ページ 1121 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - シングル

レコード 42,029
ページ  1,121/1,502
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在庫
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF7459TRPBF
Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫60,000
MOSFET (Metal Oxide)
20V
12A (Ta)
2.8V, 10V
2V @ 250µA
35nC @ 4.5V
2480pF @ 10V
±12V
-
2.5W (Ta)
9 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot NTHD5904NT1G
ON Semiconductor

MOSFET N-CH 20V 2.5A CHIPFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 640mW (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
パッケージ: 8-SMD, Flat Lead
在庫350,052
MOSFET (Metal Oxide)
20V
2.5A (Ta)
2.5V, 4.5V
1.2V @ 250µA
6nC @ 4.5V
465pF @ 16V
±8V
-
640mW (Ta)
65 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
hot FDMS8674
Fairchild/ON Semiconductor

MOSFET N-CH 30V 17A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫142,692
MOSFET (Metal Oxide)
30V
17A (Ta), 21A (Tc)
4.5V, 10V
3V @ 250µA
37nC @ 10V
2320pF @ 15V
±20V
-
2.5W (Ta), 78W (Tc)
5 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
2SK2847(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)IS
  • Package / Case: TO-3P-3, SC-65-3
パッケージ: TO-3P-3, SC-65-3
在庫5,424
MOSFET (Metal Oxide)
900V
8A (Ta)
10V
4V @ 1mA
58nC @ 10V
2040pF @ 25V
±30V
-
85W (Tc)
1.4 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-3P(N)IS
TO-3P-3, SC-65-3
FQPF1N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 450mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫3,408
MOSFET (Metal Oxide)
600V
900mA (Tc)
10V
5V @ 250µA
6nC @ 10V
150pF @ 25V
±30V
-
21W (Tc)
11.5 Ohm @ 450mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
ZVN3306ASTOA
Diodes Incorporated

MOSFET N-CH 60V 0.27A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: E-Line (TO-92 compatible)
  • Package / Case: E-Line-3
パッケージ: E-Line-3
在庫2,928
MOSFET (Metal Oxide)
60V
270mA (Ta)
10V
2.4V @ 1mA
-
35pF @ 18V
±20V
-
625mW (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
E-Line (TO-92 compatible)
E-Line-3
hot FDB24AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 40A TO-263AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫8,628
MOSFET (Metal Oxide)
60V
7.8A (Ta), 40A (Tc)
5V, 10V
3V @ 250µA
21nC @ 5V
1850pF @ 25V
±20V
-
75W (Tc)
19 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDC697P_F077
Fairchild/ON Semiconductor

MOSFET P-CH 20V 8A SSOT-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3524pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6 FLMP
  • Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
パッケージ: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
在庫7,664
MOSFET (Metal Oxide)
20V
8A (Ta)
1.8V, 4.5V
1.5V @ 250µA
55nC @ 4.5V
3524pF @ 10V
±8V
-
2W (Ta)
20 mOhm @ 8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6 FLMP
6-SSOT Flat-lead, SuperSOT?-6 FLMP
hot AOTF10N50FD
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 10A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫10,488
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
4.2V @ 250µA
35nC @ 10V
1240pF @ 25V
±30V
-
50W (Tc)
750 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
STWA40N60M2
STMicroelectronics

MOSFET N-CH 600V 34A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫3,504
MOSFET (Metal Oxide)
600V
34A
10V
-
-
-
-
-
-
-
-
Through Hole
TO-247 Long Leads
TO-247-3
PMZB350UPE,315
Nexperia USA Inc.

MOSFET P-CH 20V 1A 3DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 127pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-DFN1006B (0.6x1)
  • Package / Case: 3-XFDFN
パッケージ: 3-XFDFN
在庫2,992
MOSFET (Metal Oxide)
20V
1A (Ta)
1.8V, 4.5V
950mV @ 250µA
1.9nC @ 4.5V
127pF @ 10V
±8V
-
360mW (Ta), 3.125W (Tc)
450 mOhm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
3-DFN1006B (0.6x1)
3-XFDFN
hot FDPF5N60NZ
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫400,680
MOSFET (Metal Oxide)
600V
4.5A (Tc)
10V
5V @ 250µA
13nC @ 10V
600pF @ 25V
±25V
-
33W (Tc)
2 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQA6N90C_F109
Fairchild/ON Semiconductor

MOSFET N-CH 900V 6A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 198W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
パッケージ: TO-3P-3, SC-65-3
在庫9,528
MOSFET (Metal Oxide)
900V
6A (Tc)
10V
5V @ 250µA
40nC @ 10V
1770pF @ 25V
±30V
-
198W (Tc)
2.3 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
IRF7749L1TRPBF
Infineon Technologies

