ページ 1221 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - シングル

レコード 42,029
ページ  1,221/1,502
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF8734PBF
Infineon Technologies

MOSFET N-CH 30V 21A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫7,888
MOSFET (Metal Oxide)
30V
21A (Ta)
4.5V, 10V
2.35V @ 50µA
30nC @ 4.5V
3175pF @ 15V
±20V
-
2.5W (Ta)
3.5 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7704GTRPBF
Infineon Technologies

MOSFET P-CH 40V 4.6A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫7,936
MOSFET (Metal Oxide)
40V
4.6A (Ta)
4.5V, 10V
3V @ 250µA
38nC @ 4.5V
3150pF @ 25V
±20V
-
1.5W (Ta)
46 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
SCH1439-TL-H
ON Semiconductor

MOSFET N-CH 30V 3.5A SCH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
パッケージ: SOT-563, SOT-666
在庫7,552
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4V, 10V
-
5.6nC @ 10V
280pF @ 10V
±20V
-
1W (Ta)
72 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
FQAF22P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 16.6A TO-3PF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 8.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: SC-94
パッケージ: SC-94
在庫5,824
MOSFET (Metal Oxide)
100V
16.6A (Tc)
10V
4V @ 250µA
50nC @ 10V
1500pF @ 25V
±30V
-
70W (Tc)
125 mOhm @ 8.3A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PF
SC-94
hot FDS7066N7
Fairchild/ON Semiconductor

MOSFET N-CH 30V 23A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4973pF @ 15V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫28,248
MOSFET (Metal Oxide)
30V
23A (Ta)
4.5V, 10V
3V @ 250µA
69nC @ 5V
4973pF @ 15V
±16V
-
3W (Ta)
4.5 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
APTM10SKM02G
Microsemi Corporation

MOSFET N-CH 100V 495A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
パッケージ: SP6
在庫5,312
MOSFET (Metal Oxide)
100V
495A
10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
±30V
-
1250W (Tc)
2.5 mOhm @ 200A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
IXTT440N055T2
IXYS

MOSFET N-CH 55V 440A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1000W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫4,160
MOSFET (Metal Oxide)
55V
440A (Tc)
10V
4V @ 250µA
405nC @ 10V
25000pF @ 25V
±20V
-
1000W (Tc)
1.8 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
SI7804DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 6.5A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
パッケージ: PowerPAK? 1212-8
在庫5,056
MOSFET (Metal Oxide)
30V
6.5A (Ta)
4.5V, 10V
1.8V @ 250µA
13nC @ 5V
-
±20V
-
1.5W (Ta)
18.5 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
EKI06075
Sanken

MOSFET N-CH 60V 78A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 53.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 39A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫5,408
MOSFET (Metal Oxide)
60V
78A (Tc)
4.5V, 10V
2.5V @ 1mA
53.6nC @ 10V
3810pF @ 25V
±20V
-
116W (Tc)
6.3 mOhm @ 39A, 10V
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TSM100N06CZ C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4382pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫2,688
MOSFET (Metal Oxide)
60V
100A (Tc)
10V
4V @ 250µA
92nC @ 10V
4382pF @ 30V
±20V
-
167W (Tc)
6.7 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GA100JT17-227
GeneSiC Semiconductor

TRANS SJT 1700V 160A SOT227

  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 160A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 535W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
パッケージ: SOT-227-4, miniBLOC
在庫2,064
SiC (Silicon Carbide Junction Transistor)
1700V
160A
-
-
-
14400pF @ 800V
-
-
535W (Tc)
10 mOhm @ 100A
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
IXFP16N50P3
IXYS

MOSFET N-CH 500V 16A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫7,472
MOSFET (Metal Oxide)
500V
16A (Tc)
10V
5V @ 2.5mA
29nC @ 10V
1515pF @ 25V
±30V
-
330W (Tc)
360 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDB0190N807L
Fairchild/ON Semiconductor

MOSFET N-CH 80V 270A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 249nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19110pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
在庫7,152
MOSFET (Metal Oxide)
80V
270A (Tc)
8V, 10V
4V @ 250µA
249nC @ 10V
19110pF @ 40V
±20V
-
3.8W (Ta), 250W (Tc)
1.7 mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
hot FQB55N10TM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 55A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫187,248
MOSFET (Metal Oxide)
100V
55A (Tc)
10V
4V @ 250µA
98nC @ 10V
2730pF @ 25V
±25V
-
3.75W (Ta), 155W (Tc)
26 mOhm @ 27.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDS86540
Fairchild/ON Semiconductor

