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トランジスタ - FET、MOSFET - アレイ

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FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hotBSD223P L6327
Infineon Technologies

MOSFET 2P-CH 20V 0.39A SOT363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 390mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
パッケージ: 6-VSSOP, SC-88, SOT-363
在庫12,000
Logic Level Gate
20V
390mA
1.2 Ohm @ 390mA, 4.5V
1.2V @ 1.5µA
0.62nC @ 4.5V
56pF @ 15V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hotIRF7101PBF
Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫377
Logic Level Gate
20V
3.5A
100 mOhm @ 1.8A, 10V
3V @ 250µA
15nC @ 10V
320pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hotBSO615N
Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫49,192
Logic Level Gate
60V
2.6A
150 mOhm @ 2.6A, 4.5V
2V @ 20µA
20nC @ 10V
380pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
AON4605_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-DFN (3x2)
パッケージ: 8-SMD, Flat Lead
在庫124
Logic Level Gate
30V
4.3A, 3.4A
50 mOhm @ 4.3A, 10V
2.5V @ 250µA
5nC @ 10V
210pF @ 15V
1.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-DFN (3x2)
AO4852L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫385
Logic Level Gate
60V
3A
90 mOhm @ 3A, 10V
2.6V @ 250µA
9.2nC @ 10V
450pF @ 30V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
TMC1340-SO
Trinamic Motion Control GmbH

MOSFET 2N/2P-CH 30V 8SOIC

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.1A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V
  • Power - Max: 1.38W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫200
Standard
30V
5.5A, 4.1A
33 mOhm @ 5A, 10V
3V @ 250µA
10nC @ 4.5V
960pF @ 25V
1.38W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM120VDA57T3G
Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
パッケージ: SP3
在庫329
Standard
1200V (1.2kV)
17A
684 mOhm @ 8.5A, 10V
5V @ 2.5mA
187nC @ 10V
5155pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
SI7901EDN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.3A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
パッケージ: PowerPAK? 1212-8 Dual
在庫403
Logic Level Gate
20V
4.3A
48 mOhm @ 6.3A, 4.5V
1V @ 800µA
18nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
SI5517DU-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 8.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
パッケージ: PowerPAK? ChipFET? Dual
在庫493
Logic Level Gate
20V
6A
39 mOhm @ 4.4A, 4.5V
1V @ 250µA
16nC @ 8V
520pF @ 10V
8.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
GWM70-01P2
IXYS

MOSFET 6N-CH 100V 70A ISODIL

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL?
  • Supplier Device Package: ISOPLUS-DIL?
パッケージ: ISOPLUS-DIL?
在庫152
Standard
100V
70A
14 mOhm @ 35A, 10V
4V @ 1mA
110nC @ 10V
-
-
-40°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL?
ISOPLUS-DIL?
NTZD3152PT5G
ON Semiconductor

MOSFET 2P-CH 20V 0.43A SOT-563

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 430mA
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
パッケージ: SOT-563, SOT-666
在庫229
Standard
20V
430mA
900 mOhm @ 430mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
175pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hotSTC5DNF30V
STMicroelectronics

MOSFET 2N-CH 30V 4.5A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 2.3A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫21,426
Logic Level Gate
30V
4.5A
35 mOhm @ 2.3A, 4.5V
600mV @ 250µA
11.5nC @ 4.5V
460pF @ 25V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hotIRFHS9351TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 2.3A PQFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VQFN
  • Supplier Device Package: 6-PQFN (2x2)
パッケージ: 6-VQFN
在庫49,876
Logic Level Gate
30V
2.3A
170 mOhm @ 3.1A, 10V
2.4V @ 10µA
3.7nC @ 10V
160pF @ 25V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-VQFN
6-PQFN (2x2)
APTSM120AM25CT3AG
Microsemi Corporation

POWER MODULE - SIC

  • FET Type: 2 N-Channel (Dual), Schottky
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 148A (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V
  • Power - Max: 937W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
パッケージ: SP3
在庫309
Silicon Carbide (SiC)
1200V (1.2kV)
148A (Tc)
25 mOhm @ 80A, 20V
3V @ 4mA
544nC @ 20V
10200pF @ 1000V
937W
-40°C ~ 175°C (TJ)
Chassis Mount
SP3
SP3
APTMC60TL11CT3AG
Microsemi Corporation

