ページ 90 - Diodes Incorporated 製品 | Heisener Electronics
連絡先
SalesDept@heisener.com 86-755-83210559-841
Language Translation

* Please refer to the English Version as our Official Version.

Diodes Incorporated 製品

レコード 22,098
ページ  90/790
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
KD3270036
Diodes Incorporated

OSCILLATOR XO 32.768KHZ CMOS SMD

  • Type: XO (Standard)
  • Frequency: 32.768kHz
  • Function: Enable/Disable
  • Output: CMOS
  • Voltage - Supply: 1.8V
  • Frequency Stability: ±50ppm
  • Operating Temperature: -20°C ~ 70°C
  • Current - Supply (Max): 300µA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
  • Height - Seated (Max): 0.053" (1.35mm)
パッケージ: 4-SMD, No Lead
在庫4,212
hot DMN3050S-7
Diodes Incorporated

MOSFET N-CH 30V 5.2A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫390,420
DMN80H2D0SCTI
Diodes Incorporated

MOSFET BVDSS: 651V 800V ITO-220A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1253pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
パッケージ: TO-220-3 Full Pack, Isolated Tab
在庫3,440
DMPH4015SK3-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫4,752
hot DMN3018SSS-13
Diodes Incorporated

MOSFET N CH 30V 7.3A 8-SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫360,000
hot FZT751QTA
Diodes Incorporated

TRANS PNP 60V 3A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 3W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: TO-261-4, TO-261AA
在庫2,000
hot ZXTP03200BZTA
Diodes Incorporated

TRANS PNP 200V 2A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 1.1W
  • Frequency - Transition: 105MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
パッケージ: TO-243AA
在庫40,980
hot ZTX1053A
Diodes Incorporated

TRANS NPN 75V 3A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
パッケージ: E-Line-3
在庫389,868
1N5224B-T
Diodes Incorporated

DIODE ZENER 2.8V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 2.8V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 75µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
パッケージ: DO-204AH, DO-35, Axial
在庫4,336
hot DDZ26-7
Diodes Incorporated

DIODE ZENER 26V 500MW SOD123

  • Voltage - Zener (Nom) (Vz): 26V
  • Tolerance: ±2.5%
  • Power - Max: 310mW
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 21V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
パッケージ: SOD-123
在庫1,525,200
BZX84C3V3TS-7-F
Diodes Incorporated

DIODE ZENER ARRAY 3.3V SOT363

  • Configuration: 3 Independent
  • Voltage - Zener (Nom) (Vz): 3.3V
  • Tolerance: ±6%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 95 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫2,080
SBRT4U60LP-7
Diodes Incorporated

DIODE SBR 60V 4A U-DFN3030-8

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 4A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Capacitance @ Vr, F: 180pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: U-DFN3030-8
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: 8-PowerUDFN
在庫2,688
hot KBP206G
Diodes Incorporated

RECT BRIDGE GPP 600V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
パッケージ: 4-SIP, KBP
在庫103,896
AP7362-33SP-13
Diodes Incorporated

IC REG LINEAR 3.3V 1.5A 8SO

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 1.5A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.3mA
  • PSRR: 65dB ~ 61dB (120Hz ~ 1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SO-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫5,120
ZRC330A02STOA
Diodes Incorporated

IC VREF SHUNT 3.3V TO92-3

  • Reference Type: Shunt
  • Output Type: Fixed
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Current - Output: 5mA
  • Tolerance: ±2%
  • Temperature Coefficient: 50ppm/°C
  • Noise - 0.1Hz to 10Hz: -
  • Noise - 10Hz to 10kHz: 43µVrms
  • Voltage - Input: -
  • Current - Supply: -
  • Current - Cathode: 20µA
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫2,880
hot 74LVC2G14DW-7
Diodes Incorporated

IC INVERTER GATE DUAL SOT363

  • Logic Type: Inverter
  • Number of Circuits: 2
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 40µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: 0.25 V ~ 1.2 V
  • Logic Level - High: 1.5 V ~ 3.6 V
  • Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-363
  • Package / Case: 6-TSSOP, SC-88, SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫36,000
74HCT14T14-13
Diodes Incorporated

IC INVERTER GATE HEX 14TSSOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Max): 20µA
  • Current - Output High, Low: 4mA, 4mA
  • Logic Level - Low: 0.5 V ~ 0.6 V
  • Logic Level - High: 1.9 V ~ 2.1 V
  • Max Propagation Delay @ V, Max CL: 34ns @ 4.5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
パッケージ: 14-TSSOP (0.173", 4.40mm Width)
在庫7,984
PI90LVB022LE
Diodes Incorporated

IC MULTIPLEXER LVDS 1CH 16TSSOP

  • Type: Buffer, Multiplexer
  • Applications: LVDS
  • Input: LVDS
  • Output: LVDS
  • Data Rate (Max): 650Mbps
  • Number of Channels: 1 x 2:2
  • Delay Time: 4.0ns
  • Signal Conditioning: -
  • Capacitance - Input: 8pF
  • Voltage - Supply: 3 V ~ 3.6 V
  • Current - Supply: 21mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: -
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
パッケージ: 16-TSSOP (0.173", 4.40mm Width)
在庫3,296
PI5A393AP
Diodes Incorporated

IC SWITCH QUAD SPST 16DIP

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 18 Ohm
  • Channel-to-Channel Matching (ΔRon): 400 mOhm
  • Voltage - Supply, Single (V+): 2 V ~ 6 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 20ns, 10ns
  • -3db Bandwidth: 200MHz
  • Charge Injection: 5pC
  • Channel Capacitance (CS(off), CD(off)): 13pF
  • Current - Leakage (IS(off)) (Max): 30nA
  • Crosstalk: -72dB @ 30MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
パッケージ: 16-DIP (0.300", 7.62mm)
在庫2,100
PI49FCT3805AS
Diodes Incorporated

IC CLK BUFFER 1:5 66MHZ 20SOIC

  • Type: Fanout Buffer (Distribution)
  • Number of Circuits: 2
  • Ratio - Input:Output: 1:5
  • Differential - Input:Output: No/No
  • Input: CMOS, TTL
  • Output: CMOS
  • Frequency - Max: 66MHz
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
パッケージ: 20-SOIC (0.295", 7.50mm Width)
在庫4,816
SMBJ60CA-13-F
Diodes Incorporated

TVS DIODE 60VWM 96.8VC SMB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 60V
  • Voltage - Breakdown (Min): 66.7V
  • Voltage - Clamping (Max) @ Ipp: 96.8V
  • Current - Peak Pulse (10/1000µs): 6.2A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
パッケージ: DO-214AA, SMB
在庫2,034
AH3774-W-7
Diodes Incorporated

MAGNETIC SWITCH LATCH SC59

  • Function: Latch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 6mT Trip, -6mT Release
  • Test Condition: -40°C ~ 125°C
  • Voltage - Supply: 3 V ~ 28 V
  • Current - Supply (Max): 4mA
  • Current - Output (Max): 60mA
  • Output Type: Open Drain
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫2,088
PS8A0083PEX
Diodes Incorporated

HEATER CONTROLLER DIP-8

  • Applications: -
  • Current - Supply: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,808
B380-13-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 80 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: -
Request a Quote
BAT54Q-7-F
Diodes Incorporated

DIODE SCHOTT 30V 200MA SOT23 3K

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: -
在庫36,000
DSC08C065
Diodes Incorporated

SILICON CARBIDE RECTIFIER TO220A

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 650 V
  • Capacitance @ Vr, F: 272pF @ 100mV, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
LSP5503L-R8A
Diodes Incorporated

IC REG BUCK ADJUSTABLE 3A 8SOP

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 4.5V
  • Voltage - Input (Max): 23V
  • Voltage - Output (Min/Fixed): 0.925V
  • Voltage - Output (Max): 18.4V
  • Current - Output: 3A
  • Frequency - Switching: 340kHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -20°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOP-EP
パッケージ: -
Request a Quote
DMT10H072LDV-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
パッケージ: -
Request a Quote