ページ 26 - トランジスタ - バイポーラ（BJT） - アレイ | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - バイポーラ（BJT） - アレイ

レコード 2,013
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在庫
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SMBT 3904U E6327
Infineon Technologies

TRANS 2NPN 40V 0.2A SC74-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: PG-SC74-6
パッケージ: SC-74, SOT-457
在庫7,232
200mA
40V
300mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
330mW
300MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
PG-SC74-6
BC847BPN/DG/B2,115
Nexperia USA Inc.

TRANS GEN PURPOSE SC-88

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,760
-
-
-
-
-
-
-
-
-
-
-
MD7003B
Central Semiconductor Corp

TRANS 2PNP 50MA 40V TO78-6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 10V
  • Power - Max: -
  • Frequency - Transition: 200MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: TO-78-6 Metal Can
在庫4,464
50mA
40V
-
-
40 @ 100µA, 10V
-
200MHz
-
Through Hole
TO-78-6 Metal Can
TO-78-6
2N3810A
Central Semiconductor Corp

TRANS 2PNP 50MA 60V TO78-6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: TO-78-6 Metal Can
在庫4,112
50mA
60V
250mV @ 1mA, 100µA
10nA (ICBO)
150 @ 1mA, 5V
600mW
100MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
2N2480A
Central Semiconductor Corp

TRANS 2NPN 500MA 40V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: TO-78-6 Metal Can
在庫6,800
500mA
40V
1.2V @ 5mA, 50mA
20nA (ICBO)
50 @ 1mA, 5V
600mW
50MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
2N2453
Central Semiconductor Corp

TRANS 2NPN 50MA 30V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: TO-78-6 Metal Can
在庫2,800
50mA
30V
-
-
150 @ 1mA, 5V
600mW
60MHz
-
Through Hole
TO-78-6 Metal Can
TO-78-6
hot 2N2223A
Central Semiconductor Corp

TRANS 2NPN 500MA 60V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: TO-78-6 Metal Can
在庫5,328
500mA
60V
1.2V @ 5mA, 50mA
10nA (ICBO)
50 @ 10mA, 5V
600mW
50MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
SSM2220SZ-REEL
Analog Devices Inc.

TRANS 2PNP 36V 0.02A 8SOIC

  • Transistor Type: 2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 36V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫3,280
20mA
36V
100mV @ 100µA, 1mA
-
80 @ 1mA, 36V
-
-
-65°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SG2003J-JAN
Microsemi Corporation

TRANS 7NPN DARL 50V 0.5A 16DIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-CDIP
パッケージ: 16-CDIP (0.300", 7.62mm)
在庫5,040
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Through Hole
16-CDIP (0.300", 7.62mm)
16-CDIP
ZDT649TC
Diodes Incorporated

TRANS 2NPN 25V 2A SM8

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 2.75W
  • Frequency - Transition: 240MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
パッケージ: SOT-223-8
在庫5,664
2A
25V
500mV @ 200mA, 2A
100nA (ICBO)
100 @ 1A, 2V
2.75W
240MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8
hot ZXTDE4M832TA
Diodes Incorporated

TRANS NPN/PNP 80V/70V 8MLP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 3.5A, 2.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V, 70V
  • Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A
  • Current - Collector Cutoff (Max): 25nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 40 @ 1.5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: 160MHz, 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x2)
パッケージ: 8-VDFN Exposed Pad
在庫325,464
3.5A, 2.5A
80V, 70V
325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A
25nA
300 @ 200mA, 2V / 40 @ 1.5A, 5V
1W
160MHz, 180MHz
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-MLP (3x2)
hot XP0140100L
Panasonic Electronic Components

TRANS 2PNP 50V 0.1A SMINI5

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SMini5-G1
パッケージ: 5-TSSOP, SC-70-5, SOT-353
在庫19,920
100mA
50V
500mV @ 10mA, 100mA
100µA
160 @ 2mA, 10V
150mW
80MHz
150°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
SMini5-G1
NSV60101DMTWTBG
ON Semiconductor

TRANS NPN DUAL 60V 1A 6WDFN

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 2.27W
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
パッケージ: 6-WDFN Exposed Pad
在庫3,152
1A
60V
180mV @ 100mA, 1A
100nA (ICBO)
120 @ 500mA, 2V
2.27W
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
NSVT65011MW6T1G
ON Semiconductor

TRANS 2NPN 65V 0.1A SC88-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88 (SOT-363)
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫4,048
100mA
65V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
380mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88 (SOT-363)
SG2013J-883B
Microsemi Corporation

TRANS 7NPN DARL 50V 0.6A 16JDIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 900 @ 500mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 16-CDIP
パッケージ: -
在庫7,616
600mA
50V
1.9V @ 600µA, 500mA
-
900 @ 500mA, 2V
-
-
150°C (TJ)
Through Hole
-
16-CDIP
PUMZ2,125
Nexperia USA Inc.

TRANS NPN/PNP 50V 0.15A 6TSSOP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz, 190MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP, SC-88
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫5,248
150mA
50V
250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
300mW
100MHz, 190MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP, SC-88
DMG204B10R
Panasonic Electronic Components

TRANS NPN/PNP 20V/50V MINI6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max): 20V, 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA / 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V / 210 @ 2mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: Mini6-G4-B
パッケージ: SOT-23-6
在庫23,124
500mA, 100mA
20V, 50V
400mV @ 20mA, 500mA / 500mV @ 10mA, 100mA
100µA
200 @ 500mA, 2V / 210 @ 2mA, 10V
300mW
150MHz
150°C (TJ)
Surface Mount
SOT-23-6
Mini6-G4-B
DMA206010R
Panasonic Electronic Components

TRANS 2PNP 50V 0.1A MINI6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: Mini6-G4-B
パッケージ: SOT-23-6
在庫44,088
100mA
50V
500mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
300mW
150MHz
150°C (TJ)
Surface Mount
SOT-23-6
Mini6-G4-B
DMC204010R
Panasonic Electronic Components

TRANS 2NPN 50V 0.1A MINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: Mini6-G4-B
パッケージ: SOT-23-6
在庫100,116
100mA
50V
300mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
300mW
150MHz
150°C (TJ)
Surface Mount
SOT-23-6
Mini6-G4-B
hot MMDT5451-7-F
Diodes Incorporated

TRANS NPN/PNP 160V/150V SOT363

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 160V, 150V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫250,800
200mA
160V, 150V
200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V / 60 @ 10mA, 5V
200mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BC847BPN-QZ
Nexperia USA Inc.

TRANS NPN/PNP 45V 0.1A 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 220mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
パッケージ: -
Request a Quote
100mA
45V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
220mW
100MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
MPQ2222-PBFREE
Central Semiconductor Corp

TRANS 4NPN 40V 0.5A

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 650mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
パッケージ: -
在庫3,213
500mA
40V
1.6V @ 30mA, 300mA
50nA (ICBO)
100 @ 150mA, 10V
650mW
200MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
BC817RA147
NXP Semiconductors

BC817RA - SMALL SIGNAL BIPOLAR T

  • Transistor Type: 2 NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1412-6
パッケージ: -
Request a Quote
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
500mW
100MHz
150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1412-6
SG2821J
Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 95V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 18-CERDIP
パッケージ: -
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500mA
95V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
-55°C ~ 125°C (TA)
Through Hole
18-CDIP (0.300", 7.62mm)
18-CERDIP
BC847BS-AU_R1_000A1
Panjit International Inc.

SOT-363, TRANSISTOR

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: -
在庫26,457
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
150mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
JANSM2N3810U
Microchip Technology

DUAL RH SMALL-SIGNAL BJT

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
パッケージ: -
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50mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U
JANS2N5796
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
パッケージ: -
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600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 175°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
CYTA4494D-BK
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: 1 NPN, 1 PNP Complementary
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
  • Power - Max: 2W
  • Frequency - Transition: 20MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-228
  • Supplier Device Package: SOT-228
パッケージ: -
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300mA
400V
750mV @ 5mA, 50mA
500nA
50 @ 10mA, 10V
2W
20MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-228
SOT-228