ページ 407 - トランジスタ - バイポーラ(BJT) - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - バイポーラ(BJT) - シングル

レコード 20,307
ページ  407/726
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在庫
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BCW 66F E6327
Infineon Technologies

TRANS NPN 45V 0.8A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫4,192
800mA
45V
450mV @ 50mA, 500mA
20nA (ICBO)
100 @ 100mA, 1V
330mW
170MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BU426A-S
Bourns Inc.

TRANS NPN 400V 6A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 1.25A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 600mA, 5V
  • Power - Max: 70W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
パッケージ: TO-218-3
在庫3,664
6A
400V
3V @ 1.25A, 4A
1mA
30 @ 600mA, 5V
70W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93
BC182B_J35Z
Fairchild/ON Semiconductor

TRANS NPN 50V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫4,432
100mA
50V
600mV @ 5mA, 100mA
15nA (ICBO)
40 @ 10µA, 5V
350mW
150MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
ZTX853STOB
Diodes Incorporated

TRANS NPN 100V 4A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 1.2W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
パッケージ: E-Line-3
在庫2,080
4A
100V
200mV @ 400mA, 4A
50nA (ICBO)
100 @ 2A, 2V
1.2W
130MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
BC308ATF
Fairchild/ON Semiconductor

TRANS PNP 25V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫6,784
100mA
25V
500mV @ 5mA, 100mA
15nA
120 @ 2mA, 5V
500mW
130MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2SB1236ATV2Q
Rohm Semiconductor

TRANS PNP 160V 1.5A ATV

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: ATV
パッケージ: 3-SIP
在庫30,000
1.5A
160V
2V @ 100mA, 1A
1µA (ICBO)
120 @ 100mA, 5V
1W
50MHz
150°C (TJ)
Through Hole
3-SIP
ATV
2SD0968A0L
Panasonic Electronic Components

TRANS NPN 120V 0.5A MINIPWR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F1
パッケージ: TO-243AA
在庫3,904
500mA
120V
600mV @ 50mA, 500mA
-
130 @ 150mA, 10V
1W
120MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F1
BCV49H6327XTSA1
Infineon Technologies

TRANSISTOR AF SOT89-4

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
パッケージ: TO-243AA
在庫6,608
500mA
60V
1V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
1W
150MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot 2SA1552S-H
ON Semiconductor

TRANS PNP 160V 1.5A TP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
パッケージ: TO-251-3 Short Leads, IPak, TO-251AA
在庫83,220
1.5A
160V
500mV @ 50mA, 500mA
1µA (ICBO)
140 @ 100mA, 5V
1W
120MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
hot 12A02CH-TL-E
ON Semiconductor

TRANS PNP 12V 1A CPH3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 20mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 700mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: 3-CPH
パッケージ: SC-96
在庫27,708
1A
12V
240mV @ 20mA, 400mA
100nA (ICBO)
300 @ 10mA, 2V
700mW
450MHz
150°C (TJ)
Surface Mount
SC-96
3-CPH
hot BCP69,115
Nexperia USA Inc.

TRANS PNP 20V 1A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 1.4W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: TO-261-4, TO-261AA
在庫24,000
1A
20V
500mV @ 100mA, 1A
100nA (ICBO)
85 @ 500mA, 1V
1.4W
140MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BF824W,135
Nexperia USA Inc.

TRANS PNP 30V 0.025A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
パッケージ: SC-70, SOT-323
在庫3,392
25mA
30V
-
50nA (ICBO)
25 @ 4mA, 10V
200mW
400MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
PBSS4120T,215
Nexperia USA Inc.

TRANS NPN 20V 1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
  • Power - Max: 480mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫47,862
1A
20V
250mV @ 50mA, 1A
100nA (ICBO)
300 @ 500mA, 2V
480mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MMBTA92,215
Nexperia USA Inc.

TRANS PNP 300V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫23,502
100mA
300V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
250mW
50MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot 2STR2160
STMicroelectronics

TRANS PNP 60V 1A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 480mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫4,706,880
1A
60V
480mV @ 100mA, 1A
100nA (ICBO)
180 @ 500mA, 2V
500mW
-
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N3772G
ON Semiconductor

TRANS NPN 60V 20A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
  • Current - Collector Cutoff (Max): 10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
  • Power - Max: 150W
  • Frequency - Transition: 200kHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
パッケージ: TO-204AA, TO-3
在庫11,196
20A
60V
4V @ 4A, 20A
10mA
15 @ 10A, 4V
150W
200kHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
2SC4617-R-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 150 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
パッケージ: -
Request a Quote
150 mA
50 V
400mV @ 5mA, 50mA
500nA (ICBO)
120 @ 1mA, 6V
150 mW
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
BSS52
Central Semiconductor Corp

TRANS NPN DARL 80V 1A TO39

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 4mA, 1A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
パッケージ: -
Request a Quote
1 A
80 V
1.6V @ 4mA, 1A
50nA (ICBO)
2000 @ 500mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2SB1144S
onsemi

POWER BIPOLAR TRANSISTOR, PNP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 1.5 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126ML
パッケージ: -
Request a Quote
1.5 A
100 V
500mV @ 50mA, 500mA
100nA (ICBO)
140 @ 100mA, 5V
1.5 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126ML
2SC4116-Y-TP
Micro Commercial Co

TRANS NPN 60V 0.15A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: -
Request a Quote
150 mA
60 V
250mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
100 mW
80MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
2SC4615E-E
onsemi

BIP NPN 1A 400V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SJE3016
onsemi

BIP T0220 NPN SPECIAL

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BC54-10PAS-QX
Nexperia USA Inc.

POWER BJTS IN DFN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 420 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-3
パッケージ: -
在庫8,970
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
420 mW
180MHz
150°C (TJ)
Surface Mount
3-UDFN Exposed Pad
DFN2020D-3
2N3792-PBFREE
Central Semiconductor Corp

TRANS PNP 80V 10A TO-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
  • Power - Max: 150 W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
パッケージ: -
在庫480
10 A
80 V
1V @ 500mA, 5A
-
50 @ 1A, 2V
150 W
4MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
2SD669-C-BP
Micro Commercial Co

TRANS NPN 120V 1.5A TO126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
  • Power - Max: 1 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
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1.5 A
120 V
1V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 5V
1 W
140MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
JANSD2N3440
Microchip Technology

RH POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
パッケージ: -
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1 A
250 V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800 mW
-
-55°C ~ 200°C
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BC816-16R
Nexperia USA Inc.

BC816-16/SOT23/TO-236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
パッケージ: -
在庫92,178
500 mA
80 V
400mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
300 mW
100MHz
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
FMMT596QTA
Diodes Incorporated

SS Hi Voltage Transistor SOT23 T

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 250mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
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300 mA
200 V
350mV @ 25mA, 250mA
100nA
100 @ 100mA, 10V
500 mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3