画像 |
部品番号 |
メーカ |
説明 |
パッケージ |
在庫 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 100V 18A
|
パッケージ: 8-PowerTDFN |
在庫6,240 |
|
MOSFET (Metal Oxide) | 100V | 18A (Ta), 105A (Tc) | 10V | 3.9V @ 150µA | 50nC @ 10V | 2116pF @ 50V | ±20V | - | 3.8W (Ta), 132W (Tc) | 6 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 100A TO-262
|
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA |
在庫6,704 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | ±20V | - | 300W (Tc) | 3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Microsemi Corporation |
MOSFET N-CH 1000V 5A TO-220
|
パッケージ: TO-220-3 |
在庫4,480 |
|
MOSFET (Metal Oxide) | 1000V | 5A (Tc) | 10V | 5V @ 500µA | 43nC @ 10V | 1409pF @ 25V | ±30V | - | 225W (Tc) | 2.8 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 30V 50A TO-220AB
|
パッケージ: TO-220-3 |
在庫6,320 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 5V | 2V @ 250µA | 100nC @ 5V | 4900pF @ 25V | ±15V | - | 125W (Tc) | 25 mOhm @ 25A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
|
パッケージ: TO-220-3 |
在庫4,704 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | ±20V | - | 215W (Tc) | 8 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3
|
パッケージ: TO-220-3 Full Pack |
在庫4,000 |
|
MOSFET (Metal Oxide) | 600V | 10.3A (Tc) | 10V | 3.5V @ 200µA | 20.5nC @ 10V | 444pF @ 100V | ±20V | Super Junction | 28W (Tc) | 600 mOhm @ 2.4A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET NCH 60V 24A POWERDI
|
パッケージ: 8-PowerTDFN |
在庫4,800 |
|
MOSFET (Metal Oxide) | 60V | 24A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.8nC @ 10V | 584pF @ 25V | ±20V | - | 1.5W (Ta) | 50 mOhm @ 5.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 2A
|
パッケージ: TO-251-3 Stub Leads, IPak |
在庫2,528 |
|
MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.5V @ 250µA | 11nC @ 10V | 295pF @ 25V | ±30V | - | 57W (Tc) | 4.7 Ohm @ 1A, 10V | -50°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Vishay Semiconductor Diodes Division |
POWER MODULE 100V 435A SOT-227
|
パッケージ: SOT-227-4, miniBLOC |
在庫4,736 |
|
MOSFET (Metal Oxide) | 100V | - | 10V | - | 375nC @ 10V | - | ±20V | - | - | - | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 12A TO220F
|
パッケージ: TO-220-3 Full Pack |
在庫6,640 |
|
MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 4.5V @ 250µA | 50nC @ 10V | 2100pF @ 25V | ±30V | - | 50W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 60V 300MA SOT-23
|
パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫2,359,704 |
|
MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 30pF @ 25V | ±20V | - | 350mW (Ta) | 2 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 33A TO-3P
|
パッケージ: TO-3P-3, SC-65-3 |
在庫6,144 |
|
MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 4V @ 250µA | 52nC @ 10V | 1600pF @ 25V | ±25V | - | 227W (Tc) | 90 mOhm @ 16.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 100V 4.2A DIRECTFET
|
パッケージ: DirectFET? Isometric SH |
在庫88,128 |
|
MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | ±20V | - | 2.2W (Ta), 42W (Tc) | 62 mOhm @ 5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SH | DirectFET? Isometric SH |
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ON Semiconductor |
MOSFET N-CH 30V 147A SO8FL
|
パッケージ: 8-PowerTDFN, 5 Leads |
在庫43,926 |
|
MOSFET (Metal Oxide) | 30V | 17.1A (Ta), 147A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 34nC @ 4.5V | 5505pF @ 15V | ±20V | - | 930mW (Ta), 69.44W (Tc) | 2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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EPC |
TRANS GAN 100V 0.5A BUMPED DIE
|
パッケージ: Die |
在庫256,332 |
|
GaNFET (Gallium Nitride) | 100V | 500mA (Ta) | 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | +6V, -4V | - | - | 3.3 Ohm @ 50mA, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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GeneSiC Semiconductor |
TRANS SJT 1200V 15A
|
パッケージ: - |
在庫21,036 |
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SiC (Silicon Carbide Junction Transistor) | 1200V | 15A (Tc) | - | - | - | - | - | - | 106W (Tc) | - | 175°C (TJ) | - | - | - |
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Microchip Technology |
MOSFET N-CH 450V 0.1A SOT89-3
|
パッケージ: TO-243AA |
在庫33,348 |
|
MOSFET (Metal Oxide) | 450V | 100mA (Tj) | 0V | - | - | 120pF @ 25V | ±20V | Depletion Mode | 1.3W (Ta) | 60 Ohm @ 100mA, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
||
Diodes Incorporated |
MOSFET N-CH 20V 2.1A SOT23-3
|
パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫1,788,732 |
|
MOSFET (Metal Oxide) | 20V | 2.1A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 370pF @ 10V | ±8V | - | 625mW (Ta) | 100 mOhm @ 2.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F
|
パッケージ: SOT-23-3 Flat Leads |
在庫40,200 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | ±8V | - | 1W (Ta) | 29.8 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
||
STMicroelectronics |
MOSFET N-CH 600V 38A TO247
|
パッケージ: - |
在庫105 |
|
MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | - | - | - | ±25V | - | - | - | - | Through Hole | TO-247 Long Leads | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 150A TO263AA
|
パッケージ: - |
在庫600 |
|
MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 4.5V @ 250µA | 105 nC @ 10 V | 5500 pF @ 25 V | ±20V | - | 480W (Tc) | 6.9mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST
|
パッケージ: - |
在庫3,018 |
|
MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 4V @ 250µA | 71 nC @ 10 V | 1511 pF @ 100 V | ±30V | - | 33W (Tc) | 250mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
|
パッケージ: - |
在庫6,930 |
|
MOSFET (Metal Oxide) | 40 V | 14A (Ta), 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 4.5 V | 1258 pF @ 25 V | ±20V | - | 2.4W (Ta), 99.3W (Tc) | 5.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
Microchip Technology |
MOSFET N-CH 200V 100A T-MAX
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 4V @ 2.5mA | 330 nC @ 10 V | 9880 pF @ 25 V | - | - | - | 18mOhm @ 50A, 10V | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 3V @ 250µA | 20 nC @ 5 V | 1425 pF @ 15 V | ±20V | - | 1.3W (Ta), 60W (Tc) | 9.5mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |
||
onsemi |
MOSFET N-CH 80V 30A POWER56
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 10V | 4V @ 250µA | 21 nC @ 10 V | 866 pF @ 40 V | ±20V | - | 50W (Tj) | 22mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerVDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 10A/41A 8PDFN
|
パッケージ: - |
在庫2,970 |
|
MOSFET (Metal Oxide) | 40 V | 10A (Ta), 41A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18 nC @ 10 V | 966 pF @ 20 V | ±20V | - | 3.1W (Ta), 56W (Tc) | 15mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5.2x5.75) | 8-PowerLDFN |
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Infineon Technologies |
TRENCH 40<-<100V PG-HSOG-8
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 32A (Ta), 253A (Tc) | 6V, 10V | 3.8V @ 159µA | 127 nC @ 10 V | 9200 pF @ 40 V | ±20V | - | 3.8W (Ta), 231W (Tc) | 1.8mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |