ページ 600 - トランジスタ - バイポーラ（BJT） - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANTXV2N2432A	Microsemi Corporation	TRANS NPN 45V 0.1A TO-18 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 300mW Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	パッケージ: TO-206AA, TO-18-3 Metal Can	在庫5,600	100mA	45V	0.15mV @ 500µA, 10V	10nA	80 @ 1mA, 5V	300mW	-	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
BD897A-S	Bourns Inc.	TRANS NPN DARL 60V 8A Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 16mA, 4A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	パッケージ: TO-220-3	在庫3,312	8A	60V	2.8V @ 16mA, 4A	500µA	750 @ 4A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
2STD2360T4	STMicroelectronics	TRANS PNP 60V 3A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Power - Max: 15W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,512	3A	60V	500mV @ 150mA, 3A	100nA (ICBO)	160 @ 1A, 2V	15W	130MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
2STL1360	STMicroelectronics	TRANS NPN 60V 3A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Power - Max: 1.2W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92L	パッケージ: TO-226-3, TO-92-3 Long Body	在庫4,224	3A	60V	500mV @ 150mA, 3A	100nA (ICBO)	160 @ 1A, 2V	1.2W	130MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92L
MPSA56G	ON Semiconductor	TRANS PNP 80V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫12,600	500mA	80V	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N3390_D75Z	Fairchild/ON Semiconductor	TRANS NPN 25V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 4.5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫2,496	500mA	25V	-	100nA (ICBO)	400 @ 2mA, 4.5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC849AMTF	Fairchild/ON Semiconductor	TRANS NPN 30V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 310mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫539,376	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	310mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
ZTX603STZ	Diodes Incorporated	TRANS NPN DARL 80V 1A E-LINE Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	パッケージ: E-Line-3, Formed Leads	在庫3,376	1A	80V	1V @ 1mA, 1A	10µA	2000 @ 1A, 5V	1W	150MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
DSC9G02D0L	Panasonic Electronic Components	TRANS NPN 30V 0.015A SSMINI3 Transistor Type: NPN Current - Collector (Ic) (Max): 15mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Power - Max: 125mW Frequency - Transition: 650MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3-B	パッケージ: SC-89, SOT-490	在庫7,472	15mA	30V	-	-	65 @ 1mA, 6V	125mW	650MHz	150°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F3-B
TIP121TU	Fairchild/ON Semiconductor	TRANS NPN DARL 80V 5A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	パッケージ: TO-220-3	在庫230,868	5A	80V	4V @ 20mA, 5A	500µA	1000 @ 3A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FJD3305H1TM	Fairchild/ON Semiconductor	TRANS NPN 400V 4A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Power - Max: 1.1W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫7,200	4A	400V	1V @ 1A, 4A	1µA (ICBO)	8 @ 2A, 5V	1.1W	4MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA
CMNT3904E TR	Central Semiconductor Corp	TRANS NPN 60V 0.2A SOT953 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-953 Supplier Device Package: SOT-953	パッケージ: SOT-953	在庫7,536	200mA	40V	200mV @ 5mA, 50mA	-	100 @ 10mA, 1V	250mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	SOT-953	SOT-953
PHPT60610NYX	Nexperia USA Inc.	IC TRANS NPN 60V 10A LFPAK56 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 360mV @ 1A, 10A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V Power - Max: 1.5W Frequency - Transition: 140MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8	パッケージ: SC-100, SOT-669	在庫15,402	10A	60V	360mV @ 1A, 10A	100nA	240 @ 500mA, 2V	1.5W	140MHz	175°C (TJ)	Surface Mount	SC-100, SOT-669	LFPAK56, Power-SO8
BC807-40QAZ	Nexperia USA Inc.	TRANS PNP 45V 0.5A DFN1010D-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Power - Max: 900mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3	パッケージ: 3-XDFN Exposed Pad	在庫157,110	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	40 @ 500mA, 1V	900mW	80MHz	150°C (TJ)	Surface Mount	3-XDFN Exposed Pad	DFN1010D-3
FCX591TA	Diodes Incorporated	TRANS PNP 60V 1A SOT-89 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	パッケージ: TO-243AA	在庫1,142,244	1A	60V	600mV @ 100mA, 1A	100nA	100 @ 500mA, 5V	1W	150MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
MMBT2484LT1G	ON Semiconductor	TRANS NPN 60V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Power - Max: 225mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫992,160	100mA	60V	350mV @ 100µA, 1mA	10nA (ICBO)	250 @ 1mA, 5V	225mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SA1162-Y,LF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A S-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫288,000	150mA	50V	300mV @ 10mA, 100mA	100µA (ICBO)	120 @ 2mA, 6V	150mW	80MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
TIP29G	onsemi	POWER BIPOLAR TRANSISTOR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V Power - Max: 2 W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	パッケージ: -	Request a Quote	1 A	40 V	700mV @ 125mA, 1A	300µA	40 @ 200mA, 4V	2 W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
PBHV8110DA_R1_00001	Panjit International Inc.	TRANS NPN 100V 1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V Power - Max: 1.25 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: -	在庫3,123	1 A	100 V	450mV @ 100mA, 1A	500nA (ICBO)	140 @ 150mA, 2V	1.25 W	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BF821-QVL	Nexperia USA Inc.	BF821-Q/SOT23/TO-236AB Transistor Type: PNP Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Power - Max: 250 mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	パッケージ: -	Request a Quote	50 mA	300 V	800mV @ 5mA, 30mA	10nA (ICBO)	50 @ 25mA, 20V	250 mW	60MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
JANTXV2N3500U4	Microchip Technology	TRANS NPN 150V 0.3A U4 Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	パッケージ: -	Request a Quote	300 mA	150 V	400mV @ 15mA, 150mA	50nA (ICBO)	40 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
MMBT5401-D87Z	onsemi	TRANS PNP 150V 0.6A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 350 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: -	Request a Quote	600 mA	150 V	500mV @ 5mA, 50mA	50nA (ICBO)	60 @ 10mA, 5V	350 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SA1179-6-TB-E	Sanyo	PNP SILICON TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Power - Max: 200 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	パッケージ: -	Request a Quote	150 mA	50 V	500mV @ 5mA, 50mA	100nA (ICBO)	200 @ 1mA, 6V	200 mW	180MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
JANSD2N2222AUB-TR	Microchip Technology	TRANS NPN 50V 0.8A UB Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	パッケージ: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C	Surface Mount	3-SMD, No Lead	UB
2N3752	General Semiconductor	TRANS 80V 5A TO111 Transistor Type: - Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Power - Max: 30 W Frequency - Transition: 50MHz Operating Temperature: - Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Supplier Device Package: TO-111	パッケージ: -	Request a Quote	5 A	80 V	250mV @ 50mA, 1A	100nA (ICBO)	100 @ 1A, 5V	30 W	50MHz	-	Stud Mount	TO-111-4, Stud	TO-111
2N3487	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 7.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 115 W Frequency - Transition: - Operating Temperature: - Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	パッケージ: -	Request a Quote	7.5 A	60 V	-	-	-	115 W	-	-	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
2N4926	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N6229	Microchip Technology	PNP POWER TRANSISTOR SILICON AMP Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