MOSFET N CH 60V 18A 8-SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6410pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫6,336
MOSFET (Metal Oxide)
60V
18A (Ta)
8V, 10V
4V @ 250µA
90nC @ 10V
6410pF @ 30V
±20V
-
2.5W (Ta), 5W (Tc)
4.5 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
BSC13DN30NSFDATMA1
Infineon Technologies

MOSFET N-CH 300V 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 150V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫48,486
MOSFET (Metal Oxide)
300V
16A (Tc)
10V
4V @ 90µA
30nC @ 10V
2450pF @ 150V
±20V
-
150W (Tc)
130 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
DMTH3004LK3-13
Diodes Incorporated

MOSFET N-CH 30V 21A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫3,488
MOSFET (Metal Oxide)
30V
21A (Ta), 75A (Tc)
4.5V, 10V
3V @ 250µA
44nC @ 10V
2370pF @ 15V
+20V, -16V
-
1.9W (Ta)
4 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI3433CDV-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 6A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: SOT-23-6 Thin, TSOT-23-6
在庫529,500
MOSFET (Metal Oxide)
20V
6A (Tc)
1.8V, 4.5V
1V @ 250µA
45nC @ 8V
1300pF @ 10V
±8V
-
1.6W (Ta), 3.3W (Tc)
38 mOhm @ 5.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
DMN53D0LQ-7
Diodes Incorporated

MOSFET N-CH 50V 0.5A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫27,222
MOSFET (Metal Oxide)
50V
500mA (Ta)
2.5V, 10V
1.5V @ 250µA
0.6nC @ 4.5V
46pF @ 25V
±20V
-
370mW (Ta)
1.6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot 2V7002LT1G
ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫759,444
MOSFET (Metal Oxide)
60V
115mA (Tc)
5V, 10V
2.5V @ 250µA
-
50pF @ 25V
±20V
-
225mW (Ta)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
ICE19N60L
IceMOS Technology

Superjunction MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 236W (Tc)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN (8x8)
  • Package / Case: 4-PowerTSFN
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
19A (Tc)
10V
3.9V @ 250µA
59 nC @ 10 V
2064 pF @ 25 V
±20V
-
236W (Tc)
220mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
4-DFN (8x8)
4-PowerTSFN
RJK03M9DNS-00-J5
Renesas Electronics Corporation

MOSFET N-CH 30V 14A 8HWSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 10W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
14A (Ta)
-
-
6 nC @ 4.5 V
980 pF @ 10 V
-
-
10W (Tc)
11.1mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerWDFN
FCP16N60N-F102
onsemi

MOSFET N-CH 600V 16A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 134.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
16A (Tc)
10V
4V @ 250µA
52.3 nC @ 10 V
2170 pF @ 100 V
±30V
-
134.4W (Tc)
199mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
MCH6627-TL-E
Sanyo

P-CHANNEL SILICON MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
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-
IAUC120N04S6L005ATMA1
Infineon Technologies

IAUC120N04S6L005ATMA1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-53
  • Package / Case: 8-PowerTDFN
パッケージ: -
在庫12,570
MOSFET (Metal Oxide)
40 V
120A (Tj)
4.5V, 10V
2V @ 130µA
177 nC @ 10 V
11203 pF @ 25 V
±16V
-
187W (Tc)
0.55mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-53
8-PowerTDFN
DMP2075UVT-13
Diodes Incorporated

MOSFET P-CH 20V 3.8A TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
20 V
3.8A (Ta)
2.5V, 4.5V
1V @ 250µA
8.8 nC @ 4.5 V
642 pF @ 10 V
±8V
-
1.2W (Ta)
75mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
IPD60R210CFD7ATMA1
Infineon Technologies

MOSFET N CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 64W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫9,228
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
4.5V @ 240µA
23 nC @ 10 V
1015 pF @ 400 V
±20V
-
64W (Tc)
210mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK03B7DPA-WS-J53
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
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