ページ 309 - トランジスタ - バイポーラ（BJT） - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2229-Y(SAN2,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫2,192	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
MPS6531_D75Z	Fairchild/ON Semiconductor	TRANS NPN 40V 1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫3,440	1A	40V	300mV @ 10mA, 100mA	50nA (ICBO)	90 @ 100mA, 1V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BDW42	ON Semiconductor	TRANS NPN DARL 100V 15A TO-220AB Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 85W Frequency - Transition: 4MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫16,476	15A	100V	3V @ 50mA, 10A	2mA	1000 @ 5A, 4V	85W	4MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
KSC1507Y	Fairchild/ON Semiconductor	TRANS NPN 300V 200UA TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 200µA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V Power - Max: 15W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	パッケージ: TO-220-3	在庫6,032	200µA	300V	2V @ 5mA, 50mA	100µA (ICBO)	120 @ 10mA, 10V	15W	80MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BU941ZP	STMicroelectronics	TRANS NPN DARL 350V 15A TO-247 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V Power - Max: 155W Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	パッケージ: TO-247-3	在庫17,604	15A	350V	2V @ 300mA, 12A	100µA	300 @ 5A, 10V	155W	-	175°C (TJ)	Through Hole	TO-247-3	TO-247-3
BC328TA	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫3,376	800mA	25V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BD37916STU	Fairchild/ON Semiconductor	TRANS NPN 80V 2A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 2µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 25W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	パッケージ: TO-225AA, TO-126-3	在庫5,296	2A	80V	1V @ 100mA, 1A	2µA (ICBO)	100 @ 150mA, 2V	25W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
BC546TAR	Fairchild/ON Semiconductor	TRANS NPN 65V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫2,464	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SA10350SL	Panasonic Electronic Components	TRANS PNP 55V 0.05A MINI-3 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 55V Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫5,968	50mA	55V	600mV @ 10mA, 100mA	1µA	260 @ 2mA, 5V	200mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
2SC2988	Panasonic Electronic Components	TRANS NPN 16V 0.5A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 16V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 13.5V Power - Max: 5W Frequency - Transition: 1GHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126b	パッケージ: TO-225AA, TO-126-3	在庫5,056	500mA	16V	-	10µA (ICBO)	20 @ 200mA, 13.5V	5W	1GHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126b
JANTXV2N2484UB	Microsemi Corporation	TRANS NPN 60V 0.05A Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: -	パッケージ: 3-SMD, No Lead	在庫6,368	50mA	60V	300mV @ 100µA, 1mA	2nA	225 @ 10mA, 5V	360mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	-
2SB1587	Sanken	TRANS PNP DARL 150V 8A TO3PF Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 6A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 6A, 4V Power - Max: 75W Frequency - Transition: 65MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	パッケージ: TO-3P-3 Full Pack	在庫37,704	8A	150V	2.5V @ 6mA, 6A	100µA (ICBO)	5000 @ 6A, 4V	75W	65MHz	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF
BCX71J	Fairchild/ON Semiconductor	TRANS PNP 45V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫11,730,156	100mA	45V	550mV @ 1.25mA, 50mA	20nA	250 @ 2mA, 5V	350mW	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BCX70G	Fairchild/ON Semiconductor	TRANS NPN 45V 0.2A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: 125MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫978,480	200mA	45V	550mV @ 1.25mA, 50mA	20nA	120 @ 2mA, 5V	350mW	125MHz	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BC850BW,115	Nexperia USA Inc.	TRANS NPN 45V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	パッケージ: SC-70, SOT-323	在庫29,058	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BD238STU	Fairchild/ON Semiconductor	TRANS PNP 80V 2A TO-126 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V Power - Max: 25W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	パッケージ: TO-225AA, TO-126-3	在庫6,736	2A	80V	600mV @ 100mA, 1A	100µA (ICBO)	25 @ 1A, 2V	25W	3MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
MMBT6427	Fairchild/ON Semiconductor	TRANS NPN DARL 40V 1.2A SOT-23 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫347,844	1.2A	40V	1.5V @ 500µA, 500mA	1µA	14000 @ 500mA, 5V	350mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SA1163-GR,LF	Toshiba Semiconductor and Storage	TRANS PNP 120V 0.1A SMINI Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫67,398	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	200 @ 2mA, 6V	150mW	100MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
KA4A4M-0-T1-AT	Renesas Electronics Corporation	TRANSISTOR NPN USM SC-75 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSD602-RT1	onsemi	TRANS GP NPN 100MA 50V SC59 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BCW30LT3	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Power - Max: 300 mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	パッケージ: -	Request a Quote	100 mA	32 V	300mV @ 500µA, 10mA	100nA (ICBO)	215 @ 2mA, 5V	300 mW	-	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
AC847CQ-7	Diodes Incorporated	TRANS NPN 45V 0.1A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 310 mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: -	在庫9,000	100 mA	45 V	600mV @ 5mA, 100mA	15nA	420 @ 2mA, 5V	310 mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BC847CTT1G	onsemi	TRANS NPN GP 45V 100MA SC75-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	パッケージ: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	-	420 @ 2mA, 5V	200 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
2SD476KC-E	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V Power - Max: 40 W Frequency - Transition: 7MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: -	Request a Quote	4 A	50 V	1V @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 4V	40 W	7MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2N5284	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 50 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	パッケージ: -	Request a Quote	5 A	100 V	1.5V @ 2.5mA, 5mA	-	-	50 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
SJ6522AG	onsemi	BIP T03 PNP SPECIAL Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SB1123T-TD-EX	onsemi	BIP PNP 2A 50V Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 500 mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	パッケージ: -	Request a Quote	2 A	50 V	700mV @ 50mA, 1A	100nA (ICBO)	200 @ 100mA, 2V	500 mW	150MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
2SJ550S-E	Renesas Electronics Corporation	TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

