ページ 37 - トランジスタ - FET、MOSFET - RF | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - RF

レコード 3,855
ページ  37/138
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部品番号
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説明
パッケージ
在庫
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA191001EV4XWSA1
Infineon Technologies

IC FET RF LDMOS 100W H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 17dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 44dBm
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
パッケージ: 2-Flatpack, Fin Leads
在庫6,048
1.96GHz
17dB
30V
10µA
-
900mA
44dBm
65V
2-Flatpack, Fin Leads
H-36248-2
BLF6G20S-230PRN:11
NXP

TRANSISTOR PWR LDMOS SOT539B

  • Transistor Type: LDMOS
  • Frequency: 1.8GHz ~ 1.88GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 65W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
パッケージ: SOT539B
在庫3,920
1.8GHz ~ 1.88GHz
17.5dB
28V
-
-
2A
65W
65V
SOT539B
SOT539B
MRFE6S9046NR1
NXP

FET RF 66V 960MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 35.5W
  • Voltage - Rated: 66V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
パッケージ: TO-270AB
在庫5,392
960MHz
19dB
28V
-
-
300mA
35.5W
66V
TO-270AB
TO-270 WB-4
MRF6V2010GNR1
NXP

FET RF 110V 220MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 10W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
パッケージ: TO-270AA
在庫3,664
220MHz
23.9dB
50V
-
-
30mA
10W
110V
TO-270AA
TO-270-2
MRF19125R5
NXP

FET RF 65V 1.93GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 13.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
パッケージ: NI-880
在庫5,584
1.93GHz
13.5dB
26V
-
-
1.3A
24W
65V
NI-880
NI-880
J309G
ON Semiconductor

JFET N-CH 25V 30MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: 16dB
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫3,728
100MHz
16dB
10V
30mA
-
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MRF6S19060MBR1
NXP

FET RF 68V 1.93GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 610mA
  • Power - Output: 12W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272 WB-4
パッケージ: TO-272-4
在庫6,240
1.93GHz
16dB
28V
-
-
610mA
12W
68V
TO-272-4
TO-272 WB-4
BLF6G10-45,112
Ampleon USA Inc.

RF FET LDMOS 65V 22.5DB SOT608A

  • Transistor Type: LDMOS
  • Frequency: 922.5MHz ~ 957.5MHz
  • Gain: 22.5dB
  • Voltage - Test: 28V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 1W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608A
  • Supplier Device Package: CDFM2
パッケージ: SOT-608A
在庫3,424
922.5MHz ~ 957.5MHz
22.5dB
28V
13A
-
350mA
1W
65V
SOT-608A
CDFM2
BF999E6327HTSA1
Infineon Technologies

MOSFET N-CH RF 20V 30MA SOT-23

  • Transistor Type: N-Channel
  • Frequency: 45MHz
  • Gain: 27dB
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 2.1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫3,168
45MHz
27dB
10V
30mA
2.1dB
10mA
-
20V
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BLF7G10LS-250,112
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 19.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
パッケージ: SOT-502B
在庫3,296
920MHz ~ 960MHz
19.5dB
30V
-
-
1.8A
60W
65V
SOT-502B
SOT502B
BLF7G21LS-160P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 32.5A
  • Noise Figure: -
  • Current - Test: 1.08A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: LDMOST
パッケージ: SOT-1121B
在庫2,992
1.93GHz ~ 1.99GHz
18dB
28V
32.5A
-
1.08A
45W
65V
SOT-1121B
LDMOST
PD57060TR-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14.3dB
  • Voltage - Test: 28V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
パッケージ: PowerSO-10 Exposed Bottom Pad
在庫5,760
945MHz
14.3dB
28V
7A
-
100mA
60W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
150-201N09A-00
IXYS

RF MOSFET N-CHANNEL DE150

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 200V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE150
パッケージ: 6-SMD, Flat Lead Exposed Pad
在庫7,360
100MHz
-
-
25µA
-
-
200W
200V
6-SMD, Flat Lead Exposed Pad
DE150
CGHV31500F
Cree/Wolfspeed

FET RF 125V 24A 440217

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 13.5dB
  • Voltage - Test: 50V
  • Current Rating: 24A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 500W
  • Voltage - Rated: 125V
  • Package / Case: 440217
  • Supplier Device Package: 440217
パッケージ: 440217
在庫5,904
2.7GHz ~ 3.1GHz
13.5dB
50V
24A
-
500mA
500W
125V
440217
440217
hot MRF6VP3450HR5
NXP

FET RF 2CH 110V 860MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 22.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 90W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
パッケージ: NI-1230
在庫3,664
860MHz
22.5dB
50V
-
-
1.4A
90W
110V
NI-1230
NI-1230
CGH55030F1
Cree/Wolfspeed