JANTXV2N2432A

Microsemi Corporation

TRANS NPN 45V 0.1A TO-18

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Power - Max: 300mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

パッケージ: TO-206AA, TO-18-3 Metal Can

在庫5,600

100mA

45V

0.15mV @ 500µA, 10V

10nA

80 @ 1mA, 5V

300mW

-

-65°C ~ 175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

BD897A-S

Bourns Inc.

TRANS NPN DARL 60V 8A

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 16mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

パッケージ: TO-220-3

在庫3,312

8A

60V

2.8V @ 16mA, 4A

500µA

750 @ 4A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

2STD2360T4

STMicroelectronics

TRANS PNP 60V 3A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Power - Max: 15W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫6,512

3A

60V

500mV @ 150mA, 3A

100nA (ICBO)

160 @ 1A, 2V

15W

130MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

2STL1360

STMicroelectronics

TRANS NPN 60V 3A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Power - Max: 1.2W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92L

パッケージ: TO-226-3, TO-92-3 Long Body

在庫4,224

3A

60V

500mV @ 150mA, 3A

100nA (ICBO)

160 @ 1A, 2V

1.2W

130MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92L

MPSA56G

ON Semiconductor

TRANS PNP 80V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA)

在庫12,600

500mA

80V

250mV @ 10mA, 100mA

100nA

100 @ 100mA, 1V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N3390_D75Z

Fairchild/ON Semiconductor

TRANS NPN 25V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 4.5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫2,496

500mA

25V

-

100nA (ICBO)

400 @ 2mA, 4.5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC849AMTF

Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 310mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫539,376

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

310mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

ZTX603STZ

Diodes Incorporated

TRANS NPN DARL 80V 1A E-LINE

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

パッケージ: E-Line-3, Formed Leads

在庫3,376

1A

80V

1V @ 1mA, 1A

10µA

2000 @ 1A, 5V

1W

150MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

DSC9G02D0L

Panasonic Electronic Components

TRANS NPN 30V 0.015A SSMINI3

Transistor Type: NPN
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Power - Max: 125mW
Frequency - Transition: 650MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B

