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Diodes Incorporated 製品

レコード 22,098
ページ  173/790
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FN0400063
Diodes Incorporated

OSCILLATOR XO 4.000MHZ CMOS SMD

  • Type: XO (Standard)
  • Frequency: 4MHz
  • Function: Enable/Disable
  • Output: CMOS
  • Voltage - Supply: 3.3V
  • Frequency Stability: ±50ppm
  • Operating Temperature: -40°C ~ 85°C
  • Current - Supply (Max): 15mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
  • Height - Seated (Max): 0.071" (1.80mm)
パッケージ: 4-SMD, No Lead
在庫5,454
DMP21D0UFB-7
Diodes Incorporated

MOSFET P-CH 20V 0.77A DFN1006-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 76.5pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 430mW (Ta)
  • Rds On (Max) @ Id, Vgs: 495 mOhm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-DFN1006 (1.0x0.6)
  • Package / Case: 3-UFDFN
パッケージ: 3-UFDFN
在庫3,520
hot DMP4015SK3Q-13
Diodes Incorporated

MOSFET P-CH 40V 14A TO252 DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫13,152
DMHC3025LSD-13
Diodes Incorporated

MOSFET 2N/2P-CH 30V 8SO

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫59,394
DDTC124XCA-7
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫5,584
MMSZ5237BS-7
Diodes Incorporated

DIODE ZENER 8.2V 200MW SOD323

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 3µA @ 6.5V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
パッケージ: SC-76, SOD-323
在庫7,696
BZT52C20S-7
Diodes Incorporated

DIODE ZENER 20V 200MW SOD323

  • Voltage - Zener (Nom) (Vz): 20V
  • Tolerance: ±6%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 55 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 14V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
パッケージ: SC-76, SOD-323
在庫3,504
DDZ20C-7
Diodes Incorporated

DIODE ZENER 20V 500MW SOD123

  • Voltage - Zener (Nom) (Vz): 20V
  • Tolerance: ±3%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 28 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 15V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
パッケージ: SOD-123
在庫43,470
hot BZX84C7V5TS-7-F
Diodes Incorporated

DIODE ZENER ARRAY 7.5V SOT363

  • Configuration: 3 Independent
  • Voltage - Zener (Nom) (Vz): 7.5V
  • Tolerance: ±6%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 5V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫396,000
DZ23C9V1-7
Diodes Incorporated

DIODE ZENER ARRAY 9.1V SOT23-3

  • Configuration: 1 Pair Common Cathode
  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±5%
  • Power - Max: 300mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫4,096
hot ZC933ATA
Diodes Incorporated

DIODE VAR CAP 42PF 1A SOT23-3

  • Capacitance @ Vr, F: 12pF @ 4V, 50MHz
  • Capacitance Ratio: -
  • Capacitance Ratio Condition: -
  • Voltage - Peak Reverse (Max): 12V
  • Diode Type: Single
  • Q @ Vr, F: 150 @ 4V, 50MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫1,615,128
hot DSR8V600
Diodes Incorporated

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3.2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 23ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: TO-220-2
在庫134,052
hot MBR1060
Diodes Incorporated

DIODE SCHOTTKY 60V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 60V
  • Capacitance @ Vr, F: 400pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: TO-220-2
在庫117,216
hot 1N4148W-7
Diodes Incorporated

DIODE GEN PURP 100V 300MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: SOD-123
在庫353,664
hot SBR1U200P1-7
Diodes Incorporated

DIODE SBR 200V 1A POWERDI123

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: POWERDI?123
在庫317,280
hot S2M-13-F
Diodes Incorporated

DIODE GEN PURP 1KV 1.5A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: DO-214AA, SMB
在庫506,160
hot AP1117Y33L-13
Diodes Incorporated

IC REG LINEAR 3.3V 1A SOT89-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 18V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.4V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 60dB (180Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: TO-243AA
在庫78,240
PT7M8202B33TA5EX-2017
Diodes Incorporated

IC REG LINEAR 300MA SOT25

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,608
PT8A3243WE
Diodes Incorporated

HEATER CONTROLLER SO-8

  • Applications: -
  • Current - Supply: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,424
74LVC2G38HK3-7
Diodes Incorporated

LOGIC LVC 2 GATE X2-DFN1410-8

  • Logic Type: NAND Gate
  • Number of Circuits: 2
  • Number of Inputs: 4
  • Features: Open Drain
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: -, 32mA
  • Logic Level - Low: 0.1 V ~ 0.8 V
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1410-8
  • Package / Case: 8-XFDFN
パッケージ: 8-XFDFN
在庫2,592
74AUP2G17FW3-7
Diodes Incorporated

IC BUFFER SCHMITT TRIG DL 6DFN

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 1
  • Input Type: Schmitt Trigger
  • Output Type: Push-Pull
  • Current - Output High, Low: 4mA, 4mA
  • Voltage - Supply: 0.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: X2-DFN0910-6
パッケージ: 6-XFDFN
在庫7,248
hot PI3HDMI412FTBE
Diodes Incorporated

IC DVI/HDMI MUX/DEMUX 48BQSOP

  • Applications: Video
  • Interface: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Package / Case: 48-FSOP (0.154", 3.90mm Width)
  • Supplier Device Package: 48-BQSOP
  • Mounting Type: Surface Mount
パッケージ: 48-FSOP (0.154", 3.90mm Width)
在庫14,376
hot PI7C9X20505GPBNDE
Diodes Incorporated

IC PCIE PACKET SWITCH 256BGA

  • Applications: Packet Switch, 5-Port/5-Lane
  • Interface: PCI Express
  • Voltage - Supply: -
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-PBGA (17x17)
  • Mounting Type: Surface Mount
パッケージ: 256-BGA
在庫17,580
AH3765Q-P-B
Diodes Incorporated

MAGNETIC SWITCH LATCH 3SIP

  • Function: Latch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 9mT Trip, -9mT Release
  • Test Condition: -40°C ~ 150°C
  • Voltage - Supply: 3 V ~ 28 V
  • Current - Supply (Max): 4mA
  • Current - Output (Max): 60mA
  • Output Type: Open Drain
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Package / Case: 3-SIP Module
  • Supplier Device Package: 3-SIP
パッケージ: 3-SIP Module
在庫17,748
AP3441SHE-7B
Diodes Incorporated

IC REG BUCK ADJ 3A UDFN2020-8

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.6V
  • Voltage - Output (Max): 5.5V
  • Current - Output: 3A
  • Frequency - Switching: 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-8
パッケージ: 8-VFDFN Exposed Pad
在庫6,448
DMN6017SFV-7
Diodes Incorporated

MOSFET N-CH 60V 35A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
パッケージ: -
在庫6,000
DMP22D4UFO-7B
Diodes Incorporated

MOSFET P-CH 20V 530MA 3DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 28.7 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 820mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN0604-3
  • Package / Case: 3-XFDFN
パッケージ: -
在庫92,553
DMN1019USNQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SC59 T&R 10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 680mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: -
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