2SC2229-Y(SAN2,F,M

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫2,192

50mA

150V

500mV @ 1mA, 10mA

100nA (ICBO)

70 @ 10mA, 5V

800mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

MPS6531_D75Z

Fairchild/ON Semiconductor

TRANS NPN 40V 1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫3,440

1A

40V

300mV @ 10mA, 100mA

50nA (ICBO)

90 @ 100mA, 1V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BDW42

ON Semiconductor

TRANS NPN DARL 100V 15A TO-220AB

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 85W
Frequency - Transition: 4MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫16,476

15A

100V

3V @ 50mA, 10A

2mA

1000 @ 5A, 4V

85W

4MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

KSC1507Y

Fairchild/ON Semiconductor

TRANS NPN 300V 200UA TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 200µA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Power - Max: 15W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

パッケージ: TO-220-3

在庫6,032

200µA

300V

2V @ 5mA, 50mA

100µA (ICBO)

120 @ 10mA, 10V

15W

80MHz

150°C (TJ)

Through Hole

TO-220-3

BU941ZP

STMicroelectronics

TRANS NPN DARL 350V 15A TO-247

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Power - Max: 155W
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

パッケージ: TO-247-3

在庫17,604

15A

350V

2V @ 300mA, 12A

100µA

300 @ 5A, 10V

155W

-

175°C (TJ)

Through Hole

TO-247-3

BC328TA

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫3,376

800mA

25V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BD37916STU

Fairchild/ON Semiconductor

TRANS NPN 80V 2A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 25W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

パッケージ: TO-225AA, TO-126-3

在庫5,296

2A

80V

1V @ 100mA, 1A

2µA (ICBO)

100 @ 150mA, 2V

25W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

BC546TAR

Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫2,464

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SA10350SL

Panasonic Electronic Components

TRANS PNP 55V 0.05A MINI-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 55V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫5,968

