ページ 40 - ダイオード - ブリッジ整流器 | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - ブリッジ整流器

レコード 7,565
ページ  40/271
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部品番号
メーカ
説明
パッケージ
在庫
数量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CBR6F-020
Central Semiconductor Corp

RECT BRIDGE

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,792
-
-
-
-
-
-
-
-
-
3N259-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 1000V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
パッケージ: 4-SIP, KBPM
在庫6,448
Standard
1000V
2A
1.1V @ 3.14A
5µA @ 1000V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
VBO55-18NO7
IXYS

DIODE BRIDGE 1800V 55A FO-T-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 55A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
  • Supplier Device Package: FO-T-A
パッケージ: FO-T-A
在庫2,384
Standard
1800V
55A
1.6V @ 150A
500µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
FO-T-A
FO-T-A
90MT140KB
Vishay Semiconductor Diodes Division

RECT BRIDGE 1400V 90A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
パッケージ: MTK
在庫6,528
Standard
1400V
90A
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
MTK
MTK
70MT120KB
Vishay Semiconductor Diodes Division

RECT BRIDGE 1200V 70A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
パッケージ: MTK
在庫5,552
Standard
1200V
70A
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
MTK
MTK
GBPC1202/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 12A 200V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
パッケージ: 4-Square, GBPC
在庫3,520
Standard
200V
12A
1.1V @ 6A
5µA @ 200V
-
QC Terminal
4-Square, GBPC
GBPC
SC3BK2F
Semtech Corporation

BRIDGE RECT 11A 200V

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A
  • Current - Reverse Leakage @ Vr: 9µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 5-Rectangle
  • Supplier Device Package: -
パッケージ: 5-Rectangle
在庫4,880
Standard
200V
11A
1.1V @ 9A
9µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
5-Rectangle
-
hot VUO52-18NO1
IXYS

RECT BRIDGE 3PH 54A 1800V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 54A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
  • Current - Reverse Leakage @ Vr: 40µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
パッケージ: V1-A
在庫6,192
Standard
1800V
54A
1.13V @ 20A
40µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
V1-A
V1-A
VUO18-14DT8
IXYS

RECT BRIDGE 18A 1400V FO-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, FO-B
  • Supplier Device Package: FO-B
パッケージ: 5-Square, FO-B
在庫6,832
Standard
1400V
18A
1.85V @ 55A
300µA @ 1400V
-40°C ~ 150°C (TJ)
QC Terminal
5-Square, FO-B
FO-B
BU2508-M3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 800V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
パッケージ: 4-SIP, BU
在庫5,856
Standard
800V
25A
1.05V @ 12.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
BU15105S-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 15A 1000V BU-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU-5S
  • Supplier Device Package: isoCINK+? BU-5S
パッケージ: 4-SIP, BU-5S
在庫2,064
Standard
1000V
15A
1.05V @ 7.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU-5S
isoCINK+? BU-5S
GSIB1580N-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 15A 800V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
パッケージ: 4-SIP, GSIB-5S
在庫6,976
Standard
800V
15A
950mV @ 7.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GBU403HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: 4-SIP, GBU
在庫2,352
Standard
200V
4A
1.1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBU1001-G
Comchip Technology

RECTIFIER BRIDGE 10A 100V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
パッケージ: 4-SIP, KBU
在庫4,032
Standard
100V
10A
1V @ 5A
10µA @ 100V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBU1002
GeneSiC Semiconductor

DIODE BRIDGE 200V 10A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
パッケージ: 4-SIP, KBU
在庫3,056
Standard
200V
10A
1.05V @ 10A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
DBLS158GHRDG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Current - Reverse Leakage @ Vr: 2µA @ 1200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
パッケージ: 4-SMD, Gull Wing
在庫4,000
Standard
1200V
1.5A
1.25V @ 1.5A
2µA @ 1200V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
GBJ804-F
Diodes Incorporated

RECT BRIDGE GPP 8A 400V THR-HOLE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
パッケージ: 4-SIP, GBJ
在庫4,240
Standard
400V
8A
1V @ 4A
5µA @ 400V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBPC1206W
Fairchild/ON Semiconductor

RECT BRIDGE GPP 12A 600V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
パッケージ: 4-Square, GBPC-W
在庫5,472
Standard
600V
12A
1.1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
ABS210TR
SMC Diode Solutions

BRIDGE RECT 1PHASE 1KV 2A ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
パッケージ: 4-SMD, Gull Wing
在庫47,244
Standard
1000V
2A
1.1V @ 2A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
DFB2060
Fairchild/ON Semiconductor

IC BRIDGE RECT 600V 20A 4-SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: 4-SIP, TS-6P
在庫15,630
Standard
600V
20A
1.1V @ 20A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
LVE2560E-M3-P
Vishay General Semiconductor - Diodes Division

600V, 25A LOW VF, SINGLE IN LINE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
パッケージ: -
在庫3,531
Standard
600 V
4 A
920 mV @ 12.5 A
10 µA @ 600 V
-55°C ~ 150°C
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GBU6JL-5306M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
600 V
3.8 A
1 V @ 6 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJ2504-06-G
Comchip Technology

BRIDGE RECT 1PHASE 400V 25A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
パッケージ: -
Request a Quote
Standard
400 V
25 A
1 V @ 12.5 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
UD4KB10-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: D3K
パッケージ: -
Request a Quote
Standard
100 V
4 A
1 V @ 2 A
10 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP
D3K
BR2502
EIC SEMICONDUCTOR INC.

STD 25A, CASE TYPE: BR50

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, BR-50
  • Supplier Device Package: BR-50
パッケージ: -
Request a Quote
Standard
200 V
25 A
1.1 V @ 12.5 A
10 µA @ 200 V
-40°C ~ 150°C (TJ)
Chassis Mount
4-Square, BR-50
BR-50
KBJA1008-BP
Micro Commercial Co

DIODE BRIDGE 10A JB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JB
  • Supplier Device Package: JB
パッケージ: -
Request a Quote
Standard
800 V
10 A
1.1 V @ 5 A
10 µA @ 800 V
-55°C ~ 150°C
Through Hole
4-SIP, JB
JB
DB107SP-HF
Comchip Technology

BRIDGE RECT 1PHASE 1KV 1A DBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBS
パッケージ: -
Request a Quote
Standard
1 kV
1 A
1.1 V @ 1 A
10 µA @ 1000 V
-55°C ~ 150°C
Surface Mount
4-SMD, Gull Wing
DBS
TS35P07G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 35A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: -
在庫1,236
Standard
1 kV
35 A
1.1 V @ 17.5 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P