ページ 1059 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - シングル

レコード 42,029
ページ  1,059/1,502
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFH7188TRPBF
Infineon Technologies

MOSFET N-CH 100V 18A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2116pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫6,240
MOSFET (Metal Oxide)
100V
18A (Ta), 105A (Tc)
10V
3.9V @ 150µA
50nC @ 10V
2116pF @ 50V
±20V
-
3.8W (Ta), 132W (Tc)
6 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerTDFN
SPI100N03S2L03
Infineon Technologies

MOSFET N-CH 30V 100A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫6,704
MOSFET (Metal Oxide)
30V
100A (Tc)
10V
2V @ 250µA
220nC @ 10V
8180pF @ 25V
±20V
-
300W (Tc)
3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2Pak, TO-262AA
APT5F100K
Microsemi Corporation

MOSFET N-CH 1000V 5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1409pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 225W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫4,480
MOSFET (Metal Oxide)
1000V
5A (Tc)
10V
5V @ 500µA
43nC @ 10V
1409pF @ 25V
±30V
-
225W (Tc)
2.8 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
hot MTP50P03HDL
ON Semiconductor

MOSFET P-CH 30V 50A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫6,320
MOSFET (Metal Oxide)
30V
50A (Tc)
5V
2V @ 250µA
100nC @ 5V
4900pF @ 25V
±15V
-
125W (Tc)
25 mOhm @ 25A, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPP80N06S208AKSA2
Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 215W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫4,704
MOSFET (Metal Oxide)
55V
80A (Tc)
10V
4V @ 150µA
96nC @ 10V
2860pF @ 25V
±20V
-
215W (Tc)
8 mOhm @ 58A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPAW60R600CEXKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 444pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫4,000
MOSFET (Metal Oxide)
600V
10.3A (Tc)
10V
3.5V @ 200µA
20.5nC @ 10V
444pF @ 100V
±20V
Super Junction
28W (Tc)
600 mOhm @ 2.4A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
DMNH6042SPS-13
Diodes Incorporated

MOSFET NCH 60V 24A POWERDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫4,800
MOSFET (Metal Oxide)
60V
24A (Tc)
4.5V, 10V
3V @ 250µA
8.8nC @ 10V
584pF @ 25V
±20V
-
1.5W (Ta)
50 mOhm @ 5.1A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
AOI2N60A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251A
  • Package / Case: TO-251-3 Stub Leads, IPak
パッケージ: TO-251-3 Stub Leads, IPak
在庫2,528
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
4.5V @ 250µA
11nC @ 10V
295pF @ 25V
±30V
-
57W (Tc)
4.7 Ohm @ 1A, 10V
-50°C ~ 150°C (TJ)
Through Hole
TO-251A
TO-251-3 Stub Leads, IPak
VS-FC420SA10
Vishay Semiconductor Diodes Division

POWER MODULE 100V 435A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
パッケージ: SOT-227-4, miniBLOC
在庫4,736
MOSFET (Metal Oxide)
100V
-
10V
-
375nC @ 10V
-
±20V
-
-
-
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
AOTF12N60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫6,640
MOSFET (Metal Oxide)
600V
12A (Tc)
10V
4.5V @ 250µA
50nC @ 10V
2100pF @ 25V
±30V
-
50W (Tc)
550 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot 2N7002K-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 300MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫2,359,704
MOSFET (Metal Oxide)
60V
300mA (Ta)
4.5V, 10V
2.5V @ 250µA
0.6nC @ 4.5V
30pF @ 25V
±20V
-
350mW (Ta)
2 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236
TO-236-3, SC-59, SOT-23-3
hot FQA28N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 33A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 16.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
パッケージ: TO-3P-3, SC-65-3
在庫6,144
MOSFET (Metal Oxide)
150V
33A (Tc)
10V
4V @ 250µA
52nC @ 10V
1600pF @ 25V
±25V
-
227W (Tc)
90 mOhm @ 16.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot IRF6665TRPBF
Infineon Technologies

MOSFET N-CH 100V 4.2A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SH
  • Package / Case: DirectFET? Isometric SH
パッケージ: DirectFET? Isometric SH
在庫88,128
MOSFET (Metal Oxide)
100V
4.2A (Ta), 19A (Tc)
10V
5V @ 250µA
13nC @ 10V
530pF @ 25V
±20V
-
2.2W (Ta), 42W (Tc)
62 mOhm @ 5A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? SH
DirectFET? Isometric SH
NTMFS4934NT3G
ON Semiconductor

MOSFET N-CH 30V 147A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
パッケージ: 8-PowerTDFN, 5 Leads
在庫43,926
MOSFET (Metal Oxide)
30V
17.1A (Ta), 147A (Tc)
4.5V, 10V
2.2V @ 250µA
34nC @ 4.5V
5505pF @ 15V
±20V
-
930mW (Ta), 69.44W (Tc)
2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
EPC2038ENGR
EPC

TRANS GAN 100V 0.5A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.044nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 8.4pF @ 50V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 50mA, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
パッケージ: Die
在庫256,332
GaNFET (Gallium Nitride)
100V
500mA (Ta)
5V
2.5V @ 20µA
0.044nC @ 5V
8.4pF @ 50V
+6V, -4V
-
-
3.3 Ohm @ 50mA, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
GA05JT12-263
GeneSiC Semiconductor

TRANS SJT 1200V 15A

  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
在庫21,036
SiC (Silicon Carbide Junction Transistor)
1200V
15A (Tc)
-
-
-
-
-
-
106W (Tc)
-
175°C (TJ)
-
-
-
DN3145N8-G
Microchip Technology

MOSFET N-CH 450V 0.1A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 Ohm @ 100mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
パッケージ: TO-243AA
在庫33,348
MOSFET (Metal Oxide)
450V
100mA (Tj)
0V
-
-
120pF @ 25V
±20V
Depletion Mode
1.3W (Ta)
60 Ohm @ 100mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
hot ZXMN2B01FTA
Diodes Incorporated

MOSFET N-CH 20V 2.1A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫1,788,732
MOSFET (Metal Oxide)
20V
2.1A (Ta)
1.8V, 4.5V
1V @ 250µA
4.8nC @ 4.5V
370pF @ 10V
±8V
-
625mW (Ta)
100 mOhm @ 2.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot SSM3J328R,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
パッケージ: SOT-23-3 Flat Leads
在庫40,200
MOSFET (Metal Oxide)
20V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8nC @ 4.5V
840pF @ 10V
±8V
-
1W (Ta)
29.8 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
STWA65N60DM6
STMicroelectronics

MOSFET N-CH 600V 38A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
パッケージ: -
在庫105
MOSFET (Metal Oxide)
600 V
38A (Tc)
-
-
-
-
±25V
-
-
-
-
Through Hole
TO-247 Long Leads
TO-247-3
IXTA150N15X4
IXYS

MOSFET N-CH 150V 150A TO263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
在庫600
MOSFET (Metal Oxide)
150 V
150A (Tc)
10V
4.5V @ 250µA
105 nC @ 10 V
5500 pF @ 25 V
±20V
-
480W (Tc)
6.9mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHA21N80AEF-GE3
Vishay Siliconix

EF SERIES POWER MOSFET WITH FAST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
在庫3,018
MOSFET (Metal Oxide)
800 V
7A (Tc)
10V
4V @ 250µA
71 nC @ 10 V
1511 pF @ 100 V
±30V
-
33W (Tc)
250mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
PJQ5442-AU_R2_000A1
Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060-8
  • Package / Case: 8-PowerVDFN
パッケージ: -
在庫6,930
MOSFET (Metal Oxide)
40 V
14A (Ta), 90A (Tc)
4.5V, 10V
2.5V @ 250µA
25 nC @ 4.5 V
1258 pF @ 25 V
±20V
-
2.4W (Ta), 99.3W (Tc)
5.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN5060-8
8-PowerVDFN
APT20M18B2VRG
Microchip Technology

MOSFET N-CH 200V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
4V @ 2.5mA
330 nC @ 10 V
9880 pF @ 25 V
-
-
-
18mOhm @ 50A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
FDU6680A
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
14A (Ta), 56A (Tc)
4.5V, 10V
3V @ 250µA
20 nC @ 5 V
1425 pF @ 15 V
±20V
-
1.3W (Ta), 60W (Tc)
9.5mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
FDMS86381-F085
onsemi

MOSFET N-CH 80V 30A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tj)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerVDFN
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
80 V
30A (Tc)
10V
4V @ 250µA
21 nC @ 10 V
866 pF @ 40 V
±20V
-
50W (Tj)
22mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
Power56
8-PowerVDFN
TSM150NB04LCR-RLG
Taiwan Semiconductor Corporation

MOSFET N-CH 40V 10A/41A 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 966 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5.2x5.75)
  • Package / Case: 8-PowerLDFN
パッケージ: -
在庫2,970
MOSFET (Metal Oxide)
40 V
10A (Ta), 41A (Tc)
4.5V, 10V
2.5V @ 250µA
18 nC @ 10 V
966 pF @ 20 V
±20V
-
3.1W (Ta), 56W (Tc)
15mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PDFN (5.2x5.75)
8-PowerLDFN
IPTG018N08NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V PG-HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 253A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 159µA
  • Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
80 V
32A (Ta), 253A (Tc)
6V, 10V
3.8V @ 159µA
127 nC @ 10 V
9200 pF @ 40 V
±20V
-
3.8W (Ta), 231W (Tc)
1.8mOhm @ 150A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing