500MHz

-

100mW

80 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC5087-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

パッケージ: SC-61AA

在庫28,542

12V

7GHz

1dB ~ 1.1dB @ 500MHz ~ 1GHz

-

150mW

80 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-61AA

SMQ

2SC5087R(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

パッケージ: SC-61AA

在庫28,182

12V

8GHz

1.1dB ~ 2dB @ 1GHz

-

150mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-61AA

SMQ

2SC5085-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫72,000

12V

7GHz

1.1dB @ 1GHz

11dB ~ 16.5dB

100mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC5095-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 13dB ~ 7dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

パッケージ: SC-70, SOT-323

在庫54,900

10V

10GHz

1.8dB @ 2GHz

13dB ~ 7dB

100mW

80 @ 7mA, 6V

15mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

2SC5065-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 12dB ~ 17dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫53,310

12V

7GHz

1.1dB @ 1GHz

12dB ~ 17dB

100mW

120 @ 10mA, 5V

30mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC4215-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Gain: 17dB ~ 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫13,080

30V

550MHz

2dB ~ 5dB @ 100MHz

17dB ~ 23dB

100mW

100 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

MT3S16U(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 5V 1GHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
Gain: 4.5dBi
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫144,000

5V

4GHz

2.4dB @ 1GHz

4.5dBi

100mW

80 @ 5mA, 1V

60mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC5065-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫180,000

12V

7GHz

1dB @ 500MHz

-

100mW

80 @ 10mA, 5V

30mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC2714-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN S-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Gain: 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫100,962

30V

550MHz

2.5dB @ 100MHz

23dB

100mW

100 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2SC2714-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ S-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Gain: 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫21,624

30V

550MHz

2.5dB @ 100MHz

23dB

100mW

70 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2SC4215-O(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 30V 20MA SC70

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 5dB @ 100MHz
Gain: 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫21,750

30V

550MHz

5dB @ 100MHz

23dB

100mW

40 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC5066-O,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: SC-75, SOT-416

在庫22,500

12V

7GHz

1dB @ 500MHz

-

100mW

80 @ 10mA, 5V

30mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

MT3S113TU-LF

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 11.2GHZ UFM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 12.5dB
Power - Max: 900mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: UFM

パッケージ: -

在庫7,506

5.3V

11.2GHz

1.45dB @ 1GHz

12.5dB

900mW

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

3-SMD, Flat Lead

UFM

MT3S111P-TE12L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
Gain: 10.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

パッケージ: -

Request a Quote

6V

8GHz

1.25dB @ 1GHz

10.5dB

1W

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

MT3S113P-TE12L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 10.5dB
Power - Max: 1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

パッケージ: -

在庫18

5.3V

7.7GHz

1.45dB @ 1GHz

10.5dB

1.6W

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

MT3S113-TE85L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 12.5GHZ SMINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 11.8dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: -

在庫8,601

5.3V

12.5GHz

1.45dB @ 1GHz

11.8dB

800mW

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

MT4S300U-TE85L-O-F

Toshiba Semiconductor and Storage

X34 PB-F RADIO-FREQUENCY SIGE HE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 26.5GHz
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Gain: 16.9dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: USQ

パッケージ: -

Request a Quote

4V

26.5GHz

0.55dB @ 2GHz

16.9dB

250mW

200 @ 10mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

USQ

2SC5108-Y-LF

Toshiba Semiconductor and Storage

RF TRANS NPN 10V 6GHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: -

Request a Quote

10V

6GHz

-

11dB

100mW

120 @ 5mA, 5V

30mA

-

Surface Mount

SC-75, SOT-416

SSM

2SA1483-Y-TE12L-F

Toshiba Semiconductor and Storage

2SA1483-Y(TE12L,F)

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 200MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

パッケージ: -

Request a Quote

45V

200MHz

-

120 @ 10mA, 1V

200mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI