ページ 334 - トランジスタ - バイポーラ（BJT） - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BDW63C-S	Bourns Inc.	TRANS NPN DARL 100V 6A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 60mA, 6A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	パッケージ: TO-220-3	在庫5,696	6A	100V	4V @ 60mA, 6A	500µA	750 @ 2A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
BD895-S	Bourns Inc.	TRANS NPN DARL 45V 8A Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 12mA, 3A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	パッケージ: TO-220-3	在庫3,008	8A	45V	2.5V @ 12mA, 3A	500µA	750 @ 3A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
TRD136DT4	STMicroelectronics	TRANS NPN 400V 3A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V Power - Max: 20W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫3,440	3A	400V	1V @ 500mA, 2A	-	10 @ 2A, 5V	20W	-	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
ST631K	STMicroelectronics	TRANS PNP 120V 1A SOT-32 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Power - Max: 12.5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32-3	パッケージ: TO-225AA, TO-126-3	在庫4,960	1A	120V	500mV @ 50mA, 500mA	1µA (ICBO)	120 @ 100mA, 5V	12.5W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32-3
KSD1413TU	Fairchild/ON Semiconductor	TRANS NPN DARL 40V 3A TO-220F Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	パッケージ: TO-220-3 Full Pack	在庫2,608	3A	40V	1.5V @ 4mA, 2A	20µA (ICBO)	2000 @ 1A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
ZTX1151ASTOB	Diodes Incorporated	TRANS PNP 40V 3A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 240mV @ 250mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 145MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	パッケージ: E-Line-3, Formed Leads	在庫3,536	3A	40V	240mV @ 250mA, 3A	100nA	250 @ 500mA, 2V	1W	145MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
TIP115	ON Semiconductor	TRANS PNP DARL 60V 2A TO220AB Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫120,300	2A	60V	2.5V @ 8mA, 2A	2mA	1000 @ 1A, 4V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
TTC008(Q)	Toshiba Semiconductor and Storage	TRANS NPN 285V 1.5A PW MOLD2 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 285V Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 1.1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PW-MOLD2	パッケージ: TO-251-3 Short Leads, IPak, TO-251AA	在庫3,264	1.5A	285V	1V @ 62.5mA, 500mA	10µA (ICBO)	80 @ 1mA, 5V	1.1W	-	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	PW-MOLD2
2SA2126-TL-H	ON Semiconductor	TRANS PNP 50V 3A TP-FA Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 800mW Frequency - Transition: 390MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫15,912	3A	50V	520mV @ 100mA, 2A	1µA (ICBO)	200 @ 100mA, 2V	800mW	390MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
FMMT614TC	Diodes Incorporated	TRANS NPN DARL 100V 0.5A SOT23-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫2,944	500mA	100V	1V @ 5mA, 500mA	10µA	15000 @ 100mA, 5V	500mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BCP68T1G	ON Semiconductor	TRANS NPN 20V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 1.5W Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	パッケージ: TO-261-4, TO-261AA	在庫357,048	1A	20V	500mV @ 100mA, 1A	10µA (ICBO)	85 @ 500mA, 1V	1.5W	60MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BC847CM,315	Nexperia USA Inc.	TRANS NPN 45V 0.1A SOT883 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: DFN1006-3	パッケージ: SC-101, SOT-883	在庫6,048	100mA	45V	400mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	250mW	100MHz	150°C (TJ)	Surface Mount	SC-101, SOT-883	DFN1006-3
2SD2096T114E	Rohm Semiconductor	TRANS NPN 60V 3A HRT/TO-220FP Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1.8W Frequency - Transition: 8MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: HRT Supplier Device Package: HRT	パッケージ: HRT	在庫6,416	3A	60V	1V @ 200mA, 2A	10µA (ICBO)	100 @ 500mA, 5V	1.8W	8MHz	150°C (TJ)	Through Hole	HRT	HRT
2SD1733TLP	Rohm Semiconductor	TRANS NPN 80V 1A SOT-428 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫16,200	1A	80V	400mV @ 20mA, 500mA	1µA (ICBO)	120 @ 500mA, 3V	10W	100MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	CPT3
ESM6045DV	STMicroelectronics	TRANS NPN DARL 450V 84A ISOTOP Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 84A Voltage - Collector Emitter Breakdown (Max): 450V Vce Saturation (Max) @ Ib, Ic: 1.35V @ 4A, 70A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 70A, 5V Power - Max: 250W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP?	パッケージ: ISOTOP	在庫3,824	84A	450V	1.35V @ 4A, 70A	-	120 @ 70A, 5V	250W	-	150°C (TJ)	Chassis Mount	ISOTOP	ISOTOP?
NJVMJD31CT4G-VF01	ON Semiconductor	TRANS NPN 100V 3A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 1.56W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫23,652	3A	100V	1.2V @ 375mA, 3A	50µA	25 @ 1A, 4V	1.56W	3MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
NST3906F3T5G	ON Semiconductor	TRANS PNP 40V 0.2A SOT-1123 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 290mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	パッケージ: SOT-1123	在庫164,772	200mA	40V	400mV @ 5mA, 50mA	-	100 @ 10mA, 1V	290mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-1123	SOT-1123
FJA4213OTU	Fairchild/ON Semiconductor	TRANS PNP 250V 17A TO-3PN Transistor Type: PNP Current - Collector (Ic) (Max): 17A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Power - Max: 130W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	パッケージ: TO-3P-3, SC-65-3	在庫21,540	17A	250V	3V @ 800mA, 8A	5µA (ICBO)	55 @ 1A, 5V	130W	30MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
JANKCBM2N2221A	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	パッケージ: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
JANKCCD2N5153	Microchip Technology	RH POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	パッケージ: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2SB772-R-BP	Micro Commercial Co	TRANS PNP 30V 3A TO126 Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V Power - Max: 1.25 W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	パッケージ: -	Request a Quote	3 A	30 V	500mV @ 200mA, 2A	1µA	60 @ 1A, 2V	1.25 W	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
ABC857B-HF	Comchip Technology	AUTOMOTIVE TRANS PNP 50V 100MA S Transistor Type: - Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: -	Request a Quote	100 mA	45 V	650mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	250 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SD571-1-T-ND-AZ	Renesas Electronics Corporation	TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5874	Microchip Technology	PNP POWER TRANSISTOR SILICON AMP Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
KTA1267-O-BP	Micro Commercial Co	TRANS PNP 50V 0.15A TO92S Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 400 mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	パッケージ: -	Request a Quote	150 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	400 mW	80MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
BD442STU-ON	onsemi	TRANS PNP 80V 4A TO126-3 Transistor Type: PNP Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Power - Max: 36 W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	パッケージ: -	Request a Quote	4 A	80 V	800mV @ 200mA, 2A	100µA	40 @ 500mA, 1V	36 W	3MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
MMBT3904Q-7-F	Diodes Incorporated	TRANS NPN 40V 0.2A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 310 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: -	在庫5,958	200 mA	40 V	300mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	310 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
JANS2N2919U-TR	Microchip Technology	TRANS NPN 60V 0.03A 6SMD Transistor Type: NPN Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	パッケージ: -	Request a Quote	30 mA	60 V	-	-	-	-	-	200°C (TJ)	Surface Mount	6-SMD, No Lead	6-SMD

BDW63C-S

Bourns Inc.

TRANS NPN DARL 100V 6A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 60mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

パッケージ: TO-220-3

在庫5,696

6A

100V

4V @ 60mA, 6A

500µA

750 @ 2A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

BD895-S

Bourns Inc.

TRANS NPN DARL 45V 8A

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

パッケージ: TO-220-3

在庫3,008

8A

45V

2.5V @ 12mA, 3A

500µA

750 @ 3A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

TRD136DT4

STMicroelectronics

TRANS NPN 400V 3A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Power - Max: 20W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫3,440

3A

400V

1V @ 500mA, 2A

-

10 @ 2A, 5V

20W

-

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

ST631K

STMicroelectronics

TRANS PNP 120V 1A SOT-32

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Power - Max: 12.5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3

パッケージ: TO-225AA, TO-126-3

在庫4,960

1A

120V

500mV @ 50mA, 500mA

1µA (ICBO)

120 @ 100mA, 5V

12.5W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

SOT-32-3

KSD1413TU

Fairchild/ON Semiconductor

TRANS NPN DARL 40V 3A TO-220F

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

パッケージ: TO-220-3 Full Pack

在庫2,608

3A

40V

1.5V @ 4mA, 2A

20µA (ICBO)

2000 @ 1A, 2V

2W

-

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

ZTX1151ASTOB

Diodes Incorporated

TRANS PNP 40V 3A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 250mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 145MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

パッケージ: E-Line-3, Formed Leads

在庫3,536

3A

40V

240mV @ 250mA, 3A

100nA

250 @ 500mA, 2V

1W

145MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

TIP115

ON Semiconductor

TRANS PNP DARL 60V 2A TO220AB

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫120,300

2A

60V

2.5V @ 8mA, 2A

2mA

1000 @ 1A, 4V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

TTC008(Q)

Toshiba Semiconductor and Storage

TRANS NPN 285V 1.5A PW MOLD2

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 285V
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Power - Max: 1.1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PW-MOLD2

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫3,264

1.5A

285V

1V @ 62.5mA, 500mA

10µA (ICBO)

80 @ 1mA, 5V

1.1W

-

150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

PW-MOLD2

2SA2126-TL-H

ON Semiconductor

TRANS PNP 50V 3A TP-FA

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 800mW
Frequency - Transition: 390MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫15,912

3A

50V

520mV @ 100mA, 2A

1µA (ICBO)

200 @ 100mA, 2V

800mW

390MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

FMMT614TC

Diodes Incorporated

TRANS NPN DARL 100V 0.5A SOT23-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫2,944

500mA

100V

1V @ 5mA, 500mA

10µA

15000 @ 100mA, 5V

500mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BCP68T1G

ON Semiconductor

TRANS NPN 20V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 1.5W
Frequency - Transition: 60MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

在庫357,048

1A

20V

500mV @ 100mA, 1A

10µA (ICBO)

85 @ 500mA, 1V

1.5W

60MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BC847CM,315

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT883

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3

パッケージ: SC-101, SOT-883

在庫6,048

100mA

45V

400mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

250mW

100MHz

150°C (TJ)

Surface Mount

SC-101, SOT-883

DFN1006-3

2SD2096T114E

Rohm Semiconductor

TRANS NPN 60V 3A HRT/TO-220FP

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1.8W
Frequency - Transition: 8MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: HRT
Supplier Device Package: HRT

パッケージ: HRT

在庫6,416

3A

60V

1V @ 200mA, 2A

10µA (ICBO)

100 @ 500mA, 5V

1.8W

8MHz

150°C (TJ)

Through Hole

HRT

2SD1733TLP

Rohm Semiconductor

TRANS NPN 80V 1A SOT-428

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫16,200

1A

80V

400mV @ 20mA, 500mA

1µA (ICBO)

120 @ 500mA, 3V

10W

100MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

CPT3

ESM6045DV

STMicroelectronics

TRANS NPN DARL 450V 84A ISOTOP

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 84A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1.35V @ 4A, 70A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 70A, 5V
Power - Max: 250W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP?

パッケージ: ISOTOP

在庫3,824

84A

450V

1.35V @ 4A, 70A

-

120 @ 70A, 5V

250W

-

150°C (TJ)

Chassis Mount

ISOTOP

ISOTOP?

NJVMJD31CT4G-VF01

ON Semiconductor

TRANS NPN 100V 3A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫23,652

3A

100V

1.2V @ 375mA, 3A

50µA

25 @ 1A, 4V

1.56W

3MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

NST3906F3T5G

ON Semiconductor

TRANS PNP 40V 0.2A SOT-1123

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 290mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123

パッケージ: SOT-1123

在庫164,772

200mA

40V

400mV @ 5mA, 50mA

-

100 @ 10mA, 1V

290mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-1123

FJA4213OTU

Fairchild/ON Semiconductor

TRANS PNP 250V 17A TO-3PN

Transistor Type: PNP
Current - Collector (Ic) (Max): 17A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Power - Max: 130W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

パッケージ: TO-3P-3, SC-65-3

在庫21,540

17A

250V

3V @ 800mA, 8A

5µA (ICBO)

55 @ 1A, 5V

130W

30MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

JANKCBM2N2221A

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

パッケージ: -

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800 mA

50 V

1V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

JANKCCD2N5153

Microchip Technology

RH POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

パッケージ: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2SB772-R-BP

Micro Commercial Co

TRANS PNP 30V 3A TO126

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
Power - Max: 1.25 W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

パッケージ: -

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3 A

30 V

500mV @ 200mA, 2A

1µA

60 @ 1A, 2V

1.25 W

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

ABC857B-HF

Comchip Technology

AUTOMOTIVE TRANS PNP 50V 100MA S

Transistor Type: -
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: -

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100 mA

45 V

650mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

250 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SD571-1-T-ND-AZ

Renesas Electronics Corporation

TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

2N5874

Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

KTA1267-O-BP

Micro Commercial Co

TRANS PNP 50V 0.15A TO92S

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 400 mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

パッケージ: -

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150 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

400 mW

80MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

BD442STU-ON

onsemi

TRANS PNP 80V 4A TO126-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 36 W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

パッケージ: -

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4 A

80 V

800mV @ 200mA, 2A

100µA

40 @ 500mA, 1V

36 W

3MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

MMBT3904Q-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 310 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: -

在庫5,958

200 mA

40 V

300mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

310 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

JANS2N2919U-TR

Microchip Technology

TRANS NPN 60V 0.03A 6SMD

Transistor Type: NPN
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD

パッケージ: -

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30 mA

60 V

-

200°C (TJ)

Surface Mount

6-SMD, No Lead

6-SMD