ページ 3 - Broadcom Limited 製品 - トランジスタ - バイポーラ（BJT） - RF

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AT-64000-GP4	Broadcom Limited	TRANSISTOR NPN BIPOLAR CHIP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: -	パッケージ: Die	在庫3,344	20V	-	-	-	3W	20 @ 110mA, 8V	200mA	200°C (TJ)	Surface Mount	Die	-
AT-42000-GP4	Broadcom Limited	TRANSISTOR NPN BIPOLAR CHIP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10.5dB ~ 14dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Chip	パッケージ: Die	在庫6,048	12V	9GHz	1.9dB ~ 3dB @ 2GHz ~ 4GHz	10.5dB ~ 14dB	600mW	30 @ 35mA, 8V	80mA	200°C (TJ)	Surface Mount	Die	Chip
AT-41535G	Broadcom Limited	TRANSISTOR NPN BIPOLAR 35MICRO-X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz Gain: 10dB ~ 18dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (35 micro-X) Supplier Device Package: 35 micro-X	パッケージ: 4-SMD (35 micro-X)	在庫5,488	12V	8GHz	1.3dB ~ 3dB @ 1GHz ~ 4GHz	10dB ~ 18dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	4-SMD (35 micro-X)	35 micro-X