ページ 161 - ダイオード - ブリッジ整流器 | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - ブリッジ整流器

レコード 7,565
ページ  161/271
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説明
パッケージ
在庫
数量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3SBMB05F
Semtech Corporation

BRIDGE RECT 3A 50V PCB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: -
パッケージ: 4-SIP
在庫6,240
Standard
50V
3A
1.1V @ 3A
2µA @ 50V
-
Through Hole
4-SIP
-
3SBMB1F
Semtech Corporation

BRIDGE RECT 3A 100V PCB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: -
パッケージ: 4-SIP
在庫7,072
Standard
100V
3A
1.1V @ 3A
2µA @ 100V
-
Through Hole
4-SIP
-
hot VUO62-18NO7
IXYS

RECT BRIDGE 3PH 63A 1800V PWS-D

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 63A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-D
  • Supplier Device Package: PWS-D
パッケージ: PWS-D
在庫5,184
Standard
1800V
63A
1.8V @ 150A
300µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-D
PWS-D
GBPC5002W
GeneSiC Semiconductor

DIODE BRIDGE 200V 50A GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
パッケージ: 4-Square, GBPC-W
在庫6,736
Standard
200V
50A
1.2V @ 25A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
KBPC5006W
GeneSiC Semiconductor

DIODE BRIDGE 600V 50A KBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
パッケージ: 4-Square, KBPC-W
在庫7,632
Standard
600V
50A
1.1V @ 25A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-W
KBPC-W
BR502L-G
Comchip Technology

RECTIFIER BRIDGE 200V 50A BR-L

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, with Heat Sink
  • Supplier Device Package: BR-L
パッケージ: 4-SIP, with Heat Sink
在庫3,264
Standard
200V
50A
1.1V @ 25A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, with Heat Sink
BR-L
TS10P05G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: 4-SIP, TS-6P
在庫3,072
Standard
600V
10A
1.1V @ 10A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
BU1208-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 12A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
パッケージ: 4-SIP, BU
在庫3,584
Standard
800V
3.4A
1.05V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
KBJ410G
Diodes Incorporated

RECT BRIDGE GPP 4A 1000V KBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
パッケージ: 4-SIP, KBJ
在庫2,368
Standard
1000V
4A
1V @ 2A
5µA @ 1000V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ
TS6P02G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: 4-SIP, TS-6P
在庫3,856
Standard
100V
6A
1.1V @ 6A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
hot DF1501S
Diodes Incorporated

RECT BRIDGE 100V 1.5A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DF-S
パッケージ: 4-SMD, Gull Wing
在庫6,336
Standard
100V
1.5A
1.1V @ 1.5A
10µA @ 100V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DF-S
ABS10HREG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
パッケージ: 4-SMD, Gull Wing
在庫7,056
Standard
1000V
800mA
950mV @ 400mA
10µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
hot GBU1006
Diodes Incorporated

RECT BRIDGE GPP 10A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: 4-SIP, GBU
在庫26,676
Standard
600V
10A
1V @ 5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GHXS010A060S-D1E
Global Power Technologies Group

MOD SBD BRIDGE 600V 10A SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫7,792
Silicon Carbide Schottky
600V
10A
1.7V @ 10A
100µA @ 600V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
KBJ610_T0_00601
Panjit International Inc.

KBJ PACKAGE, 6A/1000V STANDARD B

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ-2
  • Supplier Device Package: KBJ-2
パッケージ: -
在庫29,859
Standard
1 kV
6 A
1.05 V @ 3 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ-2
KBJ-2
GBJA810-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JA
  • Supplier Device Package: JA
パッケージ: -
Request a Quote
Standard
1 kV
8 A
1.1 V @ 4 A
5 µA @ 1000 V
-55°C ~ 150°C
Through Hole
4-SIP, JA
JA
NTE53000
NTE Electronics, Inc

BRIDGE-200VRM 10A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
Standard
200 V
10 A
1.1 V @ 5 A
10 µA @ 200 V
-65°C ~ 125°C (TJ)
-
-
-
MBL4S-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 500 mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: MBLS-1
パッケージ: -
Request a Quote
Standard
400 V
500 mA
1 V @ 400 mA
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
MBLS-1
W02MG-G
Comchip Technology

BRIDGE RECT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOBM
  • Supplier Device Package: WOBM
パッケージ: -
Request a Quote
Standard
200 V
1.5 A
1.1 V @ 1.5 A
10 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-Circular, WOBM
WOBM
GBJ5008-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
パッケージ: -
Request a Quote
Standard
800 V
50 A
1.1 V @ 25 A
10 µA @ 800 V
-55°C ~ 150°C
Through Hole
4-SIP, GBJ
GBJ
DBL151G
Taiwan Semiconductor Corporation

DIODE BRIDGE 1.5A 50V DBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
パッケージ: -
Request a Quote
Standard
50 V
1.5 A
1.1 V @ 1.5 A
2 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
GBJ25L08
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBJ TUB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
パッケージ: -
Request a Quote
Standard
800 V
25 A
900 mV @ 12.5 A
10 µA @ 800 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBL06L-5303E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
RBV5006
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 50A 600V, CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
パッケージ: -
Request a Quote
Standard
600 V
50 A
1.1 V @ 25 A
10 µA @ 600 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
TBS22A-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 2.2 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TBS
パッケージ: -
Request a Quote
Standard
50 V
2.2 A
950 mV @ 2 A
5 µA @ 50 V
-55°C ~ 150°C
Surface Mount
4-SMD, Flat Leads
4-TBS
GBL06L-5308E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBU4DL-6419M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 200V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
200 V
3 A
1 V @ 4 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
RPMS310_R2_00601
Panjit International Inc.

M4 PACKAGE,SURFACE MOUNT GLASS P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: M4
パッケージ: -
在庫26,964
Standard
1 kV
3 A
1.3 V @ 1.5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
M4