ページ 53 - トランジスタ - バイポーラ（BJT） - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SD2206,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 100V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫3,312	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
JANS2N3439UA	Microsemi Corporation	TRANS NPN 350V 1A UA Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	パッケージ: 4-SMD, No Lead	在庫3,920	1A	350V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
BD646-S	Bourns Inc.	TRANS PNP DARL 60V 8A Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 50mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	パッケージ: TO-220-3	在庫4,512	8A	60V	2.5V @ 50mA, 5A	500µA	750 @ 3A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
BC212B_J35Z	Fairchild/ON Semiconductor	TRANS PNP 50V 0.1A TO-9 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫7,440	100mA	50V	600mV @ 5mA, 100mA	15nA (ICBO)	60 @ 2mA, 5V	350mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC5024RTU	Fairchild/ON Semiconductor	TRANS NPN 500V 10A TO-3P Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 800mA, 5V Power - Max: 90W Frequency - Transition: 18MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P-3, SC-65-3	パッケージ: TO-3P-3, SC-65-3	在庫5,104	10A	500V	1V @ 800mA, 4A	10µA (ICBO)	15 @ 800mA, 5V	90W	18MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3
KSD1221OTU	Fairchild/ON Semiconductor	TRANS NPN 60V 3A I-PAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-Pak	パッケージ: TO-251-3 Short Leads, IPak, TO-251AA	在庫60,480	3A	60V	1V @ 300mA, 3A	100µA (ICBO)	60 @ 500mA, 5V	1W	3MHz	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-Pak
KSP93BU	Fairchild/ON Semiconductor	TRANS PNP 200V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫6,992	500mA	200V	500mV @ 2mA, 20mA	250nA (ICBO)	25 @ 30mA, 10V	625mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
ZUMT717TC	Diodes Incorporated	TRANS PNP 12V 1.25A SC70-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1.25A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1.25A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 500mW Frequency - Transition: 220MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	パッケージ: SC-70, SOT-323	在庫7,616	1.25A	12V	240mV @ 100mA, 1.25A	10nA	200 @ 500mA, 2V	500mW	220MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
ZTX601ASTOA	Diodes Incorporated	TRANS NPN DARL 160V 1A E-LINE Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1W Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	パッケージ: E-Line-3, Formed Leads	在庫6,176	1A	160V	1.2V @ 10mA, 1A	10µA	2000 @ 500mA, 10V	1W	250MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
2N3904_D10Z	Fairchild/ON Semiconductor	TRANS NPN 40V 0.2A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫7,280	200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
TIP127FP	STMicroelectronics	TRANS PNP DARL 100V 5A TO-220FP Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	パッケージ: TO-220-3 Full Pack	在庫63,792	5A	100V	4V @ 20mA, 5A	500µA	1000 @ 3A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
BC848CE6433HTMA1	Infineon Technologies	TRANS NPN 30V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫7,344	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	330mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
JANTXV2N2218	Microsemi Corporation	TRANS NPN 30V 0.8A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	パッケージ: TO-205AD, TO-39-3 Metal Can	在庫3,232	800mA	30V	1.6V @ 50mA, 500mA	10nA	40 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
MMBT3906-TP	Micro Commercial Co	TRANS PNP 40V 0.2A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫19,296	200mA	40V	400mV @ 5mA, 50mA	100nA (ICBO)	100 @ 10mA, 1V	300mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BUT11A	Fairchild/ON Semiconductor	TRANS NPN 450V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 450V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 100W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	パッケージ: TO-220-3	在庫190,416	5A	450V	1.5V @ 500mA, 2.5A	1mA	-	100W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2N6487G	ON Semiconductor	TRANS NPN 60V 15A TO-220AB Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V Power - Max: 1.8W Frequency - Transition: 5MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫6,888	15A	60V	3.5V @ 5A, 15A	1mA	20 @ 5A, 4V	1.8W	5MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
DSC9A01S0L	Panasonic Electronic Components	TRANS NPN 40V 0.05A SSMINI3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3-B	パッケージ: SC-89, SOT-490	在庫5,712	50mA	40V	200mV @ 1mA, 10mA	1µA	600 @ 2mA, 10V	125mW	150MHz	150°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F3-B
KSC388CYTA	Fairchild/ON Semiconductor	TRANS NPN 25V 0.05A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1.5mA, 15mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 12.5mA, 12.5V Power - Max: 300mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫4,560	50mA	25V	200mV @ 1.5mA, 15mA	100nA (ICBO)	20 @ 12.5mA, 12.5V	300mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BD677A	STMicroelectronics	TRANS NPN DARL 60V 4A SOT-32 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32-3	パッケージ: TO-225AA, TO-126-3	在庫145,896	4A	60V	2.8V @ 40mA, 2A	500µA	750 @ 2A, 3V	40W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32-3
BC807-40W-7	Diodes Incorporated	TRANS PNP 45V 0.5A SC70-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	パッケージ: SC-70, SOT-323	在庫864,000	500mA	45V	700mV @ 50mA, 500mA	100nA	250 @ 100mA, 1V	200mW	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
FCX491QTA	Diodes Incorporated	TRANS NPN 60V 1A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1 W Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	パッケージ: -	在庫3,000	1 A	60 V	500mV @ 100mA, 1A	100nA	100 @ 500mA, 5V	1 W	150MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2N2218-PBFREE	Central Semiconductor Corp	TRANS NPN 30V 0.8A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 3 W Frequency - Transition: 250MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	パッケージ: -	Request a Quote	800 mA	30 V	1V @ 50mA, 500mA	10nA (ICBO)	40 @ 150mA, 10V	3 W	250MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
NTE289AMP	NTE Electronics, Inc	TRANS NPN 80V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Power - Max: 600 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	パッケージ: -	Request a Quote	500 mA	80 V	600mV @ 40mA, 400mA	1µA (ICBO)	100 @ 50mA, 5V	600 mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
PN2369A-TIN-LEAD	Central Semiconductor Corp	TRANS NPN 15V 0.2A TO92-3 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 350 mW Frequency - Transition: 500MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: -	在庫23,505	200 mA	15 V	500mV @ 10mA, 100mA	400nA	40 @ 10mA, 1V	350 mW	500MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
JANSL2N3501UB	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC847AW-QF	Nexperia USA Inc.	BC847AW-Q/SOT323/SC-70 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	パッケージ: -	Request a Quote	100 mA	45 V	400mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	200 mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2N4998	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 35 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	パッケージ: -	Request a Quote	2 A	80 V	850mV @ 200µA, 1mA	-	-	35 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
2SB1032K-E	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR, PNP Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Power - Max: 80 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	パッケージ: -	Request a Quote	10 A	120 V	3V @ 100mA, 10A	10µA	1000 @ 5A, 3V	80 W	-	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
JANTXV2N6650	Microchip Technology	TRANS PNP DARL 80V 10A TO204AA Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Power - Max: 5 W Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3)	パッケージ: -	Request a Quote	10 A	80 V	3V @ 100mA, 10A	1mA (ICBO)	1000 @ 5A, 3V	5 W	-	-65°C ~ 175°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)
JANTX2N2432AUB	Microchip Technology	TRANS NPN 30V 0.1A UB Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	パッケージ: -	Request a Quote	100 mA	30 V	-	-	-	-	-	200°C (TJ)	Surface Mount	4-SMD, No Lead	UB

2SD2206,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 100V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫3,312

2A

100V

1.5V @ 1mA, 1A

10µA (ICBO)

2000 @ 1A, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

JANS2N3439UA

Microsemi Corporation

TRANS NPN 350V 1A UA

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

パッケージ: 4-SMD, No Lead

在庫3,920

1A

350V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

BD646-S

Bourns Inc.

TRANS PNP DARL 60V 8A

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 50mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

パッケージ: TO-220-3

在庫4,512

8A

60V

2.5V @ 50mA, 5A

500µA

750 @ 3A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

BC212B_J35Z

Fairchild/ON Semiconductor

TRANS PNP 50V 0.1A TO-9

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫7,440

100mA

50V

600mV @ 5mA, 100mA

15nA (ICBO)

60 @ 2mA, 5V

350mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC5024RTU

Fairchild/ON Semiconductor

TRANS NPN 500V 10A TO-3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 800mA, 5V
Power - Max: 90W
Frequency - Transition: 18MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

在庫5,104

10A

500V

1V @ 800mA, 4A

10µA (ICBO)

15 @ 800mA, 5V

90W

18MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

KSD1221OTU

Fairchild/ON Semiconductor

TRANS NPN 60V 3A I-PAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-Pak

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫60,480

3A

60V

1V @ 300mA, 3A

100µA (ICBO)

60 @ 500mA, 5V

1W

3MHz

150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-Pak

KSP93BU

Fairchild/ON Semiconductor

TRANS PNP 200V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA)

在庫6,992

500mA

200V

500mV @ 2mA, 20mA

250nA (ICBO)

25 @ 30mA, 10V

625mW

50MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

ZUMT717TC

Diodes Incorporated

TRANS PNP 12V 1.25A SC70-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.25A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1.25A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 500mW
Frequency - Transition: 220MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

在庫7,616

1.25A

12V

240mV @ 100mA, 1.25A

10nA

200 @ 500mA, 2V

500mW

220MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

ZTX601ASTOA

Diodes Incorporated

TRANS NPN DARL 160V 1A E-LINE

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

パッケージ: E-Line-3, Formed Leads

在庫6,176

1A

160V

1.2V @ 10mA, 1A

10µA

2000 @ 500mA, 10V

1W

250MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

2N3904_D10Z

Fairchild/ON Semiconductor

TRANS NPN 40V 0.2A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫7,280

200mA

40V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

TIP127FP

STMicroelectronics

TRANS PNP DARL 100V 5A TO-220FP

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP

パッケージ: TO-220-3 Full Pack

在庫63,792

5A

100V

4V @ 20mA, 5A

500µA

1000 @ 3A, 3V

2W

-

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220FP

BC848CE6433HTMA1

Infineon Technologies

TRANS NPN 30V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫7,344

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

330mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

JANTXV2N2218

Microsemi Corporation

TRANS NPN 30V 0.8A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

パッケージ: TO-205AD, TO-39-3 Metal Can

在庫3,232

800mA

30V

1.6V @ 50mA, 500mA

10nA

40 @ 150mA, 10V

800mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

MMBT3906-TP

Micro Commercial Co

TRANS PNP 40V 0.2A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫19,296

200mA

40V

400mV @ 5mA, 50mA

100nA (ICBO)

100 @ 10mA, 1V

300mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BUT11A

Fairchild/ON Semiconductor

TRANS NPN 450V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 100W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

パッケージ: TO-220-3

在庫190,416

5A

450V

1.5V @ 500mA, 2.5A

1mA

-

100W

-

150°C (TJ)

Through Hole

TO-220-3

2N6487G

ON Semiconductor

TRANS NPN 60V 15A TO-220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Power - Max: 1.8W
Frequency - Transition: 5MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫6,888

15A

60V

3.5V @ 5A, 15A

1mA

20 @ 5A, 4V

1.8W

5MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

DSC9A01S0L

Panasonic Electronic Components

TRANS NPN 40V 0.05A SSMINI3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V
Power - Max: 125mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B

パッケージ: SC-89, SOT-490

在庫5,712

50mA

40V

200mV @ 1mA, 10mA

1µA

600 @ 2mA, 10V

125mW

150MHz

150°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F3-B

KSC388CYTA

Fairchild/ON Semiconductor

TRANS NPN 25V 0.05A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1.5mA, 15mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 12.5mA, 12.5V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫4,560

50mA

25V

200mV @ 1.5mA, 15mA

100nA (ICBO)

20 @ 12.5mA, 12.5V

300mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BD677A

STMicroelectronics

TRANS NPN DARL 60V 4A SOT-32

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3

パッケージ: TO-225AA, TO-126-3

在庫145,896

4A

60V

2.8V @ 40mA, 2A

500µA

750 @ 2A, 3V

40W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

SOT-32-3

BC807-40W-7

Diodes Incorporated

TRANS PNP 45V 0.5A SC70-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

在庫864,000

500mA

45V

700mV @ 50mA, 500mA

100nA

250 @ 100mA, 1V

200mW

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

FCX491QTA

Diodes Incorporated

TRANS NPN 60V 1A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1 W
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

パッケージ: -

在庫3,000

1 A

60 V

500mV @ 100mA, 1A

100nA

100 @ 500mA, 5V

1 W

150MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2N2218-PBFREE

Central Semiconductor Corp

TRANS NPN 30V 0.8A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 3 W
Frequency - Transition: 250MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

パッケージ: -

Request a Quote

800 mA

30 V

1V @ 50mA, 500mA

10nA (ICBO)

40 @ 150mA, 10V

3 W

250MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

NTE289AMP

NTE Electronics, Inc

TRANS NPN 80V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Power - Max: 600 mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

パッケージ: -

Request a Quote

500 mA

80 V

600mV @ 40mA, 400mA

1µA (ICBO)

100 @ 50mA, 5V

600 mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

PN2369A-TIN-LEAD

Central Semiconductor Corp

TRANS NPN 15V 0.2A TO92-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 350 mW
Frequency - Transition: 500MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: -

在庫23,505

200 mA

15 V

500mV @ 10mA, 100mA

400nA

40 @ 10mA, 1V

350 mW

500MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

JANSL2N3501UB

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

BC847AW-QF

Nexperia USA Inc.

BC847AW-Q/SOT323/SC-70

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

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100 mA

45 V

400mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

200 mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2N4998

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 35 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

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2 A

80 V

850mV @ 200µA, 1mA

-

35 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

2SB1032K-E

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR, PNP

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 80 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

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10 A

120 V

3V @ 100mA, 10A

10µA

1000 @ 5A, 3V

80 W

-

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

JANTXV2N6650

Microchip Technology

TRANS PNP DARL 80V 10A TO204AA

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 5 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)

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10 A

80 V

3V @ 100mA, 10A

1mA (ICBO)

1000 @ 5A, 3V

5 W

-

-65°C ~ 175°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AA (TO-3)

JANTX2N2432AUB

Microchip Technology

TRANS NPN 30V 0.1A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

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100 mA

30 V

-

200°C (TJ)

Surface Mount

4-SMD, No Lead

UB