MOSFET N-CH 60V 33A DIRECTFETL8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET L8
  • Package / Case: DirectFET? Isometric L8
パッケージ: DirectFET? Isometric L8
在庫3,488
MOSFET (Metal Oxide)
60V
33A (Ta), 200A (Tc)
10V
4V @ 250µA
300nC @ 10V
12320pF @ 25V
±20V
-
3.3W (Ta), 125W (Tc)
1.5 mOhm @ 120A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DIRECTFET L8
DirectFET? Isometric L8
FDI045N10A_F102
Fairchild/ON Semiconductor

MOSFET N-CH 100V 120A I2PAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫19,386
MOSFET (Metal Oxide)
100V
120A (Tc)
10V
4V @ 250µA
74nC @ 10V
5270pF @ 50V
±20V
-
263W (Tc)
4.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IXTP80N10T
IXYS

MOSFET N-CH 100V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫79,236
MOSFET (Metal Oxide)
100V
80A (Tc)
10V
5V @ 100µA
60nC @ 10V
3040pF @ 25V
±20V
-
230W (Tc)
14 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
S3134K
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 0.75A, 20V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-723
  • Package / Case: SOT-723
パッケージ: -
在庫46,401
MOSFET (Metal Oxide)
20 V
750mA (Ta)
1.8V, 4.5V
1.1V @ 250µA
-
120 pF @ 16 V
±12V
-
150mW (Ta)
380mOhm @ 650mA, 4.5V
150°C (TJ)
Surface Mount
SOT-723
SOT-723
AP2319GN-HF-ML
MOSLEADER

Single P -30V -3.1A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
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AONS32306
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
パッケージ: -
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MOSFET (Metal Oxide)
30 V
36A (Tc)
4.5V, 10V
2.1V @ 250µA
60 nC @ 10 V
4080 pF @ 15 V
±20V
-
6.2W (Ta), 50W (Tc)
3.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
TK5A80E-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
在庫150
MOSFET (Metal Oxide)
800 V
5A (Ta)
10V
4V @ 500µA
20 nC @ 10 V
950 pF @ 25 V
±30V
-
40W (Tc)
2.4Ohm @ 2.5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
IMBG120R140M1HXTMA1
Infineon Technologies

SICFET N-CH 1.2KV 18A TO263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
  • Vgs (Max): +18V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
パッケージ: -
在庫4,308
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
5.7V @ 2.5mA
13.4 nC @ 18 V
491 pF @ 800 V
+18V, -15V
-
107W (Tc)
189mOhm @ 6A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IRFH5250DTR2PBF
Infineon Technologies

MOSFET N-CH 25V 40A 8VQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.35V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerVDFN
パッケージ: -
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MOSFET (Metal Oxide)
25 V
40A (Ta), 100A (Tc)
-
2.35V @ 150µA
83 nC @ 10 V
6115 pF @ 13 V
-
-
-
1.4mOhm @ 50A, 10V
-
Surface Mount
8-PQFN (5x6)
8-PowerVDFN
DMTH15H017SPS-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2344 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
パッケージ: -
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MOSFET (Metal Oxide)
150 V
11A (Ta), 61A (Tc)
8V, 10V
4V @ 250µA
34 nC @ 10 V
2344 pF @ 75 V
±20V
-
1.5W (Ta), 107W (Tc)
19mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
RFD20N03
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
パッケージ: -
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MOSFET (Metal Oxide)
30 V
20A (Tc)
10V
4V @ 250µA
75 nC @ 20 V
1150 pF @ 25 V
±20V
-
90W (Tc)
25mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
NVHL020N090SC1
onsemi

SICFET N-CH 900V 118A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4.3V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
  • Vgs (Max): +19V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 503W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
パッケージ: -
在庫846
SiCFET (Silicon Carbide)
900 V
118A (Tc)
15V
4.3V @ 20mA
196 nC @ 15 V
4415 pF @ 450 V
+19V, -10V
-
503W (Tc)
28mOhm @ 60A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NTD60N02R-001
onsemi

MOSFET N-CH 24V 62A IPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
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G700P06T
Goford Semiconductor

MOSFET P-CH 60V 25A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
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MOSFET (Metal Oxide)
-
25A (Tc)
4.5V, 10V
2.5V @ 250µA
-
-
±20V
-
100W (Tc)
70mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
NVMFS5C466NLWFT1G
onsemi

MOSFET N-CH 40V 16A/52A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
  • Package / Case: 8-PowerTDFN, 5 Leads
パッケージ: -
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MOSFET (Metal Oxide)
40 V
16A (Ta), 52A (Tc)
4.5V, 10V
2.2V @ 30µA
16 nC @ 10 V
860 pF @ 25 V
±20V
-
3.5W (Ta), 37W (Tc)
7.3mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads