ページ 554 - ダイオード - 整流器 - アレイ | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - 整流器 - アレイ

レコード 16,443
ページ  554/588
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部品番号
メーカ
説明
パッケージ
在庫
数量
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
CPT60035
Microsemi Corporation

DIODE MODULE 35V 300A TO244AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8mA @ 35V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
パッケージ: TO-244AB
在庫2,832
Schottky
35V
300A
650mV @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 35V
-
Chassis Mount
TO-244AB
TO-244AB
hot MBRF20200CT
ON Semiconductor

DIODE ARRAY SCHOTTKY 200V TO220F

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
パッケージ: TO-220-3 Full Pack
在庫523,740
Schottky
200V
10A
900mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
-65°C ~ 150°C
Through Hole
TO-220-3 Full Pack
TO-220FP
hot IRKJ56/04A
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 60A ADD-A-PAK

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 400V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: ADD-A-PAK (2)
  • Supplier Device Package: ADD-A-PAK?
パッケージ: ADD-A-PAK (2)
在庫3,648
Standard
400V
60A
-
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 400V
-
Chassis Mount
ADD-A-PAK (2)
ADD-A-PAK?
VS-VSKD270-30PBF
Vishay Semiconductor Diodes Division

DIODE GEN 3KV 135A MAGNAPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3000V
  • Current - Average Rectified (Io) (per Diode): 135A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 3000V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: MAGN-A-PAK (2)
  • Supplier Device Package: MAGN-A-PAK?
パッケージ: MAGN-A-PAK (2)
在庫4,272
Standard
3000V
135A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 3000V
-40°C ~ 150°C
Chassis Mount
MAGN-A-PAK (2)
MAGN-A-PAK?
DD171N08K
Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE MOD 1300V 270A

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,936
-
-
-
-
-
-
-
-
-
-
-
F1827RD1200
Crydom Co.

DIODE MODULE 1.2KV 25A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 25A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 75A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫5,568
Standard
1200V
25A (DC)
1.55V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 125°C
Chassis Mount
Module
Module
MBRT600150
GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 150V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
パッケージ: Three Tower
在庫7,696
Schottky
150V
300A
880mV @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 150V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBRT60035
GeneSiC Semiconductor

DIODE MODULE 35V 600A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 600A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
パッケージ: Three Tower
在庫5,984
Schottky
35V
600A (DC)
750mV @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Chassis Mount
Three Tower
Three Tower
MBR60035CT
GeneSiC Semiconductor

DIODE MODULE 35V 300A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
パッケージ: Twin Tower
在庫3,584
Schottky
35V
300A
750mV @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Chassis Mount
Twin Tower
Twin Tower
VS-VSKD56/12
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 30A ADDAPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 1200V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: ADD-A-PAK (3)
  • Supplier Device Package: ADD-A-PAK?
パッケージ: ADD-A-PAK (3)
在庫3,040
Standard
1200V
30A
-
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 1200V
-40°C ~ 150°C
Chassis Mount
ADD-A-PAK (3)
ADD-A-PAK?
FEPB6DTHE3/81
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 200V 6A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 6A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,648
Standard
200V
6A
975mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
HER1006G C0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 10A, 600V

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫3,744
Standard
600V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 600V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
hot RSX1001T3
Rohm Semiconductor

DIODE ARRAY SCHOTTKY 30V TO220FN

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FN
パッケージ: TO-220-3 Full Pack
在庫17,076
Schottky
30V
5A
450mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
150°C (Max)
Through Hole
TO-220-3 Full Pack
TO-220FN
UB30CCT-E3/4W
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 150V 15A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 20µA @ 150V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫4,544
Standard
150V
15A
1.05V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
20µA @ 150V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
16CTQ150
SMC Diode Solutions

DIODE SCHOTTKY 150V 8A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 150V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫2,720
Schottky
150V
8A
800mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 150V
-55°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
hot MBR20100CT-E3/4W
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫4,496
Schottky
100V
10A
800mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-65°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
CMSSH-3S TR
Central Semiconductor Corp

DIODE SCHOTTKY 30V 100MA SMC

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: SC-70, SOT-323
在庫2,160
Schottky
30V
100mA (DC)
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
-65°C ~ 150°C
Surface Mount
SC-70, SOT-323
SOT-323
hot DA227TL
Rohm Semiconductor

DIODE ARRAY GP 80V 100MA UMD4

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 70V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: UMD4
パッケージ: SC-82A, SOT-343
在庫1,918,464
Standard
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 70V
150°C (Max)
Surface Mount
SC-82A, SOT-343
UMD4
SF2007PTH
Taiwan Semiconductor Corporation

DIODE ARRAY GP 500V 20A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io) (per Diode): 20A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
パッケージ: -
Request a Quote
Standard
500 V
20A (DC)
1.9 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 500 V
-55°C ~ 150°C
Through Hole
TO-247-3
TO-247AD (TO-3P)
NTE6086
NTE Electronics, Inc

DIODE ARRAY SCHOTTKY 10A TO220

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 100 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: -
Request a Quote
Schottky
-
10A
800 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 100 V
-65°C ~ 150°C
Through Hole
TO-220-3
TO-220
BAT54C_R1_00001
Panjit International Inc.

DIODE ARR SCHOTT 30V 200MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: -
在庫51,720
Schottky
30 V
200mA
600 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
2 µA @ 25 V
-55°C ~ 125°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
DD60KB80
SanRex Corporation

DIODE MODULE GP 800V 60A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 180 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 800 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
パッケージ: -
Request a Quote
Standard
800 V
60A
1.35 V @ 180 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 800 V
-40°C ~ 150°C
Chassis Mount
Module
-
V10KM100CHM3-H
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 100V 4.2A FLTPK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 4.2A
  • Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 100 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
パッケージ: -
Request a Quote
Schottky
100 V
4.2A
740 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 100 V
-40°C ~ 175°C
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
VX60M120C-M3-P
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 120V 30A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550 µA @ 120 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: -
Request a Quote
Schottky
120 V
30A
950 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
550 µA @ 120 V
-40°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
ADS065J040G3-ASATH
Luminus Devices Inc.

DIODE 650V-40A TO247-3L, COMMON

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 51A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3L
パッケージ: -
Request a Quote
SiC (Silicon Carbide) Schottky
650 V
51A
1.5 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247-3L
RB238T-30NZC9
Rohm Semiconductor

DIODE ARR SCHOTT 30V 40A TO220FN

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12 µA @ 30 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FN
パッケージ: -
在庫2,964
Schottky
30 V
40A
750 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
12 µA @ 30 V
150°C
Through Hole
TO-220-3 Full Pack
TO-220FN
V40DM150CHM3-I
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 150V 20A TO263AC

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 150 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
  • Supplier Device Package: TO-263AC (SMPD)
パッケージ: -
在庫978
Schottky
150 V
20A
1.47 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 150 V
-40°C ~ 175°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), Variant
TO-263AC (SMPD)
SBL1030CT801HE3-45
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 30V 5A TO220-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
パッケージ: -
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Schottky
30 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 30 V
-40°C ~ 125°C
Through Hole
TO-220-3
TO-220-3