FET RF 84V 5.8GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 5.5GHz ~ 5.8GHz
  • Gain: 10dB
  • Voltage - Test: 28V
  • Current Rating: 3A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
パッケージ: 440166
在庫7,776
5.5GHz ~ 5.8GHz
10dB
28V
3A
-
250mA
30W
84V
440166
440166
hot MRFE6VP6300HR5
NXP

FET RF 2CH 130V 230MHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 26.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 130V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
パッケージ: NI-780-4
在庫5,344
230MHz
26.5dB
50V
-
-
100mA
300W
130V
NI-780-4
NI-780-4
A5G35H055NT4
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
2SK3391JX
Renesas Electronics Corporation

RF MOSFET 13.7V UPAK

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 100MHz ~ 2.5GHz
  • Gain: -
  • Voltage - Test: 13.7 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 1.6W
  • Voltage - Rated: 17 V
  • Package / Case: TO-243AA
  • Supplier Device Package: UPAK
パッケージ: -
Request a Quote
100MHz ~ 2.5GHz
-
13.7 V
10µA
-
150 mA
1.6W
17 V
TO-243AA
UPAK
GTRA184602FC-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.5dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 460W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
パッケージ: -
Request a Quote
1.805GHz ~ 1.88GHz
15.5dB
48 V
-
-
150 mA
460W
125 V
H-37248C-4
H-37248C-4
RF2L16180CB4
STMicroelectronics

RF MOSFET LDMOS 28V B4E

  • Transistor Type: LDMOS
  • Frequency: 1.6GHz
  • Gain: 14dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 180W
  • Voltage - Rated: 65 V
  • Package / Case: B4E
  • Supplier Device Package: B4E
パッケージ: -
在庫90
1.6GHz
14dB
28 V
1µA
-
600 mA
180W
65 V
B4E
B4E
ATF-55143-BLKG
Broadcom Limited

RF MOSFET E-PHEMT 2.7V SOT343

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 17.7dB
  • Voltage - Test: 2.7 V
  • Current Rating: 100mA
  • Noise Figure: 0.6dB
  • Current - Test: 10 mA
  • Power - Output: 14.4dBm
  • Voltage - Rated: 5 V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
パッケージ: -
Request a Quote
2GHz
17.7dB
2.7 V
100mA
0.6dB
10 mA
14.4dBm
5 V
SC-82A, SOT-343
SOT-343
GTVA261802FC-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 16.8dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160 mA
  • Power - Output: 170W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
パッケージ: -
Request a Quote
2.62GHz ~ 2.69GHz
16.8dB
48 V
-
-
160 mA
170W
125 V
H-37248C-4
H-37248C-4
MWT-PH11F
CML Microcircuits

RF MOSFET MESFET 3V CHIP

  • Transistor Type: MESFET
  • Frequency: 12GHz
  • Gain: 9dB
  • Voltage - Test: 3 V
  • Current Rating: 950mA
  • Noise Figure: -
  • Current - Test: 950 mA
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip
パッケージ: -
在庫288
12GHz
9dB
3 V
950mA
-
950 mA
-
-
Die
Chip
PTFA091201E-V4-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 19dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750 mA
  • Power - Output: 120W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36248-2
パッケージ: -
Request a Quote
920MHz ~ 960MHz
19dB
28 V
10µA
-
750 mA
120W
65 V
2-Flatpack, Fin Leads, Flanged
H-36248-2
PTVA042502FC-V1-R0
MACOM Technology Solutions

RF MOSFET H-37248-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
H-37248-4
H-37248-4
BLC9G22LS-120VTZ
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1271-2

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.18GHz
  • Gain: 18.1dB
  • Voltage - Test: 28 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 700 mA
  • Power - Output: 120W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1271-2
  • Supplier Device Package: SOT1271-2
パッケージ: -
Request a Quote
2.11GHz ~ 2.18GHz
18.1dB
28 V
2.8µA
-
700 mA
120W
65 V
SOT-1271-2
SOT1271-2
MRF136Y
MACOM Technology Solutions

RF MOSFET 28V 319B-02

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 400MHz
  • Gain: 14dB
  • Voltage - Test: 28 V
  • Current Rating: 5A
  • Noise Figure: 1dB
  • Current - Test: 25 mA
  • Power - Output: 30W
  • Voltage - Rated: 65 V
  • Package / Case: 319B-02
  • Supplier Device Package: 319B-02, Style 1
パッケージ: -
Request a Quote
400MHz
14dB
28 V
5A
1dB
25 mA
30W
65 V
319B-02
319B-02, Style 1