ページ 684 - トランジスタ - バイポーラ(BJT) - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - バイポーラ(BJT) - シングル

レコード 20,307
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在庫
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Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot BCP52-16
STMicroelectronics

TRANS PNP 60V 1A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1.4W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: TO-261-4, TO-261AA
在庫4,645,932
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1.4W
50MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot MPSA44G
ON Semiconductor

TRANS NPN 400V 0.3A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫44,856
300mA
400V
750mV @ 5mA, 50mA
500nA
50 @ 10mA, 10V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MPS6724RLRAG
ON Semiconductor

TRANS NPN DARL 40V 1A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
  • Power - Max: 1W
  • Frequency - Transition: 1GHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫3,616
1A
40V
1.5V @ 2mA, 1A
100nA (ICBO)
4000 @ 1A, 5V
1W
1GHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC859BLT3G
ON Semiconductor

TRANS PNP 30V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫7,168
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
300mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
KSA709OBU
Fairchild/ON Semiconductor

TRANS PNP 150V 0.7A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
  • Power - Max: 800mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫5,264
700mA
150V
400mV @ 20mA, 200mA
100nA (ICBO)
70 @ 50mA, 2V
800mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MPSA06T93
Rohm Semiconductor

TRANS NPN 80V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫7,280
500mA
80V
250mV @ 10mA, 100mA
1µA
100 @ 100mA, 1V
350mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
JANTXV2N5152
Microsemi Corporation

TRANS NPN 80V 2A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
パッケージ: TO-205AD, TO-39-3 Metal Can
在庫5,968
2A
80V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
2SB1203S-TL-H
ON Semiconductor

TRANS PNP 50V 5A TP-FA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: 2-TP-FA
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫5,712
5A
50V
550mV @ 150mA, 3A
1µA (ICBO)
140 @ 500mA, 2V
1W
130MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
2-TP-FA
SJD32CT4G-VF01
ON Semiconductor

TRANS PNP 100V 3A DPAK

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,152
-
-
-
-
-
-
-
-
-
-
-
hot 2N3421
Central Semiconductor Corp

TRANS NPN 80V TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
  • Power - Max: -
  • Frequency - Transition: 40MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
パッケージ: TO-205AD, TO-39-3 Metal Can
在庫4,464
-
80V
-
500nA (ICBO)
40 @ 1A, 2V
-
40MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
CZT5401 TR
Central Semiconductor Corp

TRANS PNP 150V 0.6A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: TO-261-4, TO-261AA
在庫13,560
600mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
2W
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot ZTX956
Diodes Incorporated

TRANS PNP 200V 2A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 1.58W
  • Frequency - Transition: 110MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
パッケージ: E-Line-3
在庫240,960
2A
200V
250mV @ 400mA, 2A
50nA (ICBO)
100 @ 1A, 5V
1.58W
110MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
CBCP68 TR
Central Semiconductor Corp

TRANS NPN 25V SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 2W
  • Frequency - Transition: 65MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: TO-261-4, TO-261AA
在庫14,058
1A
20V
500mV @ 100mA, 1A
10µA (ICBO)
85 @ 500mA, 1V
2W
65MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
STX83003-AP
STMicroelectronics

TRANS NPN 400V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫21,888
1A
400V
1V @ 50mA, 350mA
1mA
16 @ 350mA, 5V
1.5W
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MJD42C1G
ON Semiconductor

TRANS PNP 100V 6A IPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
  • Power - Max: 1.75W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-Pak
パッケージ: TO-251-3 Short Leads, IPak, TO-251AA
在庫13,590
6A
100V
1.5V @ 600mA, 6A
50µA
15 @ 3A, 4V
1.75W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
I-Pak
TIP29-BP
Micro Commercial Co

TRANS NPN 40V 1A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
  • Power - Max: 30W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: TO-220-3
在庫35,850
1A
40V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
30W
3MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot ZXT13P40DE6TA
Diodes Incorporated

TRANS PNP 40V 3A SOT23-6

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1.1W
  • Frequency - Transition: 115MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
パッケージ: SOT-23-6
在庫694,896
3A
40V
240mV @ 300mA, 3A
100nA
300 @ 1A, 2V
1.1W
115MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
2N4036-PBFREE
Central Semiconductor Corp

TRANS PNP 65V 1A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
パッケージ: -
在庫2,442
1 A
65 V
650mV @ 15mA, 150mA
1µA (ICBO)
40 @ 150mA, 10V
1 W
60MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
90025-04TX
Microchip Technology

TRANS NPN TO66

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
BCP52-16TF
Nexperia USA Inc.

BCP52-16T/SOT223/SC-73

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1.3 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
パッケージ: -
在庫11,970
1 A
60 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1.3 W
140MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2SD1898-P-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
  • Power - Max: 500 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
パッケージ: -
Request a Quote
1 A
80 V
400mV @ 20mA, 500mA
1µA (ICBO)
82 @ 500mA, 3V
500 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
BC847AW_R1_00001
Panjit International Inc.

TRANS NPN 45V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
パッケージ: -
Request a Quote
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
250 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BC847CL3-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 150 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: DFN1006-3
パッケージ: -
Request a Quote
100 mA
45 V
600mV @ 5mA, 100mA
1mA
420 @ 2mA, 5V
150 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-101, SOT-883
DFN1006-3
2C5003-MSCL
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSR2N2907AUA-TR
Microchip Technology

TRANS PNP 60V 0.6A UA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
パッケージ: -
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600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C
Surface Mount
4-SMD, No Lead
UA
JANSG2N2222AUBC-TR
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC
パッケージ: -
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800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UBC
2N1613A
Microchip Technology

TRANS NPN 30V 0.5A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
パッケージ: -
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500 mA
30 V
1.5V @ 15mA, 150mA
10nA (ICBO)
40 @ 150mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
RCA1A18
Harris Corporation

NPN POWER TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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