50mA

55V

600mV @ 10mA, 100mA

1µA

260 @ 2mA, 5V

200mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

2SC2988

Panasonic Electronic Components

TRANS NPN 16V 0.5A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 13.5V
Power - Max: 5W
Frequency - Transition: 1GHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126b

パッケージ: TO-225AA, TO-126-3

在庫5,056

500mA

16V

-

10µA (ICBO)

20 @ 200mA, 13.5V

5W

1GHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126b

JANTXV2N2484UB

Microsemi Corporation

TRANS NPN 60V 0.05A

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Power - Max: 360mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: -

パッケージ: 3-SMD, No Lead

在庫6,368

50mA

60V

300mV @ 100µA, 1mA

2nA

225 @ 10mA, 5V

360mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

-

2SB1587

Sanken

TRANS PNP DARL 150V 8A TO3PF

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 6A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 6A, 4V
Power - Max: 75W
Frequency - Transition: 65MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PF

パッケージ: TO-3P-3 Full Pack

在庫37,704

8A

150V

2.5V @ 6mA, 6A

100µA (ICBO)

5000 @ 6A, 4V

75W

65MHz

150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3PF

BCX71J

Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫11,730,156

100mA

45V

550mV @ 1.25mA, 50mA

20nA

250 @ 2mA, 5V

350mW

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BCX70G

Fairchild/ON Semiconductor

TRANS NPN 45V 0.2A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 125MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫978,480

200mA

45V

550mV @ 1.25mA, 50mA

20nA

120 @ 2mA, 5V

350mW

125MHz

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC850BW,115

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

パッケージ: SC-70, SOT-323

在庫29,058

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BD238STU

Fairchild/ON Semiconductor

TRANS PNP 80V 2A TO-126

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Power - Max: 25W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

パッケージ: TO-225AA, TO-126-3

在庫6,736

2A

80V

600mV @ 100mA, 1A

100µA (ICBO)

25 @ 1A, 2V

25W

3MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

MMBT6427

Fairchild/ON Semiconductor

TRANS NPN DARL 40V 1.2A SOT-23

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫347,844

1.2A

40V

1.5V @ 500µA, 500mA

1µA

14000 @ 500mA, 5V

350mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SA1163-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫67,398

100mA

120V

300mV @ 1mA, 10mA

100nA (ICBO)

200 @ 2mA, 6V

150mW

100MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

KA4A4M-0-T1-AT

Renesas Electronics Corporation

TRANSISTOR NPN USM SC-75

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MSD602-RT1

onsemi

TRANS GP NPN 100MA 50V SC59

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

BCW30LT3

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Power - Max: 300 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

パッケージ: -

Request a Quote

100 mA

32 V

300mV @ 500µA, 10mA

100nA (ICBO)

215 @ 2mA, 5V

300 mW

-

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

AC847CQ-7

Diodes Incorporated

TRANS NPN 45V 0.1A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 310 mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: -

在庫9,000

100 mA

45 V

600mV @ 5mA, 100mA

15nA

420 @ 2mA, 5V

310 mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC847CTT1G

onsemi

TRANS NPN GP 45V 100MA SC75-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416

パッケージ: -

Request a Quote

100 mA

45 V

600mV @ 5mA, 100mA

-

420 @ 2mA, 5V

200 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-75, SOT-416

2SD476KC-E

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
Power - Max: 40 W
Frequency - Transition: 7MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: -

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4 A

50 V

1V @ 200mA, 2A

1µA (ICBO)

100 @ 1A, 4V

40 W

7MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2N5284

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 50 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

パッケージ: -

Request a Quote

5 A

100 V

1.5V @ 2.5mA, 5mA

-

50 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

SJ6522AG

onsemi

BIP T03 PNP SPECIAL

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

2SB1123T-TD-EX

onsemi

BIP PNP 2A 50V

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 500 mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

パッケージ: -

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2 A

50 V

700mV @ 50mA, 1A

100nA (ICBO)

200 @ 100mA, 2V

500 mW

150MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

2SJ550S-E

Renesas Electronics Corporation

TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-