ページ 7 - Diodes Incorporated 製品 - トランジスタ - FET、MOSFET - アレイ

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DMC3730UVT-7	Diodes Incorporated	MOSFET N/P-CH 25V 0.68A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	パッケージ: -	在庫8,970	-	25V	680mA (Ta), 460mA (Ta)	450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V	1.1V @ 250µA	1.64nC @ 4.5V, 1.1nC @ 4.5V	50pF @ 10V, 63pF @ 10V	700mW	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN2024UDH-7	Diodes Incorporated	MOSFET 2N-CH 20V 5.2A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 950mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	パッケージ: -	Request a Quote	-	20V	5.2A (Ta)	23mOhm @ 6.5A, 4.5V	1V @ 250µA	7.1nC @ 4.5V	647pF @ 10V	950mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerUDFN	U-DFN3030-8
DMN33D8LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.25A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	在庫9,000	-	30V	250mA (Ta)	2.4Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC21D1UDA-7B	Diodes Incorporated	MOSFET N/P-CH 20V 0.455A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	パッケージ: -	在庫26,316	-	20V	455mA (Ta), 328mA (Ta)	990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.41nC @ 4.5V, 0.4nC @ 4.5V	31pF @ 15V, 28.5pF @ 15V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
DMT2005UDV-7	Diodes Incorporated	MOSFET 2N-CH 24V 50A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	パッケージ: -	Request a Quote	-	24V	50A (Tc)	7mOhm @ 14A, 10V	1.5V @ 250µA	46.7nC @ 10V	2060pF @ 10V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMN31D5UDW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	Request a Quote	-	30V	430mA (Ta)	1.5Ohm @ 100mA, 4.5V	0.9V @ 250µA	0.3nC @ 4.5V	15.4pF @ 15V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN2024UFX-7	Diodes Incorporated	MOSFET 2N-CH 20V 8A 4VDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 920mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VFDFN Exposed Pad Supplier Device Package: V-DFN2050-4	パッケージ: -	Request a Quote	-	20V	8A (Tc)	22mOhm @ 4A, 4.5V	1V @ 250µA	14.8nC @ 10V	647pF @ 10V	920mW	-55°C ~ 150°C (TJ)	Surface Mount	4-VFDFN Exposed Pad	V-DFN2050-4
DMC3071LVT-13	Diodes Incorporated	MOSFET N/P-CH 30V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	パッケージ: -	在庫30,000	-	30V	4.6A (Ta), 3.3A (Ta)	50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V	2.5V @ 250µA	4.5nC @ 10V, 6.5nC @ 10V	190pF @ 15V, 254pF @ 15V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMTH45M5LPDW-13	Diodes Incorporated	MOSFET 2N-CH 40V 79A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Power - Max: 3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	パッケージ: -	在庫7,440	-	40V	79A (Tc)	5.5mOhm @ 25A, 10V	2.3V @ 250µA	13.9nC @ 10V	978pF @ 20V	3W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMN2024UFU-7	Diodes Incorporated	MOSFET 2N-CH 20V 7.5A/21A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 810mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	パッケージ: -	Request a Quote	-	20V	7.5A (Ta), 21A (Tc)	20.2mOhm @ 6.5A, 4.5V	950mV @ 250µA	14.8nC @ 10V	647pF @ 10V	810mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
DMP2075UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.8A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	パッケージ: -	在庫225,333	-	20V	3.8A (Ta)	75mOhm @ 2.9A, 4.5V	1.4V @ 250µA	8.8nC @ 4.5V	642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMN13M9UCA6-7	Diodes Incorporated	MOSFET 2N-CH X3-DSN3518-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Power - Max: 2.67W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN3518-6	パッケージ: -	Request a Quote	-	-	-	-	1.3V @ 1mA	56.5nC @ 4.5V	3315pF @ 6V	2.67W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN3518-6
DMP2200UFCL-7	Diodes Incorporated	MOSFET 2P-CH 20V 1.7A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Power - Max: 660mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN1616-6 (Type F)	パッケージ: -	在庫9,000	-	20V	1.7A	200mOhm @ 2A, 4.5V	1.2V @ 250µA	2.2nC @ 4.5V	184pF @ 10V	660mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN1616-6 (Type F)
DMN32M6LCA8-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V X4-DSN6025 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 15V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, No Lead Supplier Device Package: X4-DSN6025-8	パッケージ: -	Request a Quote	-	30V	30A (Ta)	2.6mOhm @ 10A, 10V	2.2V @ 1mA	42.7nC @ 4.5V	2780pF @ 15V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, No Lead	X4-DSN6025-8
DMN3401LDW-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	在庫59,580	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 250µA	1.2nC @ 10V	50pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMG1023UVQ-13	Diodes Incorporated	MOSFET 2P-CH 20V 1.03A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Power - Max: 530mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	Request a Quote	-	20V	1.03A (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.622nC @ 4.5V	59pF @ 16V	530mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMNH6035SPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 33A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V Power - Max: 2.4W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	パッケージ: -	在庫7,500	-	60V	33A (Tc)	35mOhm @ 15A, 10V	3V @ 250µA	16nC @ 10V	879pF @ 25V	2.4W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
DMP31D1UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	パッケージ: -	Request a Quote	-	30V	760mA (Ta)	1Ohm @ 400mA, 4.5V	1.1V @ 250µA	1.6nC @ 8V	54pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN62D2UV-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	Request a Quote	-	60V	450mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMTH45M5LPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 79A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Power - Max: 3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	パッケージ: -	在庫1,815	-	40V	79A (Tc)	5.5mOhm @ 25A, 10V	2.3V @ 250µA	13.9nC @ 10V	978pF @ 20V	3W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMP2900UDWQ-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	Request a Quote	-	20V	630mA (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.7nC @ 4.5V	49pF @ 16V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN53D0LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.46A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	在庫9,000	-	50V	460mA (Ta)	1.6Ohm @ 500mA, 10V	1.5V @ 250µA	1.4nC @ 10V	49.5pF @ 25V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMTH10H017LPDQ-13	Diodes Incorporated	MOSFET 2N-CH 100V 13A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Power - Max: 1.5W (Ta), 93W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type E)	パッケージ: -	在庫7,500	-	100V	13A (Ta), 59A (Tc)	17.4mOhm @ 17A, 10V	3V @ 250µA	28.6nC @ 10V	1986pF @ 50V	1.5W (Ta), 93W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type E)
DMP4011SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP2110UVT-7	Diodes Incorporated	MOSFET 2P-CH 20V 1.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Power - Max: 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	パッケージ: -	在庫9,000	-	20V	1.8A (Ta)	150mOhm @ 2.8A, 4.5V	1V @ 250µA	6nC @ 4.5V	443pF @ 6V	740mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN52D0UDWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	Request a Quote	-	50V	350mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	42.3pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSS84DWQ-13	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	Request a Quote	-	50V	130mA (Ta)	10Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMTH6015LDVWQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 9.2A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Power - Max: 1.46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	パッケージ: -	Request a Quote	-	60V	9.2A (Ta), 24.5A (Tc)	20.5mOhm @ 10A, 10V	2.5V @ 250µA	14.3nC @ 10V	825pF @ 30V	1.46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
DMN2046UVT-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V Power - Max: 590mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	パッケージ: -	Request a Quote	-	20V	2.6A (Ta)	90mOhm @ 3.6A, 4.5V	1.4V @ 250µA	7.4nC @ 10V	278pF @ 10V	590mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN62D2UVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500µW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	Request a Quote	-	60V	450mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500µW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563

