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ダイオード - 整流器 - シングル

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在庫
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
UES2602
Microsemi Corporation

DIODE GEN PURP 100V 30A TO204AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 930mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 20µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-204AA, TO-3
在庫283
100V
30A
930mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
20µA @ 100V
-
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
-55°C ~ 175°C
1N4004GPEHE3/91
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: DO-204AL, DO-41, Axial
在庫475
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 400V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MBR1650HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 16A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: TO-220-3
在庫115
50V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 50V
-
Through Hole
TO-220-3
TO-220AB
-65°C ~ 150°C
MUR140-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: DO-204AC, DO-15, Axial
在庫409
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 400V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
hotSBL840
Diodes Incorporated

DIODE SCHOTTKY 40V 8A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: TO-220-2
在庫697
40V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
1N4934L-T
Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: DO-204AL, DO-41, Axial
在庫184
100V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
STTH312B
STMicroelectronics

DIODE GEN PURP 1.2KV 3A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 115ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: 175°C (Max)
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫492
1200V
3A
2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
115ns
10µA @ 1200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
175°C (Max)
TRA3225
ON Semiconductor

DIODE GP 250V 32A MICRODE BUTTON

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 32A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 250V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Microde Button
  • Supplier Device Package: Microde Button
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: Microde Button
在庫207
250V
32A
1.15V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
20µA @ 250V
-
Surface Mount
Microde Button
Microde Button
-65°C ~ 175°C
hotMBR3100RL
ON Semiconductor

DIODE SCHOTTKY 100V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: DO-201AA, DO-27, Axial
在庫1,293
100V
3A
790mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
600µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
VS-150KS20
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 150A B42

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: B-42
  • Supplier Device Package: B-42
  • Operating Temperature - Junction: -40°C ~ 200°C
パッケージ: B-42
在庫129
200V
150A
1.33V @ 471A
Standard Recovery >500ns, > 200mA (Io)
-
35mA @ 200V
-
Chassis, Stud Mount
B-42
B-42
-40°C ~ 200°C
GP2D020A065B
Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 58A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 650V
  • Capacitance @ Vr, F: 1054pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-247-2
在庫444
650V
58A (DC)
1.65V @ 20A
No Recovery Time > 500mA (Io)
-
200µA @ 650V
1054pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
S6GR
GeneSiC Semiconductor

DIODE GEN PURP REV 400V 6A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: DO-203AA, DO-4, Stud
在庫194
400V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 175°C
VS-16FL80S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 16A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 50µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: DO-203AA, DO-4, Stud
在庫266
800V
16A
1.4V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
50µA @ 800V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 150°C
JANTX1N4150UR-1
Microsemi Corporation

DIODE GEN PURP 50V 200MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: DO-213AA
在庫278
50V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
VS-8EWF04STRL-M3
Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫304
400V
8A
1.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
100µA @ 400V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
VS-8ETL06FP-N3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A TO-220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220 Full Pack
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: TO-220-2 Full Pack
在庫344
600V
8A
2.4V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220 Full Pack
-65°C ~ 175°C
LSM190JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 1A 90V SMAJ

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
パッケージ: -
在庫122
-
-
-
-
-
-
-
-
-
-
-
ES3AHE3_A/H
Vishay Semiconductor Diodes Division

DIODE UFAST 50V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-214AB, SMC
在庫460
50V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
EM 2B
Sanken

DIODE GEN PURP 800V 1.2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: Axial
在庫357
800V
1.2A
920mV @ 1.2A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Through Hole
Axial
-
-40°C ~ 150°C
MUR310S R7G
TSC America Inc.

DIODE, ULTRA FAST, 3A, 100V, 25N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: DO-214AB, SMC
在庫491
100V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 175°C
AS3BJHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2A DO214AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: DO-214AA, SMB
在庫432
600V
2A
1.05V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
20µA @ 600V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
VS-15MQ040-M3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 1.5A 40V SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 430mV @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 134pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: DO-214AC, SMA
在庫125
40V
1.5A
430mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
134pF @ 10V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-40°C ~ 150°C
SE30AFJ-M3/6B
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.4A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: DO-221AC, SMA Flat Leads
在庫256
600V
1.4A (DC)
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
100µA @ 100V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC
-55°C ~ 175°C
SS1H10-M3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 1A 100V DO-214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: DO-214AC, SMA
在庫422
100V
1A
860mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 175°C
D6G-T
Diodes Incorporated

DIODE GEN PURP 800V 1A T1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T1, Axial
  • Supplier Device Package: T-1
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: T1, Axial
在庫350
800V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 800V
8pF @ 4V, 1MHz
Through Hole
T1, Axial
T-1
-65°C ~ 150°C
CDBER0130R
Comchip Technology

DIODE SCHOTTKY 30V 100MA 0503

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0503 (1308 Metric)
  • Supplier Device Package: 0503/SOD-723F
  • Operating Temperature - Junction: 125°C (Max)
パッケージ: 0503 (1308 Metric)
在庫478
30V
100mA
450mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 10V
-
Surface Mount
0503 (1308 Metric)
0503/SOD-723F
125°C (Max)
SS320LW RVG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD123W
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: SOD-123W
在庫319
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 200V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
MBR1635-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: TO-220-2
在庫382
35V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
hotUG2D-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-204AC, DO-15, Axial
在庫16,000
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SD103AW-HE3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 350MA 40V SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 350mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: SOD-123
在庫19,576
40V
350mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 30V
50pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C