MOSFET 4N-CH 1200V 28A SP3

  • FET Type: 4 N-Channel (Three Level Inverter)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
  • Power - Max: 125W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
パッケージ: SP3
在庫102
Standard
1200V (1.2kV)
28A
98 mOhm @ 20A, 20V
2.2V @ 1mA
49nC @ 20V
950pF @ 1000V
125W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM100DSK35T3G
Microsemi Corporation

MOSFET 2N-CH 1000V 22A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
パッケージ: SP3
在庫245
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
ECH8661-TL-H
ON Semiconductor

MOSFET N/P-CH 30V 7A/5.5A ECH8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
パッケージ: 8-SMD, Flat Lead
在庫436
Logic Level Gate
30V
7A, 5.5A
24 mOhm @ 3.5A, 10V
-
11.8nC @ 10V
710pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hotDMC1229UFDB-7
Diodes Incorporated

MOSFET N/P-CH 12V U-DFN2020-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
パッケージ: 6-UDFN Exposed Pad
在庫235
Logic Level Gate
12V
5.6A, 3.8A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
TSM6968DCA RVG
TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫308
Standard
20V
6.5A (Tc)
22 mOhm @ 6A, 4.5V
1V @ 250µA
15nC @ 4.5V
950pF @ 10V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
ALD1116PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫1,461
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
ALD110900APAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
  • Vgs(th) (Max) @ Id: 10mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫415
Standard
10.6V
-
500 Ohm @ 4V
10mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
NX138BKSX
Nexperia USA Inc.

NX138BKS/SC-88/REEL 7" Q1/T1 *

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫223
Standard
60V
210mA (Ta)
3.5 Ohm @ 200mA, 10V
1.5V @ 250µA
0.7nC @ 10V
20pF @ 30V
320mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hotSP8M51TB1
Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫204,640
Standard
100V
3A, 2.5A
-
-
-
-
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TC6320K6-G
Microchip Technology

MOSFET N/P-CH 200V 8VDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (4x4)
パッケージ: 8-VDFN Exposed Pad
在庫129
Standard
200V
-
7 Ohm @ 1A, 10V
2V @ 1mA
-
110pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (4x4)
DMC2041UFDB-7
Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
パッケージ: 6-UDFN Exposed Pad
在庫370
Standard
20V
4.7A, 3.2A
40 mOhm @ 4.2A, 4.5V
1.4V @ 250µA
15nC @ 8V
713pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hotDMP2035UTS-13
Diodes Incorporated

MOSFET 2P-CH 20V 6.04A 8TSSOP

  • FET Type: 2 P-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.04A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
  • Power - Max: 890mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫412
Logic Level Gate
20V
6.04A
35 mOhm @ 4A, 4.5V
1V @ 250µA
15.4nC @ 4.5V
1610pF @ 10V
890mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SSM6P41FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.72A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 720mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
パッケージ: SOT-563, SOT-666
在庫466
Logic Level Gate
20V
720mA
300 mOhm @ 400mA, 4.5V
1V @ 1mA
1.76nC @ 4.5V
110pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
PMDPB56XNEAX
Nexperia USA Inc.

MOSFET ARRAY 2NCH 30V DFN2020D-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
  • Power - Max: 485mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
パッケージ: 6-UDFN Exposed Pad
在庫4,272
Standard
30V
3.1A (Ta)
72 mOhm @ 3.1A, 4.5V
1.25V @ 250µA
5nC @ 4.5V
256pF @ 15V
485mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020D-6
MCH6661-TL-W
ON Semiconductor

MOSFET 2N-CH 30V 1.8A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SC-88FL/ MCPH6
パッケージ: 6-SMD, Flat Leads
在庫3,611
Logic Level Gate, 4V Drive
30V
1.8A
188 mOhm @ 900mA, 10V
2.6V @ 1mA
2nC @ 10V
88pF @ 10V
800mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
SC-88FL/ MCPH6
AON6992
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 19A/31A

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 31A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-DFN-EP (5x6)
パッケージ: 8-PowerWDFN
在庫3,613
Logic Level Gate
30V
19A, 31A
5.2 mOhm @ 20A, 10V
2.2V @ 250µA
13nC @ 10V
820pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-DFN-EP (5x6)