DMC3730UVT-7

Diodes Incorporated

MOSFET N/P-CH 25V 0.68A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

パッケージ: -

在庫8,970

-

25V

680mA (Ta), 460mA (Ta)

450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V

1.1V @ 250µA

1.64nC @ 4.5V, 1.1nC @ 4.5V

50pF @ 10V, 63pF @ 10V

700mW

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN2024UDH-7

Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 950mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8

パッケージ: -

Request a Quote

-

20V

5.2A (Ta)

23mOhm @ 6.5A, 4.5V

1V @ 250µA

7.1nC @ 4.5V

647pF @ 10V

950mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerUDFN

U-DFN3030-8

DMN33D8LDWQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.25A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

在庫9,000

-

30V

250mA (Ta)

2.4Ohm @ 250mA, 10V

1.5V @ 100µA

1.23nC @ 10V

48pF @ 5V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC21D1UDA-7B

Diodes Incorporated

MOSFET N/P-CH 20V 0.455A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

パッケージ: -

在庫26,316

-

20V

455mA (Ta), 328mA (Ta)

990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V

1V @ 250µA

0.41nC @ 4.5V, 0.4nC @ 4.5V

31pF @ 15V, 28.5pF @ 15V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

DMT2005UDV-7

Diodes Incorporated

MOSFET 2N-CH 24V 50A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

パッケージ: -

Request a Quote

-

24V

50A (Tc)

7mOhm @ 14A, 10V

1.5V @ 250µA

46.7nC @ 10V

2060pF @ 10V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMN31D5UDW-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

Request a Quote

-

30V

430mA (Ta)

1.5Ohm @ 100mA, 4.5V

0.9V @ 250µA

0.3nC @ 4.5V

15.4pF @ 15V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN2024UFX-7

Diodes Incorporated

MOSFET 2N-CH 20V 8A 4VDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 920mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Supplier Device Package: V-DFN2050-4

パッケージ: -

Request a Quote

-

20V

8A (Tc)

22mOhm @ 4A, 4.5V

1V @ 250µA

14.8nC @ 10V

647pF @ 10V

920mW

-55°C ~ 150°C (TJ)

Surface Mount

4-VFDFN Exposed Pad

V-DFN2050-4

DMC3071LVT-13

Diodes Incorporated

MOSFET N/P-CH 30V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

パッケージ: -

在庫30,000

-

30V

4.6A (Ta), 3.3A (Ta)

50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V

2.5V @ 250µA

4.5nC @ 10V, 6.5nC @ 10V

190pF @ 15V, 254pF @ 15V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMTH45M5LPDW-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Power - Max: 3W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