パッケージ: SC-89, SOT-490

在庫7,472

15mA

30V

-

65 @ 1mA, 6V

125mW

650MHz

150°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F3-B

TIP121TU

Fairchild/ON Semiconductor

TRANS NPN DARL 80V 5A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

パッケージ: TO-220-3

在庫230,868

5A

80V

4V @ 20mA, 5A

500µA

1000 @ 3A, 3V

2W

-

150°C (TJ)

Through Hole

TO-220-3

FJD3305H1TM

Fairchild/ON Semiconductor

TRANS NPN 400V 4A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 1.1W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫7,200

4A

400V

1V @ 1A, 4A

1µA (ICBO)

8 @ 2A, 5V

1.1W

4MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252AA

CMNT3904E TR

Central Semiconductor Corp

TRANS NPN 60V 0.2A SOT953

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-953
Supplier Device Package: SOT-953

パッケージ: SOT-953

在庫7,536

200mA

40V

200mV @ 5mA, 50mA

-

100 @ 10mA, 1V

250mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

SOT-953

PHPT60610NYX

Nexperia USA Inc.

IC TRANS NPN 60V 10A LFPAK56

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 1A, 10A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V
Power - Max: 1.5W
Frequency - Transition: 140MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8

パッケージ: SC-100, SOT-669

在庫15,402

10A

60V

360mV @ 1A, 10A

100nA

240 @ 500mA, 2V

1.5W

140MHz

175°C (TJ)

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

BC807-40QAZ

Nexperia USA Inc.

TRANS PNP 45V 0.5A DFN1010D-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 900mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3

パッケージ: 3-XDFN Exposed Pad

在庫157,110

500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

40 @ 500mA, 1V

900mW

80MHz

150°C (TJ)

Surface Mount

3-XDFN Exposed Pad

DFN1010D-3

FCX591TA

Diodes Incorporated

TRANS PNP 60V 1A SOT-89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

パッケージ: TO-243AA

在庫1,142,244

1A

60V

600mV @ 100mA, 1A

100nA

100 @ 500mA, 5V

1W

150MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

MMBT2484LT1G

ON Semiconductor

TRANS NPN 60V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Power - Max: 225mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫992,160

100mA

60V

350mV @ 100µA, 1mA

10nA (ICBO)

250 @ 1mA, 5V

225mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SA1162-Y,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫288,000

150mA

50V

300mV @ 10mA, 100mA

100µA (ICBO)

120 @ 2mA, 6V

150mW

80MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

TIP29G

onsemi

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Power - Max: 2 W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

パッケージ: -

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1 A

40 V

700mV @ 125mA, 1A

300µA

40 @ 200mA, 4V

2 W

3MHz

150°C (TJ)

Through Hole

TO-220-3

PBHV8110DA_R1_00001

Panjit International Inc.

TRANS NPN 100V 1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Power - Max: 1.25 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: -

在庫3,123

1 A

100 V

450mV @ 100mA, 1A

500nA (ICBO)

140 @ 150mA, 2V

1.25 W

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BF821-QVL

Nexperia USA Inc.

BF821-Q/SOT23/TO-236AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 250 mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

パッケージ: -

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50 mA

300 V

800mV @ 5mA, 30mA

10nA (ICBO)

50 @ 25mA, 20V

250 mW

60MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

JANTXV2N3500U4

Microchip Technology

TRANS NPN 150V 0.3A U4

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

パッケージ: -

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300 mA

150 V

400mV @ 15mA, 150mA

50nA (ICBO)

40 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

MMBT5401-D87Z

onsemi

TRANS PNP 150V 0.6A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 350 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: -

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600 mA

150 V

500mV @ 5mA, 50mA

50nA (ICBO)

60 @ 10mA, 5V

350 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SA1179-6-TB-E

Sanyo

PNP SILICON TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Power - Max: 200 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

パッケージ: -

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150 mA

50 V

500mV @ 5mA, 50mA

100nA (ICBO)

200 @ 1mA, 6V

200 mW

180MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

JANSD2N2222AUB-TR

Microchip Technology

TRANS NPN 50V 0.8A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

パッケージ: -

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800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C

Surface Mount

3-SMD, No Lead

UB

2N3752

General Semiconductor

TRANS 80V 5A TO111

Transistor Type: -
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 30 W
Frequency - Transition: 50MHz
Operating Temperature: -
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Supplier Device Package: TO-111

パッケージ: -

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5 A

80 V

250mV @ 50mA, 1A

100nA (ICBO)

100 @ 1A, 5V

30 W

50MHz

-

Stud Mount

TO-111-4, Stud

TO-111

2N3487

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 7.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 115 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Stud Mount
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package: TO-61

パッケージ: -

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7.5 A

60 V

-

115 W

-

Stud Mount

TO-211MA, TO-210AC, TO-61-4, Stud

TO-61

2N4926

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

2N6229

Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-