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トランジスタ - バイポーラ(BJT) - シングル

レコード 20,307
ページ  3/726
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部品番号
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説明
パッケージ
在庫
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CP647-CEN1103-WS
Central Semiconductor Corp

TRANS PNP DARLINGTON DIE

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,520
-
-
-
-
-
-
-
-
-
-
-
JANTX2N6251T1
Microsemi Corporation

TRANS NPN 350V 10A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V
  • Power - Max: 6W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
パッケージ: TO-254-3, TO-254AA (Straight Leads)
在庫3,952
10A
350V
1.5V @ 1.67A, 10A
1mA
6 @ 10A, 3V
6W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
2N5400RLRPG
ON Semiconductor

TRANS PNP 120V 0.6A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫4,144
600mA
120V
500mV @ 5mA, 50mA
100nA (ICBO)
40 @ 10mA, 5V
625mW
400MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
KSD2058YTSTU
Fairchild/ON Semiconductor

TRANS NPN 60V 3A TO-220F

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: 400kHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
パッケージ: TO-220-3 Full Pack
在庫5,440
3A
60V
1.5V @ 200mA, 2A
10µA (ICBO)
100 @ 500mA, 5V
1.5W
400kHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot BST62-70TA
Diodes Incorporated

TRANS PNP DARL 72V 0.5A SOT89

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 72V
  • Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: TO-243AA
在庫516,000
500mA
72V
1.3V @ 500µA, 500mA
10µA
1000 @ 150mA, 10V
1W
-
-
Surface Mount
TO-243AA
SOT-89-3
2SB09480P
Panasonic Electronic Components

TRANS PNP 20V 10A TO-220F

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 330mA, 10A
  • Current - Collector Cutoff (Max): 50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 3A, 2V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-A1
パッケージ: TO-220-3 Full Pack
在庫7,616
10A
20V
600mV @ 330mA, 10A
50µA (ICBO)
130 @ 3A, 2V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-A1
PN2222G
ON Semiconductor

TRANS NPN 30V 0.6A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫3,376
600mA
30V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
625mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2SB1186AE
Rohm Semiconductor

TRANS PNP 160V 1.5A TO220FP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
  • Power - Max: 2W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
パッケージ: TO-220-3 Full Pack
在庫3,344
1.5A
160V
2V @ 100mA, 1A
1µA (ICBO)
60 @ 1A, 5V
2W
50MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
JANTXV2N2221AL
Microsemi Corporation

TRANS NPN 50V 0.8A TO18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
パッケージ: TO-206AA, TO-18-3 Metal Can
在庫4,416
800mA
50V
1V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
BUL59
STMicroelectronics

TRANS NPN 400V 8A TO220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 5A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5A, 5V
  • Power - Max: 90W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: TO-220-3
在庫6,960
8A
400V
1.5V @ 1A, 5A
200µA
6 @ 5A, 5V
90W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
2SA2039-TL-H
ON Semiconductor

TRANS PNP 50V 5A TP-FA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 800mW
  • Frequency - Transition: 360MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: 2-TP-FA
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫4,000
5A
50V
430mV @ 100mA, 2A
1µA (ICBO)
200 @ 500mA, 2V
800mW
360MHz
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
2-TP-FA
2SA1832-GR,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
パッケージ: SC-75, SOT-416
在庫3,504
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
80MHz
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
hot DSC7101S0L
Panasonic Electronic Components

TRANS NPN 80V 0.5A MINIP3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 185 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F2-B
パッケージ: TO-243AA
在庫36,000
500mA
80V
400mV @ 30mA, 300mA
100nA (ICBO)
185 @ 150mA, 10V
1W
150MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F2-B
hot FJT44KTF
Fairchild/ON Semiconductor

TRANS NPN 400V 0.3A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-4
パッケージ: TO-261-4, TO-261AA
在庫90,000
300mA
400V
750mV @ 5mA, 50mA
500nA
50 @ 10mA, 10V
2W
-
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-4
hot ZTX849
Diodes Incorporated

TRANS NPN 30V 5A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 1.2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
パッケージ: E-Line-3
在庫154,332
5A
30V
220mV @ 200mA, 5A
50nA (ICBO)
100 @ 1A, 1V
1.2W
100MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
hot 2SC4081T106S
Rohm Semiconductor

TRANS NPN 50V 0.15A SOT-323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
パッケージ: SC-70, SOT-323
在庫2,848,884
150mA
50V
400mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
200mW
180MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
UMT3
hot 2DA2018-7
Diodes Incorporated

TRANS PNP 12V 0.5A SOT523

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
  • Power - Max: 150mW
  • Frequency - Transition: 260MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
パッケージ: SOT-523
在庫1,116,000
500mA
12V
250mV @ 10mA, 200mA
100nA (ICBO)
270 @ 10mA, 2V
150mW
260MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
hot MJ802G
ON Semiconductor

TRANS NPN 90V 30A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30A
  • Voltage - Collector Emitter Breakdown (Max): 90V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
  • Current - Collector Cutoff (Max): 1mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
  • Power - Max: 200W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
パッケージ: TO-204AA, TO-3
在庫5,936
30A
90V
800mV @ 750mA, 7.5A
1mA (ICBO)
25 @ 7.5A, 2V
200W
2MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
hot 2SC2411KT146Q
Rohm Semiconductor

TRANS NPN 32V 0.5A SOT-346

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫176,244
500mA
32V
600mV @ 50mA, 500mA
1µA (ICBO)
120 @ 100mA, 3V
200mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
hot FMMT718TA
Diodes Incorporated

TRANS PNP 20V 1.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫5,865,096
1.5A
20V
220mV @ 50mA, 1.5A
100nA
300 @ 100mA, 2V
625mW
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC846BQB-QZ
Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 340 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1110D-3
パッケージ: -
在庫14,100
100 mA
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
340 mW
100MHz
150°C (TJ)
Surface Mount, Wettable Flank
3-XDFN Exposed Pad
DFN1110D-3
2SCR553RTL
Rohm Semiconductor

TRANS NPN 50V 2A TSMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 360MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: TSMT3
パッケージ: -
在庫6,699
2 A
50 V
350mV @ 35mA, 700mA
1µA (ICBO)
180 @ 50mA, 2V
500 mW
360MHz
150°C (TJ)
Surface Mount
SC-96
TSMT3
BC858B-AU_R1_000A1
Panjit International Inc.

TRANS PNP 30V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 330 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: -
在庫8,994
100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
330 mW
200MHz
-50°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
JANTXV2N2222AP
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
パッケージ: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
JANS2N3439U4-TR
Microchip Technology

TRANSISTOR POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSM2N2221AUA
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 650 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
パッケージ: -
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800 mA
50 V
1V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
650 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UA
2SA1317T-AC
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
  • Power - Max: 300 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SSIP
  • Supplier Device Package: 3-SPA
パッケージ: -
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200 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 1mA, 6V
300 mW
200MHz
150°C (TJ)
Through Hole
3-SSIP
3-SPA
2SD1624T-C-TD-E
onsemi

BIP NPN 3A 50V

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
パッケージ: -
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3 A
50 V
500mV @ 100mA, 2A
1µA (ICBO)
200 @ 100mA, 2V
500 mW
150MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP