ページ 1046 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品

IRFR13N20DTRRP

Infineon Technologies

MOSFET N-CH 200V 13A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫2,848

MOSFET (Metal Oxide)

200V

13A (Tc)

10V

5.5V @ 250µA

38nC @ 10V

830pF @ 25V

±30V

-

110W (Tc)

235 mOhm @ 8A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

IPB03N03LA

Infineon Technologies

MOSFET N-CH 25V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 7027pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 55A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫242,508

MOSFET (Metal Oxide)

25V

80A (Tc)

4.5V, 10V

2V @ 100µA

57nC @ 5V

7027pF @ 15V

±20V

-

150W (Tc)

2.7 mOhm @ 55A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFZ48ZSPBF

Infineon Technologies

MOSFET N-CH 55V 61A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,920

MOSFET (Metal Oxide)

55V

61A (Tc)

10V

4V @ 250µA

64nC @ 10V

1720pF @ 25V

±20V

-

91W (Tc)

11 mOhm @ 37A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSS209PW

Infineon Technologies

MOSFET P-CH 20V 580MA SOT-323

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 520mW (Ta)
Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT323-3
Package / Case: SC-70, SOT-323

パッケージ: SC-70, SOT-323

在庫550,980

MOSFET (Metal Oxide)

20V

580mA (Ta)

2.5V, 4.5V

1.2V @ 3.5µA

1.38nC @ 4.5V

89.9pF @ 15V

±12V

-

520mW (Ta)

550 mOhm @ 580mA, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT323-3

SC-70, SOT-323

MCH3382-TL-H

ON Semiconductor

MOSFET P-CH 12V 2A MCPH3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6V
Vgs (Max): ±9V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70FL/MCPH3
Package / Case: 3-SMD, Flat Leads

パッケージ: 3-SMD, Flat Leads

在庫414,252

MOSFET (Metal Oxide)

12V

2A (Ta)

1.8V, 4.5V

-

2.3nC @ 4.5V

170 pF @ 6V

±9V

-

800mW (Ta)

198 mOhm @ 1A, 4.5V

150°C (TJ)

Surface Mount

SC-70FL/MCPH3

3-SMD, Flat Leads

NTGD4169FT1G

ON Semiconductor

MOSFET N-CH 30V 2.6A 6-TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
Vgs (Max): ±12V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V
Operating Temperature: -25°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6

パッケージ: SOT-23-6

在庫360,012

MOSFET (Metal Oxide)

30V

2.6A (Ta)

2.5V, 4.5V

1.5V @ 250µA

5.5nC @ 4.5V

295pF @ 15V

±12V

Schottky Diode (Isolated)

900mW (Ta)

90 mOhm @ 2.6A, 4.5V

-25°C ~ 150°C (TJ)

Surface Mount

6-TSOP

SOT-23-6

FQL50N40

Fairchild/ON Semiconductor

MOSFET N-CH 400V 50A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫4,496

MOSFET (Metal Oxide)

400V

50A (Tc)

10V

5V @ 250µA

210nC @ 10V

7500pF @ 25V

±30V

-

460W (Tc)

75 mOhm @ 25A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264

TO-264-3, TO-264AA

FQP18N50V2

Fairchild/ON Semiconductor

MOSFET N-CH 500V 18A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫174,468

MOSFET (Metal Oxide)

500V

18A (Tc)

10V

5V @ 250µA

55nC @ 10V

3290pF @ 25V

±30V

-

208W (Tc)

265 mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

IRFZ40

Vishay Siliconix

MOSFET N-CH 60V 50A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫5,872

MOSFET (Metal Oxide)

60V

50A (Tc)

10V

4V @ 250µA

67nC @ 10V

1900pF @ 25V

±20V

-

150W (Tc)

28 mOhm @ 31A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

STP15NM60N

STMicroelectronics

MOSFET N-CH 600V 14A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫11,196

MOSFET (Metal Oxide)

600V

14A (Tc)

10V

4V @ 250µA

37nC @ 10V

1250pF @ 50V

±25V

-

125W (Tc)

299 mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPI037N08N3GXKSA1

Infineon Technologies

MOSFET N-CH 80V 100A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫4,480

MOSFET (Metal Oxide)

80V

100A (Tc)

6V, 10V

3.5V @ 155µA

117nC @ 10V

8110pF @ 40V

±20V

-

214W (Tc)

3.75 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IXFH150N15P

IXYS

MOSFET N-CH 150V 150A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫2,592

MOSFET (Metal Oxide)

150V

150A (Tc)

10V

5V @ 4mA

190nC @ 10V

5800pF @ 25V

±20V

-

714W (Tc)

13 mOhm @ 500mA, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AD (IXFH)

TO-247-3

STI6N95K5

STMicroelectronics

NCHANNEL 950V ZENER POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫3,664

-

IRF7820TRPBF

Infineon Technologies

MOSFET N CH 200V 3.7A 8-SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 2.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,816

MOSFET (Metal Oxide)

200V

3.7A (Ta)

10V

5V @ 100µA

44nC @ 10V

1750pF @ 100V

±20V

-

2.5W (Ta)

78 mOhm @ 2.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

ATP304-TL-H

ON Semiconductor

MOSFET P-CH 60V 100A ATPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 50A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ATPAK
Package / Case: ATPAK (2 leads+tab)

パッケージ: ATPAK (2 leads+tab)

在庫3,824

MOSFET (Metal Oxide)

60V

100A (Ta)

4.5V, 10V

-

250nC @ 10V

13000pF @ 20V

±20V

-

90W (Tc)

6.5 mOhm @ 50A, 10V

150°C (TJ)

Surface Mount

ATPAK

ATPAK (2 leads+tab)

SI5432DC-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 6A 1206-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET?
Package / Case: 8-SMD, Flat Lead

パッケージ: 8-SMD, Flat Lead

在庫617,460

MOSFET (Metal Oxide)

20V

6A (Tc)

2.5V, 4.5V

1.5V @ 250µA

33nC @ 10V

1200pF @ 10V

±12V

-

2.5W (Ta), 6.3W (Tc)

20 mOhm @ 8.3A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

1206-8 ChipFET?

8-SMD, Flat Lead

FCP21N60N

Fairchild Semiconductor

N-CHANNEL, MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

600 V

-

Through Hole

TO-220-3

2SK3326-9-AZ

Renesas Electronics Corporation

DISCRETE / POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

APT20M45SVFRG

Microchip Technology

MOSFET N-CH 200V 56A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

200 V

56A (Tc)

-

4V @ 1mA

195 nC @ 10 V

4860 pF @ 25 V

-

45mOhm @ 500mA, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

RHK003N06FRAT146

Rohm Semiconductor

MOSFET N-CH 60V 300MA SMT3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SMT3
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

60 V

300mA (Ta)

4V, 10V

2.5V @ 1mA

6 nC @ 10 V

33 pF @ 10 V

±20V

-

200mW (Ta)

1Ohm @ 300mA, 10V

150°C (TJ)

Surface Mount

SMT3

TO-236-3, SC-59, SOT-23-3

SQM50034E_GE3

Vishay Siliconix

MOSFET N-CH 60V 100A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫1,065

MOSFET (Metal Oxide)

60 V

100A (Tc)

10V

3.5V @ 250µA

90 nC @ 10 V

6600 pF @ 25 V

±20V

-

150W (Tc)

3.9mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

SQD50P04-09L_T4GE3

Vishay Siliconix

MOSFET P-CH 40V 50A TO252AA

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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MOSFET (Metal Oxide)

40 V

50A (Tc)

4.5V, 10V

2.5V @ 250µA

155 nC @ 10 V

6675 pF @ 20 V

±20V

-

136W (Tc)

9.4mOhm @ 17A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

FCPF11N65

Fairchild Semiconductor

TRANS MOSFET N-CH 600V 11A 3PIN(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

パッケージ: -

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MOSFET (Metal Oxide)

650 V

11A (Tc)

-

5V @ 250µA

52 nC @ 10 V

1490 pF @ 25 V

-

36W (Tc)

380mOhm @ 5.5A, 10V

-

Through Hole

TO-220F

TO-220-3 Full Pack

SCT10N120H

STMicroelectronics

SICFET N-CH 1200V 12A H2PAK-2

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: H2Pak-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

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SiCFET (Silicon Carbide)

1200 V

12A (Tc)

20V

3.5V @ 250µA

22 nC @ 20 V

290 pF @ 400 V

+25V, -10V

-

150W (Tc)

690mOhm @ 6A, 20V

-55°C ~ 200°C (TJ)

Surface Mount

H2Pak-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

DMTH8008SPS-13

Diodes Incorporated

MOSFET N-CH 80V 92A PWRDI5060-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN

パッケージ: -

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MOSFET (Metal Oxide)

80 V

92A (Tc)

6V, 10V

4V @ 1mA

34 nC @ 10 V

1950 pF @ 40 V

±20V

-

1.6W (Ta), 100W (Tc)

7.8mOhm @ 14A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerDI5060-8

8-PowerTDFN

MCH6405-TL-E

onsemi

NCH 2.5V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

NTR3A30PZT1G-ML

MOSLEADER

P-Channel -20V 5.1A SOT-23-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IRF7832TR

Infineon Technologies

MOSFET N-CH 30V 20A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.32V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: -

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MOSFET (Metal Oxide)

30 V

20A (Ta)

-

2.32V @ 250µA

51 nC @ 4.5 V

4310 pF @ 15 V

-

4mOhm @ 20A, 10V

-

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR13N20DTRRP	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫2,848	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB03N03LA	Infineon Technologies	MOSFET N-CH 25V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7027pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫242,508	MOSFET (Metal Oxide)	25V	80A (Tc)	4.5V, 10V	2V @ 100µA	57nC @ 5V	7027pF @ 15V	±20V	-	150W (Tc)	2.7 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ48ZSPBF	Infineon Technologies	MOSFET N-CH 55V 61A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,920	MOSFET (Metal Oxide)	55V	61A (Tc)	10V	4V @ 250µA	64nC @ 10V	1720pF @ 25V	±20V	-	91W (Tc)	11 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS209PW	Infineon Technologies	MOSFET P-CH 20V 580MA SOT-323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.5µA Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 520mW (Ta) Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	パッケージ: SC-70, SOT-323	在庫550,980	MOSFET (Metal Oxide)	20V	580mA (Ta)	2.5V, 4.5V	1.2V @ 3.5µA	1.38nC @ 4.5V	89.9pF @ 15V	±12V	-	520mW (Ta)	550 mOhm @ 580mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323-3	SC-70, SOT-323
MCH3382-TL-H	ON Semiconductor	MOSFET P-CH 12V 2A MCPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6V Vgs (Max): ±9V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	パッケージ: 3-SMD, Flat Leads	在庫414,252	MOSFET (Metal Oxide)	12V	2A (Ta)	1.8V, 4.5V	-	2.3nC @ 4.5V	170 pF @ 6V	±9V	-	800mW (Ta)	198 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
NTGD4169FT1G	ON Semiconductor	MOSFET N-CH 30V 2.6A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V Operating Temperature: -25°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	パッケージ: SOT-23-6	在庫360,012	MOSFET (Metal Oxide)	30V	2.6A (Ta)	2.5V, 4.5V	1.5V @ 250µA	5.5nC @ 4.5V	295pF @ 15V	±12V	Schottky Diode (Isolated)	900mW (Ta)	90 mOhm @ 2.6A, 4.5V	-25°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
FQL50N40	Fairchild/ON Semiconductor	MOSFET N-CH 400V 50A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫4,496	MOSFET (Metal Oxide)	400V	50A (Tc)	10V	5V @ 250µA	210nC @ 10V	7500pF @ 25V	±30V	-	460W (Tc)	75 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
FQP18N50V2	Fairchild/ON Semiconductor	MOSFET N-CH 500V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫174,468	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	5V @ 250µA	55nC @ 10V	3290pF @ 25V	±30V	-	208W (Tc)	265 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFZ40	Vishay Siliconix	MOSFET N-CH 60V 50A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫5,872	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	67nC @ 10V	1900pF @ 25V	±20V	-	150W (Tc)	28 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP15NM60N	STMicroelectronics	MOSFET N-CH 600V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫11,196	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4V @ 250µA	37nC @ 10V	1250pF @ 50V	±25V	-	125W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI037N08N3GXKSA1	Infineon Technologies	MOSFET N-CH 80V 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫4,480	MOSFET (Metal Oxide)	80V	100A (Tc)	6V, 10V	3.5V @ 155µA	117nC @ 10V	8110pF @ 40V	±20V	-	214W (Tc)	3.75 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFH150N15P	IXYS	MOSFET N-CH 150V 150A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	パッケージ: TO-247-3	在庫2,592	MOSFET (Metal Oxide)	150V	150A (Tc)	10V	5V @ 4mA	190nC @ 10V	5800pF @ 25V	±20V	-	714W (Tc)	13 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
