ページ 17 - トランジスタ - バイポーラ(BJT) - アレイ | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - バイポーラ(BJT) - アレイ

レコード 2,013
ページ  17/72
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部品番号
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説明
パッケージ
在庫
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2N2903A
Central Semiconductor Corp

TRANS 2NPN 50MA 30V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V
  • Power - Max: 1.2W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: TO-78-6 Metal Can
在庫3,232
50mA
30V
1V @ 500µA, 5mA
10nA (ICBO)
125 @ 1mA, 5V
1.2W
60MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
ZDT1147TC
Diodes Incorporated

TRANS 2PNP 12V 5A SOT223

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 380mV @ 50mA, 5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
  • Power - Max: 2.75W
  • Frequency - Transition: 115MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: TO-261-4, TO-261AA
在庫6,672
5A
12V
380mV @ 50mA, 5A
100nA
250 @ 500mA, 2V
2.75W
115MHz
-
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANTX2N3810L
Microsemi Corporation

TRANS 2PNP 60V 0.05A

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: TO-78-6 Metal Can
在庫4,256
50mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
ZTD09N50DE6QTA
Diodes Incorporated

TRANS 2NPN 50V 1A

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1.1W
  • Frequency - Transition: 215MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
パッケージ: SOT-23-6
在庫7,904
1A
50V
270mV @ 50mA, 1A
10nA
200 @ 500mA, 2V
1.1W
215MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
CMLT2907A BK
Central Semiconductor Corp

TRANS 2PNP 60V 0.6A SOT563

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
パッケージ: SOT-563, SOT-666
在庫2,432
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
350mW
200MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PMP5501G,135
Nexperia USA Inc.

TRANS 2PNP 45V 0.1A 5TSSOP

  • Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: 5-TSSOP
パッケージ: 5-TSSOP, SC-70-5, SOT-353
在庫7,808
100mA
45V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300mW
175MHz
150°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
5-TSSOP
PBSS4112PAN,115
Nexperia USA Inc.

TRANS 2NPN 120V 1A 6HUSON

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
パッケージ: 6-UDFN Exposed Pad
在庫6,800
1A
120V
120mV @ 50mA, 500mA
100nA (ICBO)
60 @ 500mA, 2V
510mW
120MHz
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
hot PMP5201V,115
Nexperia USA Inc.

TRANS 2PNP 45V 0.1A SOT666

  • Transistor Type: 2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
パッケージ: SOT-563, SOT-666
在庫48,000
100mA
45V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300mW
175MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
BC847QAPNZ
Nexperia USA Inc.

TRANS NPN/PNP 45V 0.1A 6DFN

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
パッケージ: 6-XFDFN Exposed Pad
在庫5,712
100mA
45V
100mV @ 500µA, 10mA
15nA (ICBO)
200 @ 2mA, 5V
350mW
100MHz
150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
JANTXV2N5794
Microsemi Corporation

TRANS 2NPN 40V 0.6A TO-78

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: TO-78-6 Metal Can
在庫6,176
600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
MMPQ3904 TR13
Central Semiconductor Corp

TRANSISTOR NPN QUAD SMD

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: 450MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.154", 3.90mm Width)
在庫2,496
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
1W
450MHz
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
XP0555300L
Panasonic Electronic Components

TRANS 2NPN 100V 0.02A SMINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫28,968
20mA
100V
200mV @ 1mA, 10mA
1µA
400 @ 2mA, 10V
150mW
150MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SMINI6-G1
MPQ3725A
Central Semiconductor Corp

TRANS 4NPN 50V 1A

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
パッケージ: 14-DIP (0.300", 7.62mm)
在庫7,416
1A
50V
450mV @ 50mA, 500mA
500nA (ICBO)
30 @ 500mA, 2V
1W
200MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
hot MMDT4124-7-F
Diodes Incorporated

TRANS 2NPN 25V 0.2A SOT363

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫73,740
200mA
25V
300mV @ 5mA, 50mA
50nA (ICBO)
120 @ 2mA, 1V
200mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
PBSS4140DPN,115
Nexperia USA Inc.

TRANS NPN/PNP 40V 1A 6TSOP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
パッケージ: SC-74, SOT-457
在庫159,426
1A
40V
500mV @ 100mA, 1A
100nA
300 @ 500mA, 5V
600mW
150MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
hot MMDT2222A-7-F
Diodes Incorporated

TRANS 2NPN 40V 0.6A SOT363

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫2,361,048
600mA
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
200mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot MMDT3906-7-F
Diodes Incorporated

TRANS 2PNP 40V 0.2A SOT363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫874,524
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
200mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot MBT2222ADW1T1G
ON Semiconductor

TRANS 2NPN 40V 0.6A SOT363

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫286,500
600mA
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
150mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
SG2004J
Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-CERDIP
パッケージ: -
Request a Quote
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
-55°C ~ 125°C (TA)
Through Hole
16-CDIP (0.300", 7.62mm)
16-CERDIP
JAN2N4854U-TR
Microchip Technology

TRANSISTOR DUAL SMALL-SIGNAL BJT

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
パッケージ: -
Request a Quote
600mA
40V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
6-SMD
2N2920U
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
パッケージ: -
在庫261
30mA
60V
300mV @ 100µA, 1mA
10µA (ICBO)
300 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
6-SMD
VT6T2T2R
Rohm Semiconductor

PNP+PNP GENERAL PURPOSE AMPLIFIC

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: VMT6
パッケージ: -
在庫16,410
100mA
50V
400mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
150mW
300MHz
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
VMT6
IT121-SOIC-8L-ROHS
Linear Integrated Systems, Inc.

TIGHTLY MATCHED, MONOLITHIC DUAL

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 10mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50µA, 500µA
  • Current - Collector Cutoff (Max): 1nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: -
在庫7,491
10mA
45V
500mV @ 50µA, 500µA
1nA (ICBO)
100 @ 1mA, 5V
500mW
180MHz
-55°C ~ 150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UDN2879W-2
Allegro MicroSystems

QUAD DARLINGTON SWITCHES

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP Exposed Tab
  • Supplier Device Package: 12-SIP
パッケージ: -
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4A
80V
-
100µA
-
-
-
-20°C ~ 85°C (TA)
Through Hole
12-SIP Exposed Tab
12-SIP
BC847CPN-AU_R1_000A1
Panjit International Inc.

DUAL GENERAL PURPOSE TRANSISTORS

  • Transistor Type: 1 NPN, 1 PNP Complementary
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: -
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100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
380mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
HN1B04FU-Y-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 150MHz, 120MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
パッケージ: -
在庫17,850
150mA
50V
250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
150MHz, 120MHz
-
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
MMDT2907A-TP
Micro Commercial Co

Interface

  • Transistor Type: 2 PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: -
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600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
200mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SG2803J-JAN
Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 18-CERDIP
パッケージ: -
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500mA
50V
1.6V @ 500µA, 350mA
-
-
-
-
-55°C ~ 125°C (TA)
Through Hole
18-CDIP (0.300", 7.62mm)
18-CERDIP