ページ 638 - トランジスタ - バイポーラ（BJT） - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SMBT 3906 B5003	Infineon Technologies	TRANS PNP 40V 0.2A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫6,720	200mA	40V	400mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	330mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
2N5192 SL H	Central Semiconductor Corp	TRANS NPN 80V 4A TO126 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V Power - Max: 40W Frequency - Transition: 2MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	パッケージ: TO-225AA, TO-126-3	在庫2,336	4A	80V	1.4V @ 1A, 4A	1mA	20 @ 1.5A, 2V	40W	2MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
JAN2N1016D	Microsemi Corporation	TRANS NPN 100V 7.5A Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,216	-	-	-	-	-	-	-	-	-	-	-
2SA2199T2LR	Rohm Semiconductor	TRANS PNP 50V 0.1A VMN3 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 110MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-923F Supplier Device Package: VMN3	パッケージ: SOT-923F	在庫7,168	100mA	50V	300mV @ 2.5mA, 25mA	100nA (ICBO)	180 @ 2mA, 6V	150mW	110MHz	150°C (TJ)	Surface Mount	SOT-923F	VMN3
KSE2955T	Fairchild/ON Semiconductor	TRANS PNP 60V 10A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 600mW Frequency - Transition: 2MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	パッケージ: TO-220-3	在庫4,528	10A	60V	8V @ 3.3A, 10A	700µA	20 @ 4A, 4V	600mW	2MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
ZTX549STOA	Diodes Incorporated	TRANS PNP 30V 1A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	パッケージ: E-Line-3, Formed Leads	在庫3,056	1A	30V	750mV @ 200mA, 2A	100nA (ICBO)	100 @ 500mA, 2V	1W	100MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
ZX5T851ZTA	Diodes Incorporated	TRANS NPN 60V 5A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 230mV @ 300mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Power - Max: 2.1W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	パッケージ: TO-243AA	在庫24,000	5A	60V	230mV @ 300mA, 6A	20nA (ICBO)	100 @ 2A, 1V	2.1W	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
MMS8550-L-TP	Micro Commercial Co	TRANS PREBIAS PNP 25V SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,808	500mA	25V	600mV @ 50mA, 500mA	100nA (ICBO)	120 @ 50mA, 1V	300mW	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PBSS5540X,135	Nexperia USA Inc.	TRANS PNP 40V 4A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Power - Max: 1.6W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	パッケージ: TO-243AA	在庫6,672	4A	40V	375mV @ 500mA, 5A	100nA (ICBO)	150 @ 2A, 2V	1.6W	60MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
FJA13009TU	Fairchild/ON Semiconductor	TRANS NPN 400V 12A TO-3P Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Power - Max: 130W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	パッケージ: TO-3P-3, SC-65-3	在庫122,028	12A	400V	3V @ 3A, 12A	-	8 @ 5A, 5V	130W	4MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
ZXTN19020DFFTA	Diodes Incorporated	TRANS NPN 20V 6.5A SOT23F-3 Transistor Type: NPN Current - Collector (Ic) (Max): 6.5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 190mV @ 180mA, 6.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Power - Max: 1.5W Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Supplier Device Package: SOT-23F	パッケージ: SOT-23-3 Flat Leads	在庫111,000	6.5A	20V	190mV @ 180mA, 6.5A	50nA (ICBO)	300 @ 100mA, 2V	1.5W	160MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 Flat Leads	SOT-23F
KSD471ACYBU	Fairchild/ON Semiconductor	TRANS NPN 30V 1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 800mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫77,814	1A	30V	500mV @ 100mA, 1A	100nA (ICBO)	120 @ 100mA, 1V	800mW	130MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SAR522MT2L	Rohm Semiconductor	TRANS PNP 20V 0.2A VMT3 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Power - Max: 150mW Frequency - Transition: 350MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	パッケージ: SOT-723	在庫177,120	200mA	20V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 1mA, 2V	150mW	350MHz	150°C (TJ)	Surface Mount	SOT-723	VMT3
2N4399	Central Semiconductor Corp	TRANS PNP 60V 30A TO-3 Transistor Type: PNP Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Power - Max: 5W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	パッケージ: TO-204AA, TO-3	在庫6,480	30A	60V	4V @ 6A, 30A	5mA	15 @ 15A, 2V	5W	4MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
NTE2406	NTE Electronics, Inc	TRANS NPN 40V 0.6A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 225 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: -	Request a Quote	600 mA	40 V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	225 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC2612	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 3A, 5V Power - Max: 30 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: -	Request a Quote	3 A	400 V	1V @ 300mA, 1.5A	100µA	7 @ 3A, 5V	30 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SC4615E-TL-E	onsemi	BIP NPN 1A 400V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC857A	Taiwan Semiconductor Corporation	SOT-23, -50V, -0.1A, PNP BIPOLAR Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: -	Request a Quote	100 mA	45 V	650mV @ 5mA, 100mA	100nA (ICBO)	125 @ 2mA, 5V	200 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC1923-O-AP	Micro Commercial Co	TRANS NPN 30V 0.02A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Power - Max: 100 mW Frequency - Transition: 500MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	パッケージ: -	Request a Quote	20 mA	30 V	-	500nA (ICBO)	70 @ 1mA, 6V	100 mW	500MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
2C3440-MSCL	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N3868U4	Microchip Technology	TRANS PNP 60V 0.003A U4 Transistor Type: PNP Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	パッケージ: -	Request a Quote	3 mA	60 V	1.5V @ 250mA, 2.5A	100µA (ICBO)	30 @ 1.5A, 2V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
2N6182	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 60 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	パッケージ: -	Request a Quote	10 A	80 V	700mV @ 200µA, 2mA	-	-	60 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
2N4403ZL1	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 625 mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 (TO-226)	パッケージ: -	Request a Quote	600 mA	40 V	750mV @ 50mA, 500mA	100nA	100 @ 150mA, 2V	625 mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92 (TO-226)
NTE131	NTE Electronics, Inc	TRANS PNP 32V 1A TO66 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Vce Saturation (Max) @ Ib, Ic: 80mV @ 100mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 36 @ 1A, 0V Power - Max: 6 W Frequency - Transition: - Operating Temperature: 90°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	パッケージ: -	Request a Quote	1 A	32 V	80mV @ 100mA, 1A	1mA	36 @ 1A, 0V	6 W	-	90°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66
2C5157	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC2458-GR-AP	Micro Commercial Co	TRANS NPN 50V 0.15A TO92S Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	パッケージ: -	Request a Quote	150 mA	50 V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	200 mW	80MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
SMMJT350T3G	onsemi	TRANS PNP 300V 0.5A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 2.75 W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 (TO-261)	パッケージ: -	Request a Quote	500 mA	300 V	-	100nA (ICBO)	30 @ 50mA, 10V	2.75 W	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223 (TO-261)
2SC945-Y-AP	Micro Commercial Co	TRANS NPN 50V 0.15A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 400 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	パッケージ: -	Request a Quote	150 mA	50 V	300mV @ 10mA, 100mA	100nA	120 @ 1mA, 6V	400 mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92

SMBT 3906 B5003

Infineon Technologies

TRANS PNP 40V 0.2A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫6,720

200mA

40V

400mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

330mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

2N5192 SL H

Central Semiconductor Corp

TRANS NPN 80V 4A TO126

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Power - Max: 40W
Frequency - Transition: 2MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

パッケージ: TO-225AA, TO-126-3

在庫2,336

4A

80V

1.4V @ 1A, 4A

1mA

20 @ 1.5A, 2V

40W

2MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

JAN2N1016D

Microsemi Corporation

TRANS NPN 100V 7.5A

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,216

-

2SA2199T2LR

Rohm Semiconductor

TRANS PNP 50V 0.1A VMN3

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-923F
Supplier Device Package: VMN3

パッケージ: SOT-923F

在庫7,168

100mA

50V

300mV @ 2.5mA, 25mA

100nA (ICBO)

180 @ 2mA, 6V

150mW

110MHz

150°C (TJ)

Surface Mount

SOT-923F

VMN3

KSE2955T

Fairchild/ON Semiconductor

TRANS PNP 60V 10A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 600mW
Frequency - Transition: 2MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

パッケージ: TO-220-3

在庫4,528

10A

60V

8V @ 3.3A, 10A

700µA

20 @ 4A, 4V

600mW

2MHz

150°C (TJ)

Through Hole

TO-220-3

ZTX549STOA

Diodes Incorporated

TRANS PNP 30V 1A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

パッケージ: E-Line-3, Formed Leads

在庫3,056

1A

30V

750mV @ 200mA, 2A

100nA (ICBO)

100 @ 500mA, 2V

1W

100MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

ZX5T851ZTA

Diodes Incorporated

TRANS NPN 60V 5A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 230mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 2.1W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

パッケージ: TO-243AA

在庫24,000

5A

60V

230mV @ 300mA, 6A

20nA (ICBO)

100 @ 2A, 1V

2.1W

130MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

MMS8550-L-TP

Micro Commercial Co

TRANS PREBIAS PNP 25V SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Power - Max: 300mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,808

500mA

25V

600mV @ 50mA, 500mA

100nA (ICBO)

120 @ 50mA, 1V

300mW

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PBSS5540X,135

Nexperia USA Inc.

TRANS PNP 40V 4A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Power - Max: 1.6W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

パッケージ: TO-243AA

在庫6,672

4A

40V

375mV @ 500mA, 5A

100nA (ICBO)

150 @ 2A, 2V

1.6W

60MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

FJA13009TU

Fairchild/ON Semiconductor

TRANS NPN 400V 12A TO-3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Power - Max: 130W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

パッケージ: TO-3P-3, SC-65-3

在庫122,028

12A

400V

3V @ 3A, 12A

-

8 @ 5A, 5V

130W

4MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

ZXTN19020DFFTA

Diodes Incorporated

TRANS NPN 20V 6.5A SOT23F-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 6.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 180mA, 6.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 1.5W
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Supplier Device Package: SOT-23F

パッケージ: SOT-23-3 Flat Leads

在庫111,000

6.5A

20V

190mV @ 180mA, 6.5A

50nA (ICBO)

300 @ 100mA, 2V

1.5W

160MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 Flat Leads

SOT-23F

KSD471ACYBU

Fairchild/ON Semiconductor

TRANS NPN 30V 1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 800mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA)

在庫77,814

1A

30V

500mV @ 100mA, 1A

100nA (ICBO)

120 @ 100mA, 1V

800mW

130MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SAR522MT2L

Rohm Semiconductor

TRANS PNP 20V 0.2A VMT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Power - Max: 150mW
Frequency - Transition: 350MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

パッケージ: SOT-723

在庫177,120

200mA

20V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 1mA, 2V

150mW

350MHz

150°C (TJ)

Surface Mount

SOT-723

VMT3

2N4399

Central Semiconductor Corp

TRANS PNP 60V 30A TO-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Power - Max: 5W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

パッケージ: TO-204AA, TO-3

在庫6,480

30A

60V

4V @ 6A, 30A

5mA

15 @ 15A, 2V

5W

4MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

NTE2406

NTE Electronics, Inc

TRANS NPN 40V 0.6A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 225 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: -

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600 mA

40 V

1V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

225 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC2612

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 3A, 5V
Power - Max: 30 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: -

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3 A

400 V

1V @ 300mA, 1.5A

100µA

7 @ 3A, 5V

30 W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SC4615E-TL-E

onsemi

BIP NPN 1A 400V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

BC857A

Taiwan Semiconductor Corporation

SOT-23, -50V, -0.1A, PNP BIPOLAR

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: -

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100 mA

45 V

650mV @ 5mA, 100mA

100nA (ICBO)

125 @ 2mA, 5V

200 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC1923-O-AP

Micro Commercial Co

TRANS NPN 30V 0.02A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Power - Max: 100 mW
Frequency - Transition: 500MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

パッケージ: -

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20 mA

30 V

-

500nA (ICBO)

70 @ 1mA, 6V

100 mW

500MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

2C3440-MSCL

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

2N3868U4

Microchip Technology

TRANS PNP 60V 0.003A U4

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

パッケージ: -

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3 mA

60 V

1.5V @ 250mA, 2.5A

100µA (ICBO)

30 @ 1.5A, 2V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

2N6182

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 60 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

パッケージ: -

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10 A

80 V

700mV @ 200µA, 2mA

-

60 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

2N4403ZL1

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 625 mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92 (TO-226)

パッケージ: -

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600 mA

40 V

750mV @ 50mA, 500mA

100nA

100 @ 150mA, 2V

625 mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92 (TO-226)

NTE131

NTE Electronics, Inc

TRANS PNP 32V 1A TO66

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 36 @ 1A, 0V
Power - Max: 6 W
Frequency - Transition: -
Operating Temperature: 90°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66

パッケージ: -

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1 A

32 V

80mV @ 100mA, 1A

1mA

36 @ 1A, 0V

6 W

-

90°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66

2C5157

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

2SC2458-GR-AP

Micro Commercial Co

TRANS NPN 50V 0.15A TO92S

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200 mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

パッケージ: -

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150 mA

50 V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

200 mW

80MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

SMMJT350T3G

onsemi

TRANS PNP 300V 0.5A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 2.75 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223 (TO-261)

パッケージ: -

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500 mA

300 V

-

100nA (ICBO)

30 @ 50mA, 10V

2.75 W

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223 (TO-261)

2SC945-Y-AP

Micro Commercial Co

TRANS NPN 50V 0.15A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 400 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

パッケージ: -

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150 mA

50 V

300mV @ 10mA, 100mA

100nA

120 @ 1mA, 6V

400 mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92