ページ 198 - ダイオード - ブリッジ整流器 | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - ブリッジ整流器

レコード 7,565
ページ  198/271
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パッケージ
在庫
数量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DBA100G-K15
ON Semiconductor

DIODE BRIDGE 1PH 10A 600V SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.7A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
パッケージ: 4-Square, GBPC-W
在庫3,216
Standard
600V
3.7A
1.05V @ 5A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
2KBP08M-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 800V 1PH 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
パッケージ: 4-SIP, KBPM
在庫6,752
Standard
800V
2A
1.1V @ 3.14A
5µA @ 800V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot 2W08G
Diodes Incorporated

RECT BRIDGE GPP 8A 100V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
パッケージ: 4-Circular, WOG
在庫15,588
Standard
800V
2A
1.1V @ 2A
5µA @ 800V
-65°C ~ 150°C (TJ)
Through Hole
4-Circular, WOG
WOG
hot VUO82-16NO7
IXYS

3-PHASE RECTIFIER BRIDGE

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 88A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-D
  • Supplier Device Package: PWS-D
パッケージ: PWS-D
在庫7,380
Standard
1600V
88A
1.6V @ 150A
300µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-D
PWS-D
PB61
Micro Commercial Co

RECTIFIER BRIDGE 6A 100V PB-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, PB-6
  • Supplier Device Package: PB-6
パッケージ: 4-Square, PB-6
在庫3,504
Standard
100V
6A
1.1V @ 3A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, PB-6
PB-6
VBO130-12NO7
IXYS

DIODE BRIDGE 122A 1200V FO-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 122A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E
  • Supplier Device Package: PWS-E
パッケージ: PWS-E
在庫2,928
Standard
1200V
122A
1.1V @ 120A
200µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-E
PWS-E
GBPC1504W T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
パッケージ: 4-Square, GBPC-W
在庫4,464
Standard
400V
15A
1.1V @ 7.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC1510T
GeneSiC Semiconductor

DIODE BRIDGE 1000V 15A GBPC-T

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
パッケージ: 4-Square, GBPC
在庫6,432
Standard
1000V
15A
1.1V @ 7.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC
GBPC
TS20P01G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: 4-SIP, TS-6P
在庫7,024
Standard
50V
20A
1.1V @ 20A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GSIB1560N-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 15A 600V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
パッケージ: 4-SIP, GSIB-5S
在庫2,496
Standard
600V
15A
950mV @ 7.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
hot GBU6M-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 6A 1000V GPP INLINE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3.8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: 4-SIP, GBU
在庫17,652
Standard
1000V
3.8A
1V @ 6A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot KBJ406G
GeneSiC Semiconductor

DIODE BRIDGE 600V 4A KBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
パッケージ: 4-SIP, KBJ
在庫158,268
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ
BR61
GeneSiC Semiconductor

DIODE BRIDGE 100V 6A BR-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-6
  • Supplier Device Package: BR-6
パッケージ: 4-Square, BR-6
在庫3,968
Standard
100V
6A
1V @ 3A
10µA @ 100V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-6
BR-6
MB2M-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 0.5A 200V MBM 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.500", 12.70mm)
  • Supplier Device Package: MBM
パッケージ: 4-DIP (0.500", 12.70mm)
在庫2,320
Standard
200V
500mA
1V @ 400mA
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.500", 12.70mm)
MBM
ABS6-G
Comchip Technology

RECTIFIER BRIDGE 600V 1A ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
パッケージ: 4-SMD, Gull Wing
在庫2,016
Standard
600V
1A
1.1V @ 1A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
DB153STR
SMC Diode Solutions

BRIDGE RECT 1PH 200V 1.5A DB-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DB-S
パッケージ: 4-SMD, Gull Wing
在庫6,288
Standard
200V
1.5A
1.1V @ 1.5A
5µA @ 200V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DB-S
GBJ2502-F
Diodes Incorporated

RECT BRIDGE GPP 25A 200V GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
パッケージ: 4-SIP, GBJ
在庫6,208
Standard
200V
25A
1.05V @ 12.5A
10µA @ 200V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
M5060SB400
Crydom Co.

MODULE POWER 60A 400V BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫6,112
Standard
400V
60A
1.35V @ 50A
-
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
M5060SB600
Crydom Co.

MODULE POWER 60A 600V BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫6,504
Standard
600V
60A
1.35V @ 50A
-
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
DBLS105GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 1A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
パッケージ: -
在庫9,000
Standard
600 V
1 A
1.1 V @ 1 A
2 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
NTE5322
NTE Electronics, Inc

R-SI BRIDGE 200V 25A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square
  • Supplier Device Package: -
パッケージ: -
Request a Quote
Standard
200 V
25 A
1.1 V @ 12.5 A
10 µA @ 200 V
-55°C ~ 125°C (TJ)
QC Terminal
4-Square
-
HDBLS106GH
Taiwan Semiconductor Corporation

75NS, 1A, 800V, HIGH EFFICIENT R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
パッケージ: -
在庫9,000
Standard
800 V
1 A
1.7 V @ 1 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
MT5014A-BP
Micro Commercial Co

Interface

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.4 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, MT-35A
  • Supplier Device Package: MT-35A
パッケージ: -
Request a Quote
Standard
1.4 kV
50 A
1.2 V @ 25 A
10 µA @ 1400 V
-55°C ~ 150°C
Chassis Mount
5-Square, MT-35A
MT-35A
DCG20B650LB-TUB
IXYS

BIPOLAR MODULE-BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
パッケージ: -
Request a Quote
Silicon Carbide Schottky
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
CSPB60K-HF
Comchip Technology

BRIDGE RECTIFIER 800V 6A SPB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-SPB
パッケージ: -
Request a Quote
Standard
800 V
6 A
1 V @ 6 A
1 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-SPB
DF2010S
Surge

2A -1000V - DFS - BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
パッケージ: -
Request a Quote
Standard
1 kV
2 A
1.2 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
UABF1510-13
Diodes Incorporated

BRIDGE RECT 1P 1KV 1.5A 4SOPA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SOPA
パッケージ: -
Request a Quote
Standard
1 kV
1.5 A
1.3 V @ 1.5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SOPA
GBU6ML-5301E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3.8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 3.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
1 kV
3.8 A
1 V @ 6 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU