ページ 197 - Cypress Semiconductor Corp 製品 - メモリ | Heisener Electronics
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Cypress Semiconductor Corp 製品 - メモリ

レコード 9,930
ページ  197/331
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部品番号
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説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
S34SL04G200BHI000
Cypress Semiconductor Corp

NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,304
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
-
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
S34ML02G104BHB010
Cypress Semiconductor Corp

NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,480
FLASH
FLASH - NAND
2Gb (128M x 16)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
S34ML04G204BHI010
Cypress Semiconductor Corp

FLASH MEMORY NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
パッケージ: 63-VFBGA
在庫4,608
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
S34ML02G100BHB000
Cypress Semiconductor Corp

IC FLASH 2GBIT 25NS 63BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
パッケージ: 63-VFBGA
在庫4,032
FLASH
FLASH - NAND
2Gb (256M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
S34ML02G104BHI010
Cypress Semiconductor Corp

IC FLASH 2GBIT 25NS 63BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
パッケージ: 63-VFBGA
在庫7,520
FLASH
FLASH - NAND
2Gb (128M x 16)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
S29GL256S11DHVV20
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,672
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
CY62128ELL-45SXA
Cypress Semiconductor Corp

IC SRAM 1MBIT 45NS 32SOIC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOIC
パッケージ: 32-SOIC (0.445", 11.30mm Width)
在庫5,376
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOIC
S29GL256S10DHB023
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,496
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
S34MS02G200BHV000
Cypress Semiconductor Corp

NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,288
FLASH
FLASH - NAND
2Gb (256M x 8)
Parallel
-
45ns
45ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
-
-
-
S34MS02G200GHV000
Cypress Semiconductor Corp

NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,880
FLASH
FLASH - NAND
2Gb (256M x 8)
Parallel
-
45ns
45ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
-
-
-
CY62148DV30LL-55SXIT
Cypress Semiconductor Corp

IC SRAM 4MBIT 55NS 32SOIC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOIC
パッケージ: 32-SOIC (0.445", 11.30mm Width)
在庫5,408
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
55ns
55ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOIC
CY7C1011G30-10ZSXA
Cypress Semiconductor Corp

IC SRAM 2MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫4,224
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
S72XS256RE0AHBJ13
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, DRAM
  • Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,368
FLASH, RAM
FLASH, DRAM
256Mbit Flash, 2565Mbit DDR DRAM
Parallel
108MHz
-
-
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
-
-
-
S72XS256RE0AHBHH3
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, DRAM
  • Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,912
FLASH, RAM
FLASH, DRAM
256Mbit Flash, 2565Mbit DDR DRAM
Parallel
108MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
-
-
-
S72VS256RE0AHBJ13
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, DRAM
  • Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,280
FLASH, RAM
FLASH, DRAM
256Mbit Flash, 2565Mbit DDR DRAM
Parallel
108MHz
-
-
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
-
-
-
S72VS256RE0AHBH13
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, DRAM
  • Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,896
FLASH, RAM
FLASH, DRAM
256Mbit Flash, 2565Mbit DDR DRAM
Parallel
108MHz
-
-
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
-
-
-
S29GL512T11DHIV23
Cypress Semiconductor Corp

FLASH MEMORY NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
パッケージ: 64-LBGA
在庫6,416
FLASH
FLASH - NOR
512Mb (64M x 8)
Parallel
-
60ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (9x9)
S29GL512T11DHIV13
Cypress Semiconductor Corp

FLASH MEMORY NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
パッケージ: 64-LBGA
在庫7,568
FLASH
FLASH - NOR
512Mb (64M x 8)
Parallel
-
60ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (9x9)
S29GL512T10DHI023
Cypress Semiconductor Corp

FLASH MEMORY NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
パッケージ: 64-LBGA
在庫4,896
FLASH
FLASH - NOR
512Mb (64M x 8)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (9x9)
S34ML01G100BHV000
Cypress Semiconductor Corp

IC FLASH 1GBIT 25NS 63BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
パッケージ: 63-VFBGA
在庫6,144
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
CY621282BNLL-70SXE
Cypress Semiconductor Corp

IC SRAM 1MBIT 70NS 32SOIC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOIC
パッケージ: 32-SOIC (0.445", 11.30mm Width)
在庫7,920
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOIC
S29GL256S10FHIV20
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,488
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
100ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
hot S29GL256S11FHIV10
Cypress Semiconductor Corp

IC FLASH 256MBIT 110NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-Fortified BGA (13x11)
パッケージ: 64-LBGA
在庫6,896
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-Fortified BGA (13x11)
S29GL256S10FHIV10
Cypress Semiconductor Corp

IC FLASH 256MBIT 100NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-Fortified BGA (13x11)
パッケージ: 64-LBGA
在庫5,904
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
100ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-Fortified BGA (13x11)
CY62137FV30LL-45ZSXA
Cypress Semiconductor Corp

IC SRAM 2MBIT 45NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫2,000
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
S29GL256S90GHA010
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,360
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
S29GL256S90GHI020
Cypress Semiconductor Corp

IC FLASH 256MBIT 90NS 56BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFBGA
  • Supplier Device Package: 56-Fortified BGA (9x7)
パッケージ: 56-VFBGA
在庫5,120
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-VFBGA
56-Fortified BGA (9x7)
S29GL256S10GHIV20
Cypress Semiconductor Corp

IC FLASH 256MBIT 100NS 56BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFBGA
  • Supplier Device Package: 56-Fortified BGA (9x7)
パッケージ: 56-VFBGA
在庫4,336
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
100ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-VFBGA
56-Fortified BGA (9x7)
S29GL256S10DHIV10
Cypress Semiconductor Corp

IC FLASH 256MBIT 100NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-Fortified BGA (9x9)
パッケージ: 64-LBGA
在庫3,456
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
-
60ns
100ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-Fortified BGA (9x9)
CY62136FV30LL-55ZSXET
Cypress Semiconductor Corp

IC SRAM 2MBIT 55NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫6,528
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
55ns
55ns
2 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II