パッケージ: -

在庫7,440

-

40V

79A (Tc)

5.5mOhm @ 25A, 10V

2.3V @ 250µA

13.9nC @ 10V

978pF @ 20V

3W (Ta), 60W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMN2024UFU-7

Diodes Incorporated

MOSFET 2N-CH 20V 7.5A/21A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 810mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

パッケージ: -

Request a Quote

-

20V

7.5A (Ta), 21A (Tc)

20.2mOhm @ 6.5A, 4.5V

950mV @ 250µA

14.8nC @ 10V

647pF @ 10V

810mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

DMP2075UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

パッケージ: -

在庫225,333

-

20V

3.8A (Ta)

75mOhm @ 2.9A, 4.5V

1.4V @ 250µA

8.8nC @ 4.5V

642pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMN13M9UCA6-7

Diodes Incorporated

MOSFET 2N-CH X3-DSN3518-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Power - Max: 2.67W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN3518-6

パッケージ: -

Request a Quote

-

1.3V @ 1mA

56.5nC @ 4.5V

3315pF @ 6V

2.67W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN3518-6

DMP2200UFCL-7

Diodes Incorporated

MOSFET 2P-CH 20V 1.7A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Power - Max: 660mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN1616-6 (Type F)

パッケージ: -

在庫9,000

-

20V

1.7A

200mOhm @ 2A, 4.5V

1.2V @ 250µA

2.2nC @ 4.5V

184pF @ 10V

660mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN1616-6 (Type F)

DMN32M6LCA8-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V X4-DSN6025

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 42.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 15V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, No Lead
Supplier Device Package: X4-DSN6025-8

パッケージ: -

Request a Quote

-

30V

30A (Ta)

2.6mOhm @ 10A, 10V

2.2V @ 1mA

42.7nC @ 4.5V

2780pF @ 15V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, No Lead

X4-DSN6025-8

DMN3401LDW-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

在庫59,580

-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 250µA

1.2nC @ 10V

50pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMG1023UVQ-13

Diodes Incorporated

MOSFET 2P-CH 20V 1.03A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
Power - Max: 530mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

Request a Quote

-

20V

1.03A (Ta)

750mOhm @ 430mA, 4.5V

1V @ 250µA

0.622nC @ 4.5V

59pF @ 16V

530mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMNH6035SPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 33A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Power - Max: 2.4W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type R)

パッケージ: -

在庫7,500

-

60V

33A (Tc)

35mOhm @ 15A, 10V

3V @ 250µA

16nC @ 10V

879pF @ 25V

2.4W (Ta), 68W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type R)

DMP31D1UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

パッケージ: -

Request a Quote

-

30V

760mA (Ta)

1Ohm @ 400mA, 4.5V

1.1V @ 250µA

1.6nC @ 8V

54pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN62D2UV-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

Request a Quote

-

60V

450mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMTH45M5LPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Power - Max: 3W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

パッケージ: -

在庫1,815

-

40V

79A (Tc)

5.5mOhm @ 25A, 10V

2.3V @ 250µA

13.9nC @ 10V

978pF @ 20V

3W (Ta), 60W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMP2900UDWQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

Request a Quote

-

20V

630mA (Ta)

750mOhm @ 430mA, 4.5V

1V @ 250µA

0.7nC @ 4.5V

49pF @ 16V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN53D0LDWQ-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.46A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

在庫9,000

-

50V

460mA (Ta)

1.6Ohm @ 500mA, 10V

1.5V @ 250µA

1.4nC @ 10V

49.5pF @ 25V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMTH10H017LPDQ-13

Diodes Incorporated

MOSFET 2N-CH 100V 13A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Power - Max: 1.5W (Ta), 93W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type E)

パッケージ: -

在庫7,500

-

100V

13A (Ta), 59A (Tc)

17.4mOhm @ 17A, 10V

3V @ 250µA

28.6nC @ 10V

1986pF @ 50V

1.5W (Ta), 93W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type E)

DMP4011SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

DMP2110UVT-7

Diodes Incorporated

MOSFET 2P-CH 20V 1.8A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Power - Max: 740mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

パッケージ: -

在庫9,000

-

20V

1.8A (Ta)

150mOhm @ 2.8A, 4.5V

1V @ 250µA

6nC @ 4.5V

443pF @ 6V

740mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN52D0UDWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

Request a Quote

-

50V

350mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.5nC @ 10V

42.3pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BSS84DWQ-13

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

Request a Quote

-

50V

130mA (Ta)

10Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMTH6015LDVWQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Power - Max: 1.46W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXD)

パッケージ: -

Request a Quote

-

60V

9.2A (Ta), 24.5A (Tc)

20.5mOhm @ 10A, 10V

2.5V @ 250µA

14.3nC @ 10V

825pF @ 30V

1.46W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXD)

DMN2046UVT-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
Power - Max: 590mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

パッケージ: -

Request a Quote

-

20V

2.6A (Ta)

90mOhm @ 3.6A, 4.5V

1.4V @ 250µA

7.4nC @ 10V

278pF @ 10V

590mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN62D2UVQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500µW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

Request a Quote

-

60V

450mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500µW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563