ページ 1078 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品

SI7425DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 8.3A PPAK 1212-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.6A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

パッケージ: PowerPAK? 1212-8

在庫3,728

MOSFET (Metal Oxide)

12V

8.3A (Ta)

1.8V, 4.5V

1V @ 300µA

39nC @ 4.5V

-

±8V

-

1.5W (Ta)

16 mOhm @ 12.6A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

HUF76407P3

Fairchild/ON Semiconductor

MOSFET N-CH 60V 13A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫53,640

MOSFET (Metal Oxide)

60V

13A (Tc)

4.5V, 10V

3V @ 250µA

11.3nC @ 10V

350pF @ 25V

±16V

-

38W (Tc)

92 mOhm @ 13A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

STB30NM50N

STMicroelectronics

MOSFET N-CH 500V 27A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫3,584

MOSFET (Metal Oxide)

500V

27A (Tc)

10V

4V @ 250µA

94nC @ 10V

2740pF @ 50V

±25V

-

190W (Tc)

115 mOhm @ 13.5A, 10V

150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPP11N65C3XKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫6,032

MOSFET (Metal Oxide)

650V

11A (Tc)

10V

3.9V @ 500µA

60nC @ 10V

1200pF @ 25V

±20V

-

125W (Tc)

380 mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IXFA10N80P

IXYS

MOSFET N-CH 800V 10A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXFA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫6,080

MOSFET (Metal Oxide)

800V

10A (Tc)

10V

5.5V @ 2.5mA

40nC @ 10V

2050pF @ 25V

±30V

-

300W (Tc)

1.1 Ohm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (IXFA)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NVMFS5C442NWFAFT3G

ON Semiconductor

MOSFET N-CH 40V SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

在庫5,488

MOSFET (Metal Oxide)

40V

29A (Ta), 140A (Tc)

10V

4V @ 250µA

32nC @ 10V

2100pF @ 25V

±20V

-

3.7W (Ta), 83W (Tc)

2.3 mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

BUK6213-30A,118

Nexperia USA Inc.

MOSFET N-CH 30V 55A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫6,848

MOSFET (Metal Oxide)

30V

55A (Tc)

10V

3V @ 1mA

44nC @ 10V

1986pF @ 25V

±16V

-

102W (Tc)

13 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

TSM4N80CI C0G

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 38.7W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220
Package / Case: TO-220-3 Full Pack, Isolated Tab

パッケージ: TO-220-3 Full Pack, Isolated Tab

在庫3,536

MOSFET (Metal Oxide)

800V

4A (Tc)

10V

4V @ 250µA

20nC @ 10V

955pF @ 25V

±30V

-

38.7W (Tc)

3 Ohm @ 1.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ITO-220

TO-220-3 Full Pack, Isolated Tab

FQI50N06TU

Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫22,932

MOSFET (Metal Oxide)

60V

50A (Tc)

10V

4V @ 250µA

41nC @ 10V

1540pF @ 25V

±25V

-

3.75W (Ta), 120W (Tc)

22 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

I2PAK

TO-262-3 Long Leads, I2Pak, TO-262AA

DMP3036SFG-7

Diodes Incorporated

MOSFET P-CH 30V 8.7A PWRDI3333-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerWDFN

パッケージ: 8-PowerWDFN

在庫6,000

MOSFET (Metal Oxide)

30V

8.7A (Ta)

5V, 10V

2.5V @ 250µA

16.5nC @ 10V

1931pF @ 15V

±25V

-

950mW (Ta)

20 mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI3333-8

8-PowerWDFN

APT53N60BC6

Microsemi Corporation

MOSFET N-CH 600V 53A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫23,100

MOSFET (Metal Oxide)

600V

53A (Tc)

10V

3.5V @ 1.72mA

154nC @ 10V

4020pF @ 25V

±20V

-

417W (Tc)

70 mOhm @ 25.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 [B]

TO-247-3

DMN4036LK3-13

Diodes Incorporated

MOSFET N-CH 40V 8.5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.12W (Ta)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫264,408

MOSFET (Metal Oxide)

40V

8.5A (Ta)

4.5V, 10V

3V @ 250µA

9.2nC @ 10V

453pF @ 20V

±20V

-

2.12W (Ta)

36 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFH8202TRPBF

Infineon Technologies

MOSFET N-CH 25V 100A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

在庫28,956

MOSFET (Metal Oxide)

25V

47A (Ta), 100A (Tc)

4.5V, 10V

2.35V @ 150µA

110nC @ 10V

7174pF @ 13V

±20V

-

3.6W (Ta), 160W (Tc)

1.05 mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

BSZ0901NS

Infineon Technologies

MOSFET N-CH 30V S308

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

在庫6,804

MOSFET (Metal Oxide)

30V

22A (Ta), 40A (Tc)

4.5V, 10V

2.2V @ 250µA

45nC @ 10V

2850pF @ 15V

±20V

-

2.1W (Ta), 50W (Tc)

2 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

DMN3404L-7

Diodes Incorporated

MOSFET N-CH 30V 5.8A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 720mW (Ta)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,314,076

MOSFET (Metal Oxide)

30V

5.8A (Ta)

3V, 10V

2V @ 250µA

9.2nC @ 10V

386pF @ 15V

±20V

-

720mW (Ta)

28 mOhm @ 5.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

BSC016N04LSGATMA1

Infineon Technologies

MOSFET N-CH 40V 31A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

40 V

31A (Ta), 100A (Tc)

4.5V, 10V

2V @ 85µA

150 nC @ 10 V

12000 pF @ 20 V

±20V

-

2.5W (Ta), 139W (Tc)

1.6mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

2N7002KWHE3-TP

Micro Commercial Co

N-CHANNEL MOSFET SOT-323

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 340mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200mW
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323

パッケージ: -

在庫8,400

MOSFET (Metal Oxide)

60 V

340mA

4.5V, 10V

2V @ 1mA

-

40 pF @ 10 V

±20V

-

200mW

2.5Ohm @ 300mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-323

SC-70, SOT-323

FQD3N60CTM-WS

onsemi

MOSFET N-CH 600V 2.4A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

600 V

2.4A (Tc)

10V

4V @ 250µA

14 nC @ 10 V

565 pF @ 25 V

±30V

-

50W (Tc)

3.4Ohm @ 1.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

BUK9Y6R5-40HX

Nexperia USA Inc.

MOSFET N-CH 40V 70A LFPAK56

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 64W (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

パッケージ: -

在庫5,973

MOSFET (Metal Oxide)

40 V

70A (Ta)

4.5V, 10V

2.15V @ 1mA

29 nC @ 10 V

2036 pF @ 25 V

±20V

-

64W (Ta)

6.5mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK56, Power-SO8

SC-100, SOT-669

GSF3416

Good-Ark Semiconductor

MOSFET, N-CHANNEL, 20V, 6.5A, SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: -

在庫17,925

MOSFET (Metal Oxide)

20 V

6.5A (Ta)

1.8V, 4.5V

1V @ 250µA

8 nC @ 4.5 V

660 pF @ 10 V

±12V

-

1.4W (Ta)

27mOhm @ 6.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

NTMFS6H818NLT1G

onsemi

MOSFET N-CH 80V 22A/135A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 190µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: -

在庫8,550

MOSFET (Metal Oxide)

80 V

22A (Ta), 135A (Tc)

4.5V, 10V

2V @ 190µA

64 nC @ 10 V

3844 pF @ 40 V

±20V

-

3.8W (Ta), 140W (Tc)

3.2mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

RJK03D3DPA-00-J5A

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

5HP01M-TL-E-FS

Fairchild Semiconductor

MOSFET P-CH 50V 0.07A MCP3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

NDS9400

Fairchild Semiconductor

P-CHANNEL POWER MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 2W
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

-

2.5A

-

2W

-

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

SM2311PSAC-TRG-ML

MOSLEADER

P -30V -3.8A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

CES2307A-ML

MOSLEADER

Single P -30V -3.2A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

ISC037N13NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

IPC95R1K2P7X7SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI7425DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 8.3A PPAK 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	パッケージ: PowerPAK? 1212-8	在庫3,728	MOSFET (Metal Oxide)	12V	8.3A (Ta)	1.8V, 4.5V	1V @ 300µA	39nC @ 4.5V	-	±8V	-	1.5W (Ta)	16 mOhm @ 12.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
HUF76407P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 13A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫53,640	MOSFET (Metal Oxide)	60V	13A (Tc)	4.5V, 10V	3V @ 250µA	11.3nC @ 10V	350pF @ 25V	±16V	-	38W (Tc)	92 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB30NM50N	STMicroelectronics	MOSFET N-CH 500V 27A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫3,584	MOSFET (Metal Oxide)	500V	27A (Tc)	10V	4V @ 250µA	94nC @ 10V	2740pF @ 50V	±25V	-	190W (Tc)	115 mOhm @ 13.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPP11N65C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫6,032	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	3.9V @ 500µA	60nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IXFA10N80P	IXYS	MOSFET N-CH 800V 10A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫6,080	MOSFET (Metal Oxide)	800V	10A (Tc)	10V	5.5V @ 2.5mA	40nC @ 10V	2050pF @ 25V	±30V	-	300W (Tc)	1.1 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C442NWFAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	パッケージ: 8-PowerTDFN, 5 Leads	在庫5,488	MOSFET (Metal Oxide)	40V	29A (Ta), 140A (Tc)	10V	4V @ 250µA	32nC @ 10V	2100pF @ 25V	±20V	-	3.7W (Ta), 83W (Tc)	2.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
BUK6213-30A,118	Nexperia USA Inc.	MOSFET N-CH 30V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,848	MOSFET (Metal Oxide)	30V	55A (Tc)	10V	3V @ 1mA	44nC @ 10V	1986pF @ 25V	±16V	-	102W (Tc)	13 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
TSM4N80CI C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38.7W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	パッケージ: TO-220-3 Full Pack, Isolated Tab	在庫3,536	MOSFET (Metal Oxide)	800V	4A (Tc)	10V	4V @ 250µA	20nC @ 10V	955pF @ 25V	±30V	-	38.7W (Tc)	3 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
FQI50N06TU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 50A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫22,932	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	41nC @ 10V	1540pF @ 25V	±25V	-	3.75W (Ta), 120W (Tc)	22 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
DMP3036SFG-7	Diodes Incorporated	MOSFET P-CH 30V 8.7A PWRDI3333-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	パッケージ: 8-PowerWDFN	在庫6,000	MOSFET (Metal Oxide)	30V	8.7A (Ta)	5V, 10V	2.5V @ 250µA	16.5nC @ 10V	1931pF @ 15V	±25V	-	950mW (Ta)	20 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
APT53N60BC6	Microsemi Corporation	MOSFET N-CH 600V 53A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	パッケージ: TO-247-3	在庫23,100	MOSFET (Metal Oxide)	600V	53A (Tc)	10V	3.5V @ 1.72mA	154nC @ 10V	4020pF @ 25V	±20V	-	417W (Tc)	70 mOhm @ 25.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
DMN4036LK3-13	Diodes Incorporated	MOSFET N-CH 40V 8.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.12W (Ta) Rds On (Max) @ Id, Vgs: 36 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫264,408	MOSFET (Metal Oxide)	40V	8.5A (Ta)	4.5V, 10V	3V @ 250µA	9.2nC @ 10V	453pF @ 20V	±20V	-	2.12W (Ta)	36 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFH8202TRPBF	Infineon Technologies	MOSFET N-CH 25V 100A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	パッケージ: 8-PowerTDFN	在庫28,956	MOSFET (Metal Oxide)	25V	47A (Ta), 100A (Tc)	4.5V, 10V	2.35V @ 150µA	110nC @ 10V	7174pF @ 13V	±20V	-	3.6W (Ta), 160W (Tc)	1.05 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
BSZ0901NS	Infineon Technologies	MOSFET N-CH 30V S308 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	パッケージ: 8-PowerTDFN	在庫6,804	MOSFET (Metal Oxide)	30V	22A (Ta), 40A (Tc)	4.5V, 10V	2.2V @ 250µA	45nC @ 10V	2850pF @ 15V	±20V	-	2.1W (Ta), 50W (Tc)	2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
DMN3404L-7	Diodes Incorporated	MOSFET N-CH 30V 5.8A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 720mW (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,314,076	MOSFET (Metal Oxide)	30V	5.8A (Ta)	3V, 10V	2V @ 250µA	9.2nC @ 10V	386pF @ 15V	±20V	-	720mW (Ta)	28 mOhm @ 5.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSC016N04LSGATMA1	Infineon Technologies	MOSFET N-CH 40V 31A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	40 V	31A (Ta), 100A (Tc)	4.5V, 10V	2V @ 85µA	150 nC @ 10 V	12000 pF @ 20 V	±20V	-	2.5W (Ta), 139W (Tc)	1.6mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
2N7002KWHE3-TP	Micro Commercial Co	N-CHANNEL MOSFET SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	パッケージ: -	在庫8,400	MOSFET (Metal Oxide)	60 V	340mA	4.5V, 10V	2V @ 1mA	-	40 pF @ 10 V	±20V	-	200mW	2.5Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
FQD3N60CTM-WS	onsemi	MOSFET N-CH 600V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	600 V	2.4A (Tc)	10V	4V @ 250µA	14 nC @ 10 V	565 pF @ 25 V	±30V	-	50W (Tc)	3.4Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
BUK9Y6R5-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 70A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64W (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	パッケージ: -	在庫5,973	MOSFET (Metal Oxide)	40 V	70A (Ta)	4.5V, 10V	2.15V @ 1mA	29 nC @ 10 V	2036 pF @ 25 V	±20V	-	64W (Ta)	6.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
GSF3416	Good-Ark Semiconductor	MOSFET, N-CHANNEL, 20V, 6.5A, SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: -	在庫17,925	MOSFET (Metal Oxide)	20 V	6.5A (Ta)	1.8V, 4.5V	1V @ 250µA	8 nC @ 4.5 V	660 pF @ 10 V	±12V	-	1.4W (Ta)	27mOhm @ 6.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NTMFS6H818NLT1G	onsemi	MOSFET N-CH 80V 22A/135A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	パッケージ: -	在庫8,550	MOSFET (Metal Oxide)	80 V	22A (Ta), 135A (Tc)	4.5V, 10V	2V @ 190µA	64 nC @ 10 V	3844 pF @ 40 V	±20V	-	3.8W (Ta), 140W (Tc)	3.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
RJK03D3DPA-00-J5A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5HP01M-TL-E-FS	Fairchild Semiconductor	MOSFET P-CH 50V 0.07A MCP3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NDS9400	Fairchild Semiconductor	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 2.5A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 2W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	-	2.5A	-	-	-	-	-	-	2W	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SM2311PSAC-TRG-ML	MOSLEADER	P -30V -3.8A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CES2307A-ML	MOSLEADER	Single P -30V -3.2A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISC037N13NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC95R1K2P7X7SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-