ページ 230 - ダイオード - ブリッジ整流器 | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - ブリッジ整流器

レコード 7,565
ページ  230/271
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パッケージ
在庫
数量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
GBPC2510
Diodes Incorporated

RECT BRIDGE GPP 1000V 25A GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
パッケージ: 4-Square, GBPC
在庫5,312
Standard
1000V
25A
1.1V @ 12.5A
5µA @ 1000V
-65°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
3N246-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 1.5A 50V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
パッケージ: 4-SIP, KBPM
在庫3,264
Standard
50V
1.5A
1V @ 1A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
RS402LDI-F
Diodes Incorporated

RECT BRIDGE GPP 100V 4A RS-4L

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-4L
  • Supplier Device Package: RS-4L
パッケージ: 4-SIP, RS-4L
在庫2,272
Standard
100V
4A
1V @ 3A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, RS-4L
RS-4L
MB1510W-BP
Micro Commercial Co

RECT BRIDGE 15A 1000V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
パッケージ: 4-Square, MB-35W
在庫7,840
Standard
1000V
15A
1.2V @ 7.5A
10µA @ 1000V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
GBPC3501/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 35A 100V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
パッケージ: 4-Square, GBPC
在庫7,440
Standard
100V
35A
1.1V @ 17.5A
5µA @ 100V
-
QC Terminal
4-Square, GBPC
GBPC
BR35005W-G
Comchip Technology

BRIDGE DIODE 35A 50V BR-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-W
  • Supplier Device Package: BR-W
パッケージ: 4-Square, BR-W
在庫4,640
Standard
50V
35A
1.1V @ 12.5A
10µA @ 50V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, BR-W
BR-W
TS40P05GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 40A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: 4-SIP, TS-6P
在庫3,296
Standard
600V
40A
1.1V @ 20A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBJ25005-G-05
Comchip Technology

RECTIFIER BRIDGE 25A 50V GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
パッケージ: 4-SIP, GBJ
在庫7,424
Standard
50V
25A
1V @ 12.5A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
TS6P06GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: 4-SIP, TS-6P
在庫3,200
Standard
800V
6A
1.1V @ 6A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBL08HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: 4-SIP, GBL
在庫4,720
Standard
800V
4A
1.1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBLA10-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 1000V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: 4-SIP, GBL
在庫3,312
Standard
1000V
3A
1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
G2SBA60-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: 4-SIP, GBL
在庫6,080
Standard
600V
1.5A
1V @ 750mA
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
VS-KBPC106
Vishay Semiconductor Diodes Division

BRIDGE RECTIFIER 600V 3.0A D-46

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
パッケージ: 4-Square, D-72
在庫7,872
Standard
600V
3A
1.1V @ 1.5A
-
-40°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
GBPC3501W-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
パッケージ: -
Request a Quote
Standard
100 V
35 A
1.1 V @ 17.5 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBU8K-3M3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
800 V
3.9 A
1 V @ 8 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBPF207G-B0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 2A KBPF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPF
  • Supplier Device Package: KBPF
パッケージ: -
Request a Quote
Standard
1 kV
2 A
1.1 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPF
KBPF
GBU12A-T
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 8.4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
50 V
8.4 A
1 V @ 12 A
5 µA @ 50 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
DF20NA160-S
SanRex Corporation

DIOE MODULE 1600V 20A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Current - Reverse Leakage @ Vr: 8 mA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 5-SIP Exposed Pad
  • Supplier Device Package: 5-SIP
パッケージ: -
Request a Quote
Standard
1.6 kV
20 A
1.2 V @ 20 A
8 mA @ 1600 V
-40°C ~ 150°C (TJ)
Through Hole
5-SIP Exposed Pad
5-SIP
DBF20C
onsemi

BRIDGE RECTIFIER DIODE, 2A, 200V

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
GBU4JL-BP
Micro Commercial Co

BRIDGE RECT 1PHASE 600V 4A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
在庫2,199
Standard
600 V
4 A
900 mV @ 4 A
10 µA @ 600 V
-55°C ~ 150°C
Through Hole
4-SIP, GBU
GBU
GBLA08
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: -
Request a Quote
Standard
800 V
4 A
1 V @ 4 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
DBL201G
Taiwan Semiconductor Corporation

DIODE BRIDGE 2A 50V DBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
パッケージ: -
Request a Quote
Standard
50 V
2 A
1.15 V @ 2 A
2 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
GBJA606-BP
Micro Commercial Co

DIODE BRIDGE 6A JA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JA
  • Supplier Device Package: JA
パッケージ: -
Request a Quote
Standard
600 V
6 A
1.1 V @ 3 A
10 µA @ 600 V
-55°C ~ 150°C
Through Hole
4-SIP, JA
JA
679-5
Microchip Technology

BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 500 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
  • Current - Reverse Leakage @ Vr: 20 µA @ 500 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, NB
  • Supplier Device Package: NB
パッケージ: -
Request a Quote
Standard
500 V
25 A
1.2 V @ 10 A
20 µA @ 500 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square, NB
NB
DPG60B600LB-TRR
IXYS

BIPOLAR MODULE-BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 60 A
  • Voltage - Forward (Vf) (Max) @ If: 3.19 V @ 60 A
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
パッケージ: -
Request a Quote
Standard
600 V
60 A
3.19 V @ 60 A
250 µA @ 600 V
-55°C ~ 175°C (TJ)
Surface Mount
9-PowerSMD
9-SMPD-B
469-1
Microchip Technology

SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 15.7 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square
  • Supplier Device Package: -
パッケージ: -
Request a Quote
Standard
200 V
10 A
1.35 V @ 15.7 A
2 µA @ 200 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square
-
GBL08E-E3-P
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2.6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: -
Request a Quote
Standard
800 V
2.6 A
1 V @ 4 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBU2508LL_T0_00601
Panjit International Inc.

GLASS PASSIVATED LOW VF BRIDGE R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU-2
パッケージ: -
Request a Quote
Standard
800 V
25 A
950 mV @ 12.5 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU-2