STI6N95K5	STMicroelectronics	NCHANNEL 950V ZENER POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫3,664	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7820TRPBF	Infineon Technologies	MOSFET N CH 200V 3.7A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 78 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,816	MOSFET (Metal Oxide)	200V	3.7A (Ta)	10V	5V @ 100µA	44nC @ 10V	1750pF @ 100V	±20V	-	2.5W (Ta)	78 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ATP304-TL-H	ON Semiconductor	MOSFET P-CH 60V 100A ATPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	パッケージ: ATPAK (2 leads+tab)	在庫3,824	MOSFET (Metal Oxide)	60V	100A (Ta)	4.5V, 10V	-	250nC @ 10V	13000pF @ 20V	±20V	-	90W (Tc)	6.5 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
SI5432DC-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 6A 1206-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	パッケージ: 8-SMD, Flat Lead	在庫617,460	MOSFET (Metal Oxide)	20V	6A (Tc)	2.5V, 4.5V	1.5V @ 250µA	33nC @ 10V	1200pF @ 10V	±12V	-	2.5W (Ta), 6.3W (Tc)	20 mOhm @ 8.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
FCP21N60N	Fairchild Semiconductor	N-CHANNEL, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	600 V	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3	TO-220-3
2SK3326-9-AZ	Renesas Electronics Corporation	DISCRETE / POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT20M45SVFRG	Microchip Technology	MOSFET N-CH 200V 56A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	200 V	56A (Tc)	-	4V @ 1mA	195 nC @ 10 V	4860 pF @ 25 V	-	-	-	45mOhm @ 500mA, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
RHK003N06FRAT146	Rohm Semiconductor	MOSFET N-CH 60V 300MA SMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4V, 10V	2.5V @ 1mA	6 nC @ 10 V	33 pF @ 10 V	±20V	-	200mW (Ta)	1Ohm @ 300mA, 10V	150°C (TJ)	Surface Mount	SMT3	TO-236-3, SC-59, SOT-23-3
SQM50034E_GE3	Vishay Siliconix	MOSFET N-CH 60V 100A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	在庫1,065	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	3.5V @ 250µA	90 nC @ 10 V	6600 pF @ 25 V	±20V	-	150W (Tc)	3.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQD50P04-09L_T4GE3	Vishay Siliconix	MOSFET P-CH 40V 50A TO252AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	155 nC @ 10 V	6675 pF @ 20 V	±20V	-	136W (Tc)	9.4mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
FCPF11N65	Fairchild Semiconductor	TRANS MOSFET N-CH 600V 11A 3PIN( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11A (Tc)	-	5V @ 250µA	52 nC @ 10 V	1490 pF @ 25 V	-	-	36W (Tc)	380mOhm @ 5.5A, 10V	-	Through Hole	TO-220F	TO-220-3 Full Pack
SCT10N120H	STMicroelectronics	SICFET N-CH 1200V 12A H2PAK-2 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	12A (Tc)	20V	3.5V @ 250µA	22 nC @ 20 V	290 pF @ 400 V	+25V, -10V	-	150W (Tc)	690mOhm @ 6A, 20V	-55°C ~ 200°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMTH8008SPS-13	Diodes Incorporated	MOSFET N-CH 80V 92A PWRDI5060-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	80 V	92A (Tc)	6V, 10V	4V @ 1mA	34 nC @ 10 V	1950 pF @ 40 V	±20V	-	1.6W (Ta), 100W (Tc)	7.8mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
MCH6405-TL-E	onsemi	NCH 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTR3A30PZT1G-ML	MOSLEADER	P-Channel -20V 5.1A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7832TR	Infineon Technologies	MOSFET N-CH 30V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.32V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Ta)	-	2.32V @ 250µA	51 nC @ 4.5 V	4310 pF @ 15 V	-	-	-	4mOhm @ 20A, 10V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)