Diodes Incorporated 製品

ZTX655STOA

Diodes Incorporated

TRANS NPN 150V 1A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
• Power - Max: 1W
• Frequency - Transition: 30MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

パッケージ: E-Line-3, Formed Leads

ZTX949

Diodes Incorporated

TRANS PNP 30V 4.5A E-LINE

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 4.5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 5A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
• Power - Max: 1.58W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)

パッケージ: E-Line-3

DDTC115TUA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

BAS116

Diodes Incorporated

DIODE GEN PURP 85V 215MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 85V
• Current - Average Rectified (Io): 215mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-236-3, SC-59, SOT-23-3

SK13-13-F

Diodes Incorporated

DIODE SCHOTTKY 30V 1A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: 110pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: DO-214AA, SMB

GBPC2506

Diodes Incorporated

RECT BRIDGE GPP 600V 25A GBPC

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

パッケージ: 4-Square, GBPC

AP1117K50L-13

Diodes Incorporated

IC REG LINEAR 5V 1A TO263-2

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 60dB (180Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PAM2400AAA330

Diodes Incorporated

IC REG BST 3.3V 0.4A SYNC SOT23

• Function: Step-Up
• Output Configuration: Positive
• Topology: Boost
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 0.9V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Current - Output: 400mA (Switch)
• Frequency - Switching: 100kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

ZTL432AQFTA

Diodes Incorporated

IC VREF SHUNT ADJ SOT23

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Current - Output: 100mA
• Tolerance: ±1%
• Temperature Coefficient: 121ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 600µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

PS8A0086WEX

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

DGD2113S16-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 16SO

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 2.5A, 2.5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 15ns, 13ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SO

パッケージ: 16-SOIC (0.295", 7.50mm Width)

74LVC1G125SE-7

Diodes Incorporated

IC BUFF/DVR TRI-ST 1BIT SOT353

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

AZ4580GTR-G1

Diodes Incorporated

IC OP AMP GP DUAL 8-TSSOP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 7 V/µs
• Gain Bandwidth Product: 15MHz
• -3db Bandwidth: -
• Current - Input Bias: 150nA
• Voltage - Input Offset: 500µV
• Current - Supply: 4mA
• Current - Output / Channel: 80mA
• Voltage - Supply, Single/Dual (±): ±2 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

PI3VDP8200ZBEX

Diodes Incorporated

ACTIVE DISPLAY V-QFN8080H84-56

• Applications: -
• Interface: -
• Voltage - Supply: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

パッケージ: -

PS398CSE

Diodes Incorporated

IC MULTIPLEXER 8X1 16SOIC

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 100 Ohm
• Channel-to-Channel Matching (ΔRon): 6 Ohm (Max)
• Voltage - Supply, Single (V+): 3 V ~ 15 V
• Voltage - Supply, Dual (V±): ±3 V ~ 8 V
• Switch Time (Ton, Toff) (Max): 150ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 2.8pC
• Channel Capacitance (CS(off), CD(off)): 3.6pF, 31pF
• Current - Leakage (IS(off)) (Max): 50nA
• Crosstalk: -92dB @ 100kHz
• Operating Temperature: -
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.295", 7.50mm Width)

PI5A121CE

Diodes Incorporated

IC ANALOG SWITCH SPST NO SC70-5

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 10 Ohm
• Channel-to-Channel Matching (ΔRon): 200 mOhm
• Voltage - Supply, Single (V+): 2 V ~ 6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 15ns, 7ns
• -3db Bandwidth: 326MHz
• Charge Injection: 1.6pC
• Channel Capacitance (CS(off), CD(off)): 5.5pF, 5.5pF
• Current - Leakage (IS(off)) (Max): 200pA (Typ)
• Crosstalk: -43dB @ 10MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SC-70-5

パッケージ: 5-TSSOP, SC-70-5, SOT-353

P6KE82CA-T

Diodes Incorporated

TVS DIODE 70.1VWM 113VC DO15

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70.1V
• Voltage - Breakdown (Min): 77.9V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 5.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

パッケージ: DO-204AC, DO-15, Axial

P6KE91A-T

Diodes Incorporated

TVS DIODE 77.8VWM 125VC DO15

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 77.8V
• Voltage - Breakdown (Min): 86.5V
• Voltage - Clamping (Max) @ Ipp: 125V
• Current - Peak Pulse (10/1000µs): 4.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

パッケージ: DO-204AC, DO-15, Axial

PT8A3252PEX

Diodes Incorporated

HEATER CONTROLLER DIP-16

• Applications: Heating Controller
• Current - Supply: -
• Voltage - Supply: 4 V ~ 6 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

AP1501A-12T5G-U

Diodes Incorporated

IC REG BUCK 12V 5A TO220-5

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 12V
• Voltage - Output (Max): -
• Current - Output: 5A
• Frequency - Switching: 150kHz
• Synchronous Rectifier: No
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-220-5
• Supplier Device Package: TO-220-5

パッケージ: -

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DMN3060LVT-7

Diodes Incorporated

MOSFET 2N-CH 30V 3.6A TSOT26

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
• Power - Max: 830mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-26

パッケージ: -

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ZXT13N50DE6QTA

Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT26 T&R

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4 A
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 230mV @ 100mA, 4A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.1 W
• Frequency - Transition: 115MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

パッケージ: -

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DDZ9714Q-13

Diodes Incorporated

DIODE ZENER 33V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 33 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50 nA @ 25 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: -

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BZT52HC10WFQ-7

Diodes Incorporated

Zener Diode SOD123F T&R 3K

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±6%
• Power - Max: 375 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 200 nA @ 7 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

パッケージ: -

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DZ23C12Q-7-F

Diodes Incorporated

ZENER DIODE SOT23

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±5.41%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 9 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: -

DMP22D5UFB4Q-7R

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 460mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

パッケージ: -

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RS1J-13-G

Diodes Incorporated

DIODE GENERAL PURPOSE SMA

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

パッケージ: -

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DMTH41M8SPS-13

Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.03W
• Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8 (Type K)
• Package / Case: 8-PowerTDFN

パッケージ: -

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