ページ 624 - トランジスタ - バイポーラ（BJT） - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - バイポーラ（BJT） - シングル

レコード 20,307
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在庫
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JAN2N6251
Microsemi Corporation

TRANS NPN 350V 10A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V
  • Power - Max: 5.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
パッケージ: TO-3
在庫4,912
10A
350V
1.5V @ 1.67A, 10A
1mA
6 @ 10A, 3V
5.5W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-3
TO-3 (TO-204AA)
FJPF13007H2TTU
Fairchild/ON Semiconductor

TRANS NPN 400V 8A TO-220F

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
  • Power - Max: 40W
  • Frequency - Transition: 4MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
パッケージ: TO-220-3 Full Pack
在庫5,520
8A
400V
3V @ 2A, 8A
-
26 @ 2A, 5V
40W
4MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
KSD1616LPWD
Fairchild/ON Semiconductor

TRANS NPN 50V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
  • Power - Max: 750mW
  • Frequency - Transition: 160MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫4,864
1A
50V
300mV @ 50mA, 1A
100nA (ICBO)
300 @ 100mA, 2V
750mW
160MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
ZTX1048ASTOB
Diodes Incorporated

TRANS NPN 17.5V 4A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 17.5V
  • Vce Saturation (Max) @ Ib, Ic: 245mV @ 20mA, 4A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
パッケージ: E-Line-3, Formed Leads
在庫3,120
4A
17.5V
245mV @ 20mA, 4A
10nA
300 @ 1A, 2V
1W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot MMJT9410T1
ON Semiconductor

TRANS NPN 30V 3A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 800mA, 1V
  • Power - Max: 3W
  • Frequency - Transition: 72MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: TO-261-4, TO-261AA
在庫14,916
3A
30V
450mV @ 300mA, 3A
-
85 @ 800mA, 1V
3W
72MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BCW61DE6327HTSA1
Infineon Technologies

TRANS PNP 32V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫6,400
100mA
32V
550mV @ 1.25mA, 50mA
20nA (ICBO)
380 @ 2mA, 5V
330mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
2SB1205T-E
ON Semiconductor

TRANS PNP 20V 5A TP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 320MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
パッケージ: TO-251-3 Short Leads, IPak, TO-251AA
在庫3,232
5A
20V
500mV @ 60mA, 3A
500nA (ICBO)
200 @ 500mA, 2V
1W
320MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
hot APT13003LZTR-G1
Diodes Incorporated

TRANS NPN 450V 0.8A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 200mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 300mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫17,280
800mA
450V
500mV @ 40mA, 200mA
-
6 @ 300mA, 10V
800mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
JANTX2N2605
Microsemi Corporation

TRANS PNP 60V 0.03A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46 (TO-206AB)
パッケージ: TO-206AB, TO-46-3 Metal Can
在庫5,456
30mA
60V
300mV @ 500µA, 10mA
10nA
100 @ 10mA, 5V
400mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46 (TO-206AB)
MMBT4403_D87Z
Fairchild/ON Semiconductor

TRANS PNP 40V 0.6A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 350mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫5,648
600mA
40V
750mV @ 50mA, 500mA
-
100 @ 150mA, 2V
350mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2SD19960RA
Panasonic Electronic Components

TRANS NPN 20V 0.5A MT-1

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: MT-1-A1
パッケージ: 3-SIP
在庫19,548
500mA
20V
400mV @ 20mA, 500mA
100nA (ICBO)
200 @ 500mA, 2V
600mW
200MHz
150°C (TJ)
Through Hole
3-SIP
MT-1-A1
hot 2N6284G
ON Semiconductor

TRANS NPN DARL 100V 20A TO3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
  • Power - Max: 160W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
パッケージ: TO-204AA, TO-3
在庫6,504
20A
100V
3V @ 200mA, 20A
1mA
750 @ 10A, 3V
160W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
hot TIP36CW
STMicroelectronics

TRANS PNP 100V 25A TO-247

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
  • Power - Max: 125W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫29,784
25A
100V
4V @ 5A, 25A
1mA
10 @ 15A, 4V
125W
3MHz
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot 2N5551TA
Fairchild/ON Semiconductor

TRANS NPN 160V 0.6A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫7,424
600mA
160V
200mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot MMBTA64LT1G
ON Semiconductor

TRANS PNP DARL 30V 0.5A SOT23

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫8,388
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
20000 @ 100mA, 5V
225mW
125MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2SA1015-GR-BP
Micro Commercial Co

TRANS PNP 50V 0.15A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 400 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
パッケージ: -
Request a Quote
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
400 mW
80MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BCV27-QR
Nexperia USA Inc.

BCV27-Q/SOT23/TO-236AB

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
パッケージ: -
Request a Quote
500 mA
30 V
1V @ 100µA, 100mA
100nA
20000 @ 100mA, 5V
250 mW
-
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
BD135-10-BP
Micro Commercial Co

TRANS NPN 45V 1.5A TO126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1.25 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
パッケージ: -
Request a Quote
1.5 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1.25 W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
BC857A-AU_R1_000A1
Panjit International Inc.

TRANS PNP 45V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 330 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: -
在庫8,970
100 mA
45 V
650mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
330 mW
200MHz
-50°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
CP307-MPSA27-CT
Central Semiconductor Corp

TRANS NPN DARL 60V 0.5A DIE

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 625 mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
500 mA
60 V
1.5V @ 100µA, 100mA
500nA
10000 @ 100mA, 5V
625 mW
125MHz
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
MJ10004
NTE Electronics, Inc

TRANS NPN DARL 350V 20A TO3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 20 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 20A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 5V
  • Power - Max: 175 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
パッケージ: -
Request a Quote
20 A
350 V
3V @ 2A, 20A
250µA
50 @ 5A, 5V
175 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
MPS4356RLRAG
onsemi

SS T092 GP XSTR PNP 80V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SD734E
onsemi

2SD734 - NPN EPITAXIAL PLANAR SI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700 mA
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
  • Power - Max: 600 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: 3-NP
パッケージ: -
Request a Quote
700 mA
20 V
300mV @ 50mA, 500mA
1µA (ICBO)
100 @ 50mA, 2V
600 mW
250MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
3-NP
GSBC807-40W
Good-Ark Semiconductor

TRANSISTOR, PNP, -500MA, -50V, 2

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: -
在庫16,950
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
200 mW
80MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BC807-16W-MIX
Nexperia USA Inc.

TRANS PNP 45V 0.5A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: -
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500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
200 mW
80MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
DI2579N
Diotec Semiconductor

BJT SOT223 700V NPN 1.25W 150C

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 350mA, 5V
  • Power - Max: 1.25 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: -
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1 A
400 V
1V @ 50mA, 350mA
1mA
15 @ 350mA, 5V
1.25 W
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2N3716-PBFREE
Central Semiconductor Corp

TRANS NPN 80V 10A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
  • Power - Max: 150 W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
パッケージ: -
在庫3
10 A
80 V
800mV @ 500mA, 5A
-
50 @ 1A, 2V
150 W
4MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
KTA1504-Y-TP
Micro Commercial Co

TRANS PNP 50V 0.15A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 150 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
パッケージ: -
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150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
150